JP7412872B2 - 両面露光装置 - Google Patents

両面露光装置 Download PDF

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Publication number
JP7412872B2
JP7412872B2 JP2017210651A JP2017210651A JP7412872B2 JP 7412872 B2 JP7412872 B2 JP 7412872B2 JP 2017210651 A JP2017210651 A JP 2017210651A JP 2017210651 A JP2017210651 A JP 2017210651A JP 7412872 B2 JP7412872 B2 JP 7412872B2
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JP
Japan
Prior art keywords
alignment
mask
mark
camera
chipping
Prior art date
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Active
Application number
JP2017210651A
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English (en)
Japanese (ja)
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JP2019082611A (ja
JP2019082611A5 (ko
Inventor
淳 名古屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adtec Engineering Co Ltd
Original Assignee
Adtec Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adtec Engineering Co Ltd filed Critical Adtec Engineering Co Ltd
Priority to JP2017210651A priority Critical patent/JP7412872B2/ja
Priority to TW111139385A priority patent/TWI844141B/zh
Priority to TW107138123A priority patent/TWI782124B/zh
Priority to KR1020180130945A priority patent/KR102603530B1/ko
Priority to CN201811284435.8A priority patent/CN109725501B/zh
Publication of JP2019082611A publication Critical patent/JP2019082611A/ja
Publication of JP2019082611A5 publication Critical patent/JP2019082611A5/ja
Priority to JP2022193844A priority patent/JP7430768B2/ja
Application granted granted Critical
Publication of JP7412872B2 publication Critical patent/JP7412872B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032—Simultaneous exposure of the front side and the backside
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Separation By Low-Temperature Treatments (AREA)
JP2017210651A 2017-10-31 2017-10-31 両面露光装置 Active JP7412872B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2017210651A JP7412872B2 (ja) 2017-10-31 2017-10-31 両面露光装置
TW111139385A TWI844141B (zh) 2017-10-31 2018-10-29 兩面曝光裝置
TW107138123A TWI782124B (zh) 2017-10-31 2018-10-29 兩面曝光裝置
KR1020180130945A KR102603530B1 (ko) 2017-10-31 2018-10-30 양면 노광 장치
CN201811284435.8A CN109725501B (zh) 2017-10-31 2018-10-31 两面曝光装置
JP2022193844A JP7430768B2 (ja) 2017-10-31 2022-12-02 両面露光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017210651A JP7412872B2 (ja) 2017-10-31 2017-10-31 両面露光装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022193844A Division JP7430768B2 (ja) 2017-10-31 2022-12-02 両面露光装置

Publications (3)

Publication Number Publication Date
JP2019082611A JP2019082611A (ja) 2019-05-30
JP2019082611A5 JP2019082611A5 (ko) 2020-09-17
JP7412872B2 true JP7412872B2 (ja) 2024-01-15

Family

ID=66295477

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2017210651A Active JP7412872B2 (ja) 2017-10-31 2017-10-31 両面露光装置
JP2022193844A Active JP7430768B2 (ja) 2017-10-31 2022-12-02 両面露光装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022193844A Active JP7430768B2 (ja) 2017-10-31 2022-12-02 両面露光装置

Country Status (4)

Country Link
JP (2) JP7412872B2 (ko)
KR (1) KR102603530B1 (ko)
CN (1) CN109725501B (ko)
TW (2) TWI844141B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6994806B2 (ja) 2017-10-31 2022-01-14 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法
JP7458950B2 (ja) * 2020-09-23 2024-04-01 株式会社Ｓｃｒｅｅｎホールディングス 描画システム

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000305274A (ja) 1999-04-20 2000-11-02 Ushio Inc 露光装置
JP2000347425A (ja) 1999-06-08 2000-12-15 Ushio Inc マスクを移動させて位置合わせを行う露光装置
JP2004279166A (ja) 2003-03-14 2004-10-07 Canon Inc 位置検出装置
WO2005116577A1 (ja) 2004-05-28 2005-12-08 Nikon Corporation 結像光学系の調整方法、結像装置、位置ずれ検出装置、マ－ク識別装置及びエッジ位置検出装置
JP2007121425A (ja) 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP2011227363A (ja) 2010-04-22 2011-11-10 Nitto Denko Corp アライメントマークの検出方法および配線回路基板の製造方法
JP2012243987A (ja) 2011-05-20 2012-12-10 Renesas Electronics Corp 半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3034273B2 (ja) * 1989-10-07 2000-04-17 株式会社東芝 露光方法及び露光装置
JP2600027B2 (ja) * 1991-05-16 1997-04-16 日立テクノエンジニアリング株式会社 画像位置合わせ方法およびその装置
JPH08181062A (ja) * 1994-12-22 1996-07-12 Nikon Corp 位置決め装置及び位置決め方法
JPH1022201A (ja) * 1996-07-04 1998-01-23 Nikon Corp アライメントマーク検出装置
JPH1154407A (ja) * 1997-08-05 1999-02-26 Nikon Corp 位置合わせ方法
JP3316676B2 (ja) * 1998-09-18 2002-08-19 株式会社オーク製作所 ワークとマスクの整合機構および整合方法
JP2000099159A (ja) * 1998-09-18 2000-04-07 Orc Mfg Co Ltd ワークとマスクの整合機構および整合方法
JP2000155430A (ja) 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
JP4218418B2 (ja) * 2003-05-23 2009-02-04 ウシオ電機株式会社 帯状ワークの両面投影露光装置
JP2006084783A (ja) * 2004-09-16 2006-03-30 Nsk Ltd 両面露光装置のマスクアライメント方法及びマスクアライメント装置
JP2006278648A (ja) 2005-03-29 2006-10-12 Nsk Ltd 両面露光方法
JP2012234021A (ja) * 2011-04-28 2012-11-29 Hitachi High-Technologies Corp プロキシミティ露光装置、プロキシミティ露光装置のアライメント方法、及び表示用パネル基板の製造方法
JP2016180868A (ja) * 2015-03-24 2016-10-13 富士フイルム株式会社 露光用治具および露光方法
CN108604063A (zh) * 2015-11-30 2018-09-28 株式会社尼康 曝光装置、曝光系统、基板处理方法、以及元件制造装置
JP5997409B1 (ja) * 2016-05-26 2016-09-28 株式会社 ベアック 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000305274A (ja) 1999-04-20 2000-11-02 Ushio Inc 露光装置
JP2000347425A (ja) 1999-06-08 2000-12-15 Ushio Inc マスクを移動させて位置合わせを行う露光装置
JP2004279166A (ja) 2003-03-14 2004-10-07 Canon Inc 位置検出装置
WO2005116577A1 (ja) 2004-05-28 2005-12-08 Nikon Corporation 結像光学系の調整方法、結像装置、位置ずれ検出装置、マ－ク識別装置及びエッジ位置検出装置
JP2007121425A (ja) 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP2011227363A (ja) 2010-04-22 2011-11-10 Nitto Denko Corp アライメントマークの検出方法および配線回路基板の製造方法
JP2012243987A (ja) 2011-05-20 2012-12-10 Renesas Electronics Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
TWI844141B (zh) 2024-06-01
KR20190049562A (ko) 2019-05-09
JP2023014353A (ja) 2023-01-26
JP2019082611A (ja) 2019-05-30
CN109725501A (zh) 2019-05-07
TWI782124B (zh) 2022-11-01
TW201923485A (zh) 2019-06-16
CN109725501B (zh) 2023-06-30
JP7430768B2 (ja) 2024-02-13
KR102603530B1 (ko) 2023-11-17
TW202307590A (zh) 2023-02-16

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