JP7412872B2 - 両面露光装置 - Google Patents
両面露光装置 Download PDFInfo
- Publication number
- JP7412872B2 JP7412872B2 JP2017210651A JP2017210651A JP7412872B2 JP 7412872 B2 JP7412872 B2 JP 7412872B2 JP 2017210651 A JP2017210651 A JP 2017210651A JP 2017210651 A JP2017210651 A JP 2017210651A JP 7412872 B2 JP7412872 B2 JP 7412872B2
- Authority
- JP
- Japan
- Prior art keywords
- alignment
- mask
- mark
- camera
- chipping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 147
- 230000008030 elimination Effects 0.000 claims description 25
- 238000003379 elimination reaction Methods 0.000 claims description 10
- 230000007812 deficiency Effects 0.000 claims 1
- 230000032258 transport Effects 0.000 description 40
- 238000000034 method Methods 0.000 description 18
- 230000002159 abnormal effect Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 8
- 239000000047 product Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2032—Simultaneous exposure of the front side and the backside
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Separation By Low-Temperature Treatments (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017210651A JP7412872B2 (ja) | 2017-10-31 | 2017-10-31 | 両面露光装置 |
TW111139385A TWI844141B (zh) | 2017-10-31 | 2018-10-29 | 兩面曝光裝置 |
TW107138123A TWI782124B (zh) | 2017-10-31 | 2018-10-29 | 兩面曝光裝置 |
KR1020180130945A KR102603530B1 (ko) | 2017-10-31 | 2018-10-30 | 양면 노광 장치 |
CN201811284435.8A CN109725501B (zh) | 2017-10-31 | 2018-10-31 | 两面曝光装置 |
JP2022193844A JP7430768B2 (ja) | 2017-10-31 | 2022-12-02 | 両面露光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017210651A JP7412872B2 (ja) | 2017-10-31 | 2017-10-31 | 両面露光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022193844A Division JP7430768B2 (ja) | 2017-10-31 | 2022-12-02 | 両面露光装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019082611A JP2019082611A (ja) | 2019-05-30 |
JP2019082611A5 JP2019082611A5 (ko) | 2020-09-17 |
JP7412872B2 true JP7412872B2 (ja) | 2024-01-15 |
Family
ID=66295477
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017210651A Active JP7412872B2 (ja) | 2017-10-31 | 2017-10-31 | 両面露光装置 |
JP2022193844A Active JP7430768B2 (ja) | 2017-10-31 | 2022-12-02 | 両面露光装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022193844A Active JP7430768B2 (ja) | 2017-10-31 | 2022-12-02 | 両面露光装置 |
Country Status (4)
Country | Link |
---|---|
JP (2) | JP7412872B2 (ko) |
KR (1) | KR102603530B1 (ko) |
CN (1) | CN109725501B (ko) |
TW (2) | TWI844141B (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6994806B2 (ja) | 2017-10-31 | 2022-01-14 | 株式会社アドテックエンジニアリング | 両面露光装置及び両面露光方法 |
JP7458950B2 (ja) * | 2020-09-23 | 2024-04-01 | 株式会社Screenホールディングス | 描画システム |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000305274A (ja) | 1999-04-20 | 2000-11-02 | Ushio Inc | 露光装置 |
JP2000347425A (ja) | 1999-06-08 | 2000-12-15 | Ushio Inc | マスクを移動させて位置合わせを行う露光装置 |
JP2004279166A (ja) | 2003-03-14 | 2004-10-07 | Canon Inc | 位置検出装置 |
WO2005116577A1 (ja) | 2004-05-28 | 2005-12-08 | Nikon Corporation | 結像光学系の調整方法、結像装置、位置ずれ検出装置、マ-ク識別装置及びエッジ位置検出装置 |
JP2007121425A (ja) | 2005-10-25 | 2007-05-17 | San Ei Giken Inc | 露光方法及び露光装置 |
JP2011227363A (ja) | 2010-04-22 | 2011-11-10 | Nitto Denko Corp | アライメントマークの検出方法および配線回路基板の製造方法 |
JP2012243987A (ja) | 2011-05-20 | 2012-12-10 | Renesas Electronics Corp | 半導体装置の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3034273B2 (ja) * | 1989-10-07 | 2000-04-17 | 株式会社東芝 | 露光方法及び露光装置 |
JP2600027B2 (ja) * | 1991-05-16 | 1997-04-16 | 日立テクノエンジニアリング株式会社 | 画像位置合わせ方法およびその装置 |
JPH08181062A (ja) * | 1994-12-22 | 1996-07-12 | Nikon Corp | 位置決め装置及び位置決め方法 |
JPH1022201A (ja) * | 1996-07-04 | 1998-01-23 | Nikon Corp | アライメントマーク検出装置 |
JPH1154407A (ja) * | 1997-08-05 | 1999-02-26 | Nikon Corp | 位置合わせ方法 |
JP3316676B2 (ja) * | 1998-09-18 | 2002-08-19 | 株式会社オーク製作所 | ワークとマスクの整合機構および整合方法 |
JP2000099159A (ja) * | 1998-09-18 | 2000-04-07 | Orc Mfg Co Ltd | ワークとマスクの整合機構および整合方法 |
JP2000155430A (ja) | 1998-11-24 | 2000-06-06 | Nsk Ltd | 両面露光装置における自動アライメント方法 |
JP4218418B2 (ja) * | 2003-05-23 | 2009-02-04 | ウシオ電機株式会社 | 帯状ワークの両面投影露光装置 |
JP2006084783A (ja) * | 2004-09-16 | 2006-03-30 | Nsk Ltd | 両面露光装置のマスクアライメント方法及びマスクアライメント装置 |
JP2006278648A (ja) | 2005-03-29 | 2006-10-12 | Nsk Ltd | 両面露光方法 |
JP2012234021A (ja) * | 2011-04-28 | 2012-11-29 | Hitachi High-Technologies Corp | プロキシミティ露光装置、プロキシミティ露光装置のアライメント方法、及び表示用パネル基板の製造方法 |
JP2016180868A (ja) * | 2015-03-24 | 2016-10-13 | 富士フイルム株式会社 | 露光用治具および露光方法 |
CN108604063A (zh) * | 2015-11-30 | 2018-09-28 | 株式会社尼康 | 曝光装置、曝光系统、基板处理方法、以及元件制造装置 |
JP5997409B1 (ja) * | 2016-05-26 | 2016-09-28 | 株式会社 ベアック | 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法 |
-
2017
- 2017-10-31 JP JP2017210651A patent/JP7412872B2/ja active Active
-
2018
- 2018-10-29 TW TW111139385A patent/TWI844141B/zh active
- 2018-10-29 TW TW107138123A patent/TWI782124B/zh active
- 2018-10-30 KR KR1020180130945A patent/KR102603530B1/ko active IP Right Grant
- 2018-10-31 CN CN201811284435.8A patent/CN109725501B/zh active Active
-
2022
- 2022-12-02 JP JP2022193844A patent/JP7430768B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000305274A (ja) | 1999-04-20 | 2000-11-02 | Ushio Inc | 露光装置 |
JP2000347425A (ja) | 1999-06-08 | 2000-12-15 | Ushio Inc | マスクを移動させて位置合わせを行う露光装置 |
JP2004279166A (ja) | 2003-03-14 | 2004-10-07 | Canon Inc | 位置検出装置 |
WO2005116577A1 (ja) | 2004-05-28 | 2005-12-08 | Nikon Corporation | 結像光学系の調整方法、結像装置、位置ずれ検出装置、マ-ク識別装置及びエッジ位置検出装置 |
JP2007121425A (ja) | 2005-10-25 | 2007-05-17 | San Ei Giken Inc | 露光方法及び露光装置 |
JP2011227363A (ja) | 2010-04-22 | 2011-11-10 | Nitto Denko Corp | アライメントマークの検出方法および配線回路基板の製造方法 |
JP2012243987A (ja) | 2011-05-20 | 2012-12-10 | Renesas Electronics Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI844141B (zh) | 2024-06-01 |
KR20190049562A (ko) | 2019-05-09 |
JP2023014353A (ja) | 2023-01-26 |
JP2019082611A (ja) | 2019-05-30 |
CN109725501A (zh) | 2019-05-07 |
TWI782124B (zh) | 2022-11-01 |
TW201923485A (zh) | 2019-06-16 |
CN109725501B (zh) | 2023-06-30 |
JP7430768B2 (ja) | 2024-02-13 |
KR102603530B1 (ko) | 2023-11-17 |
TW202307590A (zh) | 2023-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7389885B2 (ja) | 両面露光装置及び両面露光方法 | |
JP7430768B2 (ja) | 両面露光装置 | |
JP4777682B2 (ja) | スキャン露光装置 | |
KR20240005244A (ko) | 양면 노광 장치 및 양면 노광 방법 | |
JP2007310209A (ja) | 露光装置 | |
WO2007049640A1 (ja) | 露光方法及び露光装置 | |
JP7121184B2 (ja) | 両面露光装置及び両面露光方法 | |
JP5076233B2 (ja) | 露光用マスクの初期位置及び姿勢調整方法 | |
JP7364754B2 (ja) | 露光方法 | |
JP7234426B2 (ja) | マスク対及び両面露光装置 | |
JP6762640B1 (ja) | 露光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200731 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200803 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210519 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210525 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210721 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211116 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220107 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220517 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20220913 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20221202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231107 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231227 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7412872 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |