JP7408764B2 - Mems素子およびmemsモジュール - Google Patents
Mems素子およびmemsモジュール Download PDFInfo
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- JP7408764B2 JP7408764B2 JP2022199549A JP2022199549A JP7408764B2 JP 7408764 B2 JP7408764 B2 JP 7408764B2 JP 2022199549 A JP2022199549 A JP 2022199549A JP 2022199549 A JP2022199549 A JP 2022199549A JP 7408764 B2 JP7408764 B2 JP 7408764B2
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- 229910052751 metal Inorganic materials 0.000 claims description 131
- 239000002184 metal Substances 0.000 claims description 131
- 238000000034 method Methods 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 74
- 230000002093 peripheral effect Effects 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000007747 plating Methods 0.000 claims description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 217
- 239000000463 material Substances 0.000 description 77
- 238000004519 manufacturing process Methods 0.000 description 35
- 238000005530 etching Methods 0.000 description 25
- 230000001681 protective effect Effects 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 150000003839 salts Chemical class 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- -1 AlSiCu Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0315—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0116—Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
- B81C2201/053—Depositing a protective layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0069—Electrical connection means from the sensor to its support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/142—Multiple part housings
- G01L19/143—Two part housings
Description
1 :基板
1A :基材
1B :配線部
1C :絶縁層
1a :搭載面
1b :実装面
1c :側面
2 :電子部品
2a :搭載面
2b :実装面
2c :側面
3 :MEMS素子
3b :実装面
3c :側面
4 :ボンディングワイヤ
6 :カバー
7 :接合材
11 :電極パッド
12 :延出部
13 :連結部
14 :枝部
19 :裏面パッド
21 :電極パッド
22 :温度センサ
23 :マルチプレクサ
24 :デジタル変換回路
25 :信号処理部
26 :クロック
27 :記憶部
28 :インターフェイス
30 :基板
34 :電極パッド
34a,34b,34c,34d:電極パッド
35 :金属配線
36 :拡散配線
37,37a,37b,37c,37d:拡散抵抗
61 :開口部
62 :延出部
71 :接合材内側端縁
100 :搭載面部
101 :第1搭載面部
102 :第2搭載面部
103 :第3搭載面部
111 :絶縁層内側端縁
112 :開口
300 :基板材料
301 :第1層
302 :第2層
303 :第3層
310 :主面
311 :凹部
320,321:穴部
330 :連結空洞部
340 :空洞部
350 :保護膜
351 :貫通孔
360 :可動部
370 :固定部
380 :追加層
Claims (10)
- 主面を有する基板と、
前記基板の前記主面側に形成され、厚さ方向視において互いに重なる可動部および空洞部と、前記可動部を支持する固定部と、
前記基板の前記主面に形成された金属配線と、
前記基板の前記主面に形成され、前記金属配線を露出させるコンタクト孔を有する絶縁層と、
前記コンタクト孔から露出する前記金属配線の露出部分に電気的に接続された電極パッドとを含み、
前記可動部と前記固定部とは、互いの境界に接合部を有さない、同一且つ単一の半導体からなり、
前記主面は、前記厚さ方向視において前記可動部と重なる凹部を有し、
前記空洞部は、前記厚さ方向に起立する側面、側面と交差する方向に広がる底面、および前記側面および前記底面を繋ぐ曲面を有し、前記側面が、前記厚さ方向における前記底面に向かうほど前記空洞部の外側に広がるように傾斜しており、
前記電極パッドは、前記コンタクト孔上に形成され、前記コンタクト孔内で前記金属配線の露出部分に接続されたパッド部、および前記パッド部の外側であり、かつ前記絶縁層上において前記パッド部とは物理的に分離されて形成され、前記パッド部および前記金属配線の露出部分を取り囲む外周部を含む第1金属層と、前記パッド部および前記外周部を一括して覆うように形成された第2金属層とを含み、
前記パッド部は、前記コンタクト孔から外側に張り出し、前記絶縁層上に配置された鍔部を有しており、
前記第2金属層は、前記パッド部と前記外周部との間の第1領域に入り込み、前記パッド部の外周縁および前記外周部の内周縁を覆う第1部分と、前記外周部よりも外側の第2領域において前記絶縁層に接するように配置され、前記外周部の外周端面を含む前記外周部の外周縁を覆う第2部分とを有している、MEMS素子。 - 前記第2金属層は、前記コンタクト孔の高低差に応じた第1凹部、前記第1領域における前記絶縁層と前記第1金属層との高低差に応じた第2凹部、および前記第2領域における前記絶縁層と前記第1金属層との高低差に応じた第3凹部を有している、請求項1に記載のMEMS素子。
- 前記第1凹部は、前記パッド部の中央部に形成され、前記第2凹部は、前記第1凹部を取り囲む環状に形成され、前記第3凹部は、さらに前記第2凹部を取り囲む環状に形成されている、請求項2に記載のMEMS素子。
- 前記パッド部および前記外周部は、前記第2金属層を介して互いに電気的に接続されている、請求項1~3のいずれか一項に記載のMEMS素子。
- 前記第1金属層と前記絶縁層との間に形成されたバリア層をさらに含む、請求項1~4のいずれか一項に記載のMEMS素子。
- 前記第1金属層は、Al、アルミ合金またはCuからなる、請求項1~5のいずれか一項に記載のMEMS素子。
- 前記第2金属層は、前記第1金属層側から順に、Ni層、Pd層およびAu層を含むめっき層からなる、請求項1~6のいずれか一項に記載のMEMS素子。
- 前記半導体は、Siである、請求項1~7のいずれか一項に記載のMEMS素子。
- 前記空洞部は、密閉されている、請求項1~8のいずれか一項に記載のMEMS素子。
- 請求項1~9のいずれか一項に記載のMEMS素子と、
前記MEMS素子からの電気信号を処理する電子部品と、を備える、MEMSモジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2017106121 | 2017-05-30 | ||
JP2017106121 | 2017-05-30 | ||
JP2018085230A JP2018205304A (ja) | 2017-05-30 | 2018-04-26 | Mems素子の製造方法、mems素子およびmemsモジュール |
Related Parent Applications (1)
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JP2018085230A Division JP2018205304A (ja) | 2017-05-30 | 2018-04-26 | Mems素子の製造方法、mems素子およびmemsモジュール |
Publications (2)
Publication Number | Publication Date |
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JP2023036718A JP2023036718A (ja) | 2023-03-14 |
JP7408764B2 true JP7408764B2 (ja) | 2024-01-05 |
Family
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Family Applications (1)
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JP2022199549A Active JP7408764B2 (ja) | 2017-05-30 | 2022-12-14 | Mems素子およびmemsモジュール |
Country Status (2)
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US (1) | US10597288B2 (ja) |
JP (1) | JP7408764B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018007641A1 (en) * | 2016-07-08 | 2018-01-11 | Robert Bosch Gmbh | Hybrid galvanic connection system for a mems sensor device package |
US11368783B2 (en) * | 2019-04-12 | 2022-06-21 | Knowles Electronics, Llc | Prevention of buzz noise in smart microphones |
USD1023805S1 (en) * | 2022-05-12 | 2024-04-23 | Milestone Scientific, Inc. | Pressure transducer housing |
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US20030168711A1 (en) | 2000-07-25 | 2003-09-11 | Stmicroelectronics S.R.I. | Process for manufacturing an SOI wafer by annealing and oxidation of buried channels |
JP2004228295A (ja) | 2003-01-22 | 2004-08-12 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2006075981A (ja) | 2004-09-08 | 2006-03-23 | Robert Bosch Gmbh | トレンチされたキャビティを有するセンサエレメント |
JP2007335629A (ja) | 2006-06-15 | 2007-12-27 | Sony Corp | 電子部品及びこれを用いた半導体装置並びに電子部品の製造方法 |
JP2009124099A (ja) | 2007-10-24 | 2009-06-04 | Panasonic Corp | 半導体チップの電極構造 |
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US20140299948A1 (en) | 2011-12-29 | 2014-10-09 | Goertek Inc. | Silicon based mems microphone, a system and a package with the same |
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2018
- 2018-05-25 US US15/989,259 patent/US10597288B2/en active Active
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2022
- 2022-12-14 JP JP2022199549A patent/JP7408764B2/ja active Active
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US20030168711A1 (en) | 2000-07-25 | 2003-09-11 | Stmicroelectronics S.R.I. | Process for manufacturing an SOI wafer by annealing and oxidation of buried channels |
JP2004228295A (ja) | 2003-01-22 | 2004-08-12 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2006075981A (ja) | 2004-09-08 | 2006-03-23 | Robert Bosch Gmbh | トレンチされたキャビティを有するセンサエレメント |
JP2007335629A (ja) | 2006-06-15 | 2007-12-27 | Sony Corp | 電子部品及びこれを用いた半導体装置並びに電子部品の製造方法 |
JP2009124099A (ja) | 2007-10-24 | 2009-06-04 | Panasonic Corp | 半導体チップの電極構造 |
JP2009245957A (ja) | 2008-03-28 | 2009-10-22 | Panasonic Corp | 半導体装置及びその製造方法 |
JP2013038277A (ja) | 2011-08-09 | 2013-02-21 | Semiconductor Components Industries Llc | 半導体装置およびその製造方法 |
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JP2014120729A (ja) | 2012-12-19 | 2014-06-30 | Fuji Electric Co Ltd | 半導体基板の製造方法および半導体装置 |
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JP2023036718A (ja) | 2023-03-14 |
US10597288B2 (en) | 2020-03-24 |
US20180346322A1 (en) | 2018-12-06 |
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