JP7401430B2 - 記憶装置および電子機器 - Google Patents

記憶装置および電子機器 Download PDF

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Publication number
JP7401430B2
JP7401430B2 JP2020524946A JP2020524946A JP7401430B2 JP 7401430 B2 JP7401430 B2 JP 7401430B2 JP 2020524946 A JP2020524946 A JP 2020524946A JP 2020524946 A JP2020524946 A JP 2020524946A JP 7401430 B2 JP7401430 B2 JP 7401430B2
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transistor
conductive layer
insulating layer
region
layer
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Japanese (ja)
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JPWO2019243957A5 (https=
JPWO2019243957A1 (ja
Inventor
貴彦 石津
利彦 齋藤
秀貴 魚地
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2023206826A priority Critical patent/JP2024019354A/ja
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Priority to JP2025094165A priority patent/JP2025124855A/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2020524946A 2018-06-22 2019-06-13 記憶装置および電子機器 Active JP7401430B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023206826A JP2024019354A (ja) 2018-06-22 2023-12-07 記憶装置
JP2025094165A JP2025124855A (ja) 2018-06-22 2025-06-05 記憶装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018118869 2018-06-22
JP2018118869 2018-06-22
JP2018124319 2018-06-29
JP2018124319 2018-06-29
PCT/IB2019/054931 WO2019243957A1 (ja) 2018-06-22 2019-06-13 記憶装置および電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023206826A Division JP2024019354A (ja) 2018-06-22 2023-12-07 記憶装置

Publications (3)

Publication Number Publication Date
JPWO2019243957A1 JPWO2019243957A1 (ja) 2021-07-08
JPWO2019243957A5 JPWO2019243957A5 (https=) 2022-06-02
JP7401430B2 true JP7401430B2 (ja) 2023-12-19

Family

ID=68983796

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2020524946A Active JP7401430B2 (ja) 2018-06-22 2019-06-13 記憶装置および電子機器
JP2023206826A Withdrawn JP2024019354A (ja) 2018-06-22 2023-12-07 記憶装置
JP2025094165A Pending JP2025124855A (ja) 2018-06-22 2025-06-05 記憶装置

Family Applications After (2)

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JP2023206826A Withdrawn JP2024019354A (ja) 2018-06-22 2023-12-07 記憶装置
JP2025094165A Pending JP2025124855A (ja) 2018-06-22 2025-06-05 記憶装置

Country Status (5)

Country Link
US (2) US11443796B2 (https=)
JP (3) JP7401430B2 (https=)
KR (2) KR20250130429A (https=)
CN (2) CN121442688A (https=)
WO (1) WO2019243957A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12439581B2 (en) * 2019-12-27 2025-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN115568206A (zh) * 2021-07-02 2023-01-03 长鑫存储技术有限公司 存储单元及其制备方法、存储器及其制备方法
CN117479527A (zh) * 2022-09-21 2024-01-30 北京超弦存储器研究院 一种存储结构、电子设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006294116A (ja) 2005-04-08 2006-10-26 Renesas Technology Corp 半導体記憶装置
JP2008311641A (ja) 2007-05-17 2008-12-25 Elpida Memory Inc 半導体記憶装置及びその製造方法
JP2012256830A (ja) 2010-12-28 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
JP2015181159A (ja) 2014-03-07 2015-10-15 株式会社半導体エネルギー研究所 半導体装置
JP2016076285A (ja) 2014-10-06 2016-05-12 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP2017016730A (ja) 2010-05-20 2017-01-19 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP2018085357A (ja) 2016-11-21 2018-05-31 株式会社半導体エネルギー研究所 記憶装置、及び電子機器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017487A (ja) * 2001-06-29 2003-01-17 Rohm Co Ltd 半導体装置およびその製造方法
JP3934507B2 (ja) * 2002-08-08 2007-06-20 株式会社東芝 半導体記憶装置および半導体記憶装置の製造方法
JP5086625B2 (ja) * 2006-12-15 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
JP2015018940A (ja) * 2013-07-11 2015-01-29 ルネサスエレクトロニクス株式会社 半導体装置
WO2017111798A1 (en) * 2015-12-23 2017-06-29 Intel Corporation High retention time memory element with dual gate devices
KR102473660B1 (ko) * 2016-02-22 2022-12-02 삼성전자주식회사 메모리 소자 및 그 제조 방법
KR102330605B1 (ko) * 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006294116A (ja) 2005-04-08 2006-10-26 Renesas Technology Corp 半導体記憶装置
JP2008311641A (ja) 2007-05-17 2008-12-25 Elpida Memory Inc 半導体記憶装置及びその製造方法
JP2017016730A (ja) 2010-05-20 2017-01-19 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP2012256830A (ja) 2010-12-28 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
JP2015181159A (ja) 2014-03-07 2015-10-15 株式会社半導体エネルギー研究所 半導体装置
JP2016076285A (ja) 2014-10-06 2016-05-12 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP2018085357A (ja) 2016-11-21 2018-05-31 株式会社半導体エネルギー研究所 記憶装置、及び電子機器

Also Published As

Publication number Publication date
CN112313792B (zh) 2025-12-16
JP2024019354A (ja) 2024-02-08
US11443796B2 (en) 2022-09-13
US11922999B2 (en) 2024-03-05
WO2019243957A1 (ja) 2019-12-26
CN112313792A (zh) 2021-02-02
KR20210022041A (ko) 2021-03-02
CN121442688A (zh) 2026-01-30
KR102851545B1 (ko) 2025-08-28
US20230005528A1 (en) 2023-01-05
US20210257020A1 (en) 2021-08-19
KR20250130429A (ko) 2025-09-01
JPWO2019243957A1 (ja) 2021-07-08
JP2025124855A (ja) 2025-08-26

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