KR20250130429A - 기억 장치 및 전자 기기 - Google Patents

기억 장치 및 전자 기기

Info

Publication number
KR20250130429A
KR20250130429A KR1020257027578A KR20257027578A KR20250130429A KR 20250130429 A KR20250130429 A KR 20250130429A KR 1020257027578 A KR1020257027578 A KR 1020257027578A KR 20257027578 A KR20257027578 A KR 20257027578A KR 20250130429 A KR20250130429 A KR 20250130429A
Authority
KR
South Korea
Prior art keywords
transistor
insulating layer
conductive layer
oxide
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257027578A
Other languages
English (en)
Korean (ko)
Inventor
타카히코 이시즈
토시히코 사이토
히데키 우오치
순페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20250130429A publication Critical patent/KR20250130429A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020257027578A 2018-06-22 2019-06-13 기억 장치 및 전자 기기 Pending KR20250130429A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPJP-P-2018-118869 2018-06-22
JP2018118869 2018-06-22
JPJP-P-2018-124319 2018-06-29
JP2018124319 2018-06-29
PCT/IB2019/054931 WO2019243957A1 (ja) 2018-06-22 2019-06-13 記憶装置および電子機器
KR1020217000762A KR102851545B1 (ko) 2018-06-22 2019-06-13 기억 장치 및 전자 기기

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020217000762A Division KR102851545B1 (ko) 2018-06-22 2019-06-13 기억 장치 및 전자 기기

Publications (1)

Publication Number Publication Date
KR20250130429A true KR20250130429A (ko) 2025-09-01

Family

ID=68983796

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020257027578A Pending KR20250130429A (ko) 2018-06-22 2019-06-13 기억 장치 및 전자 기기
KR1020217000762A Active KR102851545B1 (ko) 2018-06-22 2019-06-13 기억 장치 및 전자 기기

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020217000762A Active KR102851545B1 (ko) 2018-06-22 2019-06-13 기억 장치 및 전자 기기

Country Status (5)

Country Link
US (2) US11443796B2 (https=)
JP (3) JP7401430B2 (https=)
KR (2) KR20250130429A (https=)
CN (2) CN121442688A (https=)
WO (1) WO2019243957A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12439581B2 (en) * 2019-12-27 2025-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN115568206A (zh) * 2021-07-02 2023-01-03 长鑫存储技术有限公司 存储单元及其制备方法、存储器及其制备方法
CN117479527A (zh) * 2022-09-21 2024-01-30 北京超弦存储器研究院 一种存储结构、电子设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012256400A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置

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Publication number Priority date Publication date Assignee Title
JP2003017487A (ja) * 2001-06-29 2003-01-17 Rohm Co Ltd 半導体装置およびその製造方法
JP3934507B2 (ja) * 2002-08-08 2007-06-20 株式会社東芝 半導体記憶装置および半導体記憶装置の製造方法
JP4849817B2 (ja) 2005-04-08 2012-01-11 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5086625B2 (ja) * 2006-12-15 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7842999B2 (en) 2007-05-17 2010-11-30 Elpida Memory, Inc. Semiconductor memory device and method of manufacturing the same
WO2011145738A1 (en) 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
JP5993141B2 (ja) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 記憶装置
JP2015018940A (ja) * 2013-07-11 2015-01-29 ルネサスエレクトロニクス株式会社 半導体装置
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
KR20170068511A (ko) * 2014-10-06 2017-06-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2017111798A1 (en) * 2015-12-23 2017-06-29 Intel Corporation High retention time memory element with dual gate devices
KR102473660B1 (ko) * 2016-02-22 2022-12-02 삼성전자주식회사 메모리 소자 및 그 제조 방법
KR102330605B1 (ko) * 2016-06-22 2021-11-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2018085357A (ja) 2016-11-21 2018-05-31 株式会社半導体エネルギー研究所 記憶装置、及び電子機器

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Also Published As

Publication number Publication date
CN112313792B (zh) 2025-12-16
JP2024019354A (ja) 2024-02-08
JP7401430B2 (ja) 2023-12-19
US11443796B2 (en) 2022-09-13
US11922999B2 (en) 2024-03-05
WO2019243957A1 (ja) 2019-12-26
CN112313792A (zh) 2021-02-02
KR20210022041A (ko) 2021-03-02
CN121442688A (zh) 2026-01-30
KR102851545B1 (ko) 2025-08-28
US20230005528A1 (en) 2023-01-05
US20210257020A1 (en) 2021-08-19
JPWO2019243957A1 (ja) 2021-07-08
JP2025124855A (ja) 2025-08-26

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PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

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