JP7390296B2 - 撮像モジュールのパーティクル欠陥を解消するald製造方法及びその生成物 - Google Patents
撮像モジュールのパーティクル欠陥を解消するald製造方法及びその生成物 Download PDFInfo
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- JP7390296B2 JP7390296B2 JP2020538658A JP2020538658A JP7390296B2 JP 7390296 B2 JP7390296 B2 JP 7390296B2 JP 2020538658 A JP2020538658 A JP 2020538658A JP 2020538658 A JP2020538658 A JP 2020538658A JP 7390296 B2 JP7390296 B2 JP 7390296B2
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Description
反応キャビティにベース基板を入れ、100~400℃に加熱するステップS1と、
第1反応前駆体を原子層反応キャビティ内に導入し、ベース基板に化学吸着させ、第1膜層を形成するステップS2と、
過剰の第1反応前駆体を排出し、不活性ガスでパージするステップS3と、
第2反応前駆体を反応キャビティ内に導入し、ベース基板の表面に化学吸着された第1反応前駆体と反応させ、第1屈折率層を形成するステップS4と、
過剰の第2反応前駆体及び反応副生成物を排出し、不活性ガスでパージするステップS5と、
第3反応前駆体を反応キャビティ内に導入し、第1屈折率層の表面に化学吸着させ、第2膜層を形成するステップS6と、
過剰の第3反応前駆体を排出し、不活性ガスでパージするステップS7と、
第4反応前駆体を原子層反応キャビティ内に導入し、第1屈折率層の表面に化学吸着された第3反応前駆体と反応させ、屈折率が第1屈折率層より大きい屈折率の第2屈折率層を形成するステップS8と、
過剰の第4反応前駆体及び反応副生成物を排出するステップS9とを含む、ことを特徴とする撮像モジュールのパーティクル欠陥を解消するALD製造方法。
(1)ALD(Atomic layer deposition、原子層堆積)によって、高・低屈折率の膜層を光学素子に交互に堆積することができ、反応材料が気体の形態で反応キャビティにおいてベース基板上に吸着によって堆積し、蒸発又はスパッタリング過程がなくなり、それによりパーティクル欠陥を引き起こすソースを解消し、従って、大粒子のパーティクル欠陥を形成することがなく、それにより、撮像モジュールの結像品質を大幅に向上させ、撮像モジュールの加工過程におけるALDの実用性が活用される。
第1反応前駆体を原子層反応キャビティ内に導入し、ベース基板に化学吸着させ、第1膜層を形成するステップS2と、
過剰の第1反応前駆体を排出し、不活性ガスでパージするステップS3と、
第2反応前駆体を反応キャビティ内に導入し、ベース基板の表面に化学吸着された第1反応前駆体と反応させ、第1屈折率層を形成するステップS4と、
過剰の第2反応前駆体及び反応副生成物を排出し、不活性ガスでパージするステップS5と、
第3反応前駆体を反応キャビティ内に導入し、第1屈折率層の表面に化学吸着させ、第2膜層を形成するステップS6と、
過剰の第3反応前駆体を排出し、不活性ガスでパージするステップS7と、
第4反応前駆体を原子層反応キャビティ内に導入し、第1屈折率層の表面に化学吸着された第3反応前駆体と反応させ、屈折率が第1屈折率層より大きい屈折率の第2屈折率層を形成するステップS8と、
過剰の第4反応前駆体及び反応副生成物を排出するステップS9とを含む、ことを特徴とする撮像モジュールのパーティクル欠陥を解消するALD製造方法。
撮像モジュールであって、図2~5に示すように、CLCCパッケージを備え、CLCCパッケージは、基板1を備え、前記基板1上には、中央部に位置するCMOS 2、縁位置に位置するコンデンサ抵抗3及び駆動モータ4が貼り付けられ、前記基板1上には仕切り壁台座5が設けられ、前記仕切り壁台座5において、基板のCMOS 2、コンデンサ抵抗3及び駆動モータ4に対応する位置には、それぞれCMOSセンサ空位置、コンデンサ抵抗空位置及び駆動モータ空位置が設けられ、前記CMOSセンサ空位置の上面には、カバープレート6が取り付けられており、カバープレート6の表面パーティクルのサイズが1μm以下であり、粗さRaが1.342nmである。
まずガラス基板を原子層反応キャビティに入れ、0.6Paまで真空引きし、150℃に加熱するS1、
不活性ガスをキャリアとし、SiH4(シラン)を第1反応前駆体として反応キャビティに30~50ms導入し、ベース基板の表面に化学吸着して第1膜層を形成するS2、
余分な第1反応前駆体(SiH4)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS3と、
不活性ガスをキャリアとし、オゾン(O3)を第2反応前駆体として原子層反応キャビティに20ms導入し、第1膜層と反応させてシリカ低屈折率層Lを形成するS4、
完全に反応した後、第2反応前駆体オゾン及び第1反応前駆体(SiH4)が第2反応前駆体オゾンと反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージし、プラズマ衝撃によって表面改質を行うS5、
不活性ガスをキャリアとし、塩化タンタルVガスを第3反応前駆体として反応キャビティに20~30ms導入し、低屈折率層Lの改質後の表面に吸着させ、第2膜層を形成するS6、
余分な第3反応前駆体(塩化タンタルVガス)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS7、
不活性ガスをキャリアとし、水蒸気を第4反応前駆体として原子層反応キャビティに20ms導入し、第2膜層と反応させ、五酸化タンタル屈折率層Hを形成するS8、
余分な第4反応前駆体(水蒸気)及び第3反応前駆体(塩化タンタルVガス)が第4反応前駆体(水蒸気)と反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS9。
本実施例のターゲット製品は、実施例1と同様であり、用いる真空熱蒸発の製造方法の過程は、以下のとおりである。
まずベース基板ガラスを治具に入れ、治具をドームホルダーに置き、ドームホルダーをコーティング機のチャンバーに入れるステップS1。
撮像モジュールであって、CLCCパッケージを備え、CLCCパッケージは、基板1を備え、前記基板1上には、中央部に位置するCMOS 2、縁位置に位置するコンデンサ抵抗3及び駆動モータ4が貼り付けられ、前記基板1上には仕切り壁台座5が設けられ、前記仕切り壁台座5において、基板のCMOS 2、コンデンサ抵抗3及び駆動モータ4に対応する位置には、それぞれCMOSセンサ空位置、コンデンサ抵抗空位置及び駆動モータ空位置が設けられ、前記CMOSセンサ空位置の上面には、カバープレート6が取り付けられており、カバープレート6の表面パーティクルのサイズが10nm以下であり、粗さRaが1.340nmである。
まずガラス基板を反応キャビティに入れ、0.6Paまで真空引きし、250℃に加熱するS1、
SiH4(シラン)を第1反応前駆体として原子層反応キャビティに好ましくは30~50ms導入し、ベース基板の表面に化学吸着して第1膜層を形成するS2、
余分な第1反応前駆体(SiH4)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS3、
オゾン(O3)を第2反応前駆体として反応キャビティに20ms導入し、第1膜層と反応させてシリカ低屈折率層Lを形成するS4、
完全に反応した後、第2反応前駆体オゾン及び第1反応前駆体(SiH4)が第2反応前駆体オゾンと反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージし、プラズマ衝撃によって表面改質を行うS5、
ヨウ化チタン(IV)ガスを第3反応前駆体として原子層反応キャビティに好ましくは30~50ms導入し、低屈折率層Lの表面に吸着させ、第2膜層を形成するS6、
余分な第3反応前駆体(ヨウ化チタン(IV)ガス)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS7、
水蒸気を第4反応前駆体として原子層反応キャビティに35ms導入し、第2膜層と反応させ、二酸化チタン屈折率層Hを形成するS8、
余分な第4反応前駆体(水蒸気)及び第3反応前駆体(ヨウ化チタン(IV)ガス)が第4反応前駆体(水蒸気)と反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS9。
撮像モジュールであって、CLCCパッケージを備え、CLCCパッケージは、基板1を備え、前記基板1上には、中央部に位置するCMOS 2、縁位置に位置するコンデンサ抵抗3及び駆動モータ4が貼り付けられ、前記基板1上には仕切り壁台座5が設けられ、前記仕切り壁台座5において、基板のCMOS 2、コンデンサ抵抗3及び駆動モータ4に対応する位置には、それぞれCMOSセンサ空位置、コンデンサ抵抗空位置及び駆動モータ空位置が設けられ、前記CMOSセンサ空位置の上面には、カバープレート6が取り付けられており、カバープレート6の表面パーティクルのサイズ≦50nm、粗さRaが9.440nmである。
まず水晶基板を反応キャビティに入れ、0.6Paまで真空引きし、400℃に加熱するS1、
SiH4(シラン)を第1反応前駆体として原子層反応キャビティに好ましくは15~20msパルスで導入し、ベース基板の表面に化学吸着して第1膜層を形成するS2、
余分な第1反応前駆体(SiH4)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS3、
オゾン(O3)を第2反応前駆体として原子層反応キャビティに15~20ms導入し、第1膜層と反応させてシリカ低屈折率層Lを形成するS4、
完全に反応した後、第2反応前駆体オゾン及び第1反応前駆体(SiH4)が第2反応前駆体オゾンと反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージし、プラズマ衝撃によって表面改質を行うS5、
ヨウ化ジルコニウム(IV)ガスを第3反応前駆体として原子層反応キャビティに15~20ms導入し、低屈折率層Lの表面に吸着させ、第2膜層を形成するS6、
余分な第3反応前駆体(ヨウ化ジルコニウム(IV)ガス)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS7、
水蒸気を第4反応前駆体として原子層反応キャビティに15~20ms導入し、第2膜層と反応させ、二酸化チタン屈折率層Hを形成するS8、
余分な第4反応前駆体(水蒸気)及び第3反応前駆体(ヨウ化ジルコニウム(IV)ガス)が第4反応前駆体(水蒸気)と反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS9。
撮像モジュールであって、CLCCパッケージを備え、CLCCパッケージは、基板1を備え、前記基板1上には、中央部に位置するCMOS 2、縁位置に位置するコンデンサ抵抗3及び駆動モータ4が貼り付けられ、前記基板1上には仕切り壁台座5が設けられ、前記仕切り壁台座5において、基板のCMOS 2、コンデンサ抵抗3及び駆動モータ4に対応する位置には、それぞれCMOSセンサ空位置、コンデンサ抵抗空位置及び駆動モータ空位置が設けられ、前記CMOSセンサ空位置の上面には、カバープレート6が取り付けられており、カバープレート6の表面パーティクルのサイズが100nm以下であり、粗さRaが7.581nmである。
まずサファイア基板を原子層反応キャビティに入れ、0.6Paまで真空引きし、100℃に加熱するS1、
SiH4(シラン)を第1反応前駆体として原子層反応キャビティに30~50ms導入し、ベース基板の表面に化学吸着して第1膜層を形成するS2、
余分な第1反応前駆体(SiH4)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS3、
酸素ガス(O2)を第2反応前駆体として原子層反応キャビティに20~40ms導入し、第1膜層と反応させてシリカ低屈折率層Lを形成するS4、
完全に反応した後、第2反応前駆体オゾン及び第1反応前駆体(SiH4)が第2反応前駆体オゾンと反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージし、プラズマ衝撃によって表面改質を行うS5、
ヨウ化チタン(IV)ガスを第3反応前駆体として原子層反応キャビティに15~30ms導入し、低屈折率層Lの表面に吸着させ、第2膜層を形成するS6、
余分な第3反応前駆体(ヨウ化チタン(IV)ガス)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS7、
水蒸気を第4反応前駆体として原子層反応キャビティに15~30ms導入し、第2膜層と反応させ、二酸化チタン屈折率層Hを形成するS8、
余分な第4反応前駆体(水蒸気)及び第3反応前駆体(ヨウ化チタン(IV)ガス)が第4反応前駆体(水蒸気)と反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で20~30sパージするS9。
撮像モジュールであって、CLCCパッケージを備え、CLCCパッケージは、基板1を備え、前記基板1上には、中央部に位置するCMOS 2、縁位置に位置するコンデンサ抵抗3及び駆動モータ4が貼り付けられ、前記基板1上には仕切り壁台座5が設けられ、前記仕切り壁台座5において、基板のCMOS 2、コンデンサ抵抗3及び駆動モータ4に対応する位置には、それぞれCMOSセンサ空位置、コンデンサ抵抗空位置及び駆動モータ空位置が設けられ、前記CMOSセンサ空位置の上面には、カバープレート6が取り付けられており、カバープレート6の表面パーティクルのサイズが10nm以下であり、粗さRaが0.622nmである。
層厚100~200nm、屈折率1.46~1.50のシリカ低屈折率層L1、
層厚10~50nm、屈折率2.28~2.35の二酸化チタン高屈折率層H1、
層厚100~200nm、屈折率1.46~1.50のシリカ低屈折率層L2、
層厚80~120nm、屈折率2.05~2.2の五酸化タンタル高屈折率層H2、
層厚5~300nm、屈折率1.46~1.50のシリカ低屈折率層L3。
まずサファイア基板を原子層反応キャビティに入れ、0.6Paまで真空引きし、200℃に加熱するS1、
SiH4(シラン)を第1反応前駆体として原子層反応キャビティに30~50ms導入し、ベース基板の表面に化学吸着して第1膜層を形成するS2、
余分な第1反応前駆体(SiH4)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で15sパージするS3、
酸素ガス(O2)を第2反応前駆体として原子層反応キャビティに導入し、第1膜層と反応させてシリカ低屈折率層L1を形成するS4、
完全に反応した後、第2反応前駆体オゾン及び第1反応前駆体(SiH4)が第2反応前駆体オゾンと反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で15sパージし、プラズマ衝撃によって表面改質を行うS5、
塩化タンタルVガスを第3反応前駆体として原子層反応キャビティに10~30ms導入し、低屈折率層L1の表面に吸着させ、第2膜層を形成するS6、
余分な第3反応前駆体(塩化タンタルVガス)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で15sパージするS7、
水蒸気を第4反応前駆体として原子層反応キャビティに導入し、第2膜層と反応させ、二酸化チタン屈折率層H1を形成するS8、
余分な第4反応前駆体(水蒸気)及び第3反応前駆体(塩化タンタルVガス)が第4反応前駆体(水蒸気)と反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で15sパージし、プラズマ衝撃によって表面改質を行うS9、
SiH4(シラン)を第5反応前駆体として原子層反応キャビティに30~50ms導入し、ベース基板の表面に化学吸着させて第3膜層を形成するS10、
余分な第5反応前駆体(SiH4)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で15sパージするS11、
オゾン(O3)を第6反応前駆体として原子層反応キャビティに導入し、第3膜層と反応させてシリカ低屈折率層L2を形成するS12、
余分な第6反応前駆体オゾン及び第5反応前駆体(SiH4)が第6反応前駆体オゾンと反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で15sパージし、プラズマ衝撃によって表面改質を行うS13、
塩化タンタルVガスを第7反応前駆体として原子層反応キャビティに10~30ms導入し、低屈折率層L2の表面に吸着し、第4膜層を形成するS14、
余分な第7反応前駆体(塩化タンタルVガス)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で15sパージするS15、
水蒸気を第8反応前駆体として原子層反応キャビティに導入し、第4膜層と反応させ、五酸化タンタル屈折率層H2を形成するS16、
余分な第8反応前駆体(水蒸気)及び第7反応前駆体(塩化タンタルVガス)が第8反応前駆体(水蒸気)と反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で15sパージし、プラズマ衝撃によって表面改質を行うS17、
SiH4(シラン)を第9反応前駆体として原子層反応キャビティに10~50ms導入し、ベース基板の表面に吸着させて第5膜層を形成するS18、
余分な第9反応前駆体(SiH4)を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で15sパージするS19、
オゾン(O3)を第10反応前駆体として原子層反応キャビティに導入し、第5膜層と反応させてシリカ低屈折率層L3を形成するS20、
完全に反応した後、余分な第10反応前駆体オゾン及び第9反応前駆体(SiH4)が第10反応前駆体オゾンと反応した副生成物を排出し、不活性ガス(例えば、ヘリウムガス、アルゴンなど)で15sパージするS21。
2 CMOS
3 コンデンサ抵抗
4 駆動モータ
5 仕切り壁台座
6 カバープレート
Claims (6)
- 反応キャビティにベース基板を入れ、150~250℃に加熱するステップS1と、
第1反応前駆体を原子層反応キャビティ内に導入し、ベース基板に化学吸着させ、第1膜層を温度320~370℃で形成するステップS2と、
過剰の第1反応前駆体を排出し、不活性ガスでパージするステップS3と、
第2反応前駆体を反応キャビティ内に導入し、ベース基板の表面に化学吸着された第1反応前駆体と反応させ、第1屈折率層を温度320~370℃で形成するステップS4と、
過剰の第2反応前駆体及び反応副生成物を排出し、不活性ガスでパージするステップS5と、
第3反応前駆体を反応キャビティ内に導入し、第1屈折率層の表面に化学吸着させ、第2膜層を温度220~270℃で形成するステップS6と、
過剰の第3反応前駆体を排出し、不活性ガスでパージするステップS7と、
第4反応前駆体を原子層反応キャビティ内に導入し、第1屈折率層の表面に化学吸着された第3反応前駆体と反応させ、屈折率が第1屈折率層より大きい屈折率の第2屈折率層を温度220~270℃で形成するステップS8と、
過剰の第4反応前駆体及び反応副生成物を排出するステップS9とを含み、
前記ベース基板は、ガラス、水晶又はサファイア基板であり、
第N-1屈折率層上に第N屈折率層を形成するステップをさらに含み、Nが3以上の正整数であり、
前記Nが偶数である偶数屈折率層の屈折率が、前記Nが奇数である奇数屈折率層の屈折率より大きく、
前記屈折率層は、SiO2低屈折率層LとTiO2高屈折率層H;SiO2低屈折率層LとNb2O5高屈折率層H;SiO2低屈折率層LとTa3O5高屈折率層H;MgF2低屈折率層LとTiO2高屈折率層H;MgF2低屈折率層LとNb2O5高屈折率層H;Nb2O5低屈折率層LとTa3O5高屈折率層H;MgF2低屈折率層LまたはSiO2低屈折率層Lと、Al2O3高屈折率層H;Al2O3低屈折率層LまたはMgF2低屈折率層Lと、ZrO2高屈折率層H;の組み合わせのいずれかを含む
ことを特徴とする撮像モジュールのパーティクル欠陥を解消するALD製造方法。 - 請求項1に記載の撮像モジュールのパーティクル欠陥を解消するALD製造方法で製造される多層膜構造であって、
前記多層膜構造では、サイズが1μm以上のパーティクルの数が0であり、
表面粗さRa範囲が、0.01nm~20nmである
ことを特徴とする多層膜構造。 - 前記ALD製造方法では、各層の膜構造の堆積完了後、次の層の膜構造の堆積前、プラズマを用いて現在の堆積層に対して衝撃改質を行うステップを含む
請求項2に記載の多層膜構造。 - カバープレート基板と、カバープレート基板上に被覆される機能膜とを備え、前記機能膜は、請求項1に記載のALD製造方法によって堆積される多層膜構造を含み、各層の膜構造の堆積完了後、次の層の膜構造の堆積前、プラズマを用いて現在の堆積層に対して衝撃改質を行うステップを含む
ことを特徴とするCLCCパッケージカバープレート。 - CLCCパッケージであって、基板(1)を備え、前記基板(1)上には中央部に位置するCMOS(2)、縁位置に位置するコンデンサ抵抗(3)及び駆動モータ(4)が貼り付けられ、前記基板(1)上には仕切り壁台座(5)が設けられ、前記仕切り壁台座(5)において、基板のCMOS(2)、コンデンサ抵抗(3)及び駆動モータ(4)に対応する位置には、それぞれCMOSセンサ空位置、コンデンサ抵抗空位置及び駆動モータ空位置が設けられ、前記CMOSセンサ空位置の上面には請求項4に記載のCLCCパッケージカバープレート(6)が取り付けられている
ことを特徴とするCLCCパッケージ。 - 請求項5に記載のCLCCパッケージを備える
ことを特徴とする撮像モジュール。
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