JP7387604B2 - 半導体発光素子および半導体発光素子の製造方法 - Google Patents
半導体発光素子および半導体発光素子の製造方法 Download PDFInfo
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- JP7387604B2 JP7387604B2 JP2020531191A JP2020531191A JP7387604B2 JP 7387604 B2 JP7387604 B2 JP 7387604B2 JP 2020531191 A JP2020531191 A JP 2020531191A JP 2020531191 A JP2020531191 A JP 2020531191A JP 7387604 B2 JP7387604 B2 JP 7387604B2
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- 239000004065 semiconductor Substances 0.000 title claims description 78
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000005253 cladding Methods 0.000 claims description 44
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 39
- 229910052738 indium Inorganic materials 0.000 claims description 18
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 18
- 230000003746 surface roughness Effects 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 15
- 150000004767 nitrides Chemical class 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
Description
1.実施の形態
(活性層側に0.5%以上のInを含む第1層と第1層よりも屈折率の低い第2層とを有するn型クラッド層を設け、共振器端面をエッチングにより形成する例)
1-1.半導体発光素子の構成
1-2.半導体発光素子の製造方法
1-3.作用・効果
図1は、本開示の一実施の形態に係る半導体発光素子(半導体レーザ1)の断面構成の一例を模式的に表したものである。半導体レーザ1は、例えば可視領域、特に450nm以上の波長のレーザ光を発振する窒化物系の半導体レーザであり、例えばレーザディスプレイやポインタ等の光源として用いられるものである。本実施の形態の半導体レーザ1は、基板11と活性層15との間に、活性層15側に設けられ、インジウム(In)を0.5%以上含むAlGaInNからなる第1層13Aおよび基板11側に設けられた、第1層13Aよりも屈折率の低い第2層13Bの2層を有するn型クラッド層13が設けられた構成を有する。なお、図1は、半導体レーザ1の断面構成を模式的に表したものであり、実際の寸法,形状とは異なっている。
半導体レーザ1は、基板11上に半導体層を有している。基板11上の半導体層は、例えば、基板11側から、下地層12、n型クラッド層13、n型ガイド層14、活性層15、p型ガイド層16、p型クラッド層17およびコンタクト層18がこの順に積層されたている。半導体レーザ1は、さらに基板11の裏面(上記半導体層の形成面とは反対側の面)に下部電極21を有しており、コンタクト層18上に上部電極22を有している。
本実施の形態の半導体レーザ1は、例えば以下のように製造することができる。図2は、半導体レーザ1の製造方法の流れを表したものであり、図3A~図3Cは、半導体レーザ1の製造方法を工程順に表したものである。
前述したように、近年、光源用途として窒化物半導体を用いた青色帯域~緑色帯域の光を発する半導体レーザおよび発光ダイオードの開発が活発に行われている。その中でも、半極性や非極性の窒化物半導体は、ピエゾ電界の影響を小さくでき、長波長帯域の光を発する半導体発光素子を構成する上で効果的である。
(1)
c面からm軸方向またはa軸方向に20°以上90°以下の範囲で傾斜した半極性面または非極性面を主面とするGaN基板と、
前記GaN基板上に設けられた活性層と、
前記GaN基板と前記活性層との間に設けられると共に、前記活性層側にインジウム(In)を0.5%以上含むAlGaInNからなる第1層および前記基板側に前記第1層よりも屈折率の低い第2層と有するn型クラッド層と、
前記活性層上に設けられたp型クラッド層とを備え、
共振器端面を構成する前記第1層の表面粗さは前記p型クラッド層の表面粗さよりも小さい
半導体発光素子。
(2)
前記第1層の組成範囲は、AlxInyGazN(0≦x≦0.995,0.005≦y≦1,0<z≦0.995,x+y+z=1)である、前記(1)に記載の半導体発光素子。
(3)
前記第1層は50nm以上2000nm以下の厚みを有する、前記(1)または(2)に記載の半導体発光素子。
(4)
前記GaN基板の面方位は、(1-100)、(20-21)、(20-2-1)、(30-31)、(30-3-1)、(10-11)、(11-20)、(11-22)および(11-24)のうちのいずれかである、前記(1)乃至(3)のうちのいずれかに記載の半導体発光素子。
(5)
前記活性層は450nm以上のピーク波長を有するレーザ光を発振する、前記(1)乃至(4)のうちのいずれかに記載の半導体発光素子。
(6)
前記第1層は、ドーパントとしてケイ素(Si)、酸素(O)またはゲルマニウム(Ge)を含む、前記(1)乃至(5)のうちのいずれかに記載の半導体発光素子。
(7)
c面からm軸方向またはa軸方向に20°以上90°以下の範囲で傾斜した半極性面または非極性面を主面とするGaN基板と、
前記GaN基板上に設けられると共に、450nm以上のピーク波長を有するレーザ光を発振する活性層と、
前記GaN基板と前記活性層との間に設けられると共に、前記活性層側にインジウム(In)を0.5%以上含むAlGaInNからなる第1層および前記基板側に前記第1層よりも屈折率の低い第2層と有するn型クラッド層と
を備えた半導体発光素子。
(8)
c面からm軸方向またはa軸方向に20°以上90°以下の範囲で傾斜した半極性面または非極性面を主面とするGaN基板上に、
インジウム(In)を0.5%以上含むAlGaInNからなる第1層と、前記第1層よりも屈折率の低い第2層とを、第2層および第1層の順に有するn型クラッド層を形成し、
前記n型クラッド層上に活性層を形成し、
前記活性層上にp型クラッド層を形成したのち、ドライエッチングを用いて共振器端面を形成する
半導体発光素子の製造方法。
Claims (8)
- c面からm軸方向またはa軸方向に20°以上90°以下の範囲で傾斜した半極性面または非極性面を主面とするGaN基板と、
前記GaN基板上に設けられた活性層と、
前記GaN基板と前記活性層との間に設けられると共に、前記活性層側にインジウム(In)を0.5%以上含むAlGaInNからなる第1層および前記基板側に前記第1層よりも屈折率の低い第2層と有するn型クラッド層と、
前記活性層上に設けられたp型クラッド層とを備え、
共振器端面を構成する前記第1層の表面粗さは前記p型クラッド層の表面粗さよりも小さい
半導体発光素子。 - 前記第1層の組成範囲は、AlxInyGazN(0≦x≦0.995,0.005≦y≦1,0<z≦0.995,x+y+z=1)である、請求項1に記載の半導体発光素子。
- 前記第1層は50nm以上2000nm以下の厚みを有する、請求項1に記載の半導体発光素子。
- 前記GaN基板の面方位は、(1-100)、(20-21)、(20-2-1)、(30-31)、(30-3-1)、(10-11)、(11-20)、(11-22)および(11-24)のうちのいずれかである、請求項1に記載の半導体発光素子。
- 前記活性層は450nm以上のピーク波長を有するレーザ光を発振する、請求項1に記載の半導体発光素子。
- 前記第1層は、ドーパントとしてケイ素(Si)、酸素(O)またはゲルマニウム(Ge)を含む、請求項1に記載の半導体発光素子。
- c面からm軸方向またはa軸方向に20°以上90°以下の範囲で傾斜した半極性面または非極性面を主面とするGaN基板と、
前記GaN基板上に設けられると共に、450nm以上のピーク波長を有するレーザ光を発振する活性層と、
前記GaN基板と前記活性層との間に設けられると共に、前記活性層側にインジウム(In)を0.5%以上含むAlGaInNからなる第1層および前記基板側に前記第1層よりも屈折率の低い第2層と有するn型クラッド層と
を備えた半導体発光素子。 - c面からm軸方向またはa軸方向に20°以上90°以下の範囲で傾斜した半極性面または非極性面を主面とするGaN基板上に、
インジウム(In)を0.5%以上含むAlGaInNからなる第1層と、前記第1層よりも屈折率の低い第2層とを、第2層および第1層の順に有するn型クラッド層を形成し、
前記n型クラッド層上に活性層を形成し、
前記活性層上にp型クラッド層を形成したのち、ドライエッチングを用いて共振器端面を形成する
半導体発光素子の製造方法。
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