JP7381223B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP7381223B2
JP7381223B2 JP2019098499A JP2019098499A JP7381223B2 JP 7381223 B2 JP7381223 B2 JP 7381223B2 JP 2019098499 A JP2019098499 A JP 2019098499A JP 2019098499 A JP2019098499 A JP 2019098499A JP 7381223 B2 JP7381223 B2 JP 7381223B2
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Japan
Prior art keywords
photoelectric conversion
semiconductor layer
insulating
insulating film
conversion device
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JP2019098499A
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English (en)
Japanese (ja)
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JP2020194841A5 (enExample
JP2020194841A (ja
Inventor
孝泰 金定
紘司 原
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2019098499A priority Critical patent/JP7381223B2/ja
Priority to US16/879,016 priority patent/US11721711B2/en
Publication of JP2020194841A publication Critical patent/JP2020194841A/ja
Publication of JP2020194841A5 publication Critical patent/JP2020194841A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
JP2019098499A 2019-05-27 2019-05-27 光電変換装置 Active JP7381223B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019098499A JP7381223B2 (ja) 2019-05-27 2019-05-27 光電変換装置
US16/879,016 US11721711B2 (en) 2019-05-27 2020-05-20 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019098499A JP7381223B2 (ja) 2019-05-27 2019-05-27 光電変換装置

Publications (3)

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JP2020194841A JP2020194841A (ja) 2020-12-03
JP2020194841A5 JP2020194841A5 (enExample) 2022-08-18
JP7381223B2 true JP7381223B2 (ja) 2023-11-15

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JP2019098499A Active JP7381223B2 (ja) 2019-05-27 2019-05-27 光電変換装置

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US (1) US11721711B2 (enExample)
JP (1) JP7381223B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7551277B2 (ja) * 2019-01-31 2024-09-17 キヤノン株式会社 半導体装置、機器
KR20220145978A (ko) * 2021-04-22 2022-11-01 삼성전자주식회사 반도체 소자

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011258884A (ja) 2010-06-11 2011-12-22 Panasonic Corp 固体撮像装置およびその製造方法
WO2014050694A1 (ja) 2012-09-28 2014-04-03 ソニー株式会社 半導体装置および電子機器
JP2016134614A (ja) 2015-01-22 2016-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20160343750A1 (en) 2015-05-18 2016-11-24 Canon Kabushiki Kaisha Image pickup apparatus, image pickup system, and method for manufacturing image pickup apparatus
US20180315789A1 (en) 2017-04-27 2018-11-01 Renesas Electronics Corporation Semiconductor device and method for manufacturing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000500296A (ja) 1996-09-10 2000-01-11 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 電荷結合素子及びそのような素子を製造する方法
JP2009295918A (ja) 2008-06-09 2009-12-17 Panasonic Corp 固体撮像装置及びその製造方法
JP5427541B2 (ja) 2009-10-08 2014-02-26 富士フイルム株式会社 固体撮像素子及びその製造方法並びに撮像装置
JP6161258B2 (ja) 2012-11-12 2017-07-12 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
JP2016032045A (ja) 2014-07-29 2016-03-07 株式会社東芝 固体撮像装置及びその製造方法
JP2016146376A (ja) 2015-02-06 2016-08-12 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP6577724B2 (ja) * 2015-03-13 2019-09-18 キヤノン株式会社 固体撮像装置の製造方法
JP6598504B2 (ja) 2015-05-07 2019-10-30 キヤノン株式会社 半導体装置の製造方法
JP2017045838A (ja) 2015-08-26 2017-03-02 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
US10319765B2 (en) * 2016-07-01 2019-06-11 Canon Kabushiki Kaisha Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011258884A (ja) 2010-06-11 2011-12-22 Panasonic Corp 固体撮像装置およびその製造方法
WO2014050694A1 (ja) 2012-09-28 2014-04-03 ソニー株式会社 半導体装置および電子機器
US20150221694A1 (en) 2012-09-28 2015-08-06 Sony Corporation Semiconductor device and electronic appliance
JP2016134614A (ja) 2015-01-22 2016-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20160218125A1 (en) 2015-01-22 2016-07-28 Renesas Electronics Corporation Method of manufacturing semiconductor device
US20160343750A1 (en) 2015-05-18 2016-11-24 Canon Kabushiki Kaisha Image pickup apparatus, image pickup system, and method for manufacturing image pickup apparatus
JP2016219550A (ja) 2015-05-18 2016-12-22 キヤノン株式会社 撮像装置、撮像システムおよび撮像装置の製造方法
US20180315789A1 (en) 2017-04-27 2018-11-01 Renesas Electronics Corporation Semiconductor device and method for manufacturing the same
JP2018186211A (ja) 2017-04-27 2018-11-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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US11721711B2 (en) 2023-08-08
US20200381469A1 (en) 2020-12-03
JP2020194841A (ja) 2020-12-03

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