JP7370473B2 - 半導体レーザモジュール - Google Patents

半導体レーザモジュール Download PDF

Info

Publication number
JP7370473B2
JP7370473B2 JP2022543358A JP2022543358A JP7370473B2 JP 7370473 B2 JP7370473 B2 JP 7370473B2 JP 2022543358 A JP2022543358 A JP 2022543358A JP 2022543358 A JP2022543358 A JP 2022543358A JP 7370473 B2 JP7370473 B2 JP 7370473B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser module
electrode body
conductive
module according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022543358A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022039016A1 (https=
JPWO2022039016A5 (https=
Inventor
大輔 森田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2022039016A1 publication Critical patent/JPWO2022039016A1/ja
Publication of JPWO2022039016A5 publication Critical patent/JPWO2022039016A5/ja
Application granted granted Critical
Publication of JP7370473B2 publication Critical patent/JP7370473B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2022543358A 2020-08-19 2021-08-03 半導体レーザモジュール Active JP7370473B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020138426 2020-08-19
JP2020138426 2020-08-19
PCT/JP2021/028696 WO2022039016A1 (ja) 2020-08-19 2021-08-03 半導体レーザモジュール

Publications (3)

Publication Number Publication Date
JPWO2022039016A1 JPWO2022039016A1 (https=) 2022-02-24
JPWO2022039016A5 JPWO2022039016A5 (https=) 2022-11-04
JP7370473B2 true JP7370473B2 (ja) 2023-10-27

Family

ID=80322665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022543358A Active JP7370473B2 (ja) 2020-08-19 2021-08-03 半導体レーザモジュール

Country Status (4)

Country Link
US (1) US20230253757A1 (https=)
JP (1) JP7370473B2 (https=)
DE (1) DE112021004341T5 (https=)
WO (1) WO2022039016A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114784618A (zh) * 2022-06-22 2022-07-22 度亘激光技术（苏州）有限公司 芯片封装方法、负极片及激光器
CN115102029B (zh) * 2022-06-22 2023-11-07 度亘激光技术（苏州）有限公司 负极片及激光器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144137A (ja) 1999-10-28 2001-05-25 Hewlett Packard Co <Hp> 半導体デバイスアセンブリ
US20030234451A1 (en) 2002-06-25 2003-12-25 Eli Razon Stabilized wire bonded electrical connections and method of making same
JP2005108907A (ja) 2003-09-29 2005-04-21 Laserfront Technologies Inc レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
JP2006299331A (ja) 2005-04-19 2006-11-02 Mitsubishi Shoji Plast Kk プラズマｃｖｄ成膜装置及びガスバリア性を有するプラスチック容器の製造方法
JP2017003551A (ja) 2015-06-08 2017-01-05 文　光中 垂直コイルバネプローブ
US20170301606A1 (en) 2016-04-19 2017-10-19 Hyundai Mobis Co., Ltd. Bidirectional semiconductor package
WO2019009086A1 (ja) 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 半導体レーザ装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7572679B2 (en) * 2007-07-26 2009-08-11 Texas Instruments Incorporated Heat extraction from packaged semiconductor chips, scalable with chip area
JP6472683B2 (ja) 2015-03-09 2019-02-20 株式会社クリスタルシステム 半導体レーザモジュール

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144137A (ja) 1999-10-28 2001-05-25 Hewlett Packard Co <Hp> 半導体デバイスアセンブリ
US20030234451A1 (en) 2002-06-25 2003-12-25 Eli Razon Stabilized wire bonded electrical connections and method of making same
JP2005108907A (ja) 2003-09-29 2005-04-21 Laserfront Technologies Inc レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
JP2006299331A (ja) 2005-04-19 2006-11-02 Mitsubishi Shoji Plast Kk プラズマｃｖｄ成膜装置及びガスバリア性を有するプラスチック容器の製造方法
JP2017003551A (ja) 2015-06-08 2017-01-05 文　光中 垂直コイルバネプローブ
US20170301606A1 (en) 2016-04-19 2017-10-19 Hyundai Mobis Co., Ltd. Bidirectional semiconductor package
WO2019009086A1 (ja) 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 半導体レーザ装置

Also Published As

Publication number Publication date
JPWO2022039016A1 (https=) 2022-02-24
DE112021004341T5 (de) 2023-05-25
US20230253757A1 (en) 2023-08-10
WO2022039016A1 (ja) 2022-02-24

Similar Documents

Publication Publication Date Title
EP2239823B1 (en) Laser light source module
US8063484B2 (en) Semiconductor device and heat sink with 3-dimensional thermal conductivity
JP6580244B2 (ja) 半導体レーザ光源装置
JPWO2011074262A1 (ja) レーザモジュール
CN108604768B (zh) 半导体激光器装置及其制造方法
JP7370473B2 (ja) 半導体レーザモジュール
JPWO2017072849A1 (ja) レーザ光源モジュール
JPH11265976A (ja) パワー半導体モジュールおよびその製造方法
JP2011216766A (ja) 電極部材およびこれを用いた半導体装置
JPWO2022039016A5 (https=)
CN117767105A (zh) 一种陶瓷热沉及其组合
JP6573451B2 (ja) 半導体レーザユニット及び半導体レーザ装置
JP2018113377A (ja) レーザー光源装置
JP2009158644A (ja) レーザモジュール
JP7515703B2 (ja) 半導体レーザモジュールおよびレーザ加工装置
CN117117627B (zh) 一种激光单元和激光器
JP7343842B2 (ja) 半導体レーザ光源装置
JP2008010597A (ja) 半導体発光素子接合体およびサブマウント
JP2025097170A (ja) 半導体レーザモジュールおよびその製造方法並びにレーザ加工装置
WO2021246290A1 (ja) レーザモジュール
JP2019067981A (ja) ヒートシンク
JP2005135933A (ja) 半導体レーザの製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220905

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220905

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230704

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230904

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230919

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20231017

R150 Certificate of patent or registration of utility model

Ref document number: 7370473

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150