DE112021004341T5 - Halbleiterlasermodul - Google Patents

Halbleiterlasermodul Download PDF

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Publication number
DE112021004341T5
DE112021004341T5 DE112021004341.2T DE112021004341T DE112021004341T5 DE 112021004341 T5 DE112021004341 T5 DE 112021004341T5 DE 112021004341 T DE112021004341 T DE 112021004341T DE 112021004341 T5 DE112021004341 T5 DE 112021004341T5
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser module
electrode assembly
laser element
linear elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112021004341.2T
Other languages
German (de)
English (en)
Inventor
Daisuke Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE112021004341T5 publication Critical patent/DE112021004341T5/de
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02407Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423Liquid cooling, e.g. a liquid cools a mount of the laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/02365Fixing laser chips on mounts by clamping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04256Electrodes, e.g. characterised by the structure characterised by the configuration

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE112021004341.2T 2020-08-19 2021-08-03 Halbleiterlasermodul Ceased DE112021004341T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020138426 2020-08-19
JP2020-138426 2020-08-19
PCT/JP2021/028696 WO2022039016A1 (ja) 2020-08-19 2021-08-03 半導体レーザモジュール

Publications (1)

Publication Number Publication Date
DE112021004341T5 true DE112021004341T5 (de) 2023-05-25

Family

ID=80322665

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021004341.2T Ceased DE112021004341T5 (de) 2020-08-19 2021-08-03 Halbleiterlasermodul

Country Status (4)

Country Link
US (1) US20230253757A1 (https=)
JP (1) JP7370473B2 (https=)
DE (1) DE112021004341T5 (https=)
WO (1) WO2022039016A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114784618A (zh) * 2022-06-22 2022-07-22 度亘激光技术(苏州)有限公司 芯片封装方法、负极片及激光器
CN115102029B (zh) * 2022-06-22 2023-11-07 度亘激光技术(苏州)有限公司 负极片及激光器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6472683B2 (ja) 2015-03-09 2019-02-20 株式会社クリスタルシステム 半導体レーザモジュール

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313523B1 (en) * 1999-10-28 2001-11-06 Hewlett-Packard Company IC die power connection using canted coil spring
US7032311B2 (en) * 2002-06-25 2006-04-25 Eli Razon Stabilized wire bonded electrical connections and method of making same
JP4037815B2 (ja) * 2003-09-29 2008-01-23 オムロンレーザーフロント株式会社 レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
JP4854983B2 (ja) * 2005-04-19 2012-01-18 三菱商事プラスチック株式会社 プラズマcvd成膜装置及びガスバリア性を有するプラスチック容器の製造方法
US7572679B2 (en) * 2007-07-26 2009-08-11 Texas Instruments Incorporated Heat extraction from packaged semiconductor chips, scalable with chip area
JP2017003551A (ja) * 2015-06-08 2017-01-05 文 光中 垂直コイルバネプローブ
KR102508945B1 (ko) * 2016-04-19 2023-03-09 현대모비스 주식회사 양방향 반도체 패키지
EP3651291B1 (en) * 2017-07-07 2021-03-10 Panasonic Intellectual Property Management Co., Ltd. Semiconductor laser device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6472683B2 (ja) 2015-03-09 2019-02-20 株式会社クリスタルシステム 半導体レーザモジュール

Also Published As

Publication number Publication date
JPWO2022039016A1 (https=) 2022-02-24
JP7370473B2 (ja) 2023-10-27
US20230253757A1 (en) 2023-08-10
WO2022039016A1 (ja) 2022-02-24

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R012 Request for examination validly filed
R084 Declaration of willingness to licence
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final