JPWO2022039016A1 - - Google Patents

Info

Publication number
JPWO2022039016A1
JPWO2022039016A1 JP2022543358A JP2022543358A JPWO2022039016A1 JP WO2022039016 A1 JPWO2022039016 A1 JP WO2022039016A1 JP 2022543358 A JP2022543358 A JP 2022543358A JP 2022543358 A JP2022543358 A JP 2022543358A JP WO2022039016 A1 JPWO2022039016 A1 JP WO2022039016A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022543358A
Other languages
Japanese (ja)
Other versions
JPWO2022039016A5 (https=
JP7370473B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022039016A1 publication Critical patent/JPWO2022039016A1/ja
Publication of JPWO2022039016A5 publication Critical patent/JPWO2022039016A5/ja
Application granted granted Critical
Publication of JP7370473B2 publication Critical patent/JP7370473B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2022543358A 2020-08-19 2021-08-03 半導体レーザモジュール Active JP7370473B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020138426 2020-08-19
JP2020138426 2020-08-19
PCT/JP2021/028696 WO2022039016A1 (ja) 2020-08-19 2021-08-03 半導体レーザモジュール

Publications (3)

Publication Number Publication Date
JPWO2022039016A1 true JPWO2022039016A1 (https=) 2022-02-24
JPWO2022039016A5 JPWO2022039016A5 (https=) 2022-11-04
JP7370473B2 JP7370473B2 (ja) 2023-10-27

Family

ID=80322665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022543358A Active JP7370473B2 (ja) 2020-08-19 2021-08-03 半導体レーザモジュール

Country Status (4)

Country Link
US (1) US20230253757A1 (https=)
JP (1) JP7370473B2 (https=)
DE (1) DE112021004341T5 (https=)
WO (1) WO2022039016A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114784618A (zh) * 2022-06-22 2022-07-22 度亘激光技术（苏州）有限公司 芯片封装方法、负极片及激光器
CN115102029B (zh) * 2022-06-22 2023-11-07 度亘激光技术（苏州）有限公司 负极片及激光器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144137A (ja) * 1999-10-28 2001-05-25 Hewlett Packard Co <Hp> 半導体デバイスアセンブリ
US20030234451A1 (en) * 2002-06-25 2003-12-25 Eli Razon Stabilized wire bonded electrical connections and method of making same
JP2005108907A (ja) * 2003-09-29 2005-04-21 Laserfront Technologies Inc レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
JP2006299331A (ja) * 2005-04-19 2006-11-02 Mitsubishi Shoji Plast Kk プラズマｃｖｄ成膜装置及びガスバリア性を有するプラスチック容器の製造方法
JP2017003551A (ja) * 2015-06-08 2017-01-05 文　光中 垂直コイルバネプローブ
US20170301606A1 (en) * 2016-04-19 2017-10-19 Hyundai Mobis Co., Ltd. Bidirectional semiconductor package
WO2019009086A1 (ja) * 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 半導体レーザ装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7572679B2 (en) * 2007-07-26 2009-08-11 Texas Instruments Incorporated Heat extraction from packaged semiconductor chips, scalable with chip area
JP6472683B2 (ja) 2015-03-09 2019-02-20 株式会社クリスタルシステム 半導体レーザモジュール

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144137A (ja) * 1999-10-28 2001-05-25 Hewlett Packard Co <Hp> 半導体デバイスアセンブリ
US20030234451A1 (en) * 2002-06-25 2003-12-25 Eli Razon Stabilized wire bonded electrical connections and method of making same
JP2005108907A (ja) * 2003-09-29 2005-04-21 Laserfront Technologies Inc レーザダイオードモジュール、レーザ装置、及びレーザ加工装置
JP2006299331A (ja) * 2005-04-19 2006-11-02 Mitsubishi Shoji Plast Kk プラズマｃｖｄ成膜装置及びガスバリア性を有するプラスチック容器の製造方法
JP2017003551A (ja) * 2015-06-08 2017-01-05 文　光中 垂直コイルバネプローブ
US20170301606A1 (en) * 2016-04-19 2017-10-19 Hyundai Mobis Co., Ltd. Bidirectional semiconductor package
WO2019009086A1 (ja) * 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 半導体レーザ装置

Also Published As

Publication number Publication date
DE112021004341T5 (de) 2023-05-25
JP7370473B2 (ja) 2023-10-27
US20230253757A1 (en) 2023-08-10
WO2022039016A1 (ja) 2022-02-24

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