JP7360851B2 - シャッタ装置、成膜装置、成膜方法及び電子デバイスの製造方法 - Google Patents

シャッタ装置、成膜装置、成膜方法及び電子デバイスの製造方法 Download PDF

Info

Publication number
JP7360851B2
JP7360851B2 JP2019159759A JP2019159759A JP7360851B2 JP 7360851 B2 JP7360851 B2 JP 7360851B2 JP 2019159759 A JP2019159759 A JP 2019159759A JP 2019159759 A JP2019159759 A JP 2019159759A JP 7360851 B2 JP7360851 B2 JP 7360851B2
Authority
JP
Japan
Prior art keywords
shutter
film
width direction
forming
pinion gear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019159759A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021038425A (ja
Inventor
徹 山根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Tokki Corp
Original Assignee
Canon Tokki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Priority to JP2019159759A priority Critical patent/JP7360851B2/ja
Priority to KR1020200031802A priority patent/KR20210027032A/ko
Priority to CN202010303201.4A priority patent/CN112442660B/zh
Publication of JP2021038425A publication Critical patent/JP2021038425A/ja
Application granted granted Critical
Publication of JP7360851B2 publication Critical patent/JP7360851B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
JP2019159759A 2019-09-02 2019-09-02 シャッタ装置、成膜装置、成膜方法及び電子デバイスの製造方法 Active JP7360851B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019159759A JP7360851B2 (ja) 2019-09-02 2019-09-02 シャッタ装置、成膜装置、成膜方法及び電子デバイスの製造方法
KR1020200031802A KR20210027032A (ko) 2019-09-02 2020-03-16 셔터 장치, 성막 장치, 성막 방법 및 전자 디바이스의 제조방법
CN202010303201.4A CN112442660B (zh) 2019-09-02 2020-04-17 挡板装置、成膜装置、成膜方法及电子设备的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019159759A JP7360851B2 (ja) 2019-09-02 2019-09-02 シャッタ装置、成膜装置、成膜方法及び電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2021038425A JP2021038425A (ja) 2021-03-11
JP7360851B2 true JP7360851B2 (ja) 2023-10-13

Family

ID=74733474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019159759A Active JP7360851B2 (ja) 2019-09-02 2019-09-02 シャッタ装置、成膜装置、成膜方法及び電子デバイスの製造方法

Country Status (3)

Country Link
JP (1) JP7360851B2 (ko)
KR (1) KR20210027032A (ko)
CN (1) CN112442660B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113278926B (zh) * 2021-04-16 2022-06-03 布勒莱宝光学设备（北京）有限公司 一种镀膜遮挡装置及包含其的镀膜装置
JP2023076939A (ja) * 2021-11-24 2023-06-05 キヤノントッキ株式会社 成膜装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014051733A (ja) 2012-09-04 2014-03-20 Samsung Display Co Ltd 蒸着環境検査用マスク組立体、当該蒸着環境検査用マスク組立体を含む蒸着設備、及び、当該蒸着設備を利用する蒸着環境検査方法
JP2016030839A (ja) 2014-07-28 2016-03-07 株式会社Ｊｏｌｅｄ 蒸着装置および蒸発源

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003115379A (ja) 2001-09-28 2003-04-18 Kiko Kenji Kagi Kofun Yugenkoshi 有機ｅｌ素子製造装置
JP2007332433A (ja) * 2006-06-16 2007-12-27 Seiko Epson Corp 真空蒸着装置
CN101760720A (zh) * 2009-12-30 2010-06-30 东莞宏威数码机械有限公司 真空腔体遮挡装置
KR102309842B1 (ko) 2014-05-08 2021-10-08 엘지디스플레이 주식회사 유기 발광 다이오드 표시장치 및 그 제조방법
KR101901072B1 (ko) * 2017-10-31 2018-09-20 캐논 톡키 가부시키가이샤 증발원 장치, 성막 장치, 성막 방법 및 전자 디바이스의 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014051733A (ja) 2012-09-04 2014-03-20 Samsung Display Co Ltd 蒸着環境検査用マスク組立体、当該蒸着環境検査用マスク組立体を含む蒸着設備、及び、当該蒸着設備を利用する蒸着環境検査方法
JP2016030839A (ja) 2014-07-28 2016-03-07 株式会社Ｊｏｌｅｄ 蒸着装置および蒸発源

Also Published As

Publication number Publication date
JP2021038425A (ja) 2021-03-11
CN112442660B (zh) 2024-03-08
CN112442660A (zh) 2021-03-05
KR20210027032A (ko) 2021-03-10

Similar Documents

Publication Publication Date Title
EP2264214B1 (en) Thin film deposition apparatus
JP7360851B2 (ja) シャッタ装置、成膜装置、成膜方法及び電子デバイスの製造方法
JP2012207263A (ja) 蒸着方法および蒸着装置
KR101210035B1 (ko) 진공 증착 방법 및 그 장치
JP5567905B2 (ja) 真空蒸着方法及びその装置
US20090269492A1 (en) Apparatus and Method for Deposition Organic Compounds, and Substrate Treating Facility With the Apparatus
WO2007078694A1 (en) Reciprocating aperture mask system and method
JP2013211137A6 (ja) 真空蒸着方法及びその装置
JP2013211137A (ja) 真空蒸着方法及びその装置
US20210265605A1 (en) Film formation device, vapor-deposited film formation method, and organic el display device production method
KR102550586B1 (ko) 흡착 및 얼라인먼트 방법, 흡착 시스템, 성막 방법, 성막 장치 및 전자 디바이스의 제조 방법
JP6754474B2 (ja) 成膜装置、蒸着膜の成膜方法および有機ｅｌ表示装置の製造方法
CN114990490A (zh) 成膜装置、成膜方法以及电子器件的制造方法
TW201333231A (zh) 用於連續沉積薄膜的設備
WO2024090178A1 (ja) 蒸発源、成膜装置、及び成膜方法
JP7291098B2 (ja) 成膜装置、成膜方法、及び電子デバイスの製造方法
JP7202971B2 (ja) 蒸発源装置、成膜装置、成膜方法および電子デバイスの製造方法
WO2024116668A1 (ja) 蒸発源ユニット、成膜装置及び成膜方法
JP5843779B2 (ja) 有機ｅｌ素子の製造装置
JP5658520B2 (ja) 蒸着装置
JP2013108106A (ja) 蒸着装置及び蒸着装置の運転方法
KR20240013442A (ko) 성막 장치 및 전자 디바이스의 제조방법
JP2022107969A (ja) 成膜装置、成膜方法及び電子デバイスの製造方法
CN117535627A (zh) 成膜装置及电子器件的制造方法
KR20240013458A (ko) 성막 장치 및 전자 디바이스의 제조방법

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220809

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230315

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230328

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230526

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230905

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20231002

R150 Certificate of patent or registration of utility model

Ref document number: 7360851

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150