JP7352717B2 - 光検出素子およびイメージセンサ - Google Patents

光検出素子およびイメージセンサ Download PDF

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Publication number
JP7352717B2
JP7352717B2 JP2022500385A JP2022500385A JP7352717B2 JP 7352717 B2 JP7352717 B2 JP 7352717B2 JP 2022500385 A JP2022500385 A JP 2022500385A JP 2022500385 A JP2022500385 A JP 2022500385A JP 7352717 B2 JP7352717 B2 JP 7352717B2
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semiconductor quantum
group
ligand
quantum dots
atoms
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Japanese (ja)
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JPWO2021161938A1 (https=
Inventor
真宏 高田
雅司 小野
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Fujifilm Corp
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Fujifilm Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2022500385A 2020-02-13 2021-02-08 光検出素子およびイメージセンサ Active JP7352717B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020022575 2020-02-13
JP2020022575 2020-02-13
PCT/JP2021/004475 WO2021161938A1 (ja) 2020-02-13 2021-02-08 光検出素子およびイメージセンサ

Publications (2)

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JPWO2021161938A1 JPWO2021161938A1 (https=) 2021-08-19
JP7352717B2 true JP7352717B2 (ja) 2023-09-28

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JP2022500385A Active JP7352717B2 (ja) 2020-02-13 2021-02-08 光検出素子およびイメージセンサ

Country Status (6)

Country Link
US (1) US12446388B2 (https=)
JP (1) JP7352717B2 (https=)
KR (1) KR102809886B1 (https=)
CN (1) CN115104189B (https=)
TW (1) TWI886210B (https=)
WO (1) WO2021161938A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023288288A1 (en) 2021-07-15 2023-01-19 Turn Biotechnologies, Inc. Synthetic, persistent rna constructs with on/off mechanism for controlled expression and methods of use
US20230044997A1 (en) 2021-07-15 2023-02-09 Turn Biotechnologies, Inc. Synthetic, persistent rna constructs and methods of use for cell rejuvenation and for treatment
KR20250008602A (ko) * 2023-07-06 2025-01-15 삼성디스플레이 주식회사 양자점 복합체, 양자점 복합체를 포함하는 발광 소자, 및 양자점 복합체를 포함하는 표시 장치
WO2025063060A1 (ja) * 2023-09-20 2025-03-27 富士フイルム株式会社 半導体膜、光検出素子およびイメージセンサ

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009513018A (ja) 2005-10-20 2009-03-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溶液から調製されるナノクリスタル太陽電池
JP2014093327A (ja) 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
JP2015537378A (ja) 2012-10-26 2015-12-24 リサーチ トライアングル インスティテュート 溶液プロセスによる量子ドットを利用した中間帯半導体、ヘテロ接合、及び光電子デバイス、並びに関連する方法
US20170062139A1 (en) 2015-08-31 2017-03-02 The University Of Akron Photodetector utilizing quantum dots and perovskite hybrids as light harvesters
US20180254421A1 (en) 2015-10-02 2018-09-06 Toyota Motor Europe All quantum dot based optoelectronic device
JP2018529214A (ja) 2015-06-11 2018-10-04 ユニバーシティー オブ フロリダ リサーチ ファウンデーション, インコーポレイテッドUniversity Of Florida Research Foundation, Inc. 単分散ｉｒ吸収ナノ粒子及び関連する方法及びデバイス
WO2019150989A1 (ja) 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5488595B2 (ja) * 2009-05-22 2014-05-14 コニカミノルタ株式会社 有機光電変換素子
WO2015031835A1 (en) * 2013-08-29 2015-03-05 University Of Florida Research Foundation, Inc. Air stable infrared photodetectors from solution-processed inorganic semiconductors
US9318632B2 (en) * 2013-11-14 2016-04-19 University Of South Florida Bare quantum dots superlattice photonic devices

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009513018A (ja) 2005-10-20 2009-03-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溶液から調製されるナノクリスタル太陽電池
JP2015537378A (ja) 2012-10-26 2015-12-24 リサーチ トライアングル インスティテュート 溶液プロセスによる量子ドットを利用した中間帯半導体、ヘテロ接合、及び光電子デバイス、並びに関連する方法
JP2014093327A (ja) 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
JP2018529214A (ja) 2015-06-11 2018-10-04 ユニバーシティー オブ フロリダ リサーチ ファウンデーション, インコーポレイテッドUniversity Of Florida Research Foundation, Inc. 単分散ｉｒ吸収ナノ粒子及び関連する方法及びデバイス
US20170062139A1 (en) 2015-08-31 2017-03-02 The University Of Akron Photodetector utilizing quantum dots and perovskite hybrids as light harvesters
US20180254421A1 (en) 2015-10-02 2018-09-06 Toyota Motor Europe All quantum dot based optoelectronic device
WO2019150989A1 (ja) 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BOHM, M. L. et al.，Size and Energy Level Tuning of Quantum Dot Solids via a Hybrid Ligand Complex，THE JOURNAL OF PHYSICAL CHEMISTRY LETTERS，2015年08月24日，Vol. 6，pp. 3510-3514
PRADHAN, S. et al.，Trap-State Suppression and improved Charge Transport in PbS Quantum Dot Solar Cells with Synergistic，SMALL，2017年04月12日，Vol. 13，pp. 1700598-1 - 1700598-9
XU, J. et al.，High-sensitivity broadband colloidal quantum dot heterojunction photodetector for night-sky radiatio，JOURNAL OF ALLOYS AND COMPOUNDS，2018年06月15日，Vol. 764，pp. 446-451

Also Published As

Publication number Publication date
KR102809886B1 (ko) 2025-05-19
US12446388B2 (en) 2025-10-14
KR20220124220A (ko) 2022-09-13
TW202135333A (zh) 2021-09-16
TWI886210B (zh) 2025-06-11
CN115104189B (zh) 2024-12-10
US20220384753A1 (en) 2022-12-01
CN115104189A (zh) 2022-09-23
WO2021161938A1 (ja) 2021-08-19
JPWO2021161938A1 (https=) 2021-08-19

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