TWI886210B - 光檢測元件及影像感測器 - Google Patents

光檢測元件及影像感測器 Download PDF

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Publication number
TWI886210B
TWI886210B TW110104510A TW110104510A TWI886210B TW I886210 B TWI886210 B TW I886210B TW 110104510 A TW110104510 A TW 110104510A TW 110104510 A TW110104510 A TW 110104510A TW I886210 B TWI886210 B TW I886210B
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TW
Taiwan
Prior art keywords
semiconductor quantum
quantum dot
atoms
light detection
detection element
Prior art date
Application number
TW110104510A
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English (en)
Chinese (zh)
Other versions
TW202135333A (zh
Inventor
宏
小野雅司
Original Assignee
日商富士軟片股份有限公司
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Publication of TW202135333A publication Critical patent/TW202135333A/zh
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Publication of TWI886210B publication Critical patent/TWI886210B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW110104510A 2020-02-13 2021-02-05 光檢測元件及影像感測器 TWI886210B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020022575 2020-02-13
JP2020-022575 2020-02-13

Publications (2)

Publication Number Publication Date
TW202135333A TW202135333A (zh) 2021-09-16
TWI886210B true TWI886210B (zh) 2025-06-11

Family

ID=77292222

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110104510A TWI886210B (zh) 2020-02-13 2021-02-05 光檢測元件及影像感測器

Country Status (6)

Country Link
US (1) US12446388B2 (https=)
JP (1) JP7352717B2 (https=)
KR (1) KR102809886B1 (https=)
CN (1) CN115104189B (https=)
TW (1) TWI886210B (https=)
WO (1) WO2021161938A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023288288A1 (en) 2021-07-15 2023-01-19 Turn Biotechnologies, Inc. Synthetic, persistent rna constructs with on/off mechanism for controlled expression and methods of use
US20230044997A1 (en) 2021-07-15 2023-02-09 Turn Biotechnologies, Inc. Synthetic, persistent rna constructs and methods of use for cell rejuvenation and for treatment
KR20250008602A (ko) * 2023-07-06 2025-01-15 삼성디스플레이 주식회사 양자점 복합체, 양자점 복합체를 포함하는 발광 소자, 및 양자점 복합체를 포함하는 표시 장치
WO2025063060A1 (ja) * 2023-09-20 2025-03-27 富士フイルム株式会社 半導体膜、光検出素子およびイメージセンサ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014093327A (ja) * 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
CN105493295A (zh) * 2013-08-29 2016-04-13 佛罗里达大学研究基金会有限公司 来自溶液处理的无机半导体的空气稳定红外光探测器
US9318632B2 (en) * 2013-11-14 2016-04-19 University Of South Florida Bare quantum dots superlattice photonic devices
WO2019150989A1 (ja) * 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置

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JP2009513018A (ja) * 2005-10-20 2009-03-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溶液から調製されるナノクリスタル太陽電池
JP5488595B2 (ja) * 2009-05-22 2014-05-14 コニカミノルタ株式会社 有機光電変換素子
AU2013334164A1 (en) * 2012-10-26 2015-04-09 Research Triangle Institute Intermediate band semiconductors, heterojunctions, and optoelectronic devices utilizing solution processed quantum dots, and related methods
CA2988784A1 (en) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Monodisperse, ir-absorbing nanoparticles and related methods and devices
CN106486558A (zh) * 2015-08-31 2017-03-08 阿克伦大学 利用量子点和钙钛矿混合物作为集光体的光电探测器
US10897023B2 (en) * 2015-10-02 2021-01-19 Toyota Motor Europe All quantum dot based optoelectronic device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014093327A (ja) * 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
CN105493295A (zh) * 2013-08-29 2016-04-13 佛罗里达大学研究基金会有限公司 来自溶液处理的无机半导体的空气稳定红外光探测器
US9318632B2 (en) * 2013-11-14 2016-04-19 University Of South Florida Bare quantum dots superlattice photonic devices
WO2019150989A1 (ja) * 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
期刊 Junfeng Xu et al. High-sensitivity broadband colloidal quantum dot heterojunction photodetector for night-sky radiation Journal of Alloys and Compounds Vol.764 Elsevier B.V. 2018.06.15 P446-451; *
期刊 Santanu Pradhan1 et al. Trap-State Suppression and improved Charge Transport in PbS Quantum Dot Solar Cells with Synergistic Mixed-Ligand Treatments SMALL Vol.13 2017.04.12 P1-25 *

Also Published As

Publication number Publication date
KR102809886B1 (ko) 2025-05-19
US12446388B2 (en) 2025-10-14
KR20220124220A (ko) 2022-09-13
TW202135333A (zh) 2021-09-16
CN115104189B (zh) 2024-12-10
US20220384753A1 (en) 2022-12-01
CN115104189A (zh) 2022-09-23
WO2021161938A1 (ja) 2021-08-19
JPWO2021161938A1 (https=) 2021-08-19
JP7352717B2 (ja) 2023-09-28

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