CN115104189B - 光检测元件及图像传感器 - Google Patents

光检测元件及图像传感器 Download PDF

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Publication number
CN115104189B
CN115104189B CN202180013673.9A CN202180013673A CN115104189B CN 115104189 B CN115104189 B CN 115104189B CN 202180013673 A CN202180013673 A CN 202180013673A CN 115104189 B CN115104189 B CN 115104189B
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China
Prior art keywords
semiconductor quantum
ligand
atoms
quantum dots
quantum dot
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CN202180013673.9A
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English (en)
Chinese (zh)
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CN115104189A (zh
Inventor
高田真宏
小野雅司
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Fujifilm Corp
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Fujifilm Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202180013673.9A 2020-02-13 2021-02-08 光检测元件及图像传感器 Active CN115104189B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020022575 2020-02-13
JP2020-022575 2020-02-13
PCT/JP2021/004475 WO2021161938A1 (ja) 2020-02-13 2021-02-08 光検出素子およびイメージセンサ

Publications (2)

Publication Number Publication Date
CN115104189A CN115104189A (zh) 2022-09-23
CN115104189B true CN115104189B (zh) 2024-12-10

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Country Link
US (1) US12446388B2 (https=)
JP (1) JP7352717B2 (https=)
KR (1) KR102809886B1 (https=)
CN (1) CN115104189B (https=)
TW (1) TWI886210B (https=)
WO (1) WO2021161938A1 (https=)

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Publication number Priority date Publication date Assignee Title
WO2023288288A1 (en) 2021-07-15 2023-01-19 Turn Biotechnologies, Inc. Synthetic, persistent rna constructs with on/off mechanism for controlled expression and methods of use
US20230044997A1 (en) 2021-07-15 2023-02-09 Turn Biotechnologies, Inc. Synthetic, persistent rna constructs and methods of use for cell rejuvenation and for treatment
KR20250008602A (ko) * 2023-07-06 2025-01-15 삼성디스플레이 주식회사 양자점 복합체, 양자점 복합체를 포함하는 발광 소자, 및 양자점 복합체를 포함하는 표시 장치
WO2025063060A1 (ja) * 2023-09-20 2025-03-27 富士フイルム株式会社 半導体膜、光検出素子およびイメージセンサ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010134432A1 (ja) * 2009-05-22 2010-11-25 コニカミノルタホールディングス株式会社 有機光電変換素子

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JP2009513018A (ja) * 2005-10-20 2009-03-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溶液から調製されるナノクリスタル太陽電池
AU2013334164A1 (en) * 2012-10-26 2015-04-09 Research Triangle Institute Intermediate band semiconductors, heterojunctions, and optoelectronic devices utilizing solution processed quantum dots, and related methods
JP6177515B2 (ja) * 2012-10-31 2017-08-09 富士フイルム株式会社 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
WO2015031835A1 (en) * 2013-08-29 2015-03-05 University Of Florida Research Foundation, Inc. Air stable infrared photodetectors from solution-processed inorganic semiconductors
US9318632B2 (en) * 2013-11-14 2016-04-19 University Of South Florida Bare quantum dots superlattice photonic devices
CA2988784A1 (en) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Monodisperse, ir-absorbing nanoparticles and related methods and devices
CN106486558A (zh) * 2015-08-31 2017-03-08 阿克伦大学 利用量子点和钙钛矿混合物作为集光体的光电探测器
US10897023B2 (en) * 2015-10-02 2021-01-19 Toyota Motor Europe All quantum dot based optoelectronic device
CN111630668B (zh) * 2018-01-31 2025-01-17 索尼公司 光电转换元件和摄像装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010134432A1 (ja) * 2009-05-22 2010-11-25 コニカミノルタホールディングス株式会社 有機光電変換素子

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
High-sensitivity broadband colloidal quantum dot heterojunction photodetector for night-sky radiation;Junfeng Xu, et al.;《Journal of Alloys and Compounds》;第764卷;第446-451页 *
Trap-State Suppression and Improved Charge Transport in PbS Quantum Dot Solar Cells with Synergistic Mixed-Ligand Treatments;Santanu Pradhan, et al.;《SMALL》;第13卷;第1700598(1-9)页 *

Also Published As

Publication number Publication date
KR102809886B1 (ko) 2025-05-19
US12446388B2 (en) 2025-10-14
KR20220124220A (ko) 2022-09-13
TW202135333A (zh) 2021-09-16
TWI886210B (zh) 2025-06-11
US20220384753A1 (en) 2022-12-01
CN115104189A (zh) 2022-09-23
WO2021161938A1 (ja) 2021-08-19
JPWO2021161938A1 (https=) 2021-08-19
JP7352717B2 (ja) 2023-09-28

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