KR102809886B1 - 광검출 소자 및 이미지 센서 - Google Patents

광검출 소자 및 이미지 센서 Download PDF

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Publication number
KR102809886B1
KR102809886B1 KR1020227026904A KR20227026904A KR102809886B1 KR 102809886 B1 KR102809886 B1 KR 102809886B1 KR 1020227026904 A KR1020227026904 A KR 1020227026904A KR 20227026904 A KR20227026904 A KR 20227026904A KR 102809886 B1 KR102809886 B1 KR 102809886B1
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South Korea
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semiconductor quantum
quantum dot
ligand
photodetector
group
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Korean (ko)
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KR20220124220A (ko
Inventor
마사히로 다카타
마사시 오노
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후지필름 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020227026904A 2020-02-13 2021-02-08 광검출 소자 및 이미지 센서 Active KR102809886B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-022575 2020-02-13
JP2020022575 2020-02-13
PCT/JP2021/004475 WO2021161938A1 (ja) 2020-02-13 2021-02-08 光検出素子およびイメージセンサ

Publications (2)

Publication Number Publication Date
KR20220124220A KR20220124220A (ko) 2022-09-13
KR102809886B1 true KR102809886B1 (ko) 2025-05-19

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KR1020227026904A Active KR102809886B1 (ko) 2020-02-13 2021-02-08 광검출 소자 및 이미지 센서

Country Status (6)

Country Link
US (1) US12446388B2 (https=)
JP (1) JP7352717B2 (https=)
KR (1) KR102809886B1 (https=)
CN (1) CN115104189B (https=)
TW (1) TWI886210B (https=)
WO (1) WO2021161938A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023288288A1 (en) 2021-07-15 2023-01-19 Turn Biotechnologies, Inc. Synthetic, persistent rna constructs with on/off mechanism for controlled expression and methods of use
US20230044997A1 (en) 2021-07-15 2023-02-09 Turn Biotechnologies, Inc. Synthetic, persistent rna constructs and methods of use for cell rejuvenation and for treatment
KR20250008602A (ko) * 2023-07-06 2025-01-15 삼성디스플레이 주식회사 양자점 복합체, 양자점 복합체를 포함하는 발광 소자, 및 양자점 복합체를 포함하는 표시 장치
WO2025063060A1 (ja) * 2023-09-20 2025-03-27 富士フイルム株式会社 半導体膜、光検出素子およびイメージセンサ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014093327A (ja) * 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
WO2019150989A1 (ja) * 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009513018A (ja) * 2005-10-20 2009-03-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溶液から調製されるナノクリスタル太陽電池
JP5488595B2 (ja) * 2009-05-22 2014-05-14 コニカミノルタ株式会社 有機光電変換素子
AU2013334164A1 (en) * 2012-10-26 2015-04-09 Research Triangle Institute Intermediate band semiconductors, heterojunctions, and optoelectronic devices utilizing solution processed quantum dots, and related methods
WO2015031835A1 (en) * 2013-08-29 2015-03-05 University Of Florida Research Foundation, Inc. Air stable infrared photodetectors from solution-processed inorganic semiconductors
US9318632B2 (en) * 2013-11-14 2016-04-19 University Of South Florida Bare quantum dots superlattice photonic devices
CA2988784A1 (en) 2015-06-11 2017-03-09 University Of Florida Research Foundation, Incorporated Monodisperse, ir-absorbing nanoparticles and related methods and devices
CN106486558A (zh) * 2015-08-31 2017-03-08 阿克伦大学 利用量子点和钙钛矿混合物作为集光体的光电探测器
US10897023B2 (en) * 2015-10-02 2021-01-19 Toyota Motor Europe All quantum dot based optoelectronic device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014093327A (ja) * 2012-10-31 2014-05-19 Fujifilm Corp 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
WO2019150989A1 (ja) * 2018-01-31 2019-08-08 ソニー株式会社 光電変換素子および撮像装置

Also Published As

Publication number Publication date
US12446388B2 (en) 2025-10-14
KR20220124220A (ko) 2022-09-13
TW202135333A (zh) 2021-09-16
TWI886210B (zh) 2025-06-11
CN115104189B (zh) 2024-12-10
US20220384753A1 (en) 2022-12-01
CN115104189A (zh) 2022-09-23
WO2021161938A1 (ja) 2021-08-19
JPWO2021161938A1 (https=) 2021-08-19
JP7352717B2 (ja) 2023-09-28

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