JP7339509B2 - 発光素子の製造方法 - Google Patents

発光素子の製造方法 Download PDF

Info

Publication number
JP7339509B2
JP7339509B2 JP2019143119A JP2019143119A JP7339509B2 JP 7339509 B2 JP7339509 B2 JP 7339509B2 JP 2019143119 A JP2019143119 A JP 2019143119A JP 2019143119 A JP2019143119 A JP 2019143119A JP 7339509 B2 JP7339509 B2 JP 7339509B2
Authority
JP
Japan
Prior art keywords
irradiation
laser beam
line
scanning
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019143119A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021027127A (ja
JP2021027127A5 (https=
Inventor
幹之 茨木
稔 山本
直人 井上
広昭 爲本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2019143119A priority Critical patent/JP7339509B2/ja
Priority to US16/945,729 priority patent/US11769852B2/en
Publication of JP2021027127A publication Critical patent/JP2021027127A/ja
Publication of JP2021027127A5 publication Critical patent/JP2021027127A5/ja
Application granted granted Critical
Publication of JP7339509B2 publication Critical patent/JP7339509B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Dicing (AREA)
JP2019143119A 2019-08-02 2019-08-02 発光素子の製造方法 Active JP7339509B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019143119A JP7339509B2 (ja) 2019-08-02 2019-08-02 発光素子の製造方法
US16/945,729 US11769852B2 (en) 2019-08-02 2020-07-31 Method of cutting a substrate along dividing lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019143119A JP7339509B2 (ja) 2019-08-02 2019-08-02 発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2021027127A JP2021027127A (ja) 2021-02-22
JP2021027127A5 JP2021027127A5 (https=) 2021-09-30
JP7339509B2 true JP7339509B2 (ja) 2023-09-06

Family

ID=74258878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019143119A Active JP7339509B2 (ja) 2019-08-02 2019-08-02 発光素子の製造方法

Country Status (2)

Country Link
US (1) US11769852B2 (https=)
JP (1) JP7339509B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024021699A (ja) * 2022-08-04 2024-02-16 株式会社ディスコ チップの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006203251A (ja) 2004-10-07 2006-08-03 Showa Denko Kk 半導体素子の製造方法
JP2012028452A (ja) 2010-07-21 2012-02-09 Hamamatsu Photonics Kk レーザ加工方法
JP2017017163A (ja) 2015-06-30 2017-01-19 日亜化学工業株式会社 半導体素子の製造方法
JP2018037470A (ja) 2016-08-29 2018-03-08 日亜化学工業株式会社 発光素子の製造方法
JP2018142702A (ja) 2017-02-27 2018-09-13 日亜化学工業株式会社 半導体素子の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4167094B2 (ja) 2003-03-10 2008-10-15 浜松ホトニクス株式会社 レーザ加工方法
JP4959422B2 (ja) * 2007-05-30 2012-06-20 株式会社ディスコ ウエーハの分割方法
JP6574176B2 (ja) * 2013-10-29 2019-09-11 ルミレッズ ホールディング ベーフェー 発光デバイスのウエハを分離する方法
JP2016129202A (ja) 2015-01-09 2016-07-14 株式会社ディスコ ウエーハの加工方法
JP2016129203A (ja) 2015-01-09 2016-07-14 株式会社ディスコ ウエーハの加工方法
JP6260601B2 (ja) 2015-10-02 2018-01-17 日亜化学工業株式会社 半導体素子の製造方法
JP6669144B2 (ja) 2016-12-16 2020-03-18 日亜化学工業株式会社 発光素子の製造方法
US10505072B2 (en) 2016-12-16 2019-12-10 Nichia Corporation Method for manufacturing light emitting element
JP6504194B2 (ja) 2017-03-31 2019-04-24 日亜化学工業株式会社 発光素子の製造方法
US10700012B2 (en) * 2017-04-14 2020-06-30 Qualcomm Incorporated Porous silicon dicing
JP6955893B2 (ja) * 2017-04-25 2021-10-27 株式会社ディスコ レーザー加工装置の高さ位置検出ユニットの評価用治具及びレーザー加工装置の高さ位置検出ユニットの評価方法
JP7128054B2 (ja) * 2018-08-07 2022-08-30 株式会社ディスコ ウェーハの加工方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006203251A (ja) 2004-10-07 2006-08-03 Showa Denko Kk 半導体素子の製造方法
JP2012028452A (ja) 2010-07-21 2012-02-09 Hamamatsu Photonics Kk レーザ加工方法
JP2017017163A (ja) 2015-06-30 2017-01-19 日亜化学工業株式会社 半導体素子の製造方法
JP2018037470A (ja) 2016-08-29 2018-03-08 日亜化学工業株式会社 発光素子の製造方法
JP2018142702A (ja) 2017-02-27 2018-09-13 日亜化学工業株式会社 半導体素子の製造方法

Also Published As

Publication number Publication date
JP2021027127A (ja) 2021-02-22
US11769852B2 (en) 2023-09-26
US20210036182A1 (en) 2021-02-04

Similar Documents

Publication Publication Date Title
US9653644B2 (en) Method for manufacturing semiconductor element
CN104508800B (zh) 加工对象物切断方法
US10672660B2 (en) Method of manufacturing semiconductor element
US10639747B2 (en) Method of manufacturing light emitting element
TWI447964B (zh) LED wafer manufacturing method
KR101426598B1 (ko) 레이저 다이싱 방법
KR101920343B1 (ko) 플라즈마 에칭을 갖는 하이브리드 갈바닉 레이저 스크라이빙 프로세스를 이용한 웨이퍼 다이싱
US9632320B2 (en) Laser irradiation device
KR20140004017A (ko) 레이저 다이싱 방법
TW201210732A (en) Laser processing method
JP2013048207A (ja) レーザダイシング方法
CN104520973A (zh) 加工对象物切断方法
US8767786B2 (en) Laser processing apparatus, laser processing method, and manufacturing method of photovoltaic device
CN104508799B (zh) 加工对象物切断方法
JP7339509B2 (ja) 発光素子の製造方法
US20180062032A1 (en) Light emitting device method of manufacture
CN103842305B (zh) 玻璃基板的激光加工装置
JP2015144180A (ja) Ｌｅｄ素子製造用ウェハとその作製方法、およびｌｅｄ素子
JP6562014B2 (ja) 発光素子の製造方法
KR102921280B1 (ko) 웨이퍼 다이싱 방법 및 시스템
JP2015144177A (ja) Ｌｅｄ素子製造用ウェハとその作製方法、およびｌｅｄ素子
US20260008134A1 (en) Method of manufacturing semiconductor element and semiconductor element
JP6982264B2 (ja) 発光素子の製造方法
WO2026028963A1 (ja) 加工方法及び加工装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210817

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210817

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220809

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220920

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221117

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20230214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230512

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20230523

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230725

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230807

R151 Written notification of patent or utility model registration

Ref document number: 7339509

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151