JP7337868B2 - プラズマ処理装置、およびプラズマ処理方法 - Google Patents
プラズマ処理装置、およびプラズマ処理方法 Download PDFInfo
- Publication number
- JP7337868B2 JP7337868B2 JP2021048078A JP2021048078A JP7337868B2 JP 7337868 B2 JP7337868 B2 JP 7337868B2 JP 2021048078 A JP2021048078 A JP 2021048078A JP 2021048078 A JP2021048078 A JP 2021048078A JP 7337868 B2 JP7337868 B2 JP 7337868B2
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- JP
- Japan
- Prior art keywords
- chamber
- pressure
- gas
- plasma
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Epidemiology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Public Health (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning In General (AREA)
- Treatment Of Fiber Materials (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021048078A JP7337868B2 (ja) | 2021-03-23 | 2021-03-23 | プラズマ処理装置、およびプラズマ処理方法 |
CN202210151147.5A CN115116813A (zh) | 2021-03-23 | 2022-02-15 | 等离子体处理装置、及等离子体处理方法 |
TW111105418A TW202238664A (zh) | 2021-03-23 | 2022-02-15 | 電漿處理裝置、及電漿處理方法 |
KR1020220034071A KR20220132438A (ko) | 2021-03-23 | 2022-03-18 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021048078A JP7337868B2 (ja) | 2021-03-23 | 2021-03-23 | プラズマ処理装置、およびプラズマ処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022147006A JP2022147006A (ja) | 2022-10-06 |
JP7337868B2 true JP7337868B2 (ja) | 2023-09-04 |
Family
ID=83324490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021048078A Active JP7337868B2 (ja) | 2021-03-23 | 2021-03-23 | プラズマ処理装置、およびプラズマ処理方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7337868B2 (zh) |
KR (1) | KR20220132438A (zh) |
CN (1) | CN115116813A (zh) |
TW (1) | TW202238664A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017478A (ja) | 2001-07-05 | 2003-01-17 | Tokyo Electron Ltd | 真空処理装置および真空処理方法 |
JP2005064526A (ja) | 2000-03-29 | 2005-03-10 | Hitachi Kokusai Electric Inc | 半導体製造方法、基板処理方法、及び半導体製造装置 |
JP2009065066A (ja) | 2007-09-10 | 2009-03-26 | Renesas Technology Corp | 半導体装置 |
JP2012074496A (ja) | 2010-09-28 | 2012-04-12 | Hitachi High-Technologies Corp | 真空処理装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3020567B2 (ja) * | 1990-08-20 | 2000-03-15 | アネルバ株式会社 | 真空処理方法 |
JPH06196540A (ja) | 1992-12-25 | 1994-07-15 | Hitachi Ltd | 真空装置 |
-
2021
- 2021-03-23 JP JP2021048078A patent/JP7337868B2/ja active Active
-
2022
- 2022-02-15 CN CN202210151147.5A patent/CN115116813A/zh active Pending
- 2022-02-15 TW TW111105418A patent/TW202238664A/zh unknown
- 2022-03-18 KR KR1020220034071A patent/KR20220132438A/ko unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005064526A (ja) | 2000-03-29 | 2005-03-10 | Hitachi Kokusai Electric Inc | 半導体製造方法、基板処理方法、及び半導体製造装置 |
JP2003017478A (ja) | 2001-07-05 | 2003-01-17 | Tokyo Electron Ltd | 真空処理装置および真空処理方法 |
JP2009065066A (ja) | 2007-09-10 | 2009-03-26 | Renesas Technology Corp | 半導体装置 |
JP2012074496A (ja) | 2010-09-28 | 2012-04-12 | Hitachi High-Technologies Corp | 真空処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TW202238664A (zh) | 2022-10-01 |
KR20220132438A (ko) | 2022-09-30 |
CN115116813A (zh) | 2022-09-27 |
JP2022147006A (ja) | 2022-10-06 |
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