JP7337868B2 - プラズマ処理装置、およびプラズマ処理方法 - Google Patents

プラズマ処理装置、およびプラズマ処理方法 Download PDF

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Publication number
JP7337868B2
JP7337868B2 JP2021048078A JP2021048078A JP7337868B2 JP 7337868 B2 JP7337868 B2 JP 7337868B2 JP 2021048078 A JP2021048078 A JP 2021048078A JP 2021048078 A JP2021048078 A JP 2021048078A JP 7337868 B2 JP7337868 B2 JP 7337868B2
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Japan
Prior art keywords
chamber
pressure
gas
plasma
processed
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JP2021048078A
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English (en)
Japanese (ja)
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JP2022147006A (ja
Inventor
大晃 吉森
慶久 嘉瀬
和輝 中澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2021048078A priority Critical patent/JP7337868B2/ja
Priority to CN202210151147.5A priority patent/CN115116813A/zh
Priority to TW111105418A priority patent/TW202238664A/zh
Priority to KR1020220034071A priority patent/KR20220132438A/ko
Publication of JP2022147006A publication Critical patent/JP2022147006A/ja
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Publication of JP7337868B2 publication Critical patent/JP7337868B2/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32862In situ cleaning of vessels and/or internal parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32752Means for moving the material to be treated for moving the material across the discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32834Exhausting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335Cleaning

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Epidemiology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
  • Treatment Of Fiber Materials (AREA)
JP2021048078A 2021-03-23 2021-03-23 プラズマ処理装置、およびプラズマ処理方法 Active JP7337868B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021048078A JP7337868B2 (ja) 2021-03-23 2021-03-23 プラズマ処理装置、およびプラズマ処理方法
CN202210151147.5A CN115116813A (zh) 2021-03-23 2022-02-15 等离子体处理装置、及等离子体处理方法
TW111105418A TW202238664A (zh) 2021-03-23 2022-02-15 電漿處理裝置、及電漿處理方法
KR1020220034071A KR20220132438A (ko) 2021-03-23 2022-03-18 플라즈마 처리 장치 및 플라즈마 처리 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021048078A JP7337868B2 (ja) 2021-03-23 2021-03-23 プラズマ処理装置、およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2022147006A JP2022147006A (ja) 2022-10-06
JP7337868B2 true JP7337868B2 (ja) 2023-09-04

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JP2021048078A Active JP7337868B2 (ja) 2021-03-23 2021-03-23 プラズマ処理装置、およびプラズマ処理方法

Country Status (4)

Country Link
JP (1) JP7337868B2 (zh)
KR (1) KR20220132438A (zh)
CN (1) CN115116813A (zh)
TW (1) TW202238664A (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017478A (ja) 2001-07-05 2003-01-17 Tokyo Electron Ltd 真空処理装置および真空処理方法
JP2005064526A (ja) 2000-03-29 2005-03-10 Hitachi Kokusai Electric Inc 半導体製造方法、基板処理方法、及び半導体製造装置
JP2009065066A (ja) 2007-09-10 2009-03-26 Renesas Technology Corp 半導体装置
JP2012074496A (ja) 2010-09-28 2012-04-12 Hitachi High-Technologies Corp 真空処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3020567B2 (ja) * 1990-08-20 2000-03-15 アネルバ株式会社 真空処理方法
JPH06196540A (ja) 1992-12-25 1994-07-15 Hitachi Ltd 真空装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064526A (ja) 2000-03-29 2005-03-10 Hitachi Kokusai Electric Inc 半導体製造方法、基板処理方法、及び半導体製造装置
JP2003017478A (ja) 2001-07-05 2003-01-17 Tokyo Electron Ltd 真空処理装置および真空処理方法
JP2009065066A (ja) 2007-09-10 2009-03-26 Renesas Technology Corp 半導体装置
JP2012074496A (ja) 2010-09-28 2012-04-12 Hitachi High-Technologies Corp 真空処理装置

Also Published As

Publication number Publication date
TW202238664A (zh) 2022-10-01
KR20220132438A (ko) 2022-09-30
CN115116813A (zh) 2022-09-27
JP2022147006A (ja) 2022-10-06

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