JP7330972B2 - 半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法 - Google Patents

半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法 Download PDF

Info

Publication number
JP7330972B2
JP7330972B2 JP2020531513A JP2020531513A JP7330972B2 JP 7330972 B2 JP7330972 B2 JP 7330972B2 JP 2020531513 A JP2020531513 A JP 2020531513A JP 2020531513 A JP2020531513 A JP 2020531513A JP 7330972 B2 JP7330972 B2 JP 7330972B2
Authority
JP
Japan
Prior art keywords
acid
cleaning composition
amino
triazole
post
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020531513A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021506131A5 (enExample
JP2021506131A (ja
Inventor
チョン ケ，チー
クリップ，アンドレアス
ピン チョン，イー
テオドルス ヴァレンティヌス ホーグブーム，ヨアネス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of JP2021506131A publication Critical patent/JP2021506131A/ja
Publication of JP2021506131A5 publication Critical patent/JP2021506131A5/ja
Application granted granted Critical
Publication of JP7330972B2 publication Critical patent/JP7330972B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3409—Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Emergency Medicine (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
JP2020531513A 2017-12-08 2018-12-05 半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法 Active JP7330972B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17206097.2 2017-12-08
EP17206097 2017-12-08
PCT/EP2018/083684 WO2019110681A1 (en) 2017-12-08 2018-12-05 Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

Publications (3)

Publication Number Publication Date
JP2021506131A JP2021506131A (ja) 2021-02-18
JP2021506131A5 JP2021506131A5 (enExample) 2021-12-16
JP7330972B2 true JP7330972B2 (ja) 2023-08-22

Family

ID=60654767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020531513A Active JP7330972B2 (ja) 2017-12-08 2018-12-05 半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法

Country Status (8)

Country Link
US (1) US11377624B2 (enExample)
EP (1) EP3720938A1 (enExample)
JP (1) JP7330972B2 (enExample)
KR (1) KR102786662B1 (enExample)
CN (1) CN111465679A (enExample)
IL (1) IL274877B2 (enExample)
TW (1) TWI799476B (enExample)
WO (1) WO2019110681A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019208684A1 (ja) 2018-04-27 2019-10-31 三菱瓦斯化学株式会社 水性組成物及びこれを用いた洗浄方法
KR20220058069A (ko) * 2020-10-30 2022-05-09 주식회사 이엔에프테크놀로지 세정제 조성물 및 이를 이용한 세정방법
KR20220061628A (ko) * 2020-11-06 2022-05-13 주식회사 케이씨텍 연마 입자 용해용 조성물 및 이를 이용한 세정 방법
US20250235900A1 (en) * 2024-01-23 2025-07-24 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317636A (ja) 2004-04-27 2005-11-10 Nec Electronics Corp 洗浄液及び半導体装置の製造方法
JP2006307158A (ja) 2005-02-03 2006-11-09 Air Products & Chemicals Inc 残留物除去のための組成物と方法及びパターン画定方法
JP2010515246A (ja) 2006-12-21 2010-05-06 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残留物を除去するための液体洗浄剤
JP2013533631A (ja) 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残渣を除去するための水性洗浄剤
JP2014084464A (ja) 2012-10-23 2014-05-12 Air Products And Chemicals Inc クリーニング用組成物
JP2015524165A (ja) 2012-05-18 2015-08-20 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 有機残渣除去を改良するための銅エッチングレートの低い水性洗浄溶液
WO2018061582A1 (ja) 2016-09-29 2018-04-05 富士フイルム株式会社 処理液および積層体の処理方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6696222B2 (en) 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
KR20060014388A (ko) 2003-05-02 2006-02-15 이케이씨 테크놀로지, 인코포레이티드 반도체 공정에서의 에칭후 잔류물의 제거 방법
US20090131295A1 (en) * 2007-11-16 2009-05-21 Hua Cui Compositions for Removal of Metal Hard Mask Etching Residues from a Semiconductor Substrate
TWI435932B (zh) * 2007-11-23 2014-05-01 Anji Microelectronics Co Ltd 用以清洗等離子蝕刻殘留物之清洗液
JP5873718B2 (ja) 2008-10-21 2016-03-01 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅の洗浄及び保護配合物
US8114773B2 (en) 2010-07-06 2012-02-14 United Microelectronics Corp. Cleaning solution, cleaning method and damascene process using the same
CN104169801B (zh) * 2012-03-16 2019-12-17 巴斯夫欧洲公司 光致抗蚀剂剥离和清洁组合物、其制备方法及其用途
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
CN116286222A (zh) 2014-05-13 2023-06-23 巴斯夫欧洲公司 Tin拉回和清洁组合物
CN107406810A (zh) * 2015-03-31 2017-11-28 弗萨姆材料美国有限责任公司 清洁制剂
CN111465716B (zh) * 2017-12-08 2025-11-14 巴斯夫欧洲公司 用于在低-k材料、铜和/或钴的层的存在下选择性蚀刻包含铝化合物的层的组合物及方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317636A (ja) 2004-04-27 2005-11-10 Nec Electronics Corp 洗浄液及び半導体装置の製造方法
JP2006307158A (ja) 2005-02-03 2006-11-09 Air Products & Chemicals Inc 残留物除去のための組成物と方法及びパターン画定方法
JP2010515246A (ja) 2006-12-21 2010-05-06 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残留物を除去するための液体洗浄剤
JP2013533631A (ja) 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残渣を除去するための水性洗浄剤
JP2015524165A (ja) 2012-05-18 2015-08-20 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 有機残渣除去を改良するための銅エッチングレートの低い水性洗浄溶液
JP2014084464A (ja) 2012-10-23 2014-05-12 Air Products And Chemicals Inc クリーニング用組成物
WO2018061582A1 (ja) 2016-09-29 2018-04-05 富士フイルム株式会社 処理液および積層体の処理方法

Also Published As

Publication number Publication date
EP3720938A1 (en) 2020-10-14
TW201925447A (zh) 2019-07-01
IL274877B1 (en) 2023-11-01
IL274877B2 (en) 2024-03-01
TWI799476B (zh) 2023-04-21
KR102786662B1 (ko) 2025-03-25
US11377624B2 (en) 2022-07-05
WO2019110681A1 (en) 2019-06-13
IL274877A (en) 2020-07-30
KR20200088821A (ko) 2020-07-23
CN111465679A (zh) 2020-07-28
JP2021506131A (ja) 2021-02-18
US20210301221A1 (en) 2021-09-30

Similar Documents

Publication Publication Date Title
US7674755B2 (en) Formulation for removal of photoresist, etch residue and BARC
JP4755060B2 (ja) 残留物を除去するための水性洗浄組成物及びそれを使用する方法
CN101187789B (zh) 去除光致抗蚀剂、蚀刻残余物和barc的配制料
JP4819429B2 (ja) 残留物を除去するための組成物及び方法
US20090131295A1 (en) Compositions for Removal of Metal Hard Mask Etching Residues from a Semiconductor Substrate
JP7330972B2 (ja) 半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法
EP1610185A2 (en) Composition and method using same for removing residue from a substrate
CN1938412A (zh) 剥离抗蚀剂、barc和填隙材料的化学制剂及方法
TWI434149B (zh) 洗淨用組成物、半導體元件之製法
JP2006011297A (ja) フォトレジスト残渣及びポリマー残渣除去組成物
EP3599633B1 (en) Post etch residue cleaning compositions and methods of using the same
TWI500760B (zh) 以酸，有機溶劑為主之多用途微電子清潔組合物
CN111936936B (zh) 用于去除灰化后残留物和/或用于氧化蚀刻含TiN层料或掩模的含咪唑烷硫酮组合物
EP1965418A1 (en) Formulation for removal of photoresist, etch residue and barc
HK1149524A (en) Compositions for removal of metal hard mask etching residues from a semiconductor substrate

Legal Events

Date Code Title Description
A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20211108

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211108

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20221219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221227

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230315

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230711

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230809

R150 Certificate of patent or registration of utility model

Ref document number: 7330972

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150