TWI799476B - 用於從半導體基板及對應製程中移除蝕刻後或灰化後殘餘物之清潔組成物 - Google Patents

用於從半導體基板及對應製程中移除蝕刻後或灰化後殘餘物之清潔組成物 Download PDF

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Publication number
TWI799476B
TWI799476B TW107144121A TW107144121A TWI799476B TW I799476 B TWI799476 B TW I799476B TW 107144121 A TW107144121 A TW 107144121A TW 107144121 A TW107144121 A TW 107144121A TW I799476 B TWI799476 B TW I799476B
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TW
Taiwan
Prior art keywords
post
etch
semiconductor substrate
manufacturing process
cleaning composition
Prior art date
Application number
TW107144121A
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English (en)
Chinese (zh)
Other versions
TW201925447A (zh
Inventor
柯志正
安卓亞斯 克里普
鄭怡萍
喬恩尼司 席爾多瑞絲 維李恩提納斯 胡格布曼
Original Assignee
德商巴斯夫歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商巴斯夫歐洲公司 filed Critical 德商巴斯夫歐洲公司
Publication of TW201925447A publication Critical patent/TW201925447A/zh
Application granted granted Critical
Publication of TWI799476B publication Critical patent/TWI799476B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3409—Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Emergency Medicine (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
TW107144121A 2017-12-08 2018-12-07 用於從半導體基板及對應製程中移除蝕刻後或灰化後殘餘物之清潔組成物 TWI799476B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??17206097.2 2017-12-08
EP17206097.2 2017-12-08
EP17206097 2017-12-08

Publications (2)

Publication Number Publication Date
TW201925447A TW201925447A (zh) 2019-07-01
TWI799476B true TWI799476B (zh) 2023-04-21

Family

ID=60654767

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107144121A TWI799476B (zh) 2017-12-08 2018-12-07 用於從半導體基板及對應製程中移除蝕刻後或灰化後殘餘物之清潔組成物

Country Status (8)

Country Link
US (1) US11377624B2 (enExample)
EP (1) EP3720938A1 (enExample)
JP (1) JP7330972B2 (enExample)
KR (1) KR102786662B1 (enExample)
CN (1) CN111465679A (enExample)
IL (1) IL274877B2 (enExample)
TW (1) TWI799476B (enExample)
WO (1) WO2019110681A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019208684A1 (ja) 2018-04-27 2019-10-31 三菱瓦斯化学株式会社 水性組成物及びこれを用いた洗浄方法
KR20220058069A (ko) * 2020-10-30 2022-05-09 주식회사 이엔에프테크놀로지 세정제 조성물 및 이를 이용한 세정방법
KR20220061628A (ko) * 2020-11-06 2022-05-13 주식회사 케이씨텍 연마 입자 용해용 조성물 및 이를 이용한 세정 방법
US20250235900A1 (en) * 2024-01-23 2025-07-24 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal

Citations (4)

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TW200923076A (en) * 2007-11-23 2009-06-01 Anji Microelectronics Co Ltd Cleaning solution for plasma etch residue removal
US20100163788A1 (en) * 2006-12-21 2010-07-01 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
US20150307818A1 (en) * 2010-07-16 2015-10-29 Advanced Technology Materials, Inc. Aqueous cleaner for the removal of post-etch residues
CN113214920A (zh) * 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂

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US6696222B2 (en) 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
KR20060014388A (ko) 2003-05-02 2006-02-15 이케이씨 테크놀로지, 인코포레이티드 반도체 공정에서의 에칭후 잔류물의 제거 방법
JP4390616B2 (ja) 2004-04-27 2009-12-24 Ｎｅｃエレクトロニクス株式会社 洗浄液及び半導体装置の製造方法
US7888302B2 (en) 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US20090131295A1 (en) * 2007-11-16 2009-05-21 Hua Cui Compositions for Removal of Metal Hard Mask Etching Residues from a Semiconductor Substrate
JP5873718B2 (ja) 2008-10-21 2016-03-01 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅の洗浄及び保護配合物
US8114773B2 (en) 2010-07-06 2012-02-14 United Microelectronics Corp. Cleaning solution, cleaning method and damascene process using the same
CN104169801B (zh) * 2012-03-16 2019-12-17 巴斯夫欧洲公司 光致抗蚀剂剥离和清洁组合物、其制备方法及其用途
EP2850651A4 (en) 2012-05-18 2016-03-09 Entegris Inc AQUEOUS CLEANING SOLUTION HAVING LOW COPPER ATTACK SPEED FOR MORE EFFICIENT REMOVAL OF ORGANIC RESIDUES
US9536730B2 (en) 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
CN116286222A (zh) 2014-05-13 2023-06-23 巴斯夫欧洲公司 Tin拉回和清洁组合物
JP6970675B2 (ja) * 2016-09-29 2021-11-24 富士フイルム株式会社 処理液および積層体の処理方法
CN111465716B (zh) * 2017-12-08 2025-11-14 巴斯夫欧洲公司 用于在低-k材料、铜和/或钴的层的存在下选择性蚀刻包含铝化合物的层的组合物及方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100163788A1 (en) * 2006-12-21 2010-07-01 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
TW200923076A (en) * 2007-11-23 2009-06-01 Anji Microelectronics Co Ltd Cleaning solution for plasma etch residue removal
US20150307818A1 (en) * 2010-07-16 2015-10-29 Advanced Technology Materials, Inc. Aqueous cleaner for the removal of post-etch residues
CN113214920A (zh) * 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂

Also Published As

Publication number Publication date
EP3720938A1 (en) 2020-10-14
TW201925447A (zh) 2019-07-01
IL274877B1 (en) 2023-11-01
IL274877B2 (en) 2024-03-01
KR102786662B1 (ko) 2025-03-25
US11377624B2 (en) 2022-07-05
WO2019110681A1 (en) 2019-06-13
IL274877A (en) 2020-07-30
KR20200088821A (ko) 2020-07-23
CN111465679A (zh) 2020-07-28
JP7330972B2 (ja) 2023-08-22
JP2021506131A (ja) 2021-02-18
US20210301221A1 (en) 2021-09-30

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