JP7317320B2 - 自己組織化単分子膜コーティングを使用することによる金属汚染の防止のための方法及びシステム - Google Patents
自己組織化単分子膜コーティングを使用することによる金属汚染の防止のための方法及びシステム Download PDFInfo
- Publication number
- JP7317320B2 JP7317320B2 JP2021512227A JP2021512227A JP7317320B2 JP 7317320 B2 JP7317320 B2 JP 7317320B2 JP 2021512227 A JP2021512227 A JP 2021512227A JP 2021512227 A JP2021512227 A JP 2021512227A JP 7317320 B2 JP7317320 B2 JP 7317320B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- front surface
- edge
- depositing
- perimeter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/165—Monolayers, e.g. Langmuir-Blodgett
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
- B05D1/322—Removable films used as masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
- B05D5/083—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface involving the use of fluoropolymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B17/00—Methods preventing fouling
- B08B17/02—Preventing deposition of fouling or of dust
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Formation Of Insulating Films (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Saccharide Compounds (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862726605P | 2018-09-04 | 2018-09-04 | |
| US62/726,605 | 2018-09-04 | ||
| PCT/US2019/049508 WO2020086164A2 (en) | 2018-09-04 | 2019-09-04 | Method and system for prevention of metal contamination by using a self-assembled monolayer coating |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021535616A JP2021535616A (ja) | 2021-12-16 |
| JP2021535616A5 JP2021535616A5 (cg-RX-API-DMAC7.html) | 2022-09-06 |
| JP7317320B2 true JP7317320B2 (ja) | 2023-07-31 |
Family
ID=69641094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021512227A Active JP7317320B2 (ja) | 2018-09-04 | 2019-09-04 | 自己組織化単分子膜コーティングを使用することによる金属汚染の防止のための方法及びシステム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11460775B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP7317320B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR102798427B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN112638547A (cg-RX-API-DMAC7.html) |
| TW (1) | TWI810357B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2020086164A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12087580B2 (en) * | 2021-08-30 | 2024-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor devices |
| US12094716B2 (en) | 2021-09-13 | 2024-09-17 | Applied Materials, Inc. | Chambers and coatings for reducing backside damage |
| US12288698B2 (en) * | 2023-02-21 | 2025-04-29 | Tokyo Electron Limited | Methods for retaining a processing liquid on a surface of a semiconductor substrate |
| US12506019B2 (en) | 2024-03-11 | 2025-12-23 | Tokyo Electron Limited | Wafer chuck designs and methods for retaining a processing liquid on a surface of a semiconductor wafer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040157471A1 (en) | 1999-08-11 | 2004-08-12 | Micron Technology, Inc. | Method for pretreating a substrate prior to application of a polymeric coat |
| JP2006212476A (ja) | 2005-02-01 | 2006-08-17 | Seiko Epson Corp | 膜パターン形成方法、膜パターン、レジスト膜、及び絶縁膜、並びに回路基板、半導体装置、表面弾性波デバイス、表面弾性波発振装置、電気光学装置、及び電子機器 |
| JP2013520028A (ja) | 2010-02-17 | 2013-05-30 | エーエスエム アメリカ インコーポレイテッド | 蒸着に対する反応部位の不活性化 |
| JP2014157941A (ja) | 2013-02-15 | 2014-08-28 | Fujikura Ltd | 有機薄膜トランジスタ及びその製造方法 |
| JP2019532489A (ja) | 2016-08-12 | 2019-11-07 | インプリア・コーポレイションInpria Corporation | 金属含有レジストからのエッジビード領域における金属残留物を低減する方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7601386B2 (en) * | 2003-07-11 | 2009-10-13 | Seiko Epson Corporation | Process for forming a film, process for manufacturing a device, electro-optical device and electronic equipment |
| US7854873B2 (en) * | 2005-06-10 | 2010-12-21 | Obducat Ab | Imprint stamp comprising cyclic olefin copolymer |
| KR100994920B1 (ko) | 2008-06-05 | 2010-11-17 | 주식회사 소로나 | 기상 자기조립 단분자막 코팅장치 |
| US8691331B2 (en) | 2009-02-09 | 2014-04-08 | Prashant D. Santan | Surface modification of hydrophobic and/or oleophobic coatings |
| US9078956B2 (en) * | 2010-06-10 | 2015-07-14 | Econous Systems Inc. | Modification of biomedical polymers for prevention of fouling and clotting |
| JP6552009B2 (ja) | 2013-12-17 | 2019-07-31 | 東京エレクトロン株式会社 | 基板への周期的オルガノシリケートまたは自己組織化モノレイヤのスピンオンコーティングのためのシステムおよび方法 |
| JP6439766B2 (ja) * | 2016-09-23 | 2018-12-19 | 東京エレクトロン株式会社 | 塗布、現像方法及び塗布、現像装置 |
-
2019
- 2019-09-04 US US16/560,776 patent/US11460775B2/en active Active
- 2019-09-04 TW TW108131862A patent/TWI810357B/zh active
- 2019-09-04 KR KR1020217009302A patent/KR102798427B1/ko active Active
- 2019-09-04 JP JP2021512227A patent/JP7317320B2/ja active Active
- 2019-09-04 WO PCT/US2019/049508 patent/WO2020086164A2/en not_active Ceased
- 2019-09-04 CN CN201980056372.7A patent/CN112638547A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040157471A1 (en) | 1999-08-11 | 2004-08-12 | Micron Technology, Inc. | Method for pretreating a substrate prior to application of a polymeric coat |
| JP2006212476A (ja) | 2005-02-01 | 2006-08-17 | Seiko Epson Corp | 膜パターン形成方法、膜パターン、レジスト膜、及び絶縁膜、並びに回路基板、半導体装置、表面弾性波デバイス、表面弾性波発振装置、電気光学装置、及び電子機器 |
| JP2013520028A (ja) | 2010-02-17 | 2013-05-30 | エーエスエム アメリカ インコーポレイテッド | 蒸着に対する反応部位の不活性化 |
| JP2014157941A (ja) | 2013-02-15 | 2014-08-28 | Fujikura Ltd | 有機薄膜トランジスタ及びその製造方法 |
| JP2019532489A (ja) | 2016-08-12 | 2019-11-07 | インプリア・コーポレイションInpria Corporation | 金属含有レジストからのエッジビード領域における金属残留物を低減する方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210041094A (ko) | 2021-04-14 |
| TW202025242A (zh) | 2020-07-01 |
| CN112638547A (zh) | 2021-04-09 |
| TWI810357B (zh) | 2023-08-01 |
| JP2021535616A (ja) | 2021-12-16 |
| US20200073244A1 (en) | 2020-03-05 |
| US11460775B2 (en) | 2022-10-04 |
| WO2020086164A3 (en) | 2020-06-18 |
| KR102798427B1 (ko) | 2025-04-23 |
| WO2020086164A2 (en) | 2020-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102798427B1 (ko) | 자기 조립 단분자층 코팅을 사용함으로써 금속 오염을 방지하기 위한 방법 및 시스템 | |
| US6666917B2 (en) | Apparatus for coating of a semiconductor wafer | |
| TWI784176B (zh) | 用以增進極紫外光(euv)蝕刻抗性的保護性覆蓋物之選擇性原子層沉積(ald) | |
| US20100112236A1 (en) | Facilitating Adhesion Between Substrate and Patterned Layer | |
| JP7471054B2 (ja) | 耐プラズマ皮膜塗布のために表面を選択的にパターニングする方法 | |
| JP6303008B2 (ja) | 異なる波長の二つ以上の紫外光源を用いて基板を処理するシステム | |
| JP7627432B2 (ja) | 犠牲キャッピング層としての自己組織化単分子層 | |
| KR102095084B1 (ko) | 자외선 처리를 이용하여 금속 하드마스크의 제거를 강화시키는 시스템 및 방법 | |
| JP2024523510A (ja) | 自己組織化単分子層を使用する選択的な膜形成 | |
| CN112997292B (zh) | 抑制晶圆上的缺陷、金属颗粒污染和膜生长的系统和方法 | |
| JP5782460B2 (ja) | 材料除去及びパターン転写の方法及びシステム | |
| JP2004074608A (ja) | 樹脂版およびその製造方法 | |
| CN1729430A (zh) | 阻质层涂覆方法、粘性材料的使用、粘性材料及阻质层 | |
| CN106057653B (zh) | 半导体装置的制造方法 | |
| US7681519B2 (en) | Apparatus for coating a photoresist layer | |
| CN114709131A (zh) | 一种半导体金属剥离工艺中的角度控制方法 | |
| KR100744277B1 (ko) | 웨이퍼의 에지 비드 제거장치 | |
| JP2001345293A5 (cg-RX-API-DMAC7.html) | ||
| US6777379B2 (en) | Cleaning solution and method of cleaning anti-reflective coating composition using the same | |
| WO2025080341A1 (en) | Selective passivation of photoresists | |
| JP2026509340A (ja) | 半導体基板の表面に処理液を保持するための方法 | |
| JP2000049163A (ja) | 配線の形成方法 | |
| KR20180001149A (ko) | 자기조합단층박막 및 원자층 증착 공정을 이용한 유연기판 패턴 형성 방법 및 이를 수행하기 위한 패턴 형성장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220728 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220829 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230627 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20230710 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230710 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7317320 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |