JP7316302B2 - 様々な絶縁ゲート酸化物を備えた分割ゲートフラッシュメモリセル及びその形成方法 - Google Patents
様々な絶縁ゲート酸化物を備えた分割ゲートフラッシュメモリセル及びその形成方法 Download PDFInfo
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- JP7316302B2 JP7316302B2 JP2020562590A JP2020562590A JP7316302B2 JP 7316302 B2 JP7316302 B2 JP 7316302B2 JP 2020562590 A JP2020562590 A JP 2020562590A JP 2020562590 A JP2020562590 A JP 2020562590A JP 7316302 B2 JP7316302 B2 JP 7316302B2
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- 238000000034 method Methods 0.000 title claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 73
- 229920005591 polysilicon Polymers 0.000 claims description 73
- 125000006850 spacer group Chemical group 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 34
- 150000004767 nitrides Chemical class 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000011810 insulating material Substances 0.000 claims description 11
- 238000013459 approach Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 77
- 239000000463 material Substances 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 230000008021 deposition Effects 0.000 description 9
- 239000007943 implant Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
本出願は、2018年5月9日出願の米国特許仮出願第62/669,263号及び2018年8月7日出願の米国特許出願第16/057,750号の利益を主張するものである。
半導体基板に、第1の厚さを有する第1の絶縁層を形成するステップと、
第1の絶縁層に第1のポリシリコン層を形成するステップと、
第1のポリシリコン層に、第1の離間した絶縁スペーサ及び第2の離間した絶縁スペーサを形成するステップと、
第1のポリシリコン層の第1のブロックが第1の絶縁スペーサの下に留まり、第1のポリシリコン層の第2のブロックが第2の絶縁スペーサの下に留まるように、第1のポリシリコン層の一部を除去するステップであって、第1のポリシリコン層の第1のブロック及び第2のブロックのそれぞれは、鋭角縁部で終端する傾斜上面を有する、除去するステップと、
第1のポリシリコン層の第1のブロックと第2のブロックとの間の間隙の下に配設されるソース領域を基板内に形成するステップと、
ソース領域の上方の半導体基板に第2の厚さを有する第2の絶縁層を形成するステップと、
反対側を向いた、第1のポリシリコン層の第1のブロック及び第2のブロックの側面に隣接して、半導体基板に第3の厚さを有する第3の絶縁層を形成するステップと、
基板、第1の絶縁スペーサ、及び第2の絶縁スペーサ上方に第2のポリシリコン層を形成するステップと、
第2のポリシリコン層の第1のブロックは、第2の絶縁層に、かつ第1の絶縁スペーサと第2の絶縁スペーサとの間に配設されたままであり、第2のポリシリコン層の第2のブロック及び第3のブロックは、第3の絶縁層に配設されたままであるように、第2のポリシリコン層の一部を除去するステップであって、第1の絶縁スペーサは、第2のポリシリコン層の第1のブロックと第2のブロックとの間に配設され、第2の絶縁スペーサは、第2のポリシリコン層の第1のブロックと第3のブロックとの間に配設される、除去するステップと、
第2のポリシリコン層の第2のブロックに隣接して、基板内に第1のドレイン領域を形成するステップと、
第2のポリシリコン層の第3のブロックに隣接して、基板内に第2のドレイン領域を形成するステップと、を含み、
第2のポリシリコン層の第1のブロックは、第1のポリシリコン層の第1のブロックの鋭角縁部に巻き付き、第1のポリシリコン層の第1のブロックの鋭角縁部から絶縁される第1のノッチと、第1のポリシリコン層の第2のブロックの鋭角縁部に巻き付き、第1のポリシリコン層の第2のブロックの鋭角縁部から絶縁される第2のノッチと、を含み、
第2の厚さは1の厚さよりも大きく、第1の厚さは第3の厚さよりも大きい。
Claims (8)
- メモリデバイスを形成する方法であって、該方法は、
半導体基板に、第1の厚さを有する第1の絶縁層を形成するステップと、
前記第1の絶縁層に第1のポリシリコン層を形成するステップと、
前記第1のポリシリコン層に、第1の絶縁スペーサ及び第2の絶縁スペーサを形成するステップであって、前記第1の絶縁スペーサ及び前記第2の絶縁スペーサは互いに離間している、形成するステップと、
前記第1のポリシリコン層の第1のブロックが前記第1の絶縁スペーサの下に留まり、前記第1のポリシリコン層の第2のブロックが前記第2の絶縁スペーサの下に留まるように、前記第1のポリシリコン層の一部を除去するステップであって、前記第1のポリシリコン層の前記第1のブロック及び前記第2のブロックのそれぞれは、鋭角縁部で終端する傾斜上面を有する、除去するステップと、
前記第1のポリシリコン層の前記第1のブロックと前記第2のブロックとの間の間隙の下に配設されるソース領域を前記半導体基板内に形成するステップと、
前記ソース領域の上方の前記半導体基板に第2の厚さを有する第2の絶縁層を形成するステップと、
反対側を向いた、前記第1のポリシリコン層の前記第1のブロック及び前記第2のブロックの側面に隣接して、前記半導体基板に第3の厚さを有する第3の絶縁層を形成するステップと、
前記半導体基板、前記第1の絶縁スペーサ、及び前記第2の絶縁スペーサ上方に第2のポリシリコン層を形成するステップと、
前記第2のポリシリコン層の第1のブロックは、前記第2の絶縁層に、かつ前記第1の絶縁スペーサと前記第2の絶縁スペーサとの間に配設されたままであり、前記第2のポリシリコン層の第2のブロック及び第3のブロックは、前記第3の絶縁層に配設されたままであるように、前記第2のポリシリコン層の一部を除去するステップであって、前記第1の絶縁スペーサは、前記第2のポリシリコン層の前記第1のブロックと前記第2のブロックとの間に配設され、前記第2の絶縁スペーサは、前記第2のポリシリコン層の前記第1のブロックと前記第3のブロックとの間に配設される、除去するステップと、
前記第2のポリシリコン層の前記第2のブロックに隣接して、前記半導体基板内に第1のドレイン領域を形成するステップと、
前記第2のポリシリコン層の前記第3のブロックに隣接して、前記半導体基板内に第2のドレイン領域を形成するステップと、を含み、
前記第2のポリシリコン層の前記第1のブロックは、前記第1のポリシリコン層の前記第1のブロックの前記鋭角縁部に巻き付き、前記第1のポリシリコン層の前記第1のブロックの前記鋭角縁部から絶縁される第1のノッチと、前記第1のポリシリコン層の前記第2のブロックの前記鋭角縁部に巻き付き、前記第1のポリシリコン層の前記第2のブロックの前記鋭角縁部から絶縁される第2のノッチと、を含み、
前記第2の厚さは第1の厚さよりも大きく、前記第1の厚さは前記第3の厚さよりも大きい、方法。 - 前記第2のポリシリコン層の前記第1のブロック、前記第2のブロック、及び前記第3のブロックの上面にサリサイドを形成するステップを更に含む、請求項1に記載の方法。
- 前記第1の絶縁スペーサ及び前記第2の絶縁スペーサを形成するステップは、
前記第1のポリシリコン層に窒化物のブロックを形成することと、
前記窒化物のブロック及び前記第1のポリシリコン層に酸化物を形成することと、
酸化物エッチングを実行して、前記窒化物のブロックの側面に当接する前記酸化物の前記第1の絶縁スペーサ及び前記第2の絶縁スペーサを除く、前記酸化物の一部を除去することと、
前記窒化物のブロックを除去することと、を含む、請求項1に記載の方法。 - 前記第1のポリシリコン層の前記第1のブロック及び前記第2のブロックの前記傾斜上面は、
前記第1のポリシリコン層に窒化物のブロックを形成すること、及び
前記第1のポリシリコン層の前記傾斜上面が前記窒化物のブロックの側壁に近づくにつれて上向きに傾斜するように、前記第1のポリシリコン層の前記傾斜上面でポリエッチングを実行すること、によって形成される、請求項3に記載の方法。 - 前記第2のポリシリコン層の前記一部を除去するステップは、前記絶縁スペーサの頂部も除去する化学機械研磨を含む、請求項1に記載の方法。
- 前記第2のポリシリコン層の前記一部を除去するステップは、前記第2のポリシリコン層のフォトリソグラフィーエッチングを含む、請求項5に記載の方法。
- 前記第1の絶縁層は酸化物であり、
前記第2の絶縁層は酸化物であり、
前記第3の絶縁層は酸化物である、請求項1に記載の方法。 - 前記第2のポリシリコン層の前記第1のブロックの前記第1のノッチ及び前記第2のノッチは、第4の厚さを有する絶縁材料によって、前記第1のポリシリコン層の前記第1のブロック及び前記第2のブロックからそれぞれ絶縁されており、
前記第3の厚さは、前記第4の厚さよりも小さい、請求項1に記載の方法。
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