JP6367491B2 - 金属改良ゲートを有するスプリットゲート不揮発性フラッシュメモリセル及びその製造方法 - Google Patents
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- JP6367491B2 JP6367491B2 JP2017535794A JP2017535794A JP6367491B2 JP 6367491 B2 JP6367491 B2 JP 6367491B2 JP 2017535794 A JP2017535794 A JP 2017535794A JP 2017535794 A JP2017535794 A JP 2017535794A JP 6367491 B2 JP6367491 B2 JP 6367491B2
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- 239000002184 metal Substances 0.000 title description 10
- 229910052751 metal Inorganic materials 0.000 title description 10
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 230000006870 function Effects 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 55
- 230000015572 biosynthetic process Effects 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 238000005530 etching Methods 0.000 description 10
- 125000006850 spacer group Chemical group 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000000137 annealing Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
Claims (4)
- 不揮発性メモリセルを形成する方法であって、
第1の導電型の基板内に、第2の導電型の、離間された第1の領域及び第2の領域を形成することであって、それらの間にチャネル領域を画定する、ことと、
前記第1の領域に隣接している、前記チャネル領域の第1の部分の上方に配置されてそれから絶縁された浮遊ゲートを形成することと、
前記浮遊ゲートの上方に配置されてそれから絶縁された制御ゲートを形成することと、 前記第2の領域に隣接している、前記チャネル領域の第2の部分の上方にそれから絶縁された選択ゲートを形成することであって、前記選択ゲートは、
ポリシリコン材料のブロックと、
前記ポリシリコン材料のブロックの底面及び側面に沿って延在する仕事関数金属材料の層と、を備え、
前記選択ゲートは、二酸化ケイ素の層及び高K絶縁材料の層によって前記チャネル領域の前記第2の部分から絶縁されている、選択ゲートと、
前記第1の領域の上方に配置されてそれから絶縁され、そして前記浮遊ゲートに横方向に隣接して配置されてそれから絶縁された消去ゲートを形成することと、を含み、
前記選択ゲートを形成すること及び前記消去ゲートを形成することは、
前記チャネル領域の第2の部分の上方に配置された部分と、前記第1の領域の上方に配置された部分と、前記浮遊ゲートの側部に横方向に隣接して配置された部分と、前記制御ゲートの側部に横方向に隣接して配置された部分とを有する前記高K絶縁材料の層を形成することと、
前記チャネル領域の第2の部分の上方に配置された部分と、前記第1の領域の上方に配置された部分と、前記浮遊ゲートの側部に横方向に隣接して配置された部分と、前記制御ゲートの側部に横方向に隣接して配置された部分とを有する前記仕事関数金属材料の層を形成することと、
前記第1の領域の上方に配置された前記仕事関数金属材料の層の前記部分と、前記第1の領域に隣接する前記浮遊ゲートの側部の1つに横方向に隣接して配置された前記仕事関数金属材料の層の前記部分と、前記第1の領域に隣接する前記制御ゲートの側部の1つに横方向に隣接して配置された前記仕事関数金属材料の層の前記部分とを除去することと、
前記第1の領域の上方に配置された前記高K絶縁材料の層の前記部分と、前記第1の領域に隣接する前記浮遊ゲートの側部の1つに横方向に隣接して配置された前記高K絶縁材料の層の前記部分と、前記第1の領域に隣接する前記制御ゲートの側部の1つに横方向に隣接して配置された前記高K絶縁材料の層の前記部分とを除去することと、を含む、方法。 - 前記高K絶縁材料は、HfO2、ZrO2、及びTiO2のうちの少なくとも1つである、請求項1に記載の方法。
- ケイ化物を前記ポリシリコン材料のブロックの上面に形成することと、
ケイ化物を前記ポリシリコン材料の第2のブロックの上面に形成することと、を更に含む、請求項1に記載の方法。 - ケイ化物を前記第2の領域にある前記基板の一部分上に形成することを更に含む、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/589,656 | 2015-01-05 | ||
US14/589,656 US9276006B1 (en) | 2015-01-05 | 2015-01-05 | Split gate non-volatile flash memory cell having metal-enhanced gates and method of making same |
PCT/US2015/059443 WO2016111742A1 (en) | 2015-01-05 | 2015-11-06 | Split gate non-volatile flash memory cell having metal-enhanced gates and method of making same |
Publications (2)
Publication Number | Publication Date |
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JP2018501662A JP2018501662A (ja) | 2018-01-18 |
JP6367491B2 true JP6367491B2 (ja) | 2018-08-01 |
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Application Number | Title | Priority Date | Filing Date |
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JP2017535794A Active JP6367491B2 (ja) | 2015-01-05 | 2015-11-06 | 金属改良ゲートを有するスプリットゲート不揮発性フラッシュメモリセル及びその製造方法 |
Country Status (7)
Country | Link |
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US (1) | US9276006B1 (ja) |
EP (1) | EP3243219B1 (ja) |
JP (1) | JP6367491B2 (ja) |
KR (1) | KR20170093257A (ja) |
CN (1) | CN107210303A (ja) |
TW (1) | TWI562338B (ja) |
WO (1) | WO2016111742A1 (ja) |
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US9793281B2 (en) | 2015-07-21 | 2017-10-17 | Silicon Storage Technology, Inc. | Non-volatile split gate memory cells with integrated high K metal gate logic device and metal-free erase gate, and method of making same |
US9634019B1 (en) | 2015-10-01 | 2017-04-25 | Silicon Storage Technology, Inc. | Non-volatile split gate memory cells with integrated high K metal gate, and method of making same |
US9634020B1 (en) * | 2015-10-07 | 2017-04-25 | Silicon Storage Technology, Inc. | Method of making embedded memory device with silicon-on-insulator substrate |
US9673208B2 (en) | 2015-10-12 | 2017-06-06 | Silicon Storage Technology, Inc. | Method of forming memory array and logic devices |
US9634017B1 (en) * | 2015-12-04 | 2017-04-25 | Globalfoundries Inc. | Semiconductor structure including a nonvolatile memory cell and method for the formation thereof |
CN107305892B (zh) | 2016-04-20 | 2020-10-02 | 硅存储技术公司 | 使用两个多晶硅沉积步骤来形成三栅极非易失性闪存单元对的方法 |
CN107425003B (zh) * | 2016-05-18 | 2020-07-14 | 硅存储技术公司 | 制造分裂栅非易失性闪存单元的方法 |
US9929167B2 (en) | 2016-07-13 | 2018-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10325918B2 (en) | 2016-11-29 | 2019-06-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10943996B2 (en) | 2016-11-29 | 2021-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor device including non-volatile memories and logic devices |
US10283512B2 (en) | 2016-11-29 | 2019-05-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9853039B1 (en) | 2016-12-13 | 2017-12-26 | Cypress Semiconductor Corporation | Split-gate flash cell formed on recessed substrate |
US10269815B2 (en) | 2017-04-27 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10608090B2 (en) * | 2017-10-04 | 2020-03-31 | Silicon Storage Technology, Inc. | Method of manufacturing a split-gate flash memory cell with erase gate |
US10714634B2 (en) | 2017-12-05 | 2020-07-14 | Silicon Storage Technology, Inc. | Non-volatile split gate memory cells with integrated high K metal control gates and method of making same |
US10312247B1 (en) | 2018-03-22 | 2019-06-04 | Silicon Storage Technology, Inc. | Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication |
US10468428B1 (en) * | 2018-04-19 | 2019-11-05 | Silicon Storage Technology, Inc. | Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making same |
US10727240B2 (en) | 2018-07-05 | 2020-07-28 | Silicon Store Technology, Inc. | Split gate non-volatile memory cells with three-dimensional FinFET structure |
CN109103085A (zh) * | 2018-08-06 | 2018-12-28 | 上海华虹宏力半导体制造有限公司 | 闪存及其制造方法 |
US10797142B2 (en) | 2018-12-03 | 2020-10-06 | Silicon Storage Technology, Inc. | FinFET-based split gate non-volatile flash memory with extended source line FinFET, and method of fabrication |
US10937794B2 (en) | 2018-12-03 | 2021-03-02 | Silicon Storage Technology, Inc. | Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making same |
CN110797344B (zh) * | 2019-11-08 | 2022-10-21 | 武汉新芯集成电路制造有限公司 | 一种半导体器件的制造方法 |
US11362100B2 (en) | 2020-03-24 | 2022-06-14 | Silicon Storage Technology, Inc. | FinFET split gate non-volatile memory cells with enhanced floating gate to floating gate capacitive coupling |
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US5242848A (en) | 1990-01-22 | 1993-09-07 | Silicon Storage Technology, Inc. | Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device |
US6747310B2 (en) | 2002-10-07 | 2004-06-08 | Actrans System Inc. | Flash memory cells with separated self-aligned select and erase gates, and process of fabrication |
KR100665186B1 (ko) * | 2004-08-14 | 2007-01-09 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
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US8951864B2 (en) * | 2012-02-13 | 2015-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Split-gate device and method of fabricating the same |
US9093551B2 (en) * | 2012-07-06 | 2015-07-28 | Globalfoundries Singapore Pte. Ltd. | Method and apparatus for embedded NVM utilizing an RMG process |
US9129854B2 (en) | 2012-10-04 | 2015-09-08 | Sandisk Technologies Inc. | Full metal gate replacement process for NAND flash memory |
-
2015
- 2015-01-05 US US14/589,656 patent/US9276006B1/en active Active
- 2015-11-06 EP EP15798284.4A patent/EP3243219B1/en active Active
- 2015-11-06 WO PCT/US2015/059443 patent/WO2016111742A1/en active Application Filing
- 2015-11-06 KR KR1020177021606A patent/KR20170093257A/ko not_active Application Discontinuation
- 2015-11-06 JP JP2017535794A patent/JP6367491B2/ja active Active
- 2015-11-06 CN CN201580072475.4A patent/CN107210303A/zh active Pending
- 2015-11-30 TW TW104139924A patent/TWI562338B/zh active
Also Published As
Publication number | Publication date |
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TW201620117A (zh) | 2016-06-01 |
EP3243219B1 (en) | 2019-06-26 |
US9276006B1 (en) | 2016-03-01 |
KR20170093257A (ko) | 2017-08-14 |
TWI562338B (en) | 2016-12-11 |
EP3243219A1 (en) | 2017-11-15 |
WO2016111742A1 (en) | 2016-07-14 |
CN107210303A (zh) | 2017-09-26 |
JP2018501662A (ja) | 2018-01-18 |
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