JP7304966B2 - 低い屈折率及び低い水蒸気透過率を有する水分バリア膜 - Google Patents
低い屈折率及び低い水蒸気透過率を有する水分バリア膜 Download PDFInfo
- Publication number
- JP7304966B2 JP7304966B2 JP2021562325A JP2021562325A JP7304966B2 JP 7304966 B2 JP7304966 B2 JP 7304966B2 JP 2021562325 A JP2021562325 A JP 2021562325A JP 2021562325 A JP2021562325 A JP 2021562325A JP 7304966 B2 JP7304966 B2 JP 7304966B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- barrier layer
- thin film
- less
- silicon oxynitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004888 barrier function Effects 0.000 title claims description 81
- 230000005540 biological transmission Effects 0.000 title claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims description 46
- 230000006641 stabilisation Effects 0.000 claims description 41
- 238000011105 stabilization Methods 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000005538 encapsulation Methods 0.000 claims description 17
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 5
- 230000000087 stabilizing effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 201
- 239000007789 gas Substances 0.000 description 35
- 239000000758 substrate Substances 0.000 description 29
- 239000010408 film Substances 0.000 description 14
- 238000009413 insulation Methods 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000001678 elastic recoil detection analysis Methods 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229920000052 poly(p-xylylene) Polymers 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241000473391 Archosargus rhomboidalis Species 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000004812 Fluorinated ethylene propylene Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920009441 perflouroethylene propylene Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Formation Of Insulating Films (AREA)
- Liquid Crystal (AREA)
- Chemical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962838883P | 2019-04-25 | 2019-04-25 | |
| US62/838,883 | 2019-04-25 | ||
| PCT/US2019/041163 WO2020219087A1 (en) | 2019-04-25 | 2019-07-10 | Moisture barrier film having low refraction index and low water vapor tramission rate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022530379A JP2022530379A (ja) | 2022-06-29 |
| JP7304966B2 true JP7304966B2 (ja) | 2023-07-07 |
Family
ID=72941218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021562325A Active JP7304966B2 (ja) | 2019-04-25 | 2019-07-10 | 低い屈折率及び低い水蒸気透過率を有する水分バリア膜 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20220209188A1 (zh) |
| JP (1) | JP7304966B2 (zh) |
| KR (1) | KR20210143951A (zh) |
| CN (2) | CN118251042A (zh) |
| TW (2) | TWI754223B (zh) |
| WO (1) | WO2020219087A1 (zh) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011258943A (ja) | 2010-05-14 | 2011-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜の作製方法、およびトランジスタの作製方法 |
| JP2013232279A (ja) | 2010-07-27 | 2013-11-14 | Hitachi Ltd | 封止膜およびそれを用いた有機発光ダイオード |
| US20140256070A1 (en) | 2013-03-11 | 2014-09-11 | Applied Materials, Inc. | Plasma curing of pecvd hmdso film for oled applications |
| JP2015024536A (ja) | 2013-07-25 | 2015-02-05 | コニカミノルタ株式会社 | ガスバリアー性フィルムの製造方法 |
| JP2015228491A (ja) | 2014-05-02 | 2015-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置、タッチセンサ、表示装置 |
| US20170104048A1 (en) | 2015-10-13 | 2017-04-13 | Samsung Display Co., Ltd. | Substrate structure |
| JP6442117B1 (ja) | 2018-01-31 | 2018-12-19 | 堺ディスプレイプロダクト株式会社 | 有機ｅｌ表示装置の製造方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2899600B2 (ja) * | 1994-01-25 | 1999-06-02 | キヤノン販売 株式会社 | 成膜方法 |
| TWI345307B (en) * | 2007-02-16 | 2011-07-11 | Chi Mei El Corp | Display device and method of manufacturing the same |
| TWI348767B (en) * | 2007-12-07 | 2011-09-11 | Chimei Innolux Corp | Thin film transistor and manufacture method thereof |
| CN104115300B (zh) * | 2012-02-15 | 2017-02-22 | 应用材料公司 | 沉积包封膜的方法 |
| US9299956B2 (en) * | 2012-06-13 | 2016-03-29 | Aixtron, Inc. | Method for deposition of high-performance coatings and encapsulated electronic devices |
| TWI487074B (zh) * | 2012-10-22 | 2015-06-01 | Ind Tech Res Inst | 可撓式電子裝置及其製造方法 |
| TWI578592B (zh) * | 2013-03-12 | 2017-04-11 | 應用材料股份有限公司 | 有機發光二極體元件及包括其之封裝結構的沉積方法 |
| JP6198434B2 (ja) * | 2013-04-11 | 2017-09-20 | 株式会社半導体エネルギー研究所 | 表示装置及び電子機器 |
| KR20150033155A (ko) * | 2013-09-23 | 2015-04-01 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
| TWI514564B (zh) * | 2013-12-10 | 2015-12-21 | Au Optronics Corp | 顯示面板及其製作方法 |
| TWI559510B (zh) * | 2014-06-23 | 2016-11-21 | 群創光電股份有限公司 | 顯示裝置 |
| WO2016016156A1 (en) * | 2014-07-31 | 2016-02-04 | Rolic Ag | Encapsulation structure for an oled display incorporating antireflection properties |
| KR20160080994A (ko) * | 2014-12-30 | 2016-07-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| TWI656672B (zh) * | 2015-01-22 | 2019-04-11 | 財團法人工業技術研究院 | 可撓性環境敏感電子元件封裝體 |
| KR102516054B1 (ko) * | 2015-11-13 | 2023-03-31 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 유기발광표시장치의 제조 방법 |
| KR102631535B1 (ko) * | 2016-06-30 | 2024-01-30 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| TWI599078B (zh) * | 2016-08-05 | 2017-09-11 | 行家光電股份有限公司 | 具濕氣阻隔結構之晶片級封裝發光裝置 |
| TWI630742B (zh) * | 2016-09-14 | 2018-07-21 | 財團法人工業技術研究院 | 可撓性有機發光二極體的結構及其製造方法 |
| KR20180047587A (ko) * | 2016-10-31 | 2018-05-10 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| KR20180062293A (ko) * | 2016-11-30 | 2018-06-08 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| WO2018130288A1 (en) * | 2017-01-12 | 2018-07-19 | Applied Materials, Inc. | Barrier layer system and method for manufacturing a barrier layer system in a continuous roll-to-roll process |
| KR102382487B1 (ko) * | 2017-09-15 | 2022-04-01 | 엘지디스플레이 주식회사 | 유기발광 다이오드 표시장치 |
| US20190097175A1 (en) * | 2017-09-28 | 2019-03-28 | Applied Materials, Inc. | Thin film encapsulation scattering layer by pecvd |
-
2019
- 2019-07-10 US US17/604,503 patent/US20220209188A1/en active Pending
- 2019-07-10 CN CN202410415312.2A patent/CN118251042A/zh active Pending
- 2019-07-10 CN CN201980094735.6A patent/CN113841263B/zh active Active
- 2019-07-10 JP JP2021562325A patent/JP7304966B2/ja active Active
- 2019-07-10 KR KR1020217038267A patent/KR20210143951A/ko not_active Application Discontinuation
- 2019-07-10 WO PCT/US2019/041163 patent/WO2020219087A1/en active Application Filing
-
2020
- 2020-02-15 TW TW109104879A patent/TWI754223B/zh active
- 2020-02-15 TW TW110149730A patent/TWI809637B/zh active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011258943A (ja) | 2010-05-14 | 2011-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜の作製方法、およびトランジスタの作製方法 |
| JP2013232279A (ja) | 2010-07-27 | 2013-11-14 | Hitachi Ltd | 封止膜およびそれを用いた有機発光ダイオード |
| US20140256070A1 (en) | 2013-03-11 | 2014-09-11 | Applied Materials, Inc. | Plasma curing of pecvd hmdso film for oled applications |
| JP2015024536A (ja) | 2013-07-25 | 2015-02-05 | コニカミノルタ株式会社 | ガスバリアー性フィルムの製造方法 |
| JP2015228491A (ja) | 2014-05-02 | 2015-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置、タッチセンサ、表示装置 |
| US20170104048A1 (en) | 2015-10-13 | 2017-04-13 | Samsung Display Co., Ltd. | Substrate structure |
| JP6442117B1 (ja) | 2018-01-31 | 2018-12-19 | 堺ディスプレイプロダクト株式会社 | 有機ｅｌ表示装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220209188A1 (en) | 2022-06-30 |
| CN113841263A (zh) | 2021-12-24 |
| WO2020219087A1 (en) | 2020-10-29 |
| JP2022530379A (ja) | 2022-06-29 |
| TWI754223B (zh) | 2022-02-01 |
| KR20210143951A (ko) | 2021-11-29 |
| CN113841263B (zh) | 2024-04-26 |
| TW202040841A (zh) | 2020-11-01 |
| TWI809637B (zh) | 2023-07-21 |
| CN118251042A (zh) | 2024-06-25 |
| TW202232769A (zh) | 2022-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9935183B2 (en) | Multilayer passivation or etch stop TFT | |
| US9269923B2 (en) | Barrier films for thin film encapsulation | |
| US20130330482A1 (en) | Carbon-doped silicon nitride thin film and manufacturing method and device thereof | |
| US11770964B2 (en) | Thin-film encapsulation | |
| KR102616238B1 (ko) | 박막 트랜지스터들을 위한 질소 풍부 실리콘 질화물 막들 | |
| US11118266B2 (en) | Method for depositing protection film of light-emitting element | |
| JP7304966B2 (ja) | 低い屈折率及び低い水蒸気透過率を有する水分バリア膜 | |
| US20190097175A1 (en) | Thin film encapsulation scattering layer by pecvd | |
| US7662683B2 (en) | Method for forming gate dielectric layer | |
| US10777777B2 (en) | Passivation film deposition method for light-emitting diode | |
| US9385239B2 (en) | Buffer layers for metal oxide semiconductors for TFT | |
| US10002711B2 (en) | Low temperature multilayer dielectric film for passivation and capacitor | |
| TWI755823B (zh) | 用以沈積一阻障層之方法及使用其之薄膜封裝結構 | |
| KR20180118958A (ko) | 박막 트랜지스터 및 그 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211216 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230131 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230214 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230512 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230530 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230627 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7304966 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |