JP7301021B2 - 基板処理装置、載置台及び温度制御方法 - Google Patents

基板処理装置、載置台及び温度制御方法 Download PDF

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Publication number
JP7301021B2
JP7301021B2 JP2020081397A JP2020081397A JP7301021B2 JP 7301021 B2 JP7301021 B2 JP 7301021B2 JP 2020081397 A JP2020081397 A JP 2020081397A JP 2020081397 A JP2020081397 A JP 2020081397A JP 7301021 B2 JP7301021 B2 JP 7301021B2
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Japan
Prior art keywords
plate
temperature
temperature control
control mechanism
substrate
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JP2020081397A
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English (en)
Japanese (ja)
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JP2021176172A (ja
JP2021176172A5 (https=
Inventor
秀翔 斉藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2020081397A priority Critical patent/JP7301021B2/ja
Priority to TW114113766A priority patent/TW202531473A/zh
Priority to TW110114121A priority patent/TWI883180B/zh
Priority to KR1020210051048A priority patent/KR20210134503A/ko
Priority to CN202110441064.5A priority patent/CN113594016A/zh
Priority to US17/240,195 priority patent/US11626818B2/en
Publication of JP2021176172A publication Critical patent/JP2021176172A/ja
Publication of JP2021176172A5 publication Critical patent/JP2021176172A5/ja
Priority to JP2023099398A priority patent/JP7613816B2/ja
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F27/00—Control arrangements or safety devices specially adapted for heat-exchange or heat-transfer apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2020081397A 2020-05-01 2020-05-01 基板処理装置、載置台及び温度制御方法 Active JP7301021B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2020081397A JP7301021B2 (ja) 2020-05-01 2020-05-01 基板処理装置、載置台及び温度制御方法
TW110114121A TWI883180B (zh) 2020-05-01 2021-04-20 基板處理裝置及溫度控制方法
KR1020210051048A KR20210134503A (ko) 2020-05-01 2021-04-20 기판 처리 장치, 적재대 및 온도 제어 방법
TW114113766A TW202531473A (zh) 2020-05-01 2021-04-20 基板處理裝置
CN202110441064.5A CN113594016A (zh) 2020-05-01 2021-04-23 基板处理装置、载置台以及温度控制方法
US17/240,195 US11626818B2 (en) 2020-05-01 2021-04-26 Substrate processing apparatus, and temperature control method
JP2023099398A JP7613816B2 (ja) 2020-05-01 2023-06-16 基板処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020081397A JP7301021B2 (ja) 2020-05-01 2020-05-01 基板処理装置、載置台及び温度制御方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023099398A Division JP7613816B2 (ja) 2020-05-01 2023-06-16 基板処理装置

Publications (3)

Publication Number Publication Date
JP2021176172A JP2021176172A (ja) 2021-11-04
JP2021176172A5 JP2021176172A5 (https=) 2023-04-19
JP7301021B2 true JP7301021B2 (ja) 2023-06-30

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JP2020081397A Active JP7301021B2 (ja) 2020-05-01 2020-05-01 基板処理装置、載置台及び温度制御方法
JP2023099398A Active JP7613816B2 (ja) 2020-05-01 2023-06-16 基板処理装置

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JP2023099398A Active JP7613816B2 (ja) 2020-05-01 2023-06-16 基板処理装置

Country Status (5)

Country Link
US (1) US11626818B2 (https=)
JP (2) JP7301021B2 (https=)
KR (1) KR20210134503A (https=)
CN (1) CN113594016A (https=)
TW (2) TW202531473A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12564010B2 (en) * 2021-11-23 2026-02-24 Intel NDTM US LLC Chuck with non-flat shaped surface
US11994807B2 (en) * 2022-05-03 2024-05-28 Tokyo Electron Limited In-situ lithography pattern enhancement with localized stress treatment tuning using heat zones
KR102705998B1 (ko) * 2023-09-05 2024-09-11 주식회사 동탄이엔지 온도 제어가 가능한 정전척 및 이를 이용한 정전척의 온도 제어 방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124299A (ja) 1998-10-16 2000-04-28 Hitachi Ltd 半導体装置の製造方法および半導体製造装置
JP2007317772A (ja) 2006-05-24 2007-12-06 Shinko Electric Ind Co Ltd 静電チャック装置
JP2009218536A (ja) 2008-03-13 2009-09-24 Seiko Epson Corp 基板加熱装置および電気光学装置の製造装置
JP2010182866A (ja) 2009-02-05 2010-08-19 Nikon Corp 静電吸着保持装置、露光装置、露光方法及びデバイスの製造方法
JP2010186917A (ja) 2009-02-13 2010-08-26 Shin-Etsu Chemical Co Ltd 表面の研磨代が均一な半導体ウェーハの製造方法
JP2011159678A (ja) 2010-01-29 2011-08-18 Sumitomo Electric Ind Ltd 静電チャックを備えた基板保持体
US20180122680A1 (en) 2016-10-31 2018-05-03 Samsung Electronics Co., Ltd. Electrostatic chuck assembly and semiconductor manufacturing apparatus including the same
JP2019197830A (ja) 2018-05-10 2019-11-14 東京エレクトロン株式会社 載置台及びプラズマ処理装置

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JPH06302550A (ja) * 1993-04-13 1994-10-28 Hitachi Ltd 半導体製造装置
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
JP2000021962A (ja) 1998-07-03 2000-01-21 Hitachi Ltd 静電吸着装置
JP2002009064A (ja) * 2000-06-21 2002-01-11 Hitachi Ltd 試料の処理装置及び試料の処理方法
JP2003224180A (ja) * 2002-01-28 2003-08-08 Kyocera Corp ウエハ支持部材
JP2005072286A (ja) 2003-08-25 2005-03-17 Kyocera Corp 静電チャック
JP2006237348A (ja) * 2005-02-25 2006-09-07 Ulvac Japan Ltd 静電チャック及びこれを備えた真空処理装置
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
DE102005049598B4 (de) * 2005-10-17 2017-10-19 Att Advanced Temperature Test Systems Gmbh Hybrid Chuck
JP5207996B2 (ja) * 2009-01-20 2013-06-12 東京エレクトロン株式会社 基板載置台及び基板処理装置
JP5496791B2 (ja) * 2010-06-29 2014-05-21 シャープ株式会社 プラズマ処理装置
JP6196095B2 (ja) * 2013-08-07 2017-09-13 日本特殊陶業株式会社 静電チャック
JP2015082384A (ja) * 2013-10-22 2015-04-27 東京エレクトロン株式会社 プラズマ処理装置、給電ユニット、及び載置台システム
US10008404B2 (en) * 2014-10-17 2018-06-26 Applied Materials, Inc. Electrostatic chuck assembly for high temperature processes
JP6655310B2 (ja) * 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6584289B2 (ja) * 2015-11-04 2019-10-02 東京エレクトロン株式会社 基板載置台および基板処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124299A (ja) 1998-10-16 2000-04-28 Hitachi Ltd 半導体装置の製造方法および半導体製造装置
JP2007317772A (ja) 2006-05-24 2007-12-06 Shinko Electric Ind Co Ltd 静電チャック装置
JP2009218536A (ja) 2008-03-13 2009-09-24 Seiko Epson Corp 基板加熱装置および電気光学装置の製造装置
JP2010182866A (ja) 2009-02-05 2010-08-19 Nikon Corp 静電吸着保持装置、露光装置、露光方法及びデバイスの製造方法
JP2010186917A (ja) 2009-02-13 2010-08-26 Shin-Etsu Chemical Co Ltd 表面の研磨代が均一な半導体ウェーハの製造方法
JP2011159678A (ja) 2010-01-29 2011-08-18 Sumitomo Electric Ind Ltd 静電チャックを備えた基板保持体
US20180122680A1 (en) 2016-10-31 2018-05-03 Samsung Electronics Co., Ltd. Electrostatic chuck assembly and semiconductor manufacturing apparatus including the same
JP2019197830A (ja) 2018-05-10 2019-11-14 東京エレクトロン株式会社 載置台及びプラズマ処理装置

Also Published As

Publication number Publication date
JP2021176172A (ja) 2021-11-04
JP2023118762A (ja) 2023-08-25
JP7613816B2 (ja) 2025-01-15
US20210344288A1 (en) 2021-11-04
KR20210134503A (ko) 2021-11-10
CN113594016A (zh) 2021-11-02
TW202531473A (zh) 2025-08-01
TWI883180B (zh) 2025-05-11
TW202147504A (zh) 2021-12-16
US11626818B2 (en) 2023-04-11

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