JP7298195B2 - 光モジュール及びその製造方法 - Google Patents
光モジュール及びその製造方法 Download PDFInfo
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- JP7298195B2 JP7298195B2 JP2019039752A JP2019039752A JP7298195B2 JP 7298195 B2 JP7298195 B2 JP 7298195B2 JP 2019039752 A JP2019039752 A JP 2019039752A JP 2019039752 A JP2019039752 A JP 2019039752A JP 7298195 B2 JP7298195 B2 JP 7298195B2
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- electrode pads
- conductive material
- conductive
- semiconductor chip
- electrode pad
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Description
本発明は、光モジュール及びその製造方法に関する。
コヒーレント用光通信用の光半導体チップには、小型化及び多ピン化が要望されている。そこで、ボールグリッドアレイ（ball grid array：ＢＧＡ）パッケージの光半導体チップが光モジュールに用いられることがある。
しかしながら、従来のＢＧＡパッケージの光半導体チップを用いた光モジュールでは、優れた高周波特性を確保しながら微細化することが困難である。
本開示の目的は、優れた高周波特性を確保しながら微細化することができる光モジュール及びその製造方法を提供することにある。
本開示の一形態によれば、複数の第１の電極パッドと、複数の第２の電極パッドと、前記複数の第１の電極パッドと前記複数の第２の電極パッドとの間に配置された複数の第３の電極パッドと、を備えた光半導体チップと、複数の第４の電極パッドと、複数の第５の電極パッドと、前記複数の第４の電極パッドと前記複数の第５の電極パッドとの間に配置された複数の第６の電極パッドと、備え、前記光半導体チップがフリップチップ実装された配線基板と、それぞれ、前記複数の第１の電極パッドのうちの一つと前記複数の第４の電極パッドのうちの一つとを接続する複数の第１の導電材と、それぞれ、前記複数の第２の電極パッドのうちの一つと前記複数の第５の電極パッドのうちの一つとを接続する複数の第２の導電材と、前記複数の第１の導電材と前記複数の第２の導電材との間に配置された１又は２以上の第３の導電材と、前記光半導体チップと前記配線基板との間で、前記第３の導電材の前記第２の導電材側に設けられた樹脂と、を有し、前記第２の導電材は前記樹脂に接触し、前記第１の導電材は前記樹脂に非接触であり、前記光半導体チップは、前記第３の導電材の前記第１の導電材側に設けられた複数の第７の電極パッドを有し、前記配線基板は、前記第３の導電材の前記第１の導電材側に設けられた複数の第８の電極パッドを有し、前記第３の導電材の前記第１の導電材側に設けられ、それぞれ、前記複数の第７の電極パッドのうちの一つと前記複数の第８の電極パッドのうちの一つとを接続する複数の第４の導電材を有し、前記１又は２以上の第３の導電材の各々は、前記複数の第３の電極パッドと前記複数の第６の電極パッドとを接続し、前記第１の導電材を介して伝送される信号の第１の速度が、前記第２の導電材を介して伝送される信号の第２の速度よりも速く、前記複数の第１の導電材、前記複数の第２の導電材及び前記第４の導電材のうちの同一直線上にない少なくとも３個で、すべてではない導電材はコア材を有し、前記コア材の融点は半田の融点よりも高い光モジュールが提供される。
本開示によれば、優れた高周波特性を確保しながら微細化することができる。
本願発明者らは、優れた高周波特性を確保しながら更に微細化することが困難な理由を明らかにすべく鋭意検討を行った。
光半導体チップの微細化のために、ＢＧＡの半田ボールのピッチは狭められ、直径が小さくされる。直径が小さくなるほど、半田ボールにクラックが生じる応力が小さくなり、接続信頼性が低下しやすくなる。接続信頼性の低下を抑制するためには、光半導体チップと配線基板との間の空間に、アンダーフィルとよばれる液状の樹脂を流し込み、硬化させることが有効である。しかしながら、光半導体チップと配線基板との間の空間がアンダーフィルで充填されると、樹脂の誘電率の影響により、高速信号が伝送される半田ボールに特性インピーダンスの不整合が生じる。この結果、高周波特性が低下してしまう。
以下、実施形態について添付の図面を参照しながら具体的に説明する。なお、本明細書及び図面において、実質的に同一の機能構成を有する構成要素については、同一の符号を付することにより重複した説明を省くことがある。また、本開示においては、Ｘ１－Ｘ２方向、Ｙ１－Ｙ２方向、Ｚ１－Ｚ２方向を相互に直交する方向とする。また、Ｘ１－Ｘ２方向及びＹ１－Ｙ２方向を含む面をＸＹ面と記載し、Ｙ１－Ｙ２方向及びＺ１－Ｚ２方向を含む面をＹＺ面と記載し、Ｚ１－Ｚ２方向及びＸ１－Ｘ２方向を含む面をＺＸ面と記載する。なお、便宜上、Ｚ１－Ｚ２方向を上下方向とする。また、平面視とは、Ｚ１側から対象物を見ることをいう。
（第１の実施形態）
まず、第１の実施形態について説明する。図１は、第１の実施形態に係る光モジュールの構成を示すブロック図である。図１中の実線の矢印は電気信号が伝送される方向を示し、破線は光信号が伝送される方向を示す。
まず、第１の実施形態について説明する。図１は、第１の実施形態に係る光モジュールの構成を示すブロック図である。図１中の実線の矢印は電気信号が伝送される方向を示し、破線は光信号が伝送される方向を示す。
第１の実施形態に係る光モジュール１は、光半導体チップ２００と、デジタルシグナルプロセッサ（digital signal processor：ＤＳＰ）３００と、レーザ４００とを含む。光半導体チップ２００は、集積コヒーレントレシーバ（integrated coherent receiver：ＩＣＲ）２１０と、ドライバ２２０と、変調器Ｉ２３０とを含む。
ＩＣＲ２１０は、光ファイバ５００（図３参照）を通じて光モジュール１に外部から出射された信号光（Rx Opt）とレーザ４００が発した局発光とを入力し、電気信号を出力する。ＤＳＰ３００は、ＩＣＲ２１０が出力した電気信号を入力し、これを処理してデータ信号（Rx Data）を外部に出力する。ＤＳＰ３００は、外部からデータ信号（Tx Data）を入力し、これを処理してドライバ２２０に出力する。ドライバ２２０は、ＤＳＰ３００が出力した信号に基づいて変調器２３０を駆動する。変調器２３０は、ドライバ２２０により駆動さ、レーザ４００が発した局発光を変調して信号光（Tx Opt）を、光ファイバ５００を通して光モジュール１の外部に出射する。
図２は、光半導体チップ２００の構造を示す下面図である。光半導体チップ２００はボールグリッドアレイ（ball grid array：ＢＧＡ）パッケージを有する。図２に示すように、光半導体チップ２００の下面に複数の電極パッド２４０が設けられている。電極パッド２４０は格子状に配置されている。複数の電極パッド２４０の一部は高速信号用の電極パッド２４０Ｈであり、他の一部は接地用の電極パッド２４０Ｇであり、他の一部は低速信号用の電極パッド２４０Ｌである。例えば、光半導体チップ２００の平面形状は長方形であり、電極パッド２４０Ｈは、平面視で、ＤＳＰ３００側（Ｘ１側）に配置される辺の近傍に集中して配置されている。例えば、隣り合う２個の電極パッド２４０Ｈを通じて差動信号が伝送され、差動信号が伝送される２個の電極パッド２４０Ｈを挟むように２個の電極パッド２４０Ｇが配置されている。また、電極パッド２４０が最近接で並ぶ方向において、電極パッド２４０Ｈと電極パッド２４０Ｌとの間には、電極パッド２４０Ｇが配置されている。電極パッド２４０Ｈは第１の電極パッドの一例であり、電極パッド２４０Ｌは第２の電極パッドの一例であり、電極パッド２４０Ｈと電極パッド２４０Ｌとの間に配置された電極パッド２４０Ｇは、第３の電極パッドの一例である。
図３Ａは、第１の実施形態に係る光モジュール１の構造を示す平面図である。図３Ｂは、第１の実施形態に係る光モジュール１の構造を示す断面図である。図３Ｂは、図３Ａ中のＩ－Ｉ線に沿った断面図に相当する。
配線基板１００の上面に複数の電極パッド１２０が、平面視で電極パッド２４０と重なるようにして格子状に配置されている。複数の電極パッド１２０の一部は電極パッド２４０Ｈが電気的に接続される電極パッド１２０Ｈであり、他の一部は電極パッド２４０Ｇが電気的に接続される電極パッド１２０Ｇであり、他の一部は電極パッド２４０Ｌが電気的に接続される電極パッド１２０Ｌである。電極パッド１２０Ｈは第４の電極パッドの一例であり、電極パッド１２０Ｌは第５の電極パッドの一例である。複数の電極パッド１２０Ｇの一部は、電極パッド１２０Ｈと電極パッド１２０Ｌとの間に配置され、第６の電極パッドの一例である。
光半導体チップ２００は配線基板１００にフリップチップ実装されている。１個の電極パッド２４０Ｈは、個々に円柱状の１個の導電材６２０Ｈを介して１個の電極パッド１２０Ｈに電気的、機械的に接続されている。１個の電極パッド２４０Ｌは、個々に円柱状の１個の導電材６２０Ｌを介して１個の電極パッド１２０Ｌに電気的、機械的に接続されている。複数の電極パッド２４０Ｇの一部は、個々に円柱状の１個の導電材６２０Ｇを介して１個の電極パッド１２０Ｇに電気的、機械的に接続されている。複数の電極パッド２４０Ｇの残部は、壁状の１個の導電材６２０ＧＷを介して複数の電極パッド１２０Ｇに電気的、機械的に接続されている。導電材６２０Ｈ、導電材６２０Ｌ、導電材６２０Ｇ及び導電材６２０ＧＷの材料は、例えば半田である。導電材６２０Ｈは第１の導電材の一例であり、導電材６２０Ｌは第２の導電材の一例であり、導電材６２０ＧＷは第３の導電材の一例である。
ＤＳＰ３００もＢＧＡパッケージを有しており、配線基板１００にフリップチップ実装されている。ＤＳＰ３００の下面に複数の電極パッド３４０が設けられている。電極パッド３４０は格子状に配置されている。複数の電極パッド３４０の一部は高速信号用の電極パッド３４０Ｈであり、他の一部は接地用の電極パッド３４０Ｇであり、更に他の一部は他の用途に用いられる電極パッド３４０Ａである。例えば、ＤＳＰ３００の平面形状は長方形であり、電極パッド３４０Ｈは、平面視で、光半導体チップ２００側に配置される辺の近傍に集中して配置されている。例えば、隣り合う２個の電極パッド３４０Ｈを通じて差動信号が伝送され、差動信号が伝送される２個の電極パッド３４０Ｈを挟むように２個の電極パッド３４０Ｇが配置されている。
配線基板１００の上面に複数の電極パッド１３０が、平面視で電極パッド３４０と重なるようにして格子状に配置されている。複数の電極パッド１３０の一部は電極パッド３４０Ｈが電気的に接続される電極パッド１３０Ｈであり、他の一部は電極パッド３４０Ｇが電気的に接続される電極パッド１３０Ｇであり、他の一部は電極パッド３４０Ａが電気的に接続される電極パッド１３０Ａである。１個の電極パッド３４０Ｈは、個々に円柱状の１個の導電材６３０Ｈを介して１個の電極パッド１３０Ｈに電気的、機械的に接続されている。１個の電極パッド３４０Ｇは、個々に円柱状の１個の導電材（図示せず）を介して１個の電極パッド１３０Ｇに電気的、機械的に接続されている。１個の電極パッド３４０Ａは、個々に円柱状の１個の導電材６３０Ａを介して１個の電極パッド１３０Ａに電気的、機械的に接続されている。導電材６３０Ｈ、電極パッド３４０Ｇと電極パッド１３０Ｇとを接続する導電材（図示せず）、及び導電材６３０Ａの材料は、例えば半田である。
配線基板１００は、電極パッド１２０Ｈと電極パッド１３０Ｈとを結ぶ信号線路１５０Ｈと、電極パッド１２０Ｇと電極パッド１３０Ｇとを結ぶ接地線路１５０Ｇとを有する。例えば、信号線路１５０Ｈは配線基板１００の表層部に形成されており、直線状に延びるコプレーナ線路又はマイクロストリップ線路である。例えば、複数の信号線路１５０Ｈは等長配線である。また、複数の信号線路１５０Ｈは、差動信号が伝送される２本の信号線路を含んでおり、差動信号が伝送される２本の信号線路を間に挟むようにして２本の接地線路１５０Ｇが配置されている。つまり、配線基板１００は、２本の信号線路１５０Ｈ及び２本の接地線路１５０Ｇから構成されたＧＳＳＧ配線を含む。例えば、信号線路１５０Ｈの特性インピーダンスは５０Ω程度であり、複数の信号線路１５０Ｈの間で特性インピーダンスが整合している。
上記のように、複数の電極パッド２４０Ｇが１個の導電材６２０ＧＷを介して複数の電極パッド１２０Ｇに電気的、機械的に接続されている。より具体的には、配線基板１００と光半導体チップ２００と間の空間が、導電材６２０ＧＷによって、導電材６２０Ｈが設けられた空間と、導電材６２０Ｌが設けられた空間とに分離されている。つまり、導電材６２０ＧＷによって、導電材６２０Ｈが設けられた空間と、導電材６２０Ｌが設けられた空間とが互いから隔離されている。そして、配線基板１００と光半導体チップ２００と間の空間のうち、導電材６２０Ｌが設けられた空間にアンダーフィル１９０が充填され、導電材６２０Ｈが設けられた空間にはアンダーフィル１９０が充填されていない。つまり、導電材６２０Ｈの周囲にはアンダーフィル１９０が設けられていない。図３Ｃに、第１の実施形態における、配線基板１００、導電材６２０Ｈ、導電材６２０Ｇ、導電材６２０ＧＷ、導電材６２０Ｌ及びアンダーフィル１９０の関係を示す。図３Ｃ等に示すように、導電材６２０Ｌはアンダーフィル１９０に接触し、導電材６２０Ｈはアンダーフィル１９０に非接触である。アンダーフィル１９０は樹脂の一例である。
第１の実施形態に係る光モジュール１では、例えば、光半導体チップ２００とＤＳＰ３００との間で、例えば、信号線路１５０Ｈを介して周波数が最大３０ＧＨｚ以上の信号が伝送される。つまり、導電材６２０Ｈを介して伝送される信号の周波数は最大３０ＧＨｚ以上である。そして、導電材６２０Ｈを介して伝送される信号の速度（第１の速度）が、導電材６２０Ｌを介して伝送される信号の速度（第２の速度）より速い。また、導電材６２０Ｇ及び導電材６２０ＧＷは接地される。
光モジュール１によれば、アンダーフィル１９０が設けられているため、小型化しても優れた強度を得ることができる。また、アンダーフィル１９０は壁状の導電材６２０ＧＷの導電材６２０Ｌ側に形成され、導電材６２０Ｈ側には形成されていないため、アンダーフィル１９０の誘電率に起因する高周波特性の劣化を回避することができる。
また、配線基板１００と光半導体チップ２００との間の接地線路として用いる導電材６２０ＧＷにより導電材６２０Ｌ側の空間と導電材６２０Ｈ側の空間とが隔離されるため、隔離のためだけに用いる部材を形成する必要がない。従って、コストの上昇を抑制することができる。
次に、第１の実施形態に係る光モジュール１の製造方法における、光半導体チップ２００を配線基板１００に実装する方法について説明する。図４Ａ～図４Ｈは、第１の実施形態に係る光モジュール１の製造方法における、光半導体チップ２００を配線基板１００に実装する方法を示す断面図である。図４Ａ～図４Ｈには、図２中のＩ－Ｉ線に沿った断面の変化を示す。
まず、図４Ａに示すように、電極パッド２４０Ｈ、電極パッド２４０Ｇ及び電極パッド２４０Ｌを含む光半導体チップ２００を準備する。次いで、複数の電極パッド２４０Ｇのうちの一部の表面上を含む、導電材６２０ＧＷを形成する予定の領域に半田ペースト６２０Ａを設ける。半田ペースト６２０Ａは、例えばスクリーン印刷により設けることができる。
次いで、リフローを行うことにより、図４Ｂに示すように、壁状の導電材６２０Ｂを形成する。
その後、図４Ｃに示すように、電極パッド２４０Ｈの表面上、電極パッド２４０Ｌの表面上、及び残りの電極パッド２４０Ｇ（複数の電極パッド２４０Ｇのうちで導電材６２０Ｂが設けられていない電極パッド２４０Ｇ）の表面上に半田ボール６２０Ｃを載置する。
続いて、リフローを行うことにより、図４Ｄに示すように、電極パッド２４０Ｈの表面上、電極パッド２４０Ｌの表面上及び残りの電極パッド２４０Ｇの表面上に、個々に導電材６２０Ｄを形成する。
また、図４Ｅに示すように、電極パッド１２０Ｈ、電極パッド１２０Ｇ及び電極パッド１２０Ｌを含む配線基板１００を準備する。次いで、電極パッド１２０Ｈの表面上、電極パッド１２０Ｇの表面上及び電極パッド１２０Ｌの表面上に半田ペースト６２９を設ける。半田ペースト６２９は、例えばスクリーン印刷により設けることができる。図４Ｅ～図４Ｇに図示しないが、配線基板１００は、電極パッド１３０Ｈ、電極パッド１３０Ｇ及び電極パッド１３０Ａも含む。
その後、図４Ｆに示すように、配線基板１００上に光半導体チップ２００を載置する。このとき、平面視で、電極パッド２４０Ｈと電極パッド１２０Ｈとが重なり、電極パッド２４０Ｇと電極パッド１２０Ｇとが重なり、電極パッド２４０Ｌと電極パッド１２０Ｌとが重なるように位置合わせを行う。
続いて、リフローを行う。この結果、図４Ｇに示すように、電極パッド２４０Ｈと電極パッド１２０Ｈとの間では、半田ペースト６２９と導電材６２０Ｄとが一体化して円柱状の導電材６２０Ｈが形成される。電極パッド２４０Ｌと電極パッド１２０Ｌとの間では、半田ペースト６２９と導電材６２０Ｄとが一体化して円柱状の導電材６２０Ｌが形成される。複数の電極パッド２４０Ｇの一部と電極パッド１２０Ｇとの間では、半田ペースト６２９と導電材６２０Ｄとが一体化して円柱状の導電材６２０Ｇ（図３Ｃ参照）が形成される。複数の電極パッド２４０Ｇの残部と電極パッド１２０Ｇとの間では、半田ペースト６２９と導電材６２０Ｂとが一体化して壁状の導電材６２０ＧＷが形成される。導電材６２０ＧＷによって、導電材６２０Ｈが設けられた空間と、導電材６２０Ｌが設けられた空間とが互いから隔離される。
次いで、図４Ｈに示すように、配線基板１００と光半導体チップ２００と間の空間のうち、導電材６２０Ｌが設けられた空間にアンダーフィル１９０を充填する。このとき、導電材６２０ＧＷによって、導電材６２０Ｈが設けられた空間と、導電材６２０Ｌが設けられた空間とが互いから隔離されているため、導電材６２０Ｈが設けられた空間にはアンダーフィル１９０が充填されない。
このようにして、光半導体チップ２００を配線基板１００に実装することができる。
更に、ＤＳＰ３００及びレーザ４００を配線基板１００に実装することで、第１の実施形態に係る光モジュール１を製造することができる。なお、ＤＳＰ３００は光半導体チップ２００と並行して配線基板１００に実装してもよい。
この製造方法によれば、導電材６２０ＧＷを形成しておくことにより、高速信号が伝送される導電材６２０Ｈ側へのアンダーフィル１９０の流れ込みを確実に防止することができる。また、導電材６２０ＧＷにより導電材６２０Ｌ側の空間と導電材６２０Ｈ側の空間とが隔離されるため、隔離のためだけに用いる部材を形成する必要がない。従って、コストの上昇を抑制することができる。
（第２の実施形態）
次に、第２の実施形態について説明する。第２の実施形態は、光半導体チップ２００と配線基板１００との間の導電材の構成の点で第１の実施形態と相違する。図５Ａは、第２の実施形態に係る光モジュールの構造を示す断面図である。図５Ａには、第１の実施形態の図３Ａ中のＩ－Ｉ線に沿った断面に相当する断面のうち、光半導体チップ２００が設けられた部分を示す。図５Ｂは、第２の実施形態における、配線基板、導電材及びアンダーフィルの関係を示す図である。
次に、第２の実施形態について説明する。第２の実施形態は、光半導体チップ２００と配線基板１００との間の導電材の構成の点で第１の実施形態と相違する。図５Ａは、第２の実施形態に係る光モジュールの構造を示す断面図である。図５Ａには、第１の実施形態の図３Ａ中のＩ－Ｉ線に沿った断面に相当する断面のうち、光半導体チップ２００が設けられた部分を示す。図５Ｂは、第２の実施形態における、配線基板、導電材及びアンダーフィルの関係を示す図である。
図５Ａ及び図５Ｂに示すように、第２の実施形態に係る光モジュール２は、導電材６２０Ｈに代えて導電材６２５Ｈを有し、導電材６２０Ｌに代えて導電材６２５Ｌを有し、導電材６２０Ｇに代えて導電材６２５Ｇを有する。導電材６２５Ｈは、いずれも、コア材６２１Ｈと、コア材６２１Ｈを被覆する導電被覆材６２２Ｈとを有する。導電材６２５Ｌは、いずれも、コア材６２１Ｌと、コア材６２１Ｌを被覆する導電被覆材６２２Ｌとを有する。導電材６２５Ｇは、いずれも、コア材６２１Ｇと、コア材６２１Ｇを被覆する導電被覆材６２２Ｇとを有する。コア材６２１Ｈ、コア材６２１Ｌ及びコア材６２１Ｇの材料は、例えば銅（Ｃｕ）又は銅合金等の融点が半田の融点よりも高い金属である。コア材６２１Ｈ、コア材６２１Ｌ及びコア材６２１Ｇの材料に耐熱性樹脂を用いてもよい。コア材６２１Ｈ、コア材６２１Ｌ及びコア材６２１Ｇの直径は、実質的に同一である。
第２の実施形態によっても第１の実施形態と同様の効果を得ることができる。更に、詳細は後述するが、配線基板１００と光半導体チップ２００との間の距離を安定させ、高周波特性の安定性を向上することができる。
次に、第２の実施形態に係る光モジュール１の製造方法における、光半導体チップ２００を配線基板１００に実装する方法について説明する。図６Ａ～図６Ｅは、第２の実施形態に係る光モジュール２の製造方法における、光半導体チップ２００を配線基板１００に実装する方法を示す断面図である。図６Ａ～図６Ｅには、図２中のＩ－Ｉ線に沿った断面に相当する断面の変化を示す。
まず、第１の実施形態と同様にして、壁状の導電材６２０Ｂを形成する処理まで行う（図４Ｂ参照）。次いで、図６Ａに示すように、電極パッド２４０Ｈの表面上、電極パッド２４０Ｌの表面上及び残りの電極パッド２４０Ｇ（複数の電極パッド２４０Ｇのうちで導電材６２０Ｂが設けられていない電極パッド２４０Ｇ）の表面上に、コア材６２１と、コア材６２１を被覆する導電被覆材６２２とを有する半田ボール６２５を載置する。
その後、リフローを行うことにより、図６Ｂに示すように、電極パッド２４０Ｈの表面上、電極パッド２４０Ｌの表面上及び残りの電極パッド２４０Ｇの表面上に、個々に、コア材６２１を含む導電材６２５Ｄを形成する。
続いて、図６Ｃに示すように、半田ペースト６２９が設けられた配線基板１００上に光半導体チップ２００を載置する。このとき、平面視で、電極パッド２４０Ｈと電極パッド１２０Ｈとが重なり、電極パッド２４０Ｇと電極パッド１２０Ｇとが重なり、電極パッド２４０Ｌと電極パッド１２０Ｌとが重なるように位置合わせを行う。
次いで、リフローを行う。この結果、図６Ｄに示すように、電極パッド２４０Ｈと電極パッド１２０Ｈとの間では、半田ペースト６２９と導電材６２５Ｄとが一体化して導電材６２５Ｈが形成される。電極パッド２４０Ｌと電極パッド１２０Ｌとの間では、半田ペースト６２９と導電材６２５Ｄとが一体化して導電材６２５Ｌが形成される。複数の電極パッド２４０Ｇの一部と電極パッド１２０Ｇとの間では、半田ペースト６２９と導電材６２５Ｄとが一体化して円柱状の導電材６２５Ｇ（図５Ｂ参照）が形成される。複数の電極パッド２４０Ｇの残部と電極パッド１２０Ｇとの間では、半田ペースト６２９と導電材６２０Ｂとが一体化して壁状の導電材６２０ＧＷが形成される。導電材６２０ＧＷによって、導電材６２５Ｈが設けられた空間と、導電材６２５Ｌが設けられた空間とが互いから隔離される。
その後、図６Ｅに示すように、配線基板１００と光半導体チップ２００と間の空間のうち、導電材６２５Ｌが設けられた空間にアンダーフィル１９０を充填する。このとき、導電材６２０ＧＷによって、導電材６２５Ｈが設けられた空間と、導電材６２５Ｌが設けられた空間とが互いから隔離されているため、導電材６２５Ｈが設けられた空間にはアンダーフィル１９０が充填されない。
このようにして、光半導体チップ２００を配線基板１００に実装することができる。
更に、ＤＳＰ３００及びレーザ４００を配線基板１００に実装することで、第１の実施形態に係る光モジュール１を製造することができる。なお、ＤＳＰ３００は光半導体チップ２００と並行して配線基板１００に実装してもよい。
第２の実施形態では、導電材６２５Ｈがコア材６２１Ｈを含み、導電材６２５Ｌがコア材６２１Ｌを含み、導電材６２５Ｇがコア材６２１Ｇを含む。従って、配線基板１００と光半導体チップ２００との間の距離を安定させることができる。すなわち、配線基板１００上に光半導体チップ２００を載置した後のリフロー（図６Ｄ参照）では、溶融した導電材６２０Ｂ及び導電被覆材６２２が個々に表面張力を発揮する。このとき、導電被覆材６２２の体積が導電材６２０Ｂの体積よりも大きいため、導電被覆材６２２が導電材６２０Ｂよりも配線基板１００と光半導体チップ２００との間の距離を強く縮小しようとする。このため、第１の実施形態では、配線基板１００と光半導体チップ２００との間の距離にばらつきが生じることがある。例えば、配線基板１００と光半導体チップ２００との間の距離がＸ１側で短く、Ｘ側で長くなることがある。これに対し、第２の実施形態では、導電被覆材６２２が導電材６２０Ｂよりも配線基板１００と光半導体チップ２００との間の距離を強く縮小しようとしても、コア材６２１Ｈ、コア材６２１Ｌ及びコア材６２１Ｇが含まれているため、配線基板１００と光半導体チップ２００との間の距離を安定させることができる。
一般に高速信号が伝送される伝送線路では、特性インピーダンスＺ０を安定させることが重要である。導電材６２０Ｈ及び導電材６２５Ｈに着目すると、特性インピーダンスＺ０は、導電材６２０Ｈ及び導電材６２５Ｈの高さに関するインダクタンスＬと、導電材６２０Ｈ及び導電材６２５Ｈと導電材６２０ＧＷとの間の距離に関するキャパシタンスＣとに依存する。特性インピーダンスＺ０は、Ｚ０＝（Ｌ／Ｃ）１／２で表すことができる。従って、配線基板１００と光半導体チップ２００との間の距離を安定できることは、高周波特性の安定性の観点から極めて好ましい。
なお、全ての導電材６２５Ｈがコア材６２１Ｈを含み、全ての導電材６２５Ｌがコア材６２１Ｌを含み、全ての導電材６２５Ｇがコア材６２１Ｇを含む必要はない。例えば、図７に示すように、少なくとも直線上にない３個の導電材６２０Ｈ、導電材６２０Ｌ又は導電材６２０Ｇにコア材が含まれていればよい。図７は、第２の実施形態の変形例における、配線基板、導電材及びアンダーフィルの関係を示す図である。
また、コア材６２１を含む半田ボール６２５を用いずに、コア材を含まない半田ボール６２０Ｃを用いつつ、配線基板１００と光半導体チップ２００との間にスペーサを介在させて距離を安定させてもよい。スペーサは、例えば光半導体チップ２００の４隅に配置することができる。
また、ＸＹ平面内で導電材６２０ＧＷの分布に対称性を持たせることで配線基板１００と光半導体チップ２００との間の距離のばらつきを抑制することもできる。例えば、図８に示すように、導電材６２０ＧＷが９０°回転の点対称で配置されていてもよい。また、図９に示すように、導電材６２０ＧＷが１８０°回転の点対称で配置されていてもよい。図８は、第１の実施形態の第１の変形例における、配線基板、導電材及びアンダーフィルの関係を示す図である。図９は、第１の実施形態の第２の変形例における、配線基板、導電材及びアンダーフィルの関係を示す図である。
なお、導電材６２０Ｂは、導電材６２０ＧＷを形成するリフローにおいて、表面張力によって球体に近づこうとする。このため、半田ペースト６２０Ａのレイアウトは、形成しようとする導電材６２０ＧＷのレイアウト及び溶融した導電材６２０Ｂの表面張力を考慮して決定することが好ましい。例えば、半田ペースト６２０Ａは、一定の幅を持たせて形成することができる。
図１０及び図１１に示すように、電極パッド２４０が最近接で並ぶ方向において、電極パッド２４０Ｈと電極パッド２４０Ｌとの間に配置された複数の電極パッド２４０Ｇが連結して帯状の電極パッド２４０ＧＷが形成されていてもよい。また、複数の電極パッド１２０Ｇにおいても、複数の電極パッド１２０Ｇが連結して帯状の電極パッド１２０ＧＷが形成され、電極パッド１２０ＧＷが電極パッド２４０ＧＷに電気的に接続されていてもよい。図１０は、第１の実施形態の第３の変形例における、光半導体チップ２００の構造を示す下面図である。図１１は、第１の実施形態の第３の変形例に係る光モジュールの構造を示す平面図である。電極パッド２４０ＧＷは第３の電極パッドの一例であり、電極パッド１２０ＧＷは第６の電極パッドの一例である。
第１の実施形態の第１の変形例、第２の変形例、第２の実施形態においても、第１の実施形態の第３１の変形例と同様に、帯状の電極パッド２４０ＧＷが形成されていてもよく、帯状の電極パッド１２０ＧＷが形成されていてもよい。
以上、好ましい実施の形態等について詳説したが、上述した実施の形態等に制限されることはなく、特許請求の範囲に記載された範囲を逸脱することなく、上述した実施の形態等に種々の変形及び置換を加えることができる。
例えば、第１の電極パッド、第１の導電材及び第４の電極パッドを通じて伝送される信号は差動信号でなくてもよい。
以下、本開示の諸態様を付記としてまとめて記載する。
（付記１）
第１の電極パッドと、第２の電極パッドと、前記第１の電極パッドと前記第２の電極パッドとの間に配置された第３の電極パッドと、を備えた光半導体チップと、
第４の電極パッドと、第５の電極パッドと、前記第４の電極パッドと前記第５の電極パッドとの間に配置された第６の電極パッドと、備え、前記光半導体チップがフリップチップ実装された配線基板と、
前記第１の電極パッドと前記第４の電極パッドとを接続する第１の導電材と、
前記第２の電極パッドと前記第５の電極パッドとを接続する第２の導電材と、
前記第１の導電材と前記第２の導電材との間に配置され、前記第３の電極パッドと前記第６の電極パッドとを接続する第３の導電材と、
前記光半導体チップと前記配線基板との間で、前記第３の導電材の前記第２の導電材側に設けられた樹脂と、
を有することを特徴とする光モジュール。
（付記２）
前記光半導体チップは、前記第３の電極パッドを複数有し、
前記配線基板は、前記第６の電極パッドを複数有し、
前記第３の導電材は、複数の前記第３の電極パッドと複数の前記第６の電極パッドとを接続していることを特徴とする付記１に記載の光モジュール。
（付記３）
前記第２の導電材は前記樹脂に接触し、前記第１の導電材は前記樹脂に非接触であることを特徴とする付記１又は２に記載の光モジュール。
（付記４）
前記第１の導電材及び前記第２の導電材はコア材を有することを特徴とする付記１乃至３のいずれか１項に記載の光モジュール。
（付記５）
前記配線基板は、前記第４の電極パッドに接続されたコプレーナ線路を有することを特徴とする付記１乃至４のいずれか１項に記載の光モジュール。
（付記６）
前記第１の導電材を介して伝送される信号の第１の速度が、前記第２の導電材を介して伝送される信号の第２の速度よりも速いことを特徴とする付記１乃至５のいずれか１項に記載の光モジュール。
（付記７）
前記第３の電極パッド、前記第６の電極パッド及び前記第３の導電材は接地されることを特徴とする付記１乃至６のいずれか１項に記載の光モジュール。
（付記８）
前記第１の導電材を介して伝送される信号の周波数が最大３０ＧＨｚ以上であることを特徴とする付記１乃至７のいずれか１項に記載の光モジュール。
（付記９）
第１の電極パッドと、第２の電極パッドと、前記第１の電極パッドと前記第２の電極パッドとの間に配置された第３の電極パッドと、を備えた光半導体チップを準備する工程と、
第４の電極パッドと、第５の電極パッドと、前記第４の電極パッドと前記第５の電極パッドとの間に配置された第６の電極パッドと、備え、前記光半導体チップがフリップチップ実装された配線基板を準備する工程と、
前記第１の電極パッドと前記第４の電極パッドとを接続する第１の導電材を形成する工程と、
前記第２の電極パッドと前記第５の電極パッドとを接続する第２の導電材を形成する工程と、
前記第１の導電材と前記第２の導電材との間に、前記第３の電極パッドと前記第６の電極パッドとを接続する第３の導電材を形成する工程と、
前記光半導体チップと前記配線基板との間で、前記第３の導電材の前記第２の導電材側に樹脂を形成する工程と、
を有することを特徴とする光モジュールの製造方法。
（付記１０）
前記光半導体チップは、前記第３の電極パッドを複数有し、
前記配線基板は、前記第６の電極パッドを複数有し、
前記第３の導電材により、複数の前記第３の電極パッドと複数の前記第６の電極パッドとを接続することを特徴とする付記９に記載の光モジュールの製造方法。
（付記１１）
前記樹脂を、前記第２の導電材に接触し、前記第１の導電材には非接触となるように形成することを特徴とする付記９又は１０に記載の光モジュールの製造方法。
（付記１２）
前記第１の導電材及び前記第２の導電材はコア材を有することを特徴とする付記９乃至１１のいずれか１項に記載の光モジュールの製造方法。
（付記１３）
前記配線基板は、前記第４の電極パッドに接続されたコプレーナ線路を有することを特徴とする付記９乃至１２のいずれか１項に記載の光モジュールの製造方法。
（付記１４）
前記第１の導電材を介して伝送される信号の第１の速度が、前記第２の導電材を介して伝送される信号の第２の速度よりも速いことを特徴とする付記９乃至１３のいずれか１項に記載の光モジュールの製造方法。
（付記１５）
前記第３の電極パッド、前記第６の電極パッド及び前記第３の導電材は接地されることを特徴とする付記９乃至１４のいずれか１項に記載の光モジュールの製造方法。
（付記１６）
前記第１の導電材を介して伝送される信号の周波数が最大３０ＧＨｚ以上であることを特徴とする付記９乃至１５のいずれか１項に記載の光モジュールの製造方法。
第１の電極パッドと、第２の電極パッドと、前記第１の電極パッドと前記第２の電極パッドとの間に配置された第３の電極パッドと、を備えた光半導体チップと、
第４の電極パッドと、第５の電極パッドと、前記第４の電極パッドと前記第５の電極パッドとの間に配置された第６の電極パッドと、備え、前記光半導体チップがフリップチップ実装された配線基板と、
前記第１の電極パッドと前記第４の電極パッドとを接続する第１の導電材と、
前記第２の電極パッドと前記第５の電極パッドとを接続する第２の導電材と、
前記第１の導電材と前記第２の導電材との間に配置され、前記第３の電極パッドと前記第６の電極パッドとを接続する第３の導電材と、
前記光半導体チップと前記配線基板との間で、前記第３の導電材の前記第２の導電材側に設けられた樹脂と、
を有することを特徴とする光モジュール。
（付記２）
前記光半導体チップは、前記第３の電極パッドを複数有し、
前記配線基板は、前記第６の電極パッドを複数有し、
前記第３の導電材は、複数の前記第３の電極パッドと複数の前記第６の電極パッドとを接続していることを特徴とする付記１に記載の光モジュール。
（付記３）
前記第２の導電材は前記樹脂に接触し、前記第１の導電材は前記樹脂に非接触であることを特徴とする付記１又は２に記載の光モジュール。
（付記４）
前記第１の導電材及び前記第２の導電材はコア材を有することを特徴とする付記１乃至３のいずれか１項に記載の光モジュール。
（付記５）
前記配線基板は、前記第４の電極パッドに接続されたコプレーナ線路を有することを特徴とする付記１乃至４のいずれか１項に記載の光モジュール。
（付記６）
前記第１の導電材を介して伝送される信号の第１の速度が、前記第２の導電材を介して伝送される信号の第２の速度よりも速いことを特徴とする付記１乃至５のいずれか１項に記載の光モジュール。
（付記７）
前記第３の電極パッド、前記第６の電極パッド及び前記第３の導電材は接地されることを特徴とする付記１乃至６のいずれか１項に記載の光モジュール。
（付記８）
前記第１の導電材を介して伝送される信号の周波数が最大３０ＧＨｚ以上であることを特徴とする付記１乃至７のいずれか１項に記載の光モジュール。
（付記９）
第１の電極パッドと、第２の電極パッドと、前記第１の電極パッドと前記第２の電極パッドとの間に配置された第３の電極パッドと、を備えた光半導体チップを準備する工程と、
第４の電極パッドと、第５の電極パッドと、前記第４の電極パッドと前記第５の電極パッドとの間に配置された第６の電極パッドと、備え、前記光半導体チップがフリップチップ実装された配線基板を準備する工程と、
前記第１の電極パッドと前記第４の電極パッドとを接続する第１の導電材を形成する工程と、
前記第２の電極パッドと前記第５の電極パッドとを接続する第２の導電材を形成する工程と、
前記第１の導電材と前記第２の導電材との間に、前記第３の電極パッドと前記第６の電極パッドとを接続する第３の導電材を形成する工程と、
前記光半導体チップと前記配線基板との間で、前記第３の導電材の前記第２の導電材側に樹脂を形成する工程と、
を有することを特徴とする光モジュールの製造方法。
（付記１０）
前記光半導体チップは、前記第３の電極パッドを複数有し、
前記配線基板は、前記第６の電極パッドを複数有し、
前記第３の導電材により、複数の前記第３の電極パッドと複数の前記第６の電極パッドとを接続することを特徴とする付記９に記載の光モジュールの製造方法。
（付記１１）
前記樹脂を、前記第２の導電材に接触し、前記第１の導電材には非接触となるように形成することを特徴とする付記９又は１０に記載の光モジュールの製造方法。
（付記１２）
前記第１の導電材及び前記第２の導電材はコア材を有することを特徴とする付記９乃至１１のいずれか１項に記載の光モジュールの製造方法。
（付記１３）
前記配線基板は、前記第４の電極パッドに接続されたコプレーナ線路を有することを特徴とする付記９乃至１２のいずれか１項に記載の光モジュールの製造方法。
（付記１４）
前記第１の導電材を介して伝送される信号の第１の速度が、前記第２の導電材を介して伝送される信号の第２の速度よりも速いことを特徴とする付記９乃至１３のいずれか１項に記載の光モジュールの製造方法。
（付記１５）
前記第３の電極パッド、前記第６の電極パッド及び前記第３の導電材は接地されることを特徴とする付記９乃至１４のいずれか１項に記載の光モジュールの製造方法。
（付記１６）
前記第１の導電材を介して伝送される信号の周波数が最大３０ＧＨｚ以上であることを特徴とする付記９乃至１５のいずれか１項に記載の光モジュールの製造方法。
１、２：光モジュール
１００：配線基板
１２０Ｈ、１２０Ｌ、１２０Ｇ、２４０Ｈ、２４０Ｌ、２４０Ｇ：電極パッド
１９０：アンダーフィル
２００：光半導体チップ
６２０Ａ、６２９：半田ペースト
６２０Ｃ、６２５：半田ボール
６２０Ｈ、６２０Ｌ、６２０Ｇ、６２０ＧＷ、６２５Ｈ、６２５Ｌ、６２５Ｇ：導電材
６２１Ｈ、６２１Ｌ、６２１Ｇ：コア材
１００：配線基板
１２０Ｈ、１２０Ｌ、１２０Ｇ、２４０Ｈ、２４０Ｌ、２４０Ｇ：電極パッド
１９０：アンダーフィル
２００：光半導体チップ
６２０Ａ、６２９：半田ペースト
６２０Ｃ、６２５：半田ボール
６２０Ｈ、６２０Ｌ、６２０Ｇ、６２０ＧＷ、６２５Ｈ、６２５Ｌ、６２５Ｇ：導電材
６２１Ｈ、６２１Ｌ、６２１Ｇ：コア材
Claims (6)
- 複数の第１の電極パッドと、複数の第２の電極パッドと、前記複数の第１の電極パッドと前記複数の第２の電極パッドとの間に配置された複数の第３の電極パッドと、を備えた光半導体チップと、
複数の第４の電極パッドと、複数の第５の電極パッドと、前記複数の第４の電極パッドと前記複数の第５の電極パッドとの間に配置された複数の第６の電極パッドと、備え、前記光半導体チップがフリップチップ実装された配線基板と、
それぞれ、前記複数の第１の電極パッドのうちの一つと前記複数の第４の電極パッドのうちの一つとを接続する複数の第１の導電材と、
それぞれ、前記複数の第２の電極パッドのうちの一つと前記複数の第５の電極パッドのうちの一つとを接続する複数の第２の導電材と、
前記複数の第１の導電材と前記複数の第２の導電材との間に配置された１又は２以上の第３の導電材と、
前記光半導体チップと前記配線基板との間で、前記第３の導電材の前記第２の導電材側に設けられた樹脂と、
を有し、
前記第２の導電材は前記樹脂に接触し、前記第１の導電材は前記樹脂に非接触であり、
前記光半導体チップは、前記第３の導電材の前記第１の導電材側に設けられた複数の第７の電極パッドを有し、
前記配線基板は、前記第３の導電材の前記第１の導電材側に設けられた複数の第８の電極パッドを有し、
前記第３の導電材の前記第１の導電材側に設けられ、それぞれ、前記複数の第７の電極パッドのうちの一つと前記複数の第８の電極パッドのうちの一つとを接続する複数の第４の導電材を有し、
前記１又は２以上の第３の導電材の各々は、前記複数の第３の電極パッドと前記複数の第６の電極パッドとを接続し、
前記第１の導電材を介して伝送される信号の第１の速度が、前記第２の導電材を介して伝送される信号の第２の速度よりも速く、
前記複数の第１の導電材、前記複数の第２の導電材及び前記第４の導電材のうちの同一直線上にない少なくとも３個で、すべてではない導電材はコア材を有し、
前記コア材の融点は半田の融点よりも高いことを特徴とする光モジュール。 - 前記配線基板は、前記第４の電極パッドに接続されたコプレーナ線路を有することを特徴とする請求項１に記載の光モジュール。
- 前記第３の電極パッド、前記第６の電極パッド及び前記第３の導電材は接地されることを特徴とする請求項１又は２に記載の光モジュール。
- 前記コア材を有する少なくとも３個の導電材の数は、前記第３の導電材の前記第１の導電材側において、前記第３の導電材の前記第２の導電材側よりも少ないことを特徴とする請求項１乃至３のいずれか１項に記載の光モジュール。
- 複数の第１の電極パッドと、複数の第２の電極パッドと、前記複数の第１の電極パッドと前記複数の第２の電極パッドとの間に配置された複数の第３の電極パッドと、を備えた光半導体チップを準備する工程と、
複数の第４の電極パッドと、複数の第５の電極パッドと、前記複数の第４の電極パッドと前記複数の第５の電極パッドとの間に配置された複数の第６の電極パッドと、備え、前記光半導体チップがフリップチップ実装された配線基板を準備する工程と、
それぞれ、前記複数の第１の電極パッドのうちの一つと前記複数の第４の電極パッドのうちの一つとを接続する複数の第１の導電材を形成する工程と、
それぞれ、前記複数の第２の電極パッドのうちの一つと前記複数の第５の電極パッドのうちの一つとを接続する複数の第２の導電材を形成する工程と、
前記複数の第１の導電材と前記複数の第２の導電材との間に、１又は２以上の第３の導電材を形成する工程と、
前記光半導体チップと前記配線基板との間で、前記第３の導電材の前記第２の導電材側に樹脂を、前記第２の導電材に接触し、前記第１の導電材には非接触となるように形成する工程と、
を有し、
前記光半導体チップは、前記第３の導電材の前記第１の導電材側に設けられる複数の第７の電極パッドを有し、
前記配線基板は、前記第３の導電材の前記第１の導電材側に設けられる複数の第８の電極パッドを有し、
前記第３の導電材の前記第１の導電材側に、それぞれ、前記複数の第７の電極パッドのうちの一つと前記複数の第８の電極パッドのうちの一つとを接続する複数の第４の導電材を形成する工程を有し、
前記１又は２以上の第３の導電材の各々は、前記複数の第３の電極パッドと前記複数の第６の電極パッドとを接続し、
前記第１の導電材を介して伝送される信号の第１の速度が、前記第２の導電材を介して伝送される信号の第２の速度よりも速く、
前記複数の第１の導電材、前記複数の第２の導電材及び前記第４の導電材のうちの同一直線上にない少なくとも３個で、すべてではない導電材はコア材を有し、
前記コア材の融点は半田の融点よりも高いことを特徴とする光モジュールの製造方法。 - 前記コア材を有する少なくとも３個の導電材の数は、前記第３の導電材の前記第１の導電材側において、前記第３の導電材の前記第２の導電材側よりも少ないことを特徴とする請求項５に記載の光モジュールの製造方法。
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| US20200286874A1 (en) | 2020-09-10 |
| US11495589B2 (en) | 2022-11-08 |
| JP2020144192A (ja) | 2020-09-10 |
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