JP7290952B2 - 窒化物半導体基板のアニール方法 - Google Patents
窒化物半導体基板のアニール方法 Download PDFInfo
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- JP7290952B2 JP7290952B2 JP2019019673A JP2019019673A JP7290952B2 JP 7290952 B2 JP7290952 B2 JP 7290952B2 JP 2019019673 A JP2019019673 A JP 2019019673A JP 2019019673 A JP2019019673 A JP 2019019673A JP 7290952 B2 JP7290952 B2 JP 7290952B2
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- nitride semiconductor
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Claims (4)
- 基板の表面に窒化物半導体薄膜を成長させた窒化物半導体基板をアニールホルダに設置し、該アニールホルダと前記窒化物半導体基板とを一緒にガス中で加熱することにより前記窒化物半導体薄膜をアニールする方法において、前記窒化物半導体基板の最上面と、前記窒化物半導体基板と前記アニールホルダの底面との間に、それぞれダミー基板を設置し、
前記ダミー基板は、前記窒化物半導体基板の基板と同じ材質で形成され、
複数枚の前記窒化物半導体基板を重ねて前記アニールホルダに設置する際には、窒化物半導体基板における前記窒化物半導体薄膜の面の方向を逆に向けて交互に重ねることを特徴とする窒化物半導体基板のアニール方法。 - 前記基板は、Al元素比率が40%以上のアルミニウム化合物で形成されていることを特徴とする請求項1記載の窒化物半導体基板のアニール方法。
- 前記窒化物半導体薄膜は、AlxGayIn(1-x-y)N(0≦x≦1、0≦y≦1、(x+y)≦1)であることを特徴とする請求項1又は2記載の窒化物半導体基板のアニール方法。
- 前記ガスは、窒素、アルゴン、ヘリウム、クリプトン、ネオン、一酸化炭素、アンモニアのいずれか一種のガス又は複数が混合したガスであることを特徴とする請求項1乃至3のいずれか1項記載の窒化物半導体基板のアニール方法。
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CN114293263A (zh) * | 2021-12-30 | 2022-04-08 | 广东省科学院半导体研究所 | 防止高温热退火下表面分解和杂质并入的保护装置及方法 |
CN115369489A (zh) * | 2022-07-29 | 2022-11-22 | 江西兆驰半导体有限公司 | 一种衬底片无氧退火炉、退火方法以及衬底片 |
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JP2006339396A (ja) | 2005-06-02 | 2006-12-14 | Kwansei Gakuin | イオン注入アニール方法、半導体素子の製造方法、及び半導体素子 |
WO2008010541A1 (fr) | 2006-07-19 | 2008-01-24 | Ngk Insulators, Ltd. | Procédé de réduction de dislocation dans un cristal de nitrure de groupe iii et substrat pour croissance épitaxiale |
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JP5170030B2 (ja) * | 2009-08-11 | 2013-03-27 | 日立電線株式会社 | 窒化物半導体自立基板、窒化物半導体自立基板の製造方法、及び窒化物半導体デバイス |
JP6206758B2 (ja) * | 2013-08-26 | 2017-10-04 | 国立大学法人東北大学 | 窒化アルミニウム(AlN)膜の製造方法 |
KR102052287B1 (ko) * | 2015-09-11 | 2019-12-04 | 고쿠리츠다이가쿠호진 미에다이가쿠 | 질화물 반도체 기판의 제조방법 |
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JP2006339396A (ja) | 2005-06-02 | 2006-12-14 | Kwansei Gakuin | イオン注入アニール方法、半導体素子の製造方法、及び半導体素子 |
WO2008010541A1 (fr) | 2006-07-19 | 2008-01-24 | Ngk Insulators, Ltd. | Procédé de réduction de dislocation dans un cristal de nitrure de groupe iii et substrat pour croissance épitaxiale |
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