JP7284265B2 - アンプルの飛沫軽減 - Google Patents

アンプルの飛沫軽減 Download PDF

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Publication number
JP7284265B2
JP7284265B2 JP2021532388A JP2021532388A JP7284265B2 JP 7284265 B2 JP7284265 B2 JP 7284265B2 JP 2021532388 A JP2021532388 A JP 2021532388A JP 2021532388 A JP2021532388 A JP 2021532388A JP 7284265 B2 JP7284265 B2 JP 7284265B2
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Japan
Prior art keywords
ampoule
holes
nozzle
lid
container
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JP2021532388A
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English (en)
Japanese (ja)
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JP2022511113A (ja
Inventor
メヘラン ベジャット,
シェン-テー カオ,
ライ チャオ,
シアンシン ルイ,
チェンホア チョウ,
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2022511113A publication Critical patent/JP2022511113A/ja
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
JP2021532388A 2018-12-11 2018-12-11 アンプルの飛沫軽減 Active JP7284265B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2018/065049 WO2020122884A1 (en) 2018-12-11 2018-12-11 Ampoule splash mitigation

Publications (2)

Publication Number Publication Date
JP2022511113A JP2022511113A (ja) 2022-01-28
JP7284265B2 true JP7284265B2 (ja) 2023-05-30

Family

ID=71076062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021532388A Active JP7284265B2 (ja) 2018-12-11 2018-12-11 アンプルの飛沫軽減

Country Status (4)

Country Link
JP (1) JP7284265B2 (ko)
KR (1) KR102690002B1 (ko)
CN (1) CN113166936A (ko)
WO (1) WO2020122884A1 (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100112215A1 (en) 2008-10-31 2010-05-06 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US20100174099A1 (en) 2009-01-05 2010-07-08 Lyondell Chemical Technology, L.P. Propylene oxide reactor gas distribution system
JP2011167680A (ja) 2010-01-14 2011-09-01 Rohm & Haas Electronic Materials Llc 一定濃度の蒸発のための方法およびその方法を使用する装置
JP2016208026A (ja) 2015-04-18 2016-12-08 エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated 前駆体材料の送達のための容器及び方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4961882A (en) * 1988-06-23 1990-10-09 Exxon Research And Engineering Company Fine bubble generator and method
ATE139580T1 (de) * 1989-09-26 1996-07-15 Canon Kk Gasversorgungsvorrichtung und ihre verwendung für eine filmabscheidungsanlage
JPH0615154A (ja) * 1991-07-26 1994-01-25 Isao Tamura 泡出し器
JP5020407B2 (ja) * 2008-03-17 2012-09-05 アプライド マテリアルズ インコーポレイテッド アンプルのための加熱式バルブマニホールド
US8348248B2 (en) * 2009-03-11 2013-01-08 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Bubbling supply system for stable precursor supply
US8927066B2 (en) * 2011-04-29 2015-01-06 Applied Materials, Inc. Method and apparatus for gas delivery
CN102887810B (zh) * 2012-10-18 2015-04-22 广东新华粤华德科技有限公司 一种裂解c8馏分中苯乙炔选择性加氢反应方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100112215A1 (en) 2008-10-31 2010-05-06 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US20100174099A1 (en) 2009-01-05 2010-07-08 Lyondell Chemical Technology, L.P. Propylene oxide reactor gas distribution system
JP2011167680A (ja) 2010-01-14 2011-09-01 Rohm & Haas Electronic Materials Llc 一定濃度の蒸発のための方法およびその方法を使用する装置
JP2016208026A (ja) 2015-04-18 2016-12-08 エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated 前駆体材料の送達のための容器及び方法

Also Published As

Publication number Publication date
JP2022511113A (ja) 2022-01-28
CN113166936A (zh) 2021-07-23
WO2020122884A1 (en) 2020-06-18
KR20210091334A (ko) 2021-07-21
KR102690002B1 (ko) 2024-07-29

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