JP7280261B2 - 半導体素子および半導体装置 - Google Patents

半導体素子および半導体装置 Download PDF

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JP7280261B2
JP7280261B2 JP2020530088A JP2020530088A JP7280261B2 JP 7280261 B2 JP7280261 B2 JP 7280261B2 JP 2020530088 A JP2020530088 A JP 2020530088A JP 2020530088 A JP2020530088 A JP 2020530088A JP 7280261 B2 JP7280261 B2 JP 7280261B2
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layer
composition
semiconductor device
electrode
main surface
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JPWO2020012958A1 (ja
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博文 田中
雄人 西山
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Rohm Co Ltd
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Rohm Co Ltd
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JP2004096061A (ja) 2002-07-11 2004-03-25 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
WO2012073302A1 (ja) 2010-11-29 2012-06-07 トヨタ自動車株式会社 半導体装置
JP2018026511A (ja) 2016-08-12 2018-02-15 トヨタ自動車株式会社 半導体装置とその製造方法
JP2018037684A (ja) 2015-03-10 2018-03-08 三菱電機株式会社 パワー半導体装置
JP2018085480A (ja) 2016-11-25 2018-05-31 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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JP2004096061A (ja) 2002-07-11 2004-03-25 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
WO2012073302A1 (ja) 2010-11-29 2012-06-07 トヨタ自動車株式会社 半導体装置
JP2018037684A (ja) 2015-03-10 2018-03-08 三菱電機株式会社 パワー半導体装置
JP2018026511A (ja) 2016-08-12 2018-02-15 トヨタ自動車株式会社 半導体装置とその製造方法
JP2018085480A (ja) 2016-11-25 2018-05-31 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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