JP7280027B2 - メモリプレーンを含む不揮発性メモリ装置及びその動作方法 - Google Patents

メモリプレーンを含む不揮発性メモリ装置及びその動作方法 Download PDF

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Publication number
JP7280027B2
JP7280027B2 JP2018180268A JP2018180268A JP7280027B2 JP 7280027 B2 JP7280027 B2 JP 7280027B2 JP 2018180268 A JP2018180268 A JP 2018180268A JP 2018180268 A JP2018180268 A JP 2018180268A JP 7280027 B2 JP7280027 B2 JP 7280027B2
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memory
planes
plane
peak power
memory planes
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JP2019075105A (ja
JP2019075105A5 (cg-RX-API-DMAC7.html
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秀 昶 全
相 元 朴
ドン 教 沈
東 勳 郭
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0625—Power saving in storage systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0653—Monitoring storage devices or systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0688—Non-volatile semiconductor memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Memory System (AREA)
  • Read Only Memory (AREA)
JP2018180268A 2017-10-12 2018-09-26 メモリプレーンを含む不揮発性メモリ装置及びその動作方法 Active JP7280027B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020170132752A KR102631350B1 (ko) 2017-10-12 2017-10-12 메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 상기 비휘발성 메모리 장치의 동작 방법
KR10-2017-0132752 2017-10-12

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JP2019075105A JP2019075105A (ja) 2019-05-16
JP2019075105A5 JP2019075105A5 (cg-RX-API-DMAC7.html) 2021-10-28
JP7280027B2 true JP7280027B2 (ja) 2023-05-23

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US (1) US10712955B2 (cg-RX-API-DMAC7.html)
JP (1) JP7280027B2 (cg-RX-API-DMAC7.html)
KR (1) KR102631350B1 (cg-RX-API-DMAC7.html)
CN (1) CN109658967B (cg-RX-API-DMAC7.html)
DE (1) DE102018116927B4 (cg-RX-API-DMAC7.html)

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KR20210073754A (ko) 2019-12-11 2021-06-21 에스케이하이닉스 주식회사 시스템, 컨트롤러 및 시스템의 동작 방법
US11056195B1 (en) * 2020-04-27 2021-07-06 Macronix International Co., Ltd. Nonvolatile memory device and related driving method
US11200001B2 (en) * 2020-05-15 2021-12-14 Micron Technology, Inc. Management of power during memory device reset and initialization
US11385810B2 (en) * 2020-06-30 2022-07-12 Sandisk Technologies Llc Dynamic staggering for programming in nonvolatile memory
JP7467692B2 (ja) 2020-11-26 2024-04-15 長江存儲科技有限責任公司 マルチダイ動作のための動的なピーク電力管理
US11532348B2 (en) * 2020-12-02 2022-12-20 Micron Technology, Inc. Power management across multiple packages of memory dies
US11520497B2 (en) 2020-12-02 2022-12-06 Micron Technology, Inc. Peak power management in a memory device
US12362022B2 (en) * 2022-08-15 2025-07-15 Micron Technology, Inc. Scheduled interrupts for peak power management token ring communication
US12118219B2 (en) 2022-09-06 2024-10-15 SanDisk Technologies, Inc. Asymmetric time division peak power management (TD-PPM) timing windows
US11893253B1 (en) 2022-09-20 2024-02-06 Western Digital Technologies, Inc. Dynamic TD-PPM state and die mapping in multi-NAND channels
US20240152295A1 (en) * 2022-11-08 2024-05-09 Micron Technology, Inc. Peak power management with dynamic data path operation current budget management

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Publication number Publication date
CN109658967A (zh) 2019-04-19
DE102018116927A1 (de) 2019-04-18
JP2019075105A (ja) 2019-05-16
CN109658967B (zh) 2023-08-29
KR20190041319A (ko) 2019-04-22
US10712955B2 (en) 2020-07-14
DE102018116927B4 (de) 2024-11-28
US20190114099A1 (en) 2019-04-18
KR102631350B1 (ko) 2024-01-31

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