JP7275407B1 - 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法 - Google Patents

炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法 Download PDF

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JP7275407B1
JP7275407B1 JP2022558572A JP2022558572A JP7275407B1 JP 7275407 B1 JP7275407 B1 JP 7275407B1 JP 2022558572 A JP2022558572 A JP 2022558572A JP 2022558572 A JP2022558572 A JP 2022558572A JP 7275407 B1 JP7275407 B1 JP 7275407B1
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schottky
trench
silicon carbide
semiconductor device
layer
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JPWO2023127023A5 (https=
JPWO2023127023A1 (https=
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基 吉田
貴亮 富永
裕 福井
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/021—Manufacture or treatment of two-electrode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

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JP2022558572A 2021-12-27 2021-12-27 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法 Active JP7275407B1 (ja)

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PCT/JP2021/048577 WO2023127023A1 (ja) 2021-12-27 2021-12-27 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法

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JP7275407B1 true JP7275407B1 (ja) 2023-05-17
JPWO2023127023A1 JPWO2023127023A1 (https=) 2023-07-06
JPWO2023127023A5 JPWO2023127023A5 (https=) 2023-11-29

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117293191B (zh) * 2023-11-24 2024-03-08 山东大学 一种版图结构、半导体器件和其制造方法
CN117673158A (zh) * 2024-01-31 2024-03-08 深圳天狼芯半导体有限公司 碳化硅mosfet及其制备方法、芯片

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000040742A (ja) * 1998-06-22 2000-02-08 Stmicroelectronics Inc ダマスク方法による銀メタリゼ―ション
JP2009170861A (ja) * 2008-01-11 2009-07-30 Young Joo Oh 金属キャパシタ及びその製造方法
JP2010129585A (ja) * 2008-11-25 2010-06-10 Toyota Motor Corp 半導体装置の製造方法
JP2010251719A (ja) * 2009-03-23 2010-11-04 Fuji Electric Systems Co Ltd 半導体装置の製造方法
WO2014156791A1 (ja) * 2013-03-29 2014-10-02 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2016103649A (ja) * 2015-12-17 2016-06-02 ローム株式会社 ＳｉＣ電界効果トランジスタ
JP2017126604A (ja) * 2016-01-12 2017-07-20 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機
WO2021014570A1 (ja) * 2019-07-23 2021-01-28 三菱電機株式会社 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法
JP2021180294A (ja) * 2020-05-15 2021-11-18 株式会社デンソー 半導体装置およびその製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000040742A (ja) * 1998-06-22 2000-02-08 Stmicroelectronics Inc ダマスク方法による銀メタリゼ―ション
JP2009170861A (ja) * 2008-01-11 2009-07-30 Young Joo Oh 金属キャパシタ及びその製造方法
JP2010129585A (ja) * 2008-11-25 2010-06-10 Toyota Motor Corp 半導体装置の製造方法
JP2010251719A (ja) * 2009-03-23 2010-11-04 Fuji Electric Systems Co Ltd 半導体装置の製造方法
WO2014156791A1 (ja) * 2013-03-29 2014-10-02 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2016103649A (ja) * 2015-12-17 2016-06-02 ローム株式会社 ＳｉＣ電界効果トランジスタ
JP2017126604A (ja) * 2016-01-12 2017-07-20 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機
WO2021014570A1 (ja) * 2019-07-23 2021-01-28 三菱電機株式会社 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法
JP2021180294A (ja) * 2020-05-15 2021-11-18 株式会社デンソー 半導体装置およびその製造方法

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