JPWO2023127023A1 - - Google Patents
Info
- Publication number
- JPWO2023127023A1 JPWO2023127023A1 JP2022558572A JP2022558572A JPWO2023127023A1 JP WO2023127023 A1 JPWO2023127023 A1 JP WO2023127023A1 JP 2022558572 A JP2022558572 A JP 2022558572A JP 2022558572 A JP2022558572 A JP 2022558572A JP WO2023127023 A1 JPWO2023127023 A1 JP WO2023127023A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/021—Manufacture or treatment of two-electrode devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/048577 WO2023127023A1 (ja) | 2021-12-27 | 2021-12-27 | 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP7275407B1 JP7275407B1 (ja) | 2023-05-17 |
| JPWO2023127023A1 true JPWO2023127023A1 (https=) | 2023-07-06 |
| JPWO2023127023A5 JPWO2023127023A5 (https=) | 2023-11-29 |
Family
ID=86332454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022558572A Active JP7275407B1 (ja) | 2021-12-27 | 2021-12-27 | 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7275407B1 (https=) |
| WO (1) | WO2023127023A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117293191B (zh) * | 2023-11-24 | 2024-03-08 | 山东大学 | 一种版图结构、半导体器件和其制造方法 |
| CN117673158A (zh) * | 2024-01-31 | 2024-03-08 | 深圳天狼芯半导体有限公司 | 碳化硅mosfet及其制备方法、芯片 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100194A (en) * | 1998-06-22 | 2000-08-08 | Stmicroelectronics, Inc. | Silver metallization by damascene method |
| US8203823B2 (en) * | 2008-01-11 | 2012-06-19 | Oh Young Joo | Metal capacitor and manufacturing method thereof |
| JP2010129585A (ja) * | 2008-11-25 | 2010-06-10 | Toyota Motor Corp | 半導体装置の製造方法 |
| JP5707709B2 (ja) * | 2009-03-23 | 2015-04-30 | 富士電機株式会社 | 半導体装置の製造方法 |
| WO2014156791A1 (ja) * | 2013-03-29 | 2014-10-02 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6168370B2 (ja) * | 2015-12-17 | 2017-07-26 | ローム株式会社 | ＳｉＣ電界効果トランジスタ |
| JP6584966B2 (ja) * | 2016-01-12 | 2019-10-02 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機 |
| WO2021014570A1 (ja) * | 2019-07-23 | 2021-01-28 | 三菱電機株式会社 | 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法 |
| JP7443926B2 (ja) * | 2020-05-15 | 2024-03-06 | 株式会社デンソー | 半導体装置およびその製造方法 |
-
2021
- 2021-12-27 WO PCT/JP2021/048577 patent/WO2023127023A1/ja not_active Ceased
- 2021-12-27 JP JP2022558572A patent/JP7275407B1/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP7275407B1 (ja) | 2023-05-17 |
| WO2023127023A1 (ja) | 2023-07-06 |
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