JP7260863B2 - 強誘電性薄膜、それを用いた電子素子および強誘電性薄膜の製造方法 - Google Patents
強誘電性薄膜、それを用いた電子素子および強誘電性薄膜の製造方法 Download PDFInfo
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- JP7260863B2 JP7260863B2 JP2021567693A JP2021567693A JP7260863B2 JP 7260863 B2 JP7260863 B2 JP 7260863B2 JP 2021567693 A JP2021567693 A JP 2021567693A JP 2021567693 A JP2021567693 A JP 2021567693A JP 7260863 B2 JP7260863 B2 JP 7260863B2
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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Description
(実施形態1)
(実施例1~5および比較例1~10)
Scのスパッタリングターゲット材(濃度:99.99%)
Alのスパッタリングターゲット材(濃度:99.999%)
スパッタリングガス:N2(純度:99.99995%以上)
基板加熱温度:400℃~500℃
スパッタ装置:BC3263(アルバック社製)
Scのスパッタリングターゲット材(濃度:99.99%)
Alのスパッタリングターゲット材(濃度:99.999%)
スパッタリングガス:N2(純度:99.99995%以上)とAr(純度:99.9999%以上)の混合ガス(混合比 40:60)
基板加熱温度:300℃~600℃
(実施例6~8)
(実施形態2)
(実施例9~13)
Scのスパッタリングターゲット材(濃度:99.99%)
Alのスパッタリングターゲット材(濃度:99.999%)
スパッタリングガス:N2(純度:99.99995%以上)
基板加熱温度:20℃~30℃
(他の実施形態)
(実施例14~24)
(実施例25~27)
Alのスパッタリングターゲット材(濃度:99.999%)
スパッタリングガスに用いた気体:N2(純度:99.99995%以上)、Ar(純度:99.9999%以上)
スパッタリングガスの圧力:0.667Pa
20、20A Pt(111)層
30 TiO2層
30A ITO層
40 SiO2層
40A 基材(Substrate)
50 Si基板
Claims (19)
- 化学式M11-XM2XNで表される強誘電性を有する強誘電性薄膜であって、
M1はAlおよびGaから選ばれる少なくとも1つの元素であり、M2はMg、Sc、YbおよびNbから選ばれる少なくとも1つの元素であり、Xは0以上で、1以下の範囲にあり、
結晶構造がウルツ鉱型であり、
膜厚が1nm~300nmの範囲にあることを特徴とする強誘電性薄膜。 - 残留分極値が50μC/cm2以上で、200μC/cm2以下の範囲にあることを特徴とする請求項1に記載の強誘電性薄膜。
- 残留分極値が130μC/cm2以上で、150μC/cm2以下の範囲にあることを特徴とする請求項1に記載の強誘電性薄膜。
- 残留分極値が3μC/cm2以上で、150μC/cm2以下の範囲にあることを特徴とする請求項1に記載の強誘電性薄膜。
- 残留分極値が2μC/cm2以上で、20μC/cm2以下の範囲にあることを特徴とする請求項1に記載の強誘電性薄膜。
- M1はAlであり、M2はScであり、Xは0より大きく、0.219以下の範囲にあることを特徴とする請求項1~5の何れか1項に記載の強誘電性薄膜。
- M1はAlであり、M2はScであり、Xは0.065以上で、0.219以下の範囲にあることを特徴とする請求項1~5の何れか1項に記載の強誘電性薄膜。
- M1はAlであり、M2はScであり、Xは0.16以上で、0.219以下の範囲にあることを特徴とする請求項1~5の何れか1項に記載の強誘電性薄膜。
- M1はAlであり、M2はMg1-YNbYであり、Xは0以上で、1以下の範囲にあり、Yは0以上で、1以下の範囲にあることを特徴とする請求項1~5の何れか1項に記載の強誘電性薄膜。
- M1はGaであり、M2はScであり、Xは0以上で、1以下の範囲にあることを特徴とする請求項1~5の何れか1項に記載の強誘電性薄膜。
- M1はAlであり、M2はYbであり、Xは0以上で、1以下の範囲にあることを特徴とする請求項1~5の何れか1項に記載の強誘電性薄膜。
- M1はGaであり、Xが0であることを特徴とする請求項1~5の何れか1項に記載の強誘電性薄膜。
- 膜厚が1nm~200nmの範囲にあることを特徴とする請求項1~13の何れか1項に記載の強誘電性薄膜。
- 膜厚が1nm~100nmの範囲にあることを特徴とする請求項1~13の何れか1項に記載の強誘電性薄膜。
- 膜厚が20nm~80nmの範囲にあることを特徴とする請求項1~13の何れか1項に記載の強誘電性薄膜。
- 請求項1~16の何れか1項に記載の強誘電性薄膜が、使用可能上限温度が50℃~700℃の範囲にある低耐熱性基材上に設けられていることを特徴とする強誘電性薄膜。
- 請求項1~17の何れか1項に記載の強誘電性薄膜を用いた電子素子。
- スパッタ法を用いて、請求項1~17の何れか1項に記載の強誘電性薄膜を製造する強誘電性薄膜の製造方法であって、
スパッタリングガスは少なくとも窒素を含み、前記スパッタリングガスに含まれる当該窒素のモル濃度が、0.667~1.0の範囲にあり、
前記スパッタリングガスの圧力が1Pa以下である
ことを特徴とする強誘電性薄膜の製造方法。
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JP2020140024 | 2020-08-21 | ||
JP2020140024 | 2020-08-21 | ||
PCT/JP2020/048846 WO2021132602A1 (ja) | 2019-12-27 | 2020-12-25 | 強誘電性薄膜、それを用いた電子素子および強誘電性薄膜の製造方法 |
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Citations (3)
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JP2000183295A (ja) | 1998-12-16 | 2000-06-30 | Matsushita Electronics Industry Corp | 半導体記憶装置及びその製造方法 |
JP2017201050A (ja) | 2016-05-06 | 2017-11-09 | 学校法人早稲田大学 | 圧電体薄膜及びそれを用いた圧電素子 |
US20190393355A1 (en) | 2018-06-22 | 2019-12-26 | SK Hynix Inc. | Ferroelectric semiconductor device |
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US6048738A (en) * | 1997-03-07 | 2000-04-11 | Sharp Laboratories Of America, Inc. | Method of making ferroelectric memory cell for VLSI RAM array |
WO2013183547A1 (ja) * | 2012-06-05 | 2013-12-12 | 独立行政法人産業技術総合研究所 | 半導体強誘電体記憶トランジスタおよびその製造方法 |
US9679893B2 (en) * | 2015-05-15 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and transistor |
KR20180097377A (ko) * | 2017-02-23 | 2018-08-31 | 에스케이하이닉스 주식회사 | 강유전성 메모리 장치 및 그 제조 방법 |
KR20180111304A (ko) * | 2017-03-31 | 2018-10-11 | 에스케이하이닉스 주식회사 | 강유전성 메모리 장치 |
TWI712171B (zh) * | 2017-06-07 | 2020-12-01 | 聯華電子股份有限公司 | 半導體元件 |
CN109087949A (zh) * | 2017-06-14 | 2018-12-25 | 萨摩亚商费洛储存科技股份有限公司 | 铁电场效应晶体管、铁电内存与数据读写方法及制造方法 |
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JP2000183295A (ja) | 1998-12-16 | 2000-06-30 | Matsushita Electronics Industry Corp | 半導体記憶装置及びその製造方法 |
JP2017201050A (ja) | 2016-05-06 | 2017-11-09 | 学校法人早稲田大学 | 圧電体薄膜及びそれを用いた圧電素子 |
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WO2021132602A1 (ja) | 2021-07-01 |
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