JP7250311B2 - 基板収容部材を備える化学機械的な研磨装置用のキャリアヘッド - Google Patents
基板収容部材を備える化学機械的な研磨装置用のキャリアヘッド Download PDFInfo
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Description
図15は、基板収容部材600のさらに他の実施形態を示す断面図であり、基板収容部材600は、接触部670と底板610との間の外周部の内側面622から内側向きに延びる収容補助フラップ(flap)626を備えている。収容補助フラップ626は、基板収容部材600と同じ物質から成形され、板状のリング状を呈し、基板収容部材600と同時に成形されることが好ましい。収容補助フラップ626の延びた長さqは、5mm~20mmの値を、且つ、厚さは、0.3mm~1mmの値を有してもよい。収容補助フラップ626の先端には、緊締を強固にするためのOリング構造627が形成されてもよい。
図16は、上述した図15の基板収容部材600が円形プレート590を収容した状態を示す断面図である。円形プレート590は、プラスチックや金属のように十分な剛性を有する物質から製作されることが好ましい。円形プレート590は、底板610と収容補助フラップ626との間に嵌入した後、クランプ594がボルト(図示せず)により円形プレート590と緊締されることにより基板収容部材600に固定されてもよい。このとき、外周部620の内径よりも僅かに大きい直径を有する円形プレート590を収容することにより、底板610の垂れ下がりを防ぐことができる。なお、円形プレート590に孔592を形成して流体が底板610に自由に作用できるようにすることが好ましい。図16には、円形プレート590が収容された場合を示しているが、プレートの代わりに環状リングが嵌入してもよい。
図19は、固定フラップ646、648の他の実施形態を示す基板収容部材600の断面図であり、内部固定フラップ646及び内部固定フラップ646の外郭の外部固定フラップ648がそれぞれ内部面614から高さ方向に延びている。図示はしないが、環状のプレートを内部固定フラップ646と外部固定フラップ648との間に嵌入させた後、クランプで固定することにより、基板収容部材600に強固さを与えることができる。このように、底板610の中央領域だけではなく、他の領域にも固定フラップが形成されてもよく、図示はしないが、中央領域及び外郭領域の両方ともに複数の固定フラップが形成されてもよい。
図20は、接触フラップ(flap)700を備えるキャリアヘッド900の断面図である。接触フラップ700は、外周部加圧チャンバ200に流体が流れ込むことを抑えるための部材である。接触フラップ700のフラップ上部730は、同図に示すように、接触対応構造530とクランプ532により緊締されることにより、ベース100の下部に連結される。図示はしないが、フラップ上部730は、ベース100の下部に直接的に連結されてもよい。フラップ上部730からフラップ側部720が下方に延び、フラップ側部720の下端からフラップ下部710が内側向きに延びる。接触フラップ700は、外周部620の内側に、つまり、外周部620が接触フラップ700を囲繞する形状に、隣設されて、フラップ下部710は、底板610のうち外周部620と隣り合う領域と接触する。
図31は、突出構造のさらに他の実施形態を示す断面図であり、突出構造630の表面である側面632に凹凸構造としての溝636が形成されている。溝636が形成されれば、金属製又はプラスチック製の環状リングや円形プレート(図示せず)を嵌入してもよい。溝636の周りよりも僅かに大きい周りを有する環状リングや円形プレートを溝636に嵌入させると、垂れ下がる虞のある底板610を張架することができる。以上においては、側面632に形成された一つの溝636を例にとって説明したが、側面632だけではなく、上面634又は図20に示す曲面の表面633にリングやプレートを支持可能な凹凸構造としての溝や突起が一つ以上形成されてもよい。
Claims (10)
- 基板収容部材を備える化学機械的な研磨装置用のキャリアヘッドであって、
ベースと、基板を収容する外部面及び前記外部面の反対側の内部面を有する底板と、前記底板の周縁から高さ方向に延びる外周部と、前記外周部の外側から枝分かれして前記ベースの下部に連結される緊締部及び前記外周部の内側から枝分かれしている接触部を備える基板収容部材と
前記ベースの下部に連結されて前記接触部との接触面を提供する接触対応構造と、
前記接触部が流体の圧力により前記接触対応構造に密着されることにより、前記緊締部及び前記接触部を壁として形成される外周部加圧チャンバと、
を備えるが、
前記外周部加圧チャンバ内の流体の圧力が前記外周部の内側面に作用する流体の圧力よりも大きいときには、前記外周部加圧チャンバ内の流体が前記外周部の内側面に向かって流れることが抑えられるのに対し、前記外周部の内側面に作用する流体の圧力が前記外周部加圧チャンバ内の流体の圧力よりも大きいときには、前記外周部の内側面に作用する流体が前記外周部加圧チャンバ内に流れるようになっていることを特徴とするキャリアヘッド。 - 前記ベースの下部に連結されるフラップ上部と、前記フラップ上部から下側に向かって延びるフラップ側部及び前記フラップ側部の下端から内側向きに延びるフラップ下部を有する接触フラップをさらに備えるが、
前記接触フラップは、開放された構造を有して、前記外周部の内側に隣り合いて前記フラップ側部が前記接触対応構造と接触し、前記フラップ下部は前記外周部と隣り合う底板と接触することにより、前記接触フラップ内側から前記外周部加圧チャンバに向かっての流体の流れを抑えるようになっていることを特徴とする請求項1に記載のキャリアヘッド。 - 前記外周部の内側に隣り合い、前記ベースの下部に連結されて独立して流体を供給されて膨張するが、外側方向の膨張は前記接触対応構造により抑えられ、内側方向の膨張は前記ベースに連結された障壁構造により抑えられて前記底板の所定の領域と接触することにより、圧力が印加可能なブラダをさらに備えることを特徴とする請求項1に記載のキャリア
ヘッド。 - 前記ブラダの内側に隣り合い、前記ベースの下部に連結されるフラップ上部と、前記フラップ上部から下側に向かって延びるフラップ側部及び前記フラップ側部の下端から内側向きに延びるフラップ下部を有する接触フラップをさらに備えるが、
前記接触フラップは、開放された構造を有して、前記フラップ側部が前記障壁構造に接触し、前記フラップ下部は前記ブラダと隣り合う底板と接触することにより、前記接触フラップ内側から前記ブラダに向かっての流体の流れを抑えるようになっていることを特徴とする請求項3に記載のキャリアヘッド。 - 基板収容部材を備える化学機械的な研磨装置用のキャリアヘッドであって、
ベースと、
基板を収容する外部面及び前記外部面の反対側の内部面を有する底板と、前記底板の周縁から高さ方向に延びる外周部と、前記外周部の外側から枝分かれして前記ベースの下部に連結される緊締部及び前記外周部の内側から枝分かれしている接触部を備えるが、前記外周部と前記内部面とが出会う角部に突出構造が形成されたことを特徴とする基板収容部材と、
前記ベースの下部に連結されて前記接触部との接触面を提供する接触対応構造と、
前記接触部が流体の圧力により前記接触対応構造に密着されることにより前記緊締部及び前記接触部を壁として形成される外周部加圧チャンバと、
を備えるが、
前記外周部加圧チャンバ内の流体の圧力が前記外周部の内側面に作用する流体の圧力よりも大きいときには、前記外周部加圧チャンバ内の流体が前記外周部の内側面に向かって流れることが抑えられるのに対し、前記外周部の内側面に作用する流体の圧力が前記外周部加圧チャンバ内の流体の圧力よりも大きいときには、前記外周部の内側面に作用する流体が前記外周部加圧チャンバ内に流れるようになっていることを特徴とするキャリアヘッド。 - 前記ベースの下部に連結されるフラップ上部、前記フラップ上部から下側に向かって延びるフラップ側部及び前記フラップ側部の下端から内側向きに延びるフラップ下部を有する接触フラップをさらに備えるが、
前記接触フラップは、開放された構造を有して、前記外周部の内側に隣り合って前記フラップ側部が前記接触対応構造と接触し、前記フラップ下部は前記突出構造と接触することにより前記接触フラップ内側から前記外周部加圧チャンバに向かっての流体の流れを抑えるようになっていることを特徴とする請求項5に記載のキャリアヘッド。 - 前記外周部の内側に隣り合い、前記ベースの下部に連結されて独立して流体を供給されて膨張するが、外側方向の膨張は前記接触対応構造により抑えられ、内側方向の膨張は前記ベースに連結された障壁構造により抑えられ、前記突出構造と接触することにより、圧力が印加可能なブラダをさらに備えることを特徴とする請求項5に記載のキャリアヘッド。
- 前記ブラダの内側に隣り合い、前記ベースの下部に連結されるフラップ上部と、前記フラップ上部から下側に向かって延びるフラップ側部及び前記フラップ側部の下端から内側向きに延びるフラップ下部を有する接触フラップをさらに備えるが、
前記接触フラップは、開放された構造を有して、前記フラップ側部が前記障壁構造に接触し、前記フラップ下部は前記ブラダと隣り合う底板と接触することにより、前記接触フラップ内側から前記ブラダに向かっての流体の流れを抑えるようになっていることを特徴とする請求項7に記載のキャリアヘッド。 - 接触対応構造を備えた化学機械的な研磨装置用のキャリアヘッドの基板収容部材であって、
基板を収容する外部面及び前記外部面の反対側の内部面を有する底板と、
前記底板の周縁から高さ方向に延びる外周部と、
前記外周部の外側から枝分かれしている緊締部と、
前記外周部の内側から枝分かれしている接触部と、
を備え、
前記接触部は、前記接触対応構造と接触をなすように、底板に対する垂直方向を基準として0°より大きく90°より小さい値を有し、内側に傾いたことを特徴とする基板収容部材。 - 接触対応構造を備えた化学機械的な研磨装置用のキャリアヘッドの基板収容部材であって、
基板を収容する外部面及び前記外部面の反対側の内部面を有する底板と、
前記底板の周縁から高さ方向に延びる外周部と、
前記外周部の外側から枝分かれしている緊締部と、
前記接触対応構造と接触をなすように、前記外周部の内側から枝分かれしている接触部と、
前記外周部と前記内部面とが出会う角部に形成された突出構造と、
前記突出構造の表面から内側向きに延びる収容補助フラップと、
を備えることを特徴とする基板収容部材。
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Publication number | Priority date | Publication date | Assignee | Title |
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KR102119298B1 (ko) * | 2017-01-04 | 2020-06-04 | 강준모 | 화학기계적연마장치 캐리어헤드용 기판수용부재 |
KR102052878B1 (ko) * | 2017-12-01 | 2019-12-10 | 주식회사 케이씨텍 | 화학 기계적 연마 장치의 캐리어 헤드 및 이에 사용되는 멤브레인 |
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US11325223B2 (en) * | 2019-08-23 | 2022-05-10 | Applied Materials, Inc. | Carrier head with segmented substrate chuck |
WO2022103583A1 (en) * | 2020-11-10 | 2022-05-19 | Applied Materials, Inc. | Polishing head with local wafer pressure |
CN112792725B (zh) * | 2021-02-03 | 2022-09-30 | 华海清科股份有限公司 | 一种用于化学机械抛光的柔性膜、承载头及抛光设备 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001054854A (ja) | 1999-07-09 | 2001-02-27 | Applied Materials Inc | 加圧可能な袋状部を有するキャリアヘッド |
US20120309275A1 (en) | 2011-05-31 | 2012-12-06 | K.C. Tech Co., Ltd. | Membrane assembly and carrier head having the membrane assembly |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09119408A (ja) * | 1995-10-23 | 1997-05-06 | Nok Corp | ダイアフラムアクチュエータ |
US5957751A (en) * | 1997-05-23 | 1999-09-28 | Applied Materials, Inc. | Carrier head with a substrate detection mechanism for a chemical mechanical polishing system |
US6361419B1 (en) * | 2000-03-27 | 2002-03-26 | Applied Materials, Inc. | Carrier head with controllable edge pressure |
US6447379B1 (en) * | 2000-03-31 | 2002-09-10 | Speedfam-Ipec Corporation | Carrier including a multi-volume diaphragm for polishing a semiconductor wafer and a method therefor |
US6540592B1 (en) * | 2000-06-29 | 2003-04-01 | Speedfam-Ipec Corporation | Carrier head with reduced moment wear ring |
US7137874B1 (en) * | 2000-11-21 | 2006-11-21 | Memc Electronic Materials, Spa | Semiconductor wafer, polishing apparatus and method |
KR100433669B1 (ko) * | 2001-07-05 | 2004-05-31 | 사단법인 고등기술연구원 연구조합 | 상압 플라즈마를 이용한 분말의 재활용 장치 |
JP4107835B2 (ja) * | 2001-12-06 | 2008-06-25 | 株式会社荏原製作所 | 基板保持装置及びポリッシング装置 |
US6755726B2 (en) * | 2002-03-25 | 2004-06-29 | United Microelectric Corp. | Polishing head with a floating knife-edge |
JP4718107B2 (ja) * | 2003-05-20 | 2011-07-06 | 株式会社荏原製作所 | 基板保持装置及び研磨装置 |
KR100634450B1 (ko) * | 2005-01-06 | 2006-10-16 | 삼성전자주식회사 | 화학적 기계적 연마 장치 및 이에 사용되는 플레이튼 |
SG187782A1 (en) * | 2010-08-06 | 2013-03-28 | Applied Materials Inc | Substrate edge tuning with retaining ring |
JP5648954B2 (ja) * | 2010-08-31 | 2015-01-07 | 不二越機械工業株式会社 | 研磨装置 |
KR101941586B1 (ko) | 2011-01-03 | 2019-01-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 압력 제어되는 폴리싱 플래튼 |
KR101239372B1 (ko) * | 2011-07-18 | 2013-03-05 | 주식회사 케이씨텍 | 리테이너 링의 유지 보수가 용이한 캐리어 헤드 |
KR101597870B1 (ko) * | 2012-04-02 | 2016-02-25 | 강준모 | 화학 기계적 연마 장치 용 캐리어 헤드 |
KR20140067325A (ko) * | 2012-11-26 | 2014-06-05 | 강준모 | 화학 기계적 연마 장치 용 캐리어 헤드 |
KR101629161B1 (ko) * | 2013-04-18 | 2016-06-21 | 주식회사 케이씨텍 | 화학 기계적 연마 장치의 캐리어 헤드 및 이에 사용되는 멤브레인 |
KR101592216B1 (ko) * | 2014-03-03 | 2016-02-05 | 주식회사 케이씨텍 | 화학 기계적 연마 장치의 캐리어 헤드의 멤브레인 |
TWI628043B (zh) * | 2014-03-27 | 2018-07-01 | 日商荏原製作所股份有限公司 | 彈性膜、基板保持裝置、及研磨裝置 |
KR101586429B1 (ko) * | 2014-08-01 | 2016-01-18 | 제타텍 주식회사 | 탄성 보강 유니트를 포함하는 리테이너링을 갖는 화학기계적 연마장치 |
KR101589445B1 (ko) * | 2014-09-23 | 2016-01-29 | 주식회사 케이씨텍 | 화학 기계적 연마 장치용 캐리어 헤드의 멤브레인 및 이를 구비한 캐리어 헤드 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001054854A (ja) | 1999-07-09 | 2001-02-27 | Applied Materials Inc | 加圧可能な袋状部を有するキャリアヘッド |
US20120309275A1 (en) | 2011-05-31 | 2012-12-06 | K.C. Tech Co., Ltd. | Membrane assembly and carrier head having the membrane assembly |
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