JP7237920B2 - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法 Download PDF

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Publication number
JP7237920B2
JP7237920B2 JP2020500969A JP2020500969A JP7237920B2 JP 7237920 B2 JP7237920 B2 JP 7237920B2 JP 2020500969 A JP2020500969 A JP 2020500969A JP 2020500969 A JP2020500969 A JP 2020500969A JP 7237920 B2 JP7237920 B2 JP 7237920B2
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Japan
Prior art keywords
semiconductor layer
layer
lift
type semiconductor
solar cell
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JP2020500969A
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English (en)
Japanese (ja)
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JPWO2019163784A1 (ja
Inventor
邦裕 中野
良太 三島
崇 口山
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Kaneka Corp
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Kaneka Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
JP2020500969A 2018-02-23 2019-02-19 太陽電池の製造方法 Active JP7237920B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018030796 2018-02-23
JP2018030796 2018-02-23
PCT/JP2019/006133 WO2019163784A1 (ja) 2018-02-23 2019-02-19 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPWO2019163784A1 JPWO2019163784A1 (ja) 2021-02-04
JP7237920B2 true JP7237920B2 (ja) 2023-03-13

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JP2020500969A Active JP7237920B2 (ja) 2018-02-23 2019-02-19 太陽電池の製造方法

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JP (1) JP7237920B2 (zh)
CN (1) CN111742416B (zh)
WO (1) WO2019163784A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021201030A1 (ja) * 2020-03-30 2021-10-07 株式会社カネカ 太陽電池および太陽電池の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012132655A1 (ja) 2011-03-25 2012-10-04 三洋電機株式会社 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法
JP2013120863A (ja) 2011-12-08 2013-06-17 Sharp Corp 太陽電池の製造方法
WO2016068711A2 (en) 2014-10-31 2016-05-06 Technische Universiteit Delft Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions
WO2016143698A1 (ja) 2015-03-11 2016-09-15 シャープ株式会社 光電変換素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04260338A (ja) * 1991-02-14 1992-09-16 Mitsubishi Electric Corp 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012132655A1 (ja) 2011-03-25 2012-10-04 三洋電機株式会社 裏面接合型の光電変換素子及び裏面接合型の光電変換素子の製造方法
JP2013120863A (ja) 2011-12-08 2013-06-17 Sharp Corp 太陽電池の製造方法
WO2016068711A2 (en) 2014-10-31 2016-05-06 Technische Universiteit Delft Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions
WO2016143698A1 (ja) 2015-03-11 2016-09-15 シャープ株式会社 光電変換素子

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Publication number Publication date
CN111742416B (zh) 2024-03-19
CN111742416A (zh) 2020-10-02
WO2019163784A1 (ja) 2019-08-29
JPWO2019163784A1 (ja) 2021-02-04

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