JP7237785B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP7237785B2
JP7237785B2 JP2019171102A JP2019171102A JP7237785B2 JP 7237785 B2 JP7237785 B2 JP 7237785B2 JP 2019171102 A JP2019171102 A JP 2019171102A JP 2019171102 A JP2019171102 A JP 2019171102A JP 7237785 B2 JP7237785 B2 JP 7237785B2
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Prior art keywords
semiconductor device
insulating layer
layer
aluminum
manufacturing
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JP2019171102A
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Japanese (ja)
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JP2021048339A (ja
JP2021048339A5 (cg-RX-API-DMAC7.html
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浩明 高橋
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Priority to JP2019171102A priority Critical patent/JP7237785B2/ja
Priority to US16/815,324 priority patent/US11233023B2/en
Publication of JP2021048339A publication Critical patent/JP2021048339A/ja
Publication of JP2021048339A5 publication Critical patent/JP2021048339A5/ja
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JP2008210832A (ja) 2007-02-23 2008-09-11 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP2012174951A (ja) 2011-02-23 2012-09-10 Sony Corp 半導体装置の製造方法、半導体装置、および電子機器
JP2016122801A (ja) 2014-12-25 2016-07-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2018103147A (ja) 2016-12-28 2018-07-05 オルガノ株式会社 希釈液製造装置および希釈液製造方法
JP2019040975A (ja) 2017-08-24 2019-03-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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JP2697952B2 (ja) 1990-11-15 1998-01-19 シャープ株式会社 半導体装置の製造方法
JP2004241458A (ja) 2003-02-04 2004-08-26 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP2005150508A (ja) 2003-11-18 2005-06-09 Sanyo Electric Co Ltd 半導体装置の製造方法
US8207052B2 (en) * 2009-01-16 2012-06-26 Globalfoundries Singapore Pte. Ltd. Method to prevent corrosion of bond pad structure

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JP2008210832A (ja) 2007-02-23 2008-09-11 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP2012174951A (ja) 2011-02-23 2012-09-10 Sony Corp 半導体装置の製造方法、半導体装置、および電子機器
JP2016122801A (ja) 2014-12-25 2016-07-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2018103147A (ja) 2016-12-28 2018-07-05 オルガノ株式会社 希釈液製造装置および希釈液製造方法
JP2019040975A (ja) 2017-08-24 2019-03-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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