JP2021048339A5 - - Google Patents
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- Publication number
- JP2021048339A5 JP2021048339A5 JP2019171102A JP2019171102A JP2021048339A5 JP 2021048339 A5 JP2021048339 A5 JP 2021048339A5 JP 2019171102 A JP2019171102 A JP 2019171102A JP 2019171102 A JP2019171102 A JP 2019171102A JP 2021048339 A5 JP2021048339 A5 JP 2021048339A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- semiconductor device
- layer
- aluminum
- aluminum layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 10
- 229910052782 aluminium Inorganic materials 0.000 claims 10
- 238000000034 method Methods 0.000 claims 6
- 239000007788 liquid Substances 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 239000000243 solution Substances 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000003513 alkali Substances 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019171102A JP7237785B2 (ja) | 2019-09-20 | 2019-09-20 | 半導体装置の製造方法 |
| US16/815,324 US11233023B2 (en) | 2019-09-20 | 2020-03-11 | Semiconductor device and method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019171102A JP7237785B2 (ja) | 2019-09-20 | 2019-09-20 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021048339A JP2021048339A (ja) | 2021-03-25 |
| JP2021048339A5 true JP2021048339A5 (cg-RX-API-DMAC7.html) | 2021-10-21 |
| JP7237785B2 JP7237785B2 (ja) | 2023-03-13 |
Family
ID=74876596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019171102A Active JP7237785B2 (ja) | 2019-09-20 | 2019-09-20 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US11233023B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP7237785B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7567702B2 (ja) * | 2021-07-16 | 2024-10-16 | 株式会社デンソー | 半導体装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2697952B2 (ja) | 1990-11-15 | 1998-01-19 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2004241458A (ja) | 2003-02-04 | 2004-08-26 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
| JP2005150508A (ja) | 2003-11-18 | 2005-06-09 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP2008210832A (ja) * | 2007-02-23 | 2008-09-11 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
| US8207052B2 (en) * | 2009-01-16 | 2012-06-26 | Globalfoundries Singapore Pte. Ltd. | Method to prevent corrosion of bond pad structure |
| JP5909852B2 (ja) * | 2011-02-23 | 2016-04-27 | ソニー株式会社 | 半導体装置の製造方法 |
| JP2016122801A (ja) * | 2014-12-25 | 2016-07-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP6777534B2 (ja) * | 2016-12-28 | 2020-10-28 | オルガノ株式会社 | 希釈液製造装置および希釈液製造方法 |
| JP7027066B2 (ja) * | 2017-08-24 | 2022-03-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
-
2019
- 2019-09-20 JP JP2019171102A patent/JP7237785B2/ja active Active
-
2020
- 2020-03-11 US US16/815,324 patent/US11233023B2/en active Active
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