JP7234205B2 - 基板をパターニングする方法及びフォトレジスト層を増強し、かつ、向上する方法 - Google Patents
基板をパターニングする方法及びフォトレジスト層を増強し、かつ、向上する方法 Download PDFInfo
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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Description
Claims (12)
- 基板をパターニングする方法であって、該方法は、
基板上に下層を設けるステップと、
注入種のイオン注入手順を前記下層に実施するステップであって、前記注入種は、極端紫外線(EUV)範囲の波長での増強された吸収効率を有し、前記注入種は、前記下層の上面付近の上部領域に注入される、ステップと、
前記イオン注入手順の実行に続いて、前記下層上にブランケット・フォトレジスト層を設けるステップと、
前記イオン注入手順の実行に続いて、前記ブランケット・フォトレジスト層をEUV照射に露光するためにパターン化された露光を実行するステップと、を有し、
前記パターン化された露光は、前記イオン注入手順に続いて5時間未満で実行される、方法。 - 前記注入種は、XeまたはSnである、請求項1に記載の方法。
- 前記イオン注入手順を実行するステップは、前記ブランケット・フォトレジスト層の外面の下の深さの関数として、前記注入種の濃度にピークを生成するステップを有する、請求項1に記載の方法。
- 前記注入種は、室温の気体種を含む、請求項1に記載の方法。
- 前記ブランケット・フォトレジスト層の外面の下の深さの関数としての前記注入種の濃度は、少なくとも5nmの深さまで増加する、請求項1に記載の方法。
- 前記イオン注入手順は、前記ブランケット・フォトレジスト層に複数のイオン注入を行って、不均一な深さプロファイルを生成するステップを有する、請求項1に記載の方法。
- 前記EUV範囲の波長が13.5nmである、請求項1に記載の方法。
- フォトレジスト層を増強する方法であって、該方法は、
基板上に下層を設けるステップと、
注入種のイオン注入手順を前記下層に実施するステップであって、前記注入種は、極端紫外線(EUV)範囲の波長での増強された吸収効率を有し、前記増強された吸収効率は、2×106cm2/molより大きく、前記注入種は、前記下層の上面付近の上部領域に注入されるステップと、
前記イオン注入手順の実行に続いて、ブランケット・フォトレジスト層として前記フォトレジスト層を前記下層上に塗布するステップと、を有し、
前記注入種の注入エネルギーが1000 eV未満であり、前記注入種の入射角が、前記基板の平面に対する法線に対して30度より大きい、方法。 - 前記イオン注入手順は、複数のイオン注入手順を含み、注入深さは、前記複数のイオン注入手順の間で変化する、請求項8に記載の方法。
- 前記複数のイオン注入手順は、前記ブランケット・フォトレジスト層内の深さの関数として、前記注入種の不均一な深さプロファイルを生成し、前記注入種の濃度は、前記ブランケット・フォトレジスト層内の深さの関数として増加する、請求項9に記載の方法。
- 前記ブランケット・フォトレジスト層が、金属酸化物粒子を含有する金属酸化物フォトレジストを含む、請求項8に記載の方法。
- フォトレジスト層のパターニングを向上する方法であって、該方法は、
基板上に下層を設けるステップと、
注入種のイオン注入手順を前記下層に実施するステップであって、前記注入種は、極端紫外線(EUV)範囲の波長での増強された吸収効率を有し、前記増強された吸収効率は、2×106cm2/molより大きく、前記注入種は、前記下層の上面付近の上部領域に注入される、ステップと、
前記イオン注入手順の実行に続いて、前記下層上にブランケット・フォトレジスト層として前記フォトレジスト層を塗布するステップと、
EUV放射の露光によって前記ブランケット・フォトレジスト層をパターニングするステップと、を有する方法。
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US201762547418P | 2017-08-18 | 2017-08-18 | |
US62/547,418 | 2017-08-18 | ||
US15/786,806 | 2017-10-18 | ||
US15/786,806 US10545408B2 (en) | 2017-08-18 | 2017-10-18 | Performance improvement of EUV photoresist by ion implantation |
PCT/US2018/046866 WO2019036582A1 (en) | 2017-08-18 | 2018-08-17 | ENHANCING PERFORMANCE OF EUV PHOTOSENSITIVE RESIN BY ION IMPLANTATION |
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JP2020531890A JP2020531890A (ja) | 2020-11-05 |
JP2020531890A5 JP2020531890A5 (ja) | 2021-05-20 |
JP7234205B2 true JP7234205B2 (ja) | 2023-03-07 |
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KR (1) | KR102564263B1 (ja) |
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US10845704B2 (en) * | 2018-10-30 | 2020-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet photolithography method with infiltration for enhanced sensitivity and etch resistance |
JP2022542170A (ja) * | 2019-08-01 | 2022-09-29 | アプライド マテリアルズ インコーポレイテッド | パターニングされた金属酸化物フォトレジストの線量減少 |
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CN102903649A (zh) | 2011-07-28 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | 一种选择离子注入的光刻胶厚度方法 |
JP2013135066A (ja) | 2011-12-26 | 2013-07-08 | Toshiba Corp | パターン形成方法 |
JP2016035582A (ja) | 2013-02-20 | 2016-03-17 | 国立大学法人大阪大学 | レジスト材料 |
WO2015178464A1 (ja) | 2014-05-21 | 2015-11-26 | 国立大学法人大阪大学 | レジストパターン形成方法、レジスト潜像形成装置およびレジスト材料 |
US20170168398A1 (en) | 2015-12-10 | 2017-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photosensitive material and method of lithography |
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JP2020531890A (ja) | 2020-11-05 |
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TW201921431A (zh) | 2019-06-01 |
US20190056914A1 (en) | 2019-02-21 |
CN110945431A (zh) | 2020-03-31 |
US10990014B2 (en) | 2021-04-27 |
US10545408B2 (en) | 2020-01-28 |
KR102564263B1 (ko) | 2023-08-10 |
KR20200033941A (ko) | 2020-03-30 |
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