JP7218262B2 - パターン高さ情報補正システム及びパターン高さ情報の補正方法 - Google Patents

パターン高さ情報補正システム及びパターン高さ情報の補正方法 Download PDF

Info

Publication number
JP7218262B2
JP7218262B2 JP2019166105A JP2019166105A JP7218262B2 JP 7218262 B2 JP7218262 B2 JP 7218262B2 JP 2019166105 A JP2019166105 A JP 2019166105A JP 2019166105 A JP2019166105 A JP 2019166105A JP 7218262 B2 JP7218262 B2 JP 7218262B2
Authority
JP
Japan
Prior art keywords
height information
information
pattern
computer system
correcting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019166105A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021043096A5 (https=
JP2021043096A (ja
Inventor
権史 山崎
博之 新藤
多恵子 柏
竜吾 蔭谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Priority to JP2019166105A priority Critical patent/JP7218262B2/ja
Priority to US16/984,813 priority patent/US11448663B2/en
Priority to KR1020200101574A priority patent/KR102538927B1/ko
Priority to TW109128921A priority patent/TWI793442B/zh
Publication of JP2021043096A publication Critical patent/JP2021043096A/ja
Publication of JP2021043096A5 publication Critical patent/JP2021043096A5/ja
Application granted granted Critical
Publication of JP7218262B2 publication Critical patent/JP7218262B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
    • G01Q30/04—Display or data processing devices
    • G01Q30/06—Display or data processing devices for error compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radiology & Medical Imaging (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Electromagnetism (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Image Processing (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
JP2019166105A 2019-09-12 2019-09-12 パターン高さ情報補正システム及びパターン高さ情報の補正方法 Active JP7218262B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019166105A JP7218262B2 (ja) 2019-09-12 2019-09-12 パターン高さ情報補正システム及びパターン高さ情報の補正方法
US16/984,813 US11448663B2 (en) 2019-09-12 2020-08-04 Pattern height information correction system and pattern height information correction method
KR1020200101574A KR102538927B1 (ko) 2019-09-12 2020-08-13 패턴 높이 정보 보정 시스템 및 패턴 높이 정보의 보정 방법
TW109128921A TWI793442B (zh) 2019-09-12 2020-08-25 圖案高度資訊修正系統及圖案高度資訊的修正方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019166105A JP7218262B2 (ja) 2019-09-12 2019-09-12 パターン高さ情報補正システム及びパターン高さ情報の補正方法

Publications (3)

Publication Number Publication Date
JP2021043096A JP2021043096A (ja) 2021-03-18
JP2021043096A5 JP2021043096A5 (https=) 2022-03-25
JP7218262B2 true JP7218262B2 (ja) 2023-02-06

Family

ID=74864521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019166105A Active JP7218262B2 (ja) 2019-09-12 2019-09-12 パターン高さ情報補正システム及びパターン高さ情報の補正方法

Country Status (4)

Country Link
US (1) US11448663B2 (https=)
JP (1) JP7218262B2 (https=)
KR (1) KR102538927B1 (https=)
TW (1) TWI793442B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102887597B1 (ko) * 2020-08-12 2025-11-18 주식회사 히타치하이테크 표면 해석 장치
CN113687365B (zh) * 2021-06-30 2023-12-22 云南昆钢电子信息科技有限公司 一种基于类平面多高度层轮廓识别及坐标计算方法及系统
US11662324B1 (en) * 2022-03-18 2023-05-30 Applied Materials Israel Ltd. Three-dimensional surface metrology of wafers
WO2024014185A1 (ja) * 2022-07-11 2024-01-18 株式会社島津製作所 画像処理方法、画像処理装置、走査型プローブ顕微鏡、およびプログラム
US12253472B2 (en) * 2022-11-07 2025-03-18 Globalfoundries U.S. Inc. System and method for detecting a defect in a specimen
WO2025022875A1 (ja) * 2023-07-25 2025-01-30 株式会社島津製作所 画像処理方法、プログラム、画像処理装置、および走査型プローブ顕微鏡

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3121619B2 (ja) * 1990-12-11 2001-01-09 松下電器産業株式会社 走査型トンネル顕微鏡の画像処理方法
JPH06147821A (ja) * 1992-11-12 1994-05-27 Hitachi Constr Mach Co Ltd 走査型探針顕微鏡像の傾斜補正方法
JPH11142416A (ja) * 1997-11-12 1999-05-28 Olympus Optical Co Ltd 走査型プローブ顕微鏡における測定データの補正方法
JP2002031589A (ja) 2000-07-14 2002-01-31 Shimadzu Corp 走査型プローブ顕微鏡
JP2004022655A (ja) * 2002-06-13 2004-01-22 Canon Inc 半導体露光装置及びその制御方法、並びに半導体デバイスの製造方法
JP2004144610A (ja) 2002-10-24 2004-05-20 Renesas Technology Corp ウェハ欠陥検査装置
US7406860B2 (en) * 2006-04-28 2008-08-05 Seagate Technology Llc Atomic force microscopy scanning and image processing
JP2011043458A (ja) * 2009-08-24 2011-03-03 Hitachi High-Technologies Corp パターン寸法計測方法及びそのシステム
GB2500670A (en) 2012-03-29 2013-10-02 Ibm Method of fabrication of a micro-optics device with curved surface defects
JP2014103353A (ja) 2012-11-22 2014-06-05 Samsung R&D Institute Japan Co Ltd 認識装置、認識方法、実装装置及び実装方法
WO2015085316A1 (en) * 2013-12-07 2015-06-11 Bruker Nano, Inc. Force measurement with real-time baseline determination
EP3441773B1 (en) * 2017-08-11 2022-11-23 Anton Paar GmbH Characterizing a height profile of a sample by side view imaging
CN110068707B (zh) * 2018-01-24 2021-08-10 中国科学院沈阳自动化研究所 一种基于二维反馈控制的afm三维测量方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Hal Edwards，Vertical metrology using scanning-probe microscopes : Imaging distortions and measurement repeatability，JOURNAL OF APPLIED PHYSICS，Vol.83 , No.8，1998年04月15日，3952-3971

Also Published As

Publication number Publication date
US11448663B2 (en) 2022-09-20
TWI793442B (zh) 2023-02-21
TW202111665A (zh) 2021-03-16
US20210080485A1 (en) 2021-03-18
JP2021043096A (ja) 2021-03-18
KR102538927B1 (ko) 2023-06-01
KR20210031602A (ko) 2021-03-22

Similar Documents

Publication Publication Date Title
JP7218262B2 (ja) パターン高さ情報補正システム及びパターン高さ情報の補正方法
JP5525421B2 (ja) 画像撮像装置および画像撮像方法
JP5500871B2 (ja) テンプレートマッチング用テンプレート作成方法、及びテンプレート作成装置
US7888638B2 (en) Method and apparatus for measuring dimension of circuit pattern formed on substrate by using scanning electron microscope
JP5030906B2 (ja) 走査荷電粒子顕微鏡を用いたパノラマ画像合成方法およびその装置
JP5164598B2 (ja) レビュー方法、およびレビュー装置
WO2020250373A1 (ja) 画像処理プログラム、画像処理装置および画像処理方法
JP2009252959A (ja) パターン検査装置、パターン検査方法および半導体装置の製造方法
JP2002131253A (ja) 基板の欠陥検査方法および基板の欠陥検査システム
TWI813618B (zh) 掃描電子顯微鏡的自動對焦方法
JP2006145269A (ja) 欠陥レビュー装置及び欠陥レビュー方法
JPWO2003098149A1 (ja) 試料寸法測長方法及び走査電子顕微鏡
JP6850234B2 (ja) 荷電粒子線装置
JP5315040B2 (ja) 荷電粒子線装置及び荷電粒子線装置による画像取得条件決定方法
US9053904B2 (en) Image quality adjusting method, non-transitory computer-readable recording medium, and electron microscope
US10515779B2 (en) Imaging system and imaging method
TWI749616B (zh) 帶電粒子束系統，及疊合錯位量測定方法
KR101345619B1 (ko) 낮은 대비 반도체 소자의 명시야 이미징을 위한 패턴 인식매칭
JP2005338102A (ja) 試料寸法測長方法及び走査電子顕微鏡
JP6078356B2 (ja) テンプレートマッチング条件設定装置、及び荷電粒子線装置
US12422386B2 (en) Pattern measurement device
JP6138460B2 (ja) 荷電粒子線装置
JP2009110969A (ja) パターン寸法測定方法、及びパターン寸法測定装置
JP3168032B2 (ja) 電子ビーム露光装置及び描画パターンを検査する方法
WO2022249489A1 (ja) 深さ計測装置、深さ計測システム及び深さ指標値算出方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220316

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220316

TRDD Decision of grant or rejection written
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20221221

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221227

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230125

R150 Certificate of patent or registration of utility model

Ref document number: 7218262

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150