KR102538927B1 - 패턴 높이 정보 보정 시스템 및 패턴 높이 정보의 보정 방법 - Google Patents

패턴 높이 정보 보정 시스템 및 패턴 높이 정보의 보정 방법 Download PDF

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KR102538927B1
KR102538927B1 KR1020200101574A KR20200101574A KR102538927B1 KR 102538927 B1 KR102538927 B1 KR 102538927B1 KR 1020200101574 A KR1020200101574 A KR 1020200101574A KR 20200101574 A KR20200101574 A KR 20200101574A KR 102538927 B1 KR102538927 B1 KR 102538927B1
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pattern
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computer system
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KR20210031602A (ko
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겐지 야마사키
히로유키 신도
다에코 가시와
류고 가게타니
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주식회사 히타치하이테크
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q30/00Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
    • G01Q30/04Display or data processing devices
    • G01Q30/06Display or data processing devices for error compensation
    • H01L22/12
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/04Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01QSCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38Probes, their manufacture, or their related instrumentation, e.g. holders
    • H01L22/30
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radiology & Medical Imaging (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Electromagnetism (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Image Processing (AREA)
KR1020200101574A 2019-09-12 2020-08-13 패턴 높이 정보 보정 시스템 및 패턴 높이 정보의 보정 방법 Active KR102538927B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019166105A JP7218262B2 (ja) 2019-09-12 2019-09-12 パターン高さ情報補正システム及びパターン高さ情報の補正方法
JPJP-P-2019-166105 2019-09-12

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Publication Number Publication Date
KR20210031602A KR20210031602A (ko) 2021-03-22
KR102538927B1 true KR102538927B1 (ko) 2023-06-01

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KR1020200101574A Active KR102538927B1 (ko) 2019-09-12 2020-08-13 패턴 높이 정보 보정 시스템 및 패턴 높이 정보의 보정 방법

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US (1) US11448663B2 (https=)
JP (1) JP7218262B2 (https=)
KR (1) KR102538927B1 (https=)
TW (1) TWI793442B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112020007290T5 (de) * 2020-08-12 2023-04-20 Hitachi High-Tech Corporation Oberflächenanalysevorrichtung
CN113687365B (zh) * 2021-06-30 2023-12-22 云南昆钢电子信息科技有限公司 一种基于类平面多高度层轮廓识别及坐标计算方法及系统
US11662324B1 (en) * 2022-03-18 2023-05-30 Applied Materials Israel Ltd. Three-dimensional surface metrology of wafers
WO2024014185A1 (ja) * 2022-07-11 2024-01-18 株式会社島津製作所 画像処理方法、画像処理装置、走査型プローブ顕微鏡、およびプログラム
US12253472B2 (en) * 2022-11-07 2025-03-18 Globalfoundries U.S. Inc. System and method for detecting a defect in a specimen
CN121844213A (zh) * 2023-07-25 2026-04-10 株式会社岛津制作所 图像处理方法、程序、图像处理装置、以及扫描探针显微镜

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040080742A1 (en) 2002-10-24 2004-04-29 Mitsubishi Denki Kabushiki Kaisha Device inspecting for defect on semiconductor wafer surface
US20140141539A1 (en) 2012-11-22 2014-05-22 Samsung Electronics Co., Ltd. Apparatus and method of recognizing an object, and apparatus and method of mounting a semiconductor chip

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP3121619B2 (ja) * 1990-12-11 2001-01-09 松下電器産業株式会社 走査型トンネル顕微鏡の画像処理方法
JPH06147821A (ja) * 1992-11-12 1994-05-27 Hitachi Constr Mach Co Ltd 走査型探針顕微鏡像の傾斜補正方法
JPH11142416A (ja) * 1997-11-12 1999-05-28 Olympus Optical Co Ltd 走査型プローブ顕微鏡における測定データの補正方法
JP2002031589A (ja) 2000-07-14 2002-01-31 Shimadzu Corp 走査型プローブ顕微鏡
JP2004022655A (ja) * 2002-06-13 2004-01-22 Canon Inc 半導体露光装置及びその制御方法、並びに半導体デバイスの製造方法
US7406860B2 (en) * 2006-04-28 2008-08-05 Seagate Technology Llc Atomic force microscopy scanning and image processing
JP2011043458A (ja) * 2009-08-24 2011-03-03 Hitachi High-Technologies Corp パターン寸法計測方法及びそのシステム
GB2500670A (en) 2012-03-29 2013-10-02 Ibm Method of fabrication of a micro-optics device with curved surface defects
CN106030316B (zh) * 2013-12-07 2019-02-19 布鲁克公司 实时基线确定的力测量
EP3441773B1 (en) * 2017-08-11 2022-11-23 Anton Paar GmbH Characterizing a height profile of a sample by side view imaging
CN110068707B (zh) * 2018-01-24 2021-08-10 中国科学院沈阳自动化研究所 一种基于二维反馈控制的afm三维测量方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040080742A1 (en) 2002-10-24 2004-04-29 Mitsubishi Denki Kabushiki Kaisha Device inspecting for defect on semiconductor wafer surface
US20140141539A1 (en) 2012-11-22 2014-05-22 Samsung Electronics Co., Ltd. Apparatus and method of recognizing an object, and apparatus and method of mounting a semiconductor chip

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Publication number Publication date
US11448663B2 (en) 2022-09-20
KR20210031602A (ko) 2021-03-22
JP7218262B2 (ja) 2023-02-06
JP2021043096A (ja) 2021-03-18
TWI793442B (zh) 2023-02-21
US20210080485A1 (en) 2021-03-18
TW202111665A (zh) 2021-03-16

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