JP7206380B2 - マルチビーム粒子ビームシステム、及びマルチビーム粒子ビームシステムを動作させる方法 - Google Patents

マルチビーム粒子ビームシステム、及びマルチビーム粒子ビームシステムを動作させる方法 Download PDF

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JP7206380B2
JP7206380B2 JP2021518111A JP2021518111A JP7206380B2 JP 7206380 B2 JP7206380 B2 JP 7206380B2 JP 2021518111 A JP2021518111 A JP 2021518111A JP 2021518111 A JP2021518111 A JP 2021518111A JP 7206380 B2 JP7206380 B2 JP 7206380B2
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elements
multipole
excitation
particle beam
deflection
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JP2022501794A5 (https=
JP2022501794A (ja
JPWO2020070074A5 (https=
Inventor
ディルク ザイドラー
クリストフ リーデセル
アーネ トマ
ジョルジョ メタリディス
イェルク ヤコビ
ステファン シューベルト
ラルフ レンケ
ウルリッヒ ビアー
ヤンコ サロフ
ゲオルク クリイ
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カール ツァイス マルティセム ゲゼルシヤフト ミット ベシュレンクテル ハフツング
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1475—Scanning means magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1477—Scanning means electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1532—Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electron Beam Exposure (AREA)
  • Powder Metallurgy (AREA)
JP2021518111A 2018-10-01 2019-09-30 マルチビーム粒子ビームシステム、及びマルチビーム粒子ビームシステムを動作させる方法 Active JP7206380B2 (ja)

Priority Applications (1)

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JP2023000167A JP7667403B2 (ja) 2018-10-01 2023-01-04 マルチビーム粒子ビームシステム、及びマルチビーム粒子ビームシステムを動作させる方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018124219.0A DE102018124219A1 (de) 2018-10-01 2018-10-01 Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
DE102018124219.0 2018-10-01
PCT/EP2019/076472 WO2020070074A1 (de) 2018-10-01 2019-09-30 Vielstrahl-teilchenstrahlsystem und verfahren zum betreiben eines solchen

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JP2023000167A Division JP7667403B2 (ja) 2018-10-01 2023-01-04 マルチビーム粒子ビームシステム、及びマルチビーム粒子ビームシステムを動作させる方法

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JP2022501794A JP2022501794A (ja) 2022-01-06
JP2022501794A5 JP2022501794A5 (https=) 2022-08-24
JPWO2020070074A5 JPWO2020070074A5 (https=) 2022-08-24
JP7206380B2 true JP7206380B2 (ja) 2023-01-17

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JP2023000167A Active JP7667403B2 (ja) 2018-10-01 2023-01-04 マルチビーム粒子ビームシステム、及びマルチビーム粒子ビームシステムを動作させる方法

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US (1) US12255040B2 (https=)
EP (2) EP3861565B1 (https=)
JP (2) JP7206380B2 (https=)
KR (2) KR20230135167A (https=)
CN (1) CN113169017B (https=)
DE (1) DE102018124219A1 (https=)
WO (1) WO2020070074A1 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015202172B4 (de) 2015-02-06 2017-01-19 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts
DE102018202428B3 (de) 2018-02-16 2019-05-09 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenmikroskop
DE102018202421B3 (de) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem
WO2019166331A2 (en) 2018-02-27 2019-09-06 Carl Zeiss Microscopy Gmbh Charged particle beam system and method
US10811215B2 (en) 2018-05-21 2020-10-20 Carl Zeiss Multisem Gmbh Charged particle beam system
DE102018115012A1 (de) 2018-06-21 2019-12-24 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102018007455B4 (de) 2018-09-21 2020-07-09 Carl Zeiss Multisem Gmbh Verfahren zum Detektorabgleich bei der Abbildung von Objekten mittels eines Mehrstrahl-Teilchenmikroskops, System sowie Computerprogrammprodukt
DE102018007652B4 (de) 2018-09-27 2021-03-25 Carl Zeiss Multisem Gmbh Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
DE102018124044B3 (de) 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
DE102018124219A1 (de) 2018-10-01 2020-04-02 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
CN111477530B (zh) 2019-01-24 2023-05-05 卡尔蔡司MultiSEM有限责任公司 利用多束粒子显微镜对3d样本成像的方法
TWI743626B (zh) 2019-01-24 2021-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
DE102019005362A1 (de) 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
DE102019008249B3 (de) 2019-11-27 2020-11-19 Carl Zeiss Multisem Gmbh Teilchenstrahl-System mit einer Multistrahl-Ablenkeinrichtung und einem Strahlfänger, Verfahren zum Betreiben des Teilchenstrahl-Systems und zugehöriges Computerprogrammprodukt
KR102799604B1 (ko) 2020-02-04 2025-04-23 칼 짜이스 멀티셈 게엠베하 다중 빔 디지털 스캐닝 및 이미지 획득
JP7689139B2 (ja) 2020-03-12 2025-06-05 カール ツァイス マルティセム ゲゼルシヤフト ミット ベシュレンクテル ハフツング マルチビーム発生ユニットおよびマルチビーム偏向ユニットの特定の改善
DE102020107738B3 (de) 2020-03-20 2021-01-14 Carl Zeiss Multisem Gmbh Teilchenstrahl-System mit einer Multipol-Linsen-Sequenz zur unabhängigen Fokussierung einer Vielzahl von Einzel-Teilchenstrahlen, seine Verwendung und zugehöriges Verfahren
DE102020123567B4 (de) 2020-09-09 2025-02-13 Carl Zeiss Multisem Gmbh Vielzahl-Teilchenstrahl-System mit Kontrast-Korrektur-Linsen-System
TW202220012A (zh) 2020-09-30 2022-05-16 德商卡爾蔡司多重掃描電子顯微鏡有限公司 在可調工作距離附近具快速自動對焦之多重粒子束顯微鏡及相關方法
DE102021200799B3 (de) 2021-01-29 2022-03-31 Carl Zeiss Multisem Gmbh Verfahren mit verbesserter Fokuseinstellung unter Berücksichtigung eines Bildebenenkipps in einem Vielzahl-Teilchenstrahlmikroskop
TW202312205A (zh) 2021-05-27 2023-03-16 德商卡爾蔡司多重掃描電子顯微鏡有限公司 多重射束帶電粒子系統與在多重射束帶電粒子系統中控制工作距離的方法
DE102021116969B3 (de) 2021-07-01 2022-09-22 Carl Zeiss Multisem Gmbh Verfahren zur bereichsweisen Probeninspektion mittels eines Vielstrahl-Teilchenmikroskopes, Computerprogrammprodukt und Vielstrahl-Teilchenmikroskop zur Halbleiterprobeninspektion
EP4385053A1 (en) * 2021-08-10 2024-06-19 Carl Zeiss MultiSEM GmbH Multi-beam generating unit with increased focusing power
CN119054040A (zh) * 2022-04-11 2024-11-29 华为技术有限公司 一种粒子矫正器和粒子系统
CN119013755A (zh) * 2022-04-12 2024-11-22 华为技术有限公司 一种粒子系统和粒子束的矫正方法
JP2024131429A (ja) 2023-03-16 2024-09-30 セイコーエプソン株式会社 メンテナンスユニット、及び液体吐出装置
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004265864A (ja) 2003-02-14 2004-09-24 Jeol Ltd 荷電粒子光学装置
JP2009032691A (ja) 2007-07-24 2009-02-12 Ims Nanofabrication Ag マルチビーム源
JP2010020919A (ja) 2008-07-08 2010-01-28 Hitachi High-Technologies Corp 検査装置
JP2018513543A (ja) 2016-04-13 2018-05-24 エルメス マイクロビジョン, インコーポレーテッドHermes Microvision Inc. 複数荷電粒子ビームの装置

Family Cites Families (122)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2854153A (en) * 1956-06-06 1958-09-30 Rudolph C Rydberg Automatic veneer laying machine
JPS52119178A (en) 1976-03-31 1977-10-06 Toshiba Corp Electron beam exposure device
CA1100237A (en) 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system
US4200794A (en) 1978-11-08 1980-04-29 Control Data Corporation Micro lens array and micro deflector assembly for fly's eye electron beam tubes using silicon components and techniques of fabrication and assembly
US4338548A (en) 1980-01-30 1982-07-06 Control Data Corporation Unipotential lens assembly for charged particle beam tubes and method for applying correction potentials thereto
JPS59184524A (ja) 1983-04-04 1984-10-19 Nippon Telegr & Teleph Corp <Ntt> 電子ビ−ム露光装置
JPS6042825A (ja) 1983-08-19 1985-03-07 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPS60105229A (ja) 1983-11-14 1985-06-10 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPH0789530B2 (ja) 1985-05-17 1995-09-27 日本電信電話株式会社 荷電ビ−ム露光装置
US4742234A (en) 1985-09-27 1988-05-03 American Telephone And Telegraph Company, At&T Bell Laboratories Charged-particle-beam lithography
JP2609599B2 (ja) * 1987-02-06 1997-05-14 株式会社日立製作所 平板形陰極線管
JP2523931B2 (ja) 1990-04-16 1996-08-14 富士通株式会社 ブランキングアパ―チャアレ―の製造方法
EP1369897A3 (en) 1996-03-04 2005-01-19 Canon Kabushiki Kaisha Electron beam exposure apparatus and method, and device manufacturing method
US5892224A (en) 1996-05-13 1999-04-06 Nikon Corporation Apparatus and methods for inspecting wafers and masks using multiple charged-particle beams
JP3796317B2 (ja) 1996-06-12 2006-07-12 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
JP3927620B2 (ja) 1996-06-12 2007-06-13 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
JP3728015B2 (ja) 1996-06-12 2005-12-21 キヤノン株式会社 電子ビーム露光システム及びそれを用いたデバイス製造方法
US5981954A (en) 1997-01-16 1999-11-09 Canon Kabushiki Kaisha Electron beam exposure apparatus
US6107636A (en) 1997-02-07 2000-08-22 Canon Kabushiki Kaisha Electron beam exposure apparatus and its control method
JP3787417B2 (ja) 1997-06-11 2006-06-21 キヤノン株式会社 電子ビーム露光方法及び電子ビーム露光装置
US6333508B1 (en) 1999-10-07 2001-12-25 Lucent Technologies, Inc. Illumination system for electron beam lithography tool
JP3763446B2 (ja) 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
JP4585661B2 (ja) 2000-03-31 2010-11-24 キヤノン株式会社 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法
JP2001284230A (ja) 2000-03-31 2001-10-12 Canon Inc 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法
JP4947841B2 (ja) 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
US6787780B2 (en) 2000-04-04 2004-09-07 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
EP1150327B1 (en) 2000-04-27 2018-02-14 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi beam charged particle device
EP1296351A4 (en) 2000-06-27 2009-09-23 Ebara Corp INVESTIGATION DEVICE FOR LOADED PARTICLE RAYS AND METHOD FOR PRODUCING A COMPONENT ELEVATED WITH THIS INSPECTION DEVICE
US7241993B2 (en) 2000-06-27 2007-07-10 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
DE60134922D1 (de) 2000-08-14 2008-09-04 Elith Llc Lithographischer Apparat
EP1271604A4 (en) 2001-01-10 2005-05-25 Ebara Corp APPARATUS AND METHOD FOR INSPECTING ELECTRON BEAM, AND DEVICE MANUFACTURING METHOD COMPRISING THE INSPECTION APPARATUS
JP4246401B2 (ja) 2001-01-18 2009-04-02 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム偏向装置
JP2002237270A (ja) * 2001-02-09 2002-08-23 Ebara Corp 荷電粒子ビーム偏向装置及びそれを用いた荷電粒子ビーム欠陥検査装置及び方法
JP4647820B2 (ja) 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法
JP4756776B2 (ja) 2001-05-25 2011-08-24 キヤノン株式会社 荷電粒子線露光装置、荷電粒子線露光方法およびデバイス製造方法
DE10127217B4 (de) 2001-06-05 2005-09-15 Infineon Technologies Ag Verfahren zur Herstellung lagegenauer großflächiger Membranmasken
DE10138882B4 (de) 2001-08-08 2005-09-08 Infineon Technologies Ag Großflächige Membranmaske und Verfahren zu ihrer Herstellung
US6818911B2 (en) 2002-04-10 2004-11-16 Canon Kabushiki Kaisha Array structure and method of manufacturing the same, charged particle beam exposure apparatus, and device manufacturing method
JP4220209B2 (ja) 2002-09-27 2009-02-04 株式会社アドバンテスト 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
JP4025613B2 (ja) 2002-09-27 2007-12-26 株式会社アドバンテスト 電子ビーム露光装置、電子ビーム露光装置校正方法、及び半導体素子製造方法
US6953938B2 (en) 2002-10-03 2005-10-11 Canon Kabushiki Kaisha Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus
US7015467B2 (en) 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode
AU2003276779A1 (en) 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
JP2004282038A (ja) 2003-02-28 2004-10-07 Canon Inc 偏向器、偏向器を製造する方法、偏向器を適用した荷電粒子線露光装置
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP2005019258A (ja) * 2003-06-27 2005-01-20 Hitachi High-Technologies Corp 電子ビームを用いた検査装置
JP4459568B2 (ja) 2003-08-06 2010-04-28 キヤノン株式会社 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
CN101103417B (zh) 2003-09-05 2012-06-27 卡尔蔡司Smt有限责任公司 粒子光学系统和排布结构,以及用于其的粒子光学组件
GB2408383B (en) * 2003-10-28 2006-05-10 Ims Nanofabrication Gmbh Pattern-definition device for maskless particle-beam exposure apparatus
WO2005074002A2 (en) 2004-01-29 2005-08-11 Applied Materials Israel, Ltd. Focusing system and method for a charged particle imaging system
US7326901B2 (en) 2004-04-15 2008-02-05 Applied Materials, Israel, Ltd. High throughput multi beam system and method
US7420164B2 (en) 2004-05-26 2008-09-02 Ebara Corporation Objective lens, electron beam system and method of inspecting defect
US7285779B2 (en) 2004-06-21 2007-10-23 Applied Materials Israel, Ltd. Methods of scanning an object that includes multiple regions of interest using an array of scanning beams
US7375326B2 (en) 2004-06-21 2008-05-20 Applied Materials, Israel, Ltd. Method and system for focusing a charged particle beam
US7468507B2 (en) 2005-01-26 2008-12-23 Applied Materials, Israel, Ltd. Optical spot grid array scanning system
US20090212213A1 (en) 2005-03-03 2009-08-27 Ebara Corporation Projection electron beam apparatus and defect inspection system using the apparatus
WO2006101116A1 (ja) 2005-03-22 2006-09-28 Ebara Corporation 電子線装置
JP5663717B2 (ja) 2005-09-06 2015-02-04 カール ツァイス マイクロスコピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ Ｇｍｂｈ 荷電粒子システム
EP2267753A3 (en) 2005-11-28 2011-01-26 Carl Zeiss SMT AG Particle-optical component
US7504622B2 (en) 2006-04-03 2009-03-17 Applied Materials, Israel, Ltd. High throughput multi beam detection system and method
US8134135B2 (en) 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
US9153413B2 (en) 2007-02-22 2015-10-06 Applied Materials Israel, Ltd. Multi-beam scanning electron beam device and methods of using the same
JP5634052B2 (ja) * 2009-01-09 2014-12-03 キヤノン株式会社 荷電粒子線描画装置およびデバイス製造方法
US8350214B2 (en) 2009-01-15 2013-01-08 Hitachi High-Technologies Corporation Charged particle beam applied apparatus
EP2556527B1 (en) 2010-04-09 2017-03-22 Carl Zeiss Microscopy GmbH Charged particle detection system and multi-beamlet inspection system
DE102010026169B4 (de) 2010-07-06 2014-09-04 Carl Zeiss Microscopy Gmbh Partikelstrahlsystem
CN103238202B (zh) 2010-09-28 2016-11-09 以色列实用材料有限公司 粒子光学系统及布置，以及用于这种系统及布置的粒子光学组件
JP5606292B2 (ja) 2010-11-19 2014-10-15 キヤノン株式会社 描画装置、物品の製造方法、偏向装置の製造方法、および、描画装置の製造方法
JP5683227B2 (ja) 2010-11-19 2015-03-11 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
US9530613B2 (en) 2011-02-18 2016-12-27 Applied Materials Israel, Ltd. Focusing a charged particle system
JP2012195097A (ja) 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
US8362425B2 (en) 2011-03-23 2013-01-29 Kla-Tencor Corporation Multiple-beam system for high-speed electron-beam inspection
NL2007604C2 (en) 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US9702983B2 (en) 2011-05-03 2017-07-11 Applied Materials Israel, Ltd. Multi-spot collection optics
JP5822535B2 (ja) 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013004216A (ja) 2011-06-14 2013-01-07 Canon Inc 荷電粒子線レンズ
GB2494118A (en) 2011-08-28 2013-03-06 Applied Materials Israel Ltd Test object for testing an array of beams
JP2013239667A (ja) 2012-05-17 2013-11-28 Canon Inc 荷電粒子線静電レンズにおける電極とその製造方法、荷電粒子線静電レンズ、及び荷電粒子線露光装置
JP2014007261A (ja) 2012-06-22 2014-01-16 Canon Inc 静電偏向器、描画装置およびデバイスの製造方法
JP2014007013A (ja) 2012-06-22 2014-01-16 Canon Inc 静電レンズアレイ、マルチ荷電粒子光学系、及びフォーカス調整方法
JP2014229481A (ja) 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
DE102013014976A1 (de) * 2013-09-09 2015-03-12 Carl Zeiss Microscopy Gmbh Teilchenoptisches System
US20150069260A1 (en) * 2013-09-11 2015-03-12 Ims Nanofabrication Ag Charged-particle multi-beam apparatus having correction plate
DE102013016113B4 (de) 2013-09-26 2018-11-29 Carl Zeiss Microscopy Gmbh Verfahren zum Detektieren von Elektronen, Elektronendetektor und Inspektionssystem
GB2519511A (en) 2013-09-27 2015-04-29 Zeiss Carl Microscopy Gmbh Particle optical system having a liner tube and/or compensating coils
US9263233B2 (en) * 2013-09-29 2016-02-16 Carl Zeiss Microscopy Gmbh Charged particle multi-beam inspection system and method of operating the same
EP3454357B1 (en) 2013-09-30 2020-08-12 Carl Zeiss Microscopy GmbH Charged particle beam system and method of operating the same
GB2521819A (en) 2013-11-22 2015-07-08 Zeiss Carl Microscopy Gmbh Particle optical arrangement for a charged particle optical system
US20150311031A1 (en) * 2014-04-25 2015-10-29 Ims Nanofabrication Ag Multi-Beam Tool for Cutting Patterns
NL2012780B1 (en) 2014-05-08 2016-02-23 Univ Delft Tech Apparatus and method for inspecting a sample using a plurality of charged particle beams.
DE102014008083B9 (de) 2014-05-30 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
DE102014008105B4 (de) 2014-05-30 2021-11-11 Carl Zeiss Multisem Gmbh Mehrstrahl-Teilchenmikroskop
DE102014008383B9 (de) 2014-06-06 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zum Betreiben einer Teilchenoptik
DE102015202172B4 (de) 2015-02-06 2017-01-19 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts
US9691588B2 (en) * 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
US9607805B2 (en) 2015-05-12 2017-03-28 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US10410831B2 (en) * 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US9922799B2 (en) 2015-07-21 2018-03-20 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
EP3809124A3 (en) 2015-07-22 2022-03-16 Hermes Microvision Inc. Apparatus of plural charged-particle beams
DE102015013698B9 (de) 2015-10-22 2017-12-21 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops
CN114420523B (zh) * 2015-11-30 2025-04-15 Asml荷兰有限公司 多个带电粒子束的设备
CN113192815B (zh) 2016-01-27 2024-10-29 Asml荷兰有限公司 多个带电粒子束的装置
JP6709109B2 (ja) * 2016-05-31 2020-06-10 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム照射装置
KR20250127344A (ko) 2016-12-30 2025-08-26 에이에스엠엘 네델란즈 비.브이. 다수의 하전 입자 빔을 사용하는 장치
WO2018172186A1 (en) 2017-03-20 2018-09-27 Carl Zeiss Microscopy Gmbh Charged particle beam system and method
DE102018202421B3 (de) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem
DE102018202428B3 (de) 2018-02-16 2019-05-09 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenmikroskop
WO2019166331A2 (en) 2018-02-27 2019-09-06 Carl Zeiss Microscopy Gmbh Charged particle beam system and method
US10811215B2 (en) 2018-05-21 2020-10-20 Carl Zeiss Multisem Gmbh Charged particle beam system
DE102018115012A1 (de) * 2018-06-21 2019-12-24 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
JP7030663B2 (ja) 2018-09-12 2022-03-07 株式会社東芝 半導体装置及び荷電粒子線露光装置
DE102018007455B4 (de) 2018-09-21 2020-07-09 Carl Zeiss Multisem Gmbh Verfahren zum Detektorabgleich bei der Abbildung von Objekten mittels eines Mehrstrahl-Teilchenmikroskops, System sowie Computerprogrammprodukt
DE102018007652B4 (de) 2018-09-27 2021-03-25 Carl Zeiss Multisem Gmbh Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
DE102018124044B3 (de) 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
DE102018124219A1 (de) 2018-10-01 2020-04-02 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
DE102018133703B4 (de) 2018-12-29 2020-08-06 Carl Zeiss Multisem Gmbh Vorrichtung zur Erzeugung einer Vielzahl von Teilchenstrahlen und Vielstrahl-Teilchenstrahlsysteme
CN111477530B (zh) 2019-01-24 2023-05-05 卡尔蔡司MultiSEM有限责任公司 利用多束粒子显微镜对3d样本成像的方法
TWI743626B (zh) 2019-01-24 2021-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品
US10741355B1 (en) 2019-02-04 2020-08-11 Carl Zeiss Multisem Gmbh Multi-beam charged particle system
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
DE102019005364B3 (de) 2019-07-31 2020-10-08 Carl Zeiss Multisem Gmbh System-Kombination eines Teilchenstrahlsystem und eines lichtoptischen Systems mit kollinearer Strahlführung sowie Verwendung der System-Kombination

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004265864A (ja) 2003-02-14 2004-09-24 Jeol Ltd 荷電粒子光学装置
JP2009032691A (ja) 2007-07-24 2009-02-12 Ims Nanofabrication Ag マルチビーム源
JP2010020919A (ja) 2008-07-08 2010-01-28 Hitachi High-Technologies Corp 検査装置
JP2018513543A (ja) 2016-04-13 2018-05-24 エルメス マイクロビジョン, インコーポレーテッドHermes Microvision Inc. 複数荷電粒子ビームの装置

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