|
US2854153A
(en)
*
|
1956-06-06 |
1958-09-30 |
Rudolph C Rydberg |
Automatic veneer laying machine
|
|
JPS52119178A
(en)
|
1976-03-31 |
1977-10-06 |
Toshiba Corp |
Electron beam exposure device
|
|
CA1100237A
(en)
|
1977-03-23 |
1981-04-28 |
Roger F.W. Pease |
Multiple electron beam exposure system
|
|
US4200794A
(en)
|
1978-11-08 |
1980-04-29 |
Control Data Corporation |
Micro lens array and micro deflector assembly for fly's eye electron beam tubes using silicon components and techniques of fabrication and assembly
|
|
US4338548A
(en)
|
1980-01-30 |
1982-07-06 |
Control Data Corporation |
Unipotential lens assembly for charged particle beam tubes and method for applying correction potentials thereto
|
|
JPS59184524A
(ja)
|
1983-04-04 |
1984-10-19 |
Nippon Telegr & Teleph Corp <Ntt> |
電子ビ−ム露光装置
|
|
JPS6042825A
(ja)
|
1983-08-19 |
1985-03-07 |
Nippon Telegr & Teleph Corp <Ntt> |
荷電ビ−ム露光装置
|
|
JPS60105229A
(ja)
|
1983-11-14 |
1985-06-10 |
Nippon Telegr & Teleph Corp <Ntt> |
荷電ビ−ム露光装置
|
|
JPH0789530B2
(ja)
|
1985-05-17 |
1995-09-27 |
日本電信電話株式会社 |
荷電ビ−ム露光装置
|
|
US4742234A
(en)
|
1985-09-27 |
1988-05-03 |
American Telephone And Telegraph Company, At&T Bell Laboratories |
Charged-particle-beam lithography
|
|
JP2609599B2
(ja)
*
|
1987-02-06 |
1997-05-14 |
株式会社日立製作所 |
平板形陰極線管
|
|
JP2523931B2
(ja)
|
1990-04-16 |
1996-08-14 |
富士通株式会社 |
ブランキングアパ―チャアレ―の製造方法
|
|
EP1369897A3
(en)
|
1996-03-04 |
2005-01-19 |
Canon Kabushiki Kaisha |
Electron beam exposure apparatus and method, and device manufacturing method
|
|
US5892224A
(en)
|
1996-05-13 |
1999-04-06 |
Nikon Corporation |
Apparatus and methods for inspecting wafers and masks using multiple charged-particle beams
|
|
JP3796317B2
(ja)
|
1996-06-12 |
2006-07-12 |
キヤノン株式会社 |
電子ビーム露光方法及びそれを用いたデバイス製造方法
|
|
JP3927620B2
(ja)
|
1996-06-12 |
2007-06-13 |
キヤノン株式会社 |
電子ビーム露光方法及びそれを用いたデバイス製造方法
|
|
JP3728015B2
(ja)
|
1996-06-12 |
2005-12-21 |
キヤノン株式会社 |
電子ビーム露光システム及びそれを用いたデバイス製造方法
|
|
US5981954A
(en)
|
1997-01-16 |
1999-11-09 |
Canon Kabushiki Kaisha |
Electron beam exposure apparatus
|
|
US6107636A
(en)
|
1997-02-07 |
2000-08-22 |
Canon Kabushiki Kaisha |
Electron beam exposure apparatus and its control method
|
|
JP3787417B2
(ja)
|
1997-06-11 |
2006-06-21 |
キヤノン株式会社 |
電子ビーム露光方法及び電子ビーム露光装置
|
|
US6333508B1
(en)
|
1999-10-07 |
2001-12-25 |
Lucent Technologies, Inc. |
Illumination system for electron beam lithography tool
|
|
JP3763446B2
(ja)
|
1999-10-18 |
2006-04-05 |
キヤノン株式会社 |
静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
|
|
JP4585661B2
(ja)
|
2000-03-31 |
2010-11-24 |
キヤノン株式会社 |
電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法
|
|
JP2001284230A
(ja)
|
2000-03-31 |
2001-10-12 |
Canon Inc |
電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法
|
|
JP4947841B2
(ja)
|
2000-03-31 |
2012-06-06 |
キヤノン株式会社 |
荷電粒子線露光装置
|
|
US6787780B2
(en)
|
2000-04-04 |
2004-09-07 |
Advantest Corporation |
Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
|
|
EP1150327B1
(en)
|
2000-04-27 |
2018-02-14 |
ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH |
Multi beam charged particle device
|
|
EP1296351A4
(en)
|
2000-06-27 |
2009-09-23 |
Ebara Corp |
INVESTIGATION DEVICE FOR LOADED PARTICLE RAYS AND METHOD FOR PRODUCING A COMPONENT ELEVATED WITH THIS INSPECTION DEVICE
|
|
US7241993B2
(en)
|
2000-06-27 |
2007-07-10 |
Ebara Corporation |
Inspection system by charged particle beam and method of manufacturing devices using the system
|
|
DE60134922D1
(de)
|
2000-08-14 |
2008-09-04 |
Elith Llc |
Lithographischer Apparat
|
|
EP1271604A4
(en)
|
2001-01-10 |
2005-05-25 |
Ebara Corp |
APPARATUS AND METHOD FOR INSPECTING ELECTRON BEAM, AND DEVICE MANUFACTURING METHOD COMPRISING THE INSPECTION APPARATUS
|
|
JP4246401B2
(ja)
|
2001-01-18 |
2009-04-02 |
株式会社アドバンテスト |
電子ビーム露光装置及び電子ビーム偏向装置
|
|
JP2002237270A
(ja)
*
|
2001-02-09 |
2002-08-23 |
Ebara Corp |
荷電粒子ビーム偏向装置及びそれを用いた荷電粒子ビーム欠陥検査装置及び方法
|
|
JP4647820B2
(ja)
|
2001-04-23 |
2011-03-09 |
キヤノン株式会社 |
荷電粒子線描画装置、および、デバイスの製造方法
|
|
JP4756776B2
(ja)
|
2001-05-25 |
2011-08-24 |
キヤノン株式会社 |
荷電粒子線露光装置、荷電粒子線露光方法およびデバイス製造方法
|
|
DE10127217B4
(de)
|
2001-06-05 |
2005-09-15 |
Infineon Technologies Ag |
Verfahren zur Herstellung lagegenauer großflächiger Membranmasken
|
|
DE10138882B4
(de)
|
2001-08-08 |
2005-09-08 |
Infineon Technologies Ag |
Großflächige Membranmaske und Verfahren zu ihrer Herstellung
|
|
US6818911B2
(en)
|
2002-04-10 |
2004-11-16 |
Canon Kabushiki Kaisha |
Array structure and method of manufacturing the same, charged particle beam exposure apparatus, and device manufacturing method
|
|
JP4220209B2
(ja)
|
2002-09-27 |
2009-02-04 |
株式会社アドバンテスト |
電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
|
|
JP4025613B2
(ja)
|
2002-09-27 |
2007-12-26 |
株式会社アドバンテスト |
電子ビーム露光装置、電子ビーム露光装置校正方法、及び半導体素子製造方法
|
|
US6953938B2
(en)
|
2002-10-03 |
2005-10-11 |
Canon Kabushiki Kaisha |
Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus
|
|
US7015467B2
(en)
|
2002-10-10 |
2006-03-21 |
Applied Materials, Inc. |
Generating electrons with an activated photocathode
|
|
AU2003276779A1
(en)
|
2002-10-30 |
2004-05-25 |
Mapper Lithography Ip B.V. |
Electron beam exposure system
|
|
JP4313691B2
(ja)
*
|
2003-02-14 |
2009-08-12 |
日本電子株式会社 |
荷電粒子光学装置
|
|
JP2004282038A
(ja)
|
2003-02-28 |
2004-10-07 |
Canon Inc |
偏向器、偏向器を製造する方法、偏向器を適用した荷電粒子線露光装置
|
|
KR101068607B1
(ko)
|
2003-03-10 |
2011-09-30 |
마퍼 리쏘그라피 아이피 비.브이. |
복수 개의 빔렛 발생 장치
|
|
JP2005019258A
(ja)
*
|
2003-06-27 |
2005-01-20 |
Hitachi High-Technologies Corp |
電子ビームを用いた検査装置
|
|
JP4459568B2
(ja)
|
2003-08-06 |
2010-04-28 |
キヤノン株式会社 |
マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
|
|
CN101103417B
(zh)
|
2003-09-05 |
2012-06-27 |
卡尔蔡司Smt有限责任公司 |
粒子光学系统和排布结构,以及用于其的粒子光学组件
|
|
GB2408383B
(en)
*
|
2003-10-28 |
2006-05-10 |
Ims Nanofabrication Gmbh |
Pattern-definition device for maskless particle-beam exposure apparatus
|
|
WO2005074002A2
(en)
|
2004-01-29 |
2005-08-11 |
Applied Materials Israel, Ltd. |
Focusing system and method for a charged particle imaging system
|
|
US7326901B2
(en)
|
2004-04-15 |
2008-02-05 |
Applied Materials, Israel, Ltd. |
High throughput multi beam system and method
|
|
US7420164B2
(en)
|
2004-05-26 |
2008-09-02 |
Ebara Corporation |
Objective lens, electron beam system and method of inspecting defect
|
|
US7285779B2
(en)
|
2004-06-21 |
2007-10-23 |
Applied Materials Israel, Ltd. |
Methods of scanning an object that includes multiple regions of interest using an array of scanning beams
|
|
US7375326B2
(en)
|
2004-06-21 |
2008-05-20 |
Applied Materials, Israel, Ltd. |
Method and system for focusing a charged particle beam
|
|
US7468507B2
(en)
|
2005-01-26 |
2008-12-23 |
Applied Materials, Israel, Ltd. |
Optical spot grid array scanning system
|
|
US20090212213A1
(en)
|
2005-03-03 |
2009-08-27 |
Ebara Corporation |
Projection electron beam apparatus and defect inspection system using the apparatus
|
|
WO2006101116A1
(ja)
|
2005-03-22 |
2006-09-28 |
Ebara Corporation |
電子線装置
|
|
JP5663717B2
(ja)
|
2005-09-06 |
2015-02-04 |
カール ツァイス マイクロスコピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ Ｇｍｂｈ |
荷電粒子システム
|
|
EP2267753A3
(en)
|
2005-11-28 |
2011-01-26 |
Carl Zeiss SMT AG |
Particle-optical component
|
|
US7504622B2
(en)
|
2006-04-03 |
2009-03-17 |
Applied Materials, Israel, Ltd. |
High throughput multi beam detection system and method
|
|
US8134135B2
(en)
|
2006-07-25 |
2012-03-13 |
Mapper Lithography Ip B.V. |
Multiple beam charged particle optical system
|
|
US9153413B2
(en)
|
2007-02-22 |
2015-10-06 |
Applied Materials Israel, Ltd. |
Multi-beam scanning electron beam device and methods of using the same
|
|
EP2019415B1
(en)
*
|
2007-07-24 |
2016-05-11 |
IMS Nanofabrication AG |
Multi-beam source
|
|
JP5107812B2
(ja)
*
|
2008-07-08 |
2012-12-26 |
株式会社日立ハイテクノロジーズ |
検査装置
|
|
JP5634052B2
(ja)
*
|
2009-01-09 |
2014-12-03 |
キヤノン株式会社 |
荷電粒子線描画装置およびデバイス製造方法
|
|
US8350214B2
(en)
|
2009-01-15 |
2013-01-08 |
Hitachi High-Technologies Corporation |
Charged particle beam applied apparatus
|
|
EP2556527B1
(en)
|
2010-04-09 |
2017-03-22 |
Carl Zeiss Microscopy GmbH |
Charged particle detection system and multi-beamlet inspection system
|
|
DE102010026169B4
(de)
|
2010-07-06 |
2014-09-04 |
Carl Zeiss Microscopy Gmbh |
Partikelstrahlsystem
|
|
CN103238202B
(zh)
|
2010-09-28 |
2016-11-09 |
以色列实用材料有限公司 |
粒子光学系统及布置，以及用于这种系统及布置的粒子光学组件
|
|
JP5606292B2
(ja)
|
2010-11-19 |
2014-10-15 |
キヤノン株式会社 |
描画装置、物品の製造方法、偏向装置の製造方法、および、描画装置の製造方法
|
|
JP5683227B2
(ja)
|
2010-11-19 |
2015-03-11 |
キヤノン株式会社 |
電子ビーム描画装置、およびそれを用いた物品の製造方法
|
|
US9530613B2
(en)
|
2011-02-18 |
2016-12-27 |
Applied Materials Israel, Ltd. |
Focusing a charged particle system
|
|
JP2012195097A
(ja)
|
2011-03-15 |
2012-10-11 |
Canon Inc |
荷電粒子線レンズおよびそれを用いた露光装置
|
|
US8362425B2
(en)
|
2011-03-23 |
2013-01-29 |
Kla-Tencor Corporation |
Multiple-beam system for high-speed electron-beam inspection
|
|
NL2007604C2
(en)
|
2011-10-14 |
2013-05-01 |
Mapper Lithography Ip Bv |
Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
|
|
US9702983B2
(en)
|
2011-05-03 |
2017-07-11 |
Applied Materials Israel, Ltd. |
Multi-spot collection optics
|
|
JP5822535B2
(ja)
|
2011-05-16 |
2015-11-24 |
キヤノン株式会社 |
描画装置、および、物品の製造方法
|
|
JP2013004216A
(ja)
|
2011-06-14 |
2013-01-07 |
Canon Inc |
荷電粒子線レンズ
|
|
GB2494118A
(en)
|
2011-08-28 |
2013-03-06 |
Applied Materials Israel Ltd |
Test object for testing an array of beams
|
|
JP2013239667A
(ja)
|
2012-05-17 |
2013-11-28 |
Canon Inc |
荷電粒子線静電レンズにおける電極とその製造方法、荷電粒子線静電レンズ、及び荷電粒子線露光装置
|
|
JP2014007261A
(ja)
|
2012-06-22 |
2014-01-16 |
Canon Inc |
静電偏向器、描画装置およびデバイスの製造方法
|
|
JP2014007013A
(ja)
|
2012-06-22 |
2014-01-16 |
Canon Inc |
静電レンズアレイ、マルチ荷電粒子光学系、及びフォーカス調整方法
|
|
JP2014229481A
(ja)
|
2013-05-22 |
2014-12-08 |
株式会社日立ハイテクノロジーズ |
荷電粒子線応用装置
|
|
JP2015023286A
(ja)
|
2013-07-17 |
2015-02-02 |
アイエムエス ナノファブリケーション アーゲー |
複数のブランキングアレイを有するパターン画定装置
|
|
DE102013014976A1
(de)
*
|
2013-09-09 |
2015-03-12 |
Carl Zeiss Microscopy Gmbh |
Teilchenoptisches System
|
|
US20150069260A1
(en)
*
|
2013-09-11 |
2015-03-12 |
Ims Nanofabrication Ag |
Charged-particle multi-beam apparatus having correction plate
|
|
DE102013016113B4
(de)
|
2013-09-26 |
2018-11-29 |
Carl Zeiss Microscopy Gmbh |
Verfahren zum Detektieren von Elektronen, Elektronendetektor und Inspektionssystem
|
|
GB2519511A
(en)
|
2013-09-27 |
2015-04-29 |
Zeiss Carl Microscopy Gmbh |
Particle optical system having a liner tube and/or compensating coils
|
|
US9263233B2
(en)
*
|
2013-09-29 |
2016-02-16 |
Carl Zeiss Microscopy Gmbh |
Charged particle multi-beam inspection system and method of operating the same
|
|
EP3454357B1
(en)
|
2013-09-30 |
2020-08-12 |
Carl Zeiss Microscopy GmbH |
Charged particle beam system and method of operating the same
|
|
GB2521819A
(en)
|
2013-11-22 |
2015-07-08 |
Zeiss Carl Microscopy Gmbh |
Particle optical arrangement for a charged particle optical system
|
|
US20150311031A1
(en)
*
|
2014-04-25 |
2015-10-29 |
Ims Nanofabrication Ag |
Multi-Beam Tool for Cutting Patterns
|
|
NL2012780B1
(en)
|
2014-05-08 |
2016-02-23 |
Univ Delft Tech |
Apparatus and method for inspecting a sample using a plurality of charged particle beams.
|
|
DE102014008083B9
(de)
|
2014-05-30 |
2018-03-22 |
Carl Zeiss Microscopy Gmbh |
Teilchenstrahlsystem
|
|
DE102014008105B4
(de)
|
2014-05-30 |
2021-11-11 |
Carl Zeiss Multisem Gmbh |
Mehrstrahl-Teilchenmikroskop
|
|
DE102014008383B9
(de)
|
2014-06-06 |
2018-03-22 |
Carl Zeiss Microscopy Gmbh |
Teilchenstrahlsystem und Verfahren zum Betreiben einer Teilchenoptik
|
|
DE102015202172B4
(de)
|
2015-02-06 |
2017-01-19 |
Carl Zeiss Microscopy Gmbh |
Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts
|
|
US9691588B2
(en)
*
|
2015-03-10 |
2017-06-27 |
Hermes Microvision, Inc. |
Apparatus of plural charged-particle beams
|
|
WO2016145458A1
(en)
*
|
2015-03-10 |
2016-09-15 |
Hermes Microvision Inc. |
Apparatus of plural charged-particle beams
|
|
US9607805B2
(en)
|
2015-05-12 |
2017-03-28 |
Hermes Microvision Inc. |
Apparatus of plural charged-particle beams
|
|
US10410831B2
(en)
*
|
2015-05-12 |
2019-09-10 |
Ims Nanofabrication Gmbh |
Multi-beam writing using inclined exposure stripes
|
|
US9922799B2
(en)
|
2015-07-21 |
2018-03-20 |
Hermes Microvision, Inc. |
Apparatus of plural charged-particle beams
|
|
EP3809124A3
(en)
|
2015-07-22 |
2022-03-16 |
Hermes Microvision Inc. |
Apparatus of plural charged-particle beams
|
|
DE102015013698B9
(de)
|
2015-10-22 |
2017-12-21 |
Carl Zeiss Microscopy Gmbh |
Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops
|
|
CN114420523B
(zh)
*
|
2015-11-30 |
2025-04-15 |
Asml荷兰有限公司 |
多个带电粒子束的设备
|
|
CN113192815B
(zh)
|
2016-01-27 |
2024-10-29 |
Asml荷兰有限公司 |
多个带电粒子束的装置
|
|
JP6709109B2
(ja)
*
|
2016-05-31 |
2020-06-10 |
株式会社ニューフレアテクノロジー |
マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム照射装置
|
|
KR20250127344A
(ko)
|
2016-12-30 |
2025-08-26 |
에이에스엠엘 네델란즈 비.브이. |
다수의 하전 입자 빔을 사용하는 장치
|
|
WO2018172186A1
(en)
|
2017-03-20 |
2018-09-27 |
Carl Zeiss Microscopy Gmbh |
Charged particle beam system and method
|
|
DE102018202421B3
(de)
|
2018-02-16 |
2019-07-11 |
Carl Zeiss Microscopy Gmbh |
Vielstrahl-Teilchenstrahlsystem
|
|
DE102018202428B3
(de)
|
2018-02-16 |
2019-05-09 |
Carl Zeiss Microscopy Gmbh |
Vielstrahl-Teilchenmikroskop
|
|
WO2019166331A2
(en)
|
2018-02-27 |
2019-09-06 |
Carl Zeiss Microscopy Gmbh |
Charged particle beam system and method
|
|
US10811215B2
(en)
|
2018-05-21 |
2020-10-20 |
Carl Zeiss Multisem Gmbh |
Charged particle beam system
|
|
DE102018115012A1
(de)
*
|
2018-06-21 |
2019-12-24 |
Carl Zeiss Microscopy Gmbh |
Teilchenstrahlsystem
|
|
JP7030663B2
(ja)
|
2018-09-12 |
2022-03-07 |
株式会社東芝 |
半導体装置及び荷電粒子線露光装置
|
|
DE102018007455B4
(de)
|
2018-09-21 |
2020-07-09 |
Carl Zeiss Multisem Gmbh |
Verfahren zum Detektorabgleich bei der Abbildung von Objekten mittels eines Mehrstrahl-Teilchenmikroskops, System sowie Computerprogrammprodukt
|
|
DE102018007652B4
(de)
|
2018-09-27 |
2021-03-25 |
Carl Zeiss Multisem Gmbh |
Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
|
|
DE102018124044B3
(de)
|
2018-09-28 |
2020-02-06 |
Carl Zeiss Microscopy Gmbh |
Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
|
|
DE102018124219A1
(de)
|
2018-10-01 |
2020-04-02 |
Carl Zeiss Microscopy Gmbh |
Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
|
|
DE102018133703B4
(de)
|
2018-12-29 |
2020-08-06 |
Carl Zeiss Multisem Gmbh |
Vorrichtung zur Erzeugung einer Vielzahl von Teilchenstrahlen und Vielstrahl-Teilchenstrahlsysteme
|
|
CN111477530B
(zh)
|
2019-01-24 |
2023-05-05 |
卡尔蔡司MultiSEM有限责任公司 |
利用多束粒子显微镜对3d样本成像的方法
|
|
TWI743626B
(zh)
|
2019-01-24 |
2021-10-21 |
德商卡爾蔡司多重掃描電子顯微鏡有限公司 |
包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品
|
|
US10741355B1
(en)
|
2019-02-04 |
2020-08-11 |
Carl Zeiss Multisem Gmbh |
Multi-beam charged particle system
|
|
DE102019004124B4
(de)
|
2019-06-13 |
2024-03-21 |
Carl Zeiss Multisem Gmbh |
Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
|
|
DE102019005364B3
(de)
|
2019-07-31 |
2020-10-08 |
Carl Zeiss Multisem Gmbh |
System-Kombination eines Teilchenstrahlsystem und eines lichtoptischen Systems mit kollinearer Strahlführung sowie Verwendung der System-Kombination
|