GB2494118A - Test object for testing an array of beams - Google Patents

Test object for testing an array of beams Download PDF

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Publication number
GB2494118A
GB2494118A GB201114846A GB201114846A GB2494118A GB 2494118 A GB2494118 A GB 2494118A GB 201114846 A GB201114846 A GB 201114846A GB 201114846 A GB201114846 A GB 201114846A GB 2494118 A GB2494118 A GB 2494118A
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sub
text
gt
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fields
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GB201114846A
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GB201114846D0 (en
Inventor
Zvika Rosenberg
Dirk Zeidler
Thomas Kemen
Nissim Elmaliach
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Carl Zeiss AG
Applied Materials Israel Ltd
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Carl Zeiss AG
Applied Materials Israel Ltd
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Priority to GB201114846A priority Critical patent/GB2494118A/en
Publication of GB201114846D0 publication Critical patent/GB201114846D0/en
Publication of GB2494118A publication Critical patent/GB2494118A/en
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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261Details
    • H01J37/263Contrast, resolution or power of penetration
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • H01J2237/2817Pattern inspection
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/282Determination of microscope properties
    • H01J2237/2826Calibration

Abstract

The test object 10 for a multi-beam device comprises multiple regions 20, wherein each region 20 comprises multiple fields (Fig. 2, 30); wherein each field (30) comprises multiple sub-fields (Fig. 3); wherein each sub-field comprises multiple patterns structural elements (Fig. 11, 12, 13). A location and number of sub-fields of at least one field (30) correspond to a number of beams in an array of beams of the multiple beam system and to an expected spatial relationship between the beams of the array. By obtaining images of sub-fields of a field of a test object by scanning the sub-fields by an array of beams the bean system may be accessed. This is achieved by at least one spatial or optical characteristic of the array of beams based on the images of the sub-fields.

Description

TEST OBJECT FOR TESTING AN ARRAY OF BEAMS

BACKGROUND

[00!] Multi-beam systems acquire images hy illuminating a sample with an array of beams. I JS patents 7554094 and 7244949 of Knippelmeyer et a!. describe a multiple beam system.

10021 When using an array of beams, the characteristics of each beam (focus, aberrations, location errors) have to be substantially the same.

[0031 There is a growing need to evaluate the beam characteristics of beams of a multiple beam system.

BRIEF DESCRIPTION OF THE DRAWINGS

[004] The subject matter regarded as the invention is particularly pointed out and distinctly claimed in the concluding portion of the speeificatiow The invention, how-ever, both as to organization and method of operation, together with objects,features, and advantages thereof, may best he understood by reference to the following detailed description when read with the accompanying drawings in which: 10051 Figure 1 illustrates a test object according to an embodiment of the invention; 10061 Figure 2 illustrates multiple fields of a region of the test object of figure 1, according to an embodiment of the invention: 10071 Figures 3-6 and 10 illustrate sub-fields of a field of the test object of figure 1, according to various embodiments of thc invention; 1008] Figure 7 illustrates a sub-field according to an embodiment of the invention; [009] Figure 8 illustrates a sub-field according to an embodiment of the invention: 100101 Figure 9 illustrates a sub-field according to an embodiment of the invention; [00111 Figure 11 illustrates a sub-field according to an embodiment of the invention; 100121 Figure 12 illustrates a sub-field according to an embodiment of the invention; [0013J Figure 13 illustrates a sub-field according to an embodiment of the. invention; and [0014] Figure 14 illustrates a method according to an embodiment of the invention.

[0015] It will he appreciated that for simplicity and clarity of illustration, elements shown in the figures have not necessarily been drawn to scale. For example, the dimensions of some of the elements may be exaggerated relative to other elements for clarity. Further, where considered appropriate, reference numerals may he repeated among the figures to indicate corresponding or analogous elements.

DETAILED DESCRIPTION OF THE PRESENT INVENTION

[00161 In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the invention. however, it will he understood by those skilled in the art thai the pmsent invention may he practiced without these specific details. In other instances, well-known methods, proceduits, and components have not been described in detail so as not to obscure the present invention.

[0017] The figures can he out of scale.

[0018] A test object for testing a multiple beam system is provided. The lest object may include multiple regions. Each region may include multiple fields. Each field may include multiple sub-fields. Each sub-field may include multiple structural elements. A location and number of sub-fields of at least one field correspond to a number of beams of an array of beams of the multiple beam system and to an expected spatial relationship hetween the beams of the array of beams. For example -the sub-fields of a single field can he scanned by the array of beams while introducing substantially the same movement between the array of beams and the test object. Additionally or alternatively, the sub-fields of the single field can be scanned by the array of beams while introducing substantially the same deflection to the array of beams. Once illuminated by the array of beams each beam may impinge on a different sub-field. Various scanning patterns can be applied in order to allow the array of beams to scan the entire field.

10019] The size of each field may correspond to the field of view (FOV) of the multiple beam system. thus -the entire field can he scanned by the array of beams without changing the FOY of the array of beams.

[00201 the sub-fields that belong to the same field may be ideally identical to each other.

According to an embodiment of the invention at least two sub-fields of the same field can differ From each other.

[0021] Sub-fields that belong to different fields differ from each other by at least one spatial characteristic of patterns that helong to the different fields.

[0022] Each sub-field may include a border that comprises border patterns, multiple patterns and textual information about the sub-field. The textual information may include a unique code to identifying the sub-field. By the aid of this code it is possible also to verify that each beam in the array of beams impinges on the intended suh-leld.

[0023] Different sub-fields differ from each other by at least one out of spacing between features, a size of features, and shape of features.

[0024] The test object can be arranged to test an array of beams that differ from each other by pitch, number of beams or any other spatial characteristic. Different fields of the test object can bc sized to comply with different arrays of beams.

[0025] The test object can he made of silicon and include silicon patterns. It may he made hy any lithography process that can manufacture highly accurate patterns in thc nanometer region.

[0026] Figure 1 illustrates a Lest obleet according to an embodiment of the invention. The lest ohject may include multiple regions (such as region 20) that are illustrated in figure 1 as having a rectangular shape. The regions can differ from each other by size, shape and, additionally or alternatively, patterns included in the regions. Alternatively, the regions can he ideally identical to each other.

[0027] Figure 2 illustrates multiple fields 30 of a region 20 of the test ohiect 10 of ligure, according to an embodiment of the invention. The lields can he of the same size, shape or may differ from each other. Different tIelds usually include different patterns or differ from each other hy at least one spatial parameter such as the distance between patterns, shape of patterns, size of pattems, type of patterns, and the like. Figure 2 illustrates a rectangular array that includes twenty rows and twenty columns denoted A I..T20, wherein each colunm is associated with a letter (A..'!).

[he lields of each column are ifirther associated with numbers ranging from I (upmost row) till 20 (lowest row). The fields of figure 2 may have the same size. For example-the size of each field can be about 200 microns by 200 microns and adjacent fields can he spaced apart by 5-100 microns. For example, the site can be about 199 micron by 222 micron.

[0028] According to an embodiment of the invention the region can exhibit the following characteristics: a. Region size -4000-5000 micron by 4000- 500 micron.

b. Every region is divided into 300-500

fields.

c. Each field can be divided into sub-fields;

thc number of sublields is equal or larger than the number of beams in the array of beams.

d. Thcrc can be 4 groups of sub-fields

according to their pitch -thai may range between Few microns to 15 and even 40 microns.

e. There can be stnictures with pitch periods 1:1, 1:2, 1:6 and Tsolated for each Critical Dimension (CD) size f. There can be structures with arrays of lines (around I 2pm length, sub die dimension) with CD sizes (line widths) of 20, 30, 40, 50, 70, 100, 200, 400, 800, l000nm g. There can he structures with arrays of patterns with sites of 60, 70, 80, 90, 100, 200, 400, 600. 800, l000nm h. There can he structures with CD & Pitch and Fealure br pattern recognition next to array ol lines.

[00291 The sub-fields of lields Al-AlO of the firsi row of lields may exhibit the Following characteristics: a. Al -Horizontal lines, 20 nm, line/space -1:1 h. A2 -Horizontal lines, 30 nm, line /space -1:1 c. A3 -Horizontal lines, 40 nm, line /space -1: 1 d. A4 -Horizontal lines, 50 nm, line /space -1: 1 e. AS -Horizontal lines, 70 nm, line /space -1:1 f. A6 -Horizontal lines, 100 nm, line /space -1:1 g. A7 -Horizontal lines, 200 nm, line /space -1:1 h. AS -Horizontal lines, 400 nm, line /spaee -1:1 i. A9 -Horizontal lines, 800 nm, line /space -1:1 j. AiD -Horizontal lines,! 000 nm, line /space -1:1 [0030] The sub-fields of fields B 1-B 10 of the second row of fields may exhibit the following characteristics: a. Bi -horizontal lines, 20 nm, line /space -1:2 h. B2 -horizontal lines, 30 nm, line tspace -1:2 c. B3 -Horizontal lines, 40 nm, line /space -1:2 d. B4 -Horizontal lines, 50 nm, line /space -1:2 e. B5 -Horizontal lines, 70 nm, line/space -B6 -Horizontal lines, tOO nm, line /spaee -1:2 g. B7 -Horizontal lines, 200 nm, line /space -1:2 h. BS -Horizontal lines, 400 nm, line /space -1:2 i. B9 -Horizontal lines, 800 nm, line /spaee -1:2 j. BiD -horizontal lines,1000 nm, line /space -1:2 [0031] The sub-fields of fields Cl-CO of the third row of fields may exhibit the following characteristics: a. Cl -Honzontal lines, 20 nm, line/space -1:6 h. C2 -Horizontal lines, 30 nm, line /spacc -1:6 c. C3 -Horizontal lines, 40 nm, line /spacc -1:6 d. C4 -horizontal lines, SO nm, line/space -1:6 e. CS -horizontal lines, 70 nm, line/space -1:6 f. C6 -horizontal lines, 100 nm, line (space -1:6 g. C7 -Horizontal lines, 200 nm, line /space -1:6 h. CS -Horizontal lines, 400 nm, line /space -1:6 i. C9 -Horizontal lines, 500 nm, line /space -1:6 j. C10 -Horizontal lines, 1000 nm, line /spaee -1:6 UJ0321 The sub-fields of fields D I-DIG of the fourth row of fields may exhibit the following characteristics: a. Dl -Verical lines, 20 nm, line (space -1: 1 h. D2 -Vertical lines, 30 nm, line (space -1: 1 c. D3 -Vertical lines, 40 nm, line (space -1:1 d. D4 -Vertical lines, 50 mn, line (space -1:1 e. D5 -Verical lines, 70 nm, line (space -1: 1 I.. D6 -Vertical lines, 1 00 nm, line /spacc -1: 1 g. D7 -Vertical lines, 200 nm, line /space -1:1 h. D8 -Vertical lines, 400 nm, line (space -1:! i. D9 -Vertical lines, 800 nm, line (space -1:! j. 1)10 -Vertical lines,1000 rim, line (space -1: 1 [00331 The sub-liekis of Fields El-Plo of the Iiith FOW of flelds may exhibil the following characteristics: a. El -Vertical lines, 20 nm, line (space -1:2 h. P2 -Vertical lines, 30 nm, line (space -1:2 c. P3 -Vertical lines, 40 nm, line (space -1:2 d. P4 -Vertical lines, 50 nm, line (space -1:2 e. P5 -Vertical lines, 70 nm, line (space -1:2 I.. PG -Vertical lines, IOU nm, line /space -1:2 g. P7 -Vertical lines, 200 nm, line (space -1:2 h. P8 -Vertical lines, 400 nm, line (space -1:2 I. P9 -Vertical lines, 800 nm, line /space -1:2 j. PlO -Vertical lines,! 000 nm, line /space -1:2 [0034] The suh-fields of fields F! -Fl 0 of the sixth row of fields may exhibit the following characteristics a. Fl -Vertical lines, 20 nm, line /space -1:6 b. F2 -Vertical lines, 30 rim, line /spaee -1:6 c. P3 -Vertical lines, 40 nm, line (space -1:6 d. P4 -Vertical lines, 50 nm, line (space -1:6 e. P5 -Vertical lines, 70 nm, line (space -1:6 F6 -Vertical lines, IOU nm, line (space - g. Fl -Vertical lines, 200 nm, line (space - h. F8 -Vertical lines, 400 nm, line (space -1:6 i. P9 -Vertical lines, 800 nm, line /spaee -1:6 j. PlO -Vertical lines,I000 nm, line/space -1:6 [0035] The sub-fields of fields Ui-Gb of the seventh row of fields may exhibit the following characteristics: a. (11 -Isolated I lorizontal lines, 20 nm, line /space -1:50 h. (32 -Isolated Horizontal lines, 30 nm, line /spaee-1:30 c. (33 -Isolated Horizontal lines, 40 nm, line /spaee-1:25 d. (34 -isolated Horizontal lines, 50 nm, line /spaee -1:20 e. 05 -Isolated horizontal lines, 70 nm, line isp ace -1:20 f 06 -Isolated horizontal lines, 100 nm, line/space -1:20 g. (37 -Isolated I lorizontal lines, 200 nm, line/space -1:20 h. 08 -Isolated Horizontal lines, 400 nm, line/space -1:5 i. 09 -Isolated Horizontal lines, 800 nm, line/space -1:5 j. 010-isolated Horiiontal lines, 1000 nm, line /spacc -1:3 UJ0361 The sub-fields of fields HI-HI 0 of the eighth row of fields may exhibit the following characteristics a. Hi -isolated Vertical lines, 20 nm, line /space-1:50 h. H2 -isolated Vertical lines, 30 nfl, line /space-1:30 c. H3 -isolated Vertical lines, 40 nfl, line /space-1:25 d. H4 -Isolated Vertical lines, 50 nm, line Isp ace -1:20 e. H5 -Isolated Vertical lines, 70 nm, line Isp ace -1:20 11 H6 -Tsolatcd Vertical lines, I 00 mn, line Ispace -1:20 g. H7 -isolated Vci-tical lines, 200 nm, line Ispace -1:20 h. MS -isolatcd Vertical lines, 400 nm, line /space-1:5 i. H9 -Isolated Vertical lines, 800 rim, line Ispaee -1:5 j. HiD-Isolated Vertical lines, 1000 nm, line /spaee-I:3 [@037j The sub-fields of fields 11-110 of the ninth row of fields may exhibit the following characteristics a. II -Contaci holes, 60 nm, line Ispaee -1:2 h. 12 -Conlaci holes, 70 nm, line /spaee -1:2 C. 13 -Conlaci holes, 80 nm, line /spaee -1:2 d. 14 -Contaci holes, 90 nm, line /spaee -1:2 e. 15 -Contact holcs, I 00 nm, line /space -1:2 16 -Contact hoics, 200 nm, line /space -1:2 g. 17 -Contact hoics, 400 nm, line /spacc -1:2 h. T8 -Contact holcs, 600 nm, line (space -1:2 i. T9 -Contact holcs, 800 nm, line (space -1:2 j. 110-Contact holes, 1000 nm, linc /space -1:2 [003S] Sub-fields of fields Al-AiD, Bi-BlO, C1-C1O, D1-D1O, El-Eli), Fl-FlU, 01-610,111-1110 and 11-110 can he sized according to an array of beams in which the beams are spaced aparl hy a pitch of 10 microns. In the above dcscription for the Sub-fields of fields Al-AlO, Bi-BlO, Ci-ClO, D1-DI0, El-HO, Fl-Fit), (il-GIG, HI-HID and 11410 the numbers given in nm describe the distances between two neighbored structures, Ihe ratios "line / space" deline the ratios between the width of Ihe siructum and the distance between two neighbored structures, "horizontal" means a particularly selected direction, "vertical" means a direction is perpendicular to the "horizontal" direction and "contact holes" means stmcLws which have similar or equal dimensions in two perpendicular directions.

[0039] Sub-fields of fields Atl-A20, Btt-B20. Clt-C20, D11-D20. E1i-E20, F11-F20, 011-020. nil- 1120 and 111-120 can be equivalent to sub-fields of fields Al-A 10, B I -BlO, Ci-ClO, DI-D ID, El -FIG, Fl-FiG, 01-010, 111-1110 and 11-110 but are sized according to an array of beams in which the beams are spaced apart by a pitch of 11 microns.

[00401 Sub-fields of fields Jl-J10, Ki-K10, Li-L10, MI-Mb, Nt-Nb, 01-010, Pb-PlO, Q1-QlO, Ri-Rb and 51-510 can be equivaleni to sub-fields of Fields Al-A 10, Bi-BlO, C1-C1O, DI-DiO, El-ElO, Fi-FlO, 61-010, HI-HiD and 11-110 but are sited according to an array of beams in which the beams are spaced apart by a pitch of 12 microns.

[00411 Sub-fields of fields JIl-J20, K11-K20, L1l-L20, MIi-M20, N11-N20, 011-020, PIl-P20, Q11-Q20, R11-R20 and Si I-S20 can be equivalent to sub-fields of fields Al-AlO, BI -B 10, Cl-Cl 0, DI-DiD, El-El 0, Fl-I-JO, 01-010, Hi-HI0 and 11-110 but are sized according to an array of beams in which the beams are spaced apart by a pitch of 13 microns.

[0042] Sub-fields of fields JI I and J 12 are like sub-fields of fields J I, J2 hut are sized according to an array ol beams in which the beams are spaced apart by a pitch of 11 microns.

[0043] Sub-field of fields Ti and T2 are like sub-field of fields Ii, 12 but are sized according to an array of beams in which the beams are spaced apart by a pitch of 12 microns.

[0044] Sub-field of fields Iii and 112 are like sub-field of fields Ji. J2 but are sized according to an array of beams in which the beams are spaced apart by a pitch of 13 microns.

[0045] Sub-field of fields J13-J20 are like sub-field of fields J3-JiO but are sized according to an array of beams in which the beams are spaced apart by a pitch of 11 microns.

[0046] Sub-field of fields T3-T1O are like sub-field of fields J3-J10 but are sized according to an array of beams in which the beams are spaced apart by a pitch of 1 2 microns.

[0047] Sub-field of fields T13-T20 are like sub-field of fields J3-Jl0 hut are sized according to an array of beams in which the beams are spaced apart by a pitch of 1 3 microns. Ii

[0048] However also other sizes of the sub-fields are possible especially if the pitch between the individual beams in the beam array is different.

[0049] Figures 3-6 and 10 illustrate sub-fields of a field of the test object of figure 1, according to vanous embodiments of the invention. Figures 3-6 illustrate a sub-field of lields that include 127 identical sub-lields. fins corresponds to an array of beams that includes 127 beams that are spaced apart by a pitch of 10 microns. For each beam in the array of beams one sub-field is provided. The position of each sub-field in the field and thc distances between the sub-ficlds in the fields corresponds to the positions and distances of the individual beam in the array of beams in the object plane of the multi-beam system. The array of beams may he shaped as honeycomb or as a hexagon.

It is noted that the array of beams may he of any shape (including for example non-hexagon shapes) and the sub-fields can be of any shape -especially of a shape that corresponds to the shape of the array of beams. Non-limiting examples of the array of the sub-fields may include a rectangular array, a square, a triangle or any other shape. The shapes of the array of sub-fields and the array of beams may differ from each other.

[0050] Figure 7 illustrates a sub-field of field A2 70 according to an embodiment of the invention.

Tt includes: (a) border elements such a dashed line and triangular shapes 75, (h) patterns (structural elements) such as horizontal lines 76, (e) pitch 71, (d) pattern recognition targets 72, (e) line -space ratio indication 73, (f line size 74, and (g) sub-held number (for example I till 127).

[005 I] it is noted that the array can be rectangular.

[0052] Figure 7 illustrates a sub-field 70 that is 13 jim by I 1.39 jim and has lines of width of 30 nm, line space ration of 1:2.

[0053] The border lines can be 0.5 micron wide. l'he triangles can provide an indication about errors in the vertical and horizontal directions. The triangles can he spaced apart by 3 microns and have a width of I micron. the sub-held can include five different pattern recognition patterns.

[0054] Figure 8 illustrates a sub-Held of a held according to an embodiment of the invention. It includes an array of circles or holes.

[0055] Figure 9 illustrates a sub-field of field.11 90 according to an embodiment of the invention, it includes four arrays of rectangles. Each array of rectangles includes multiple co-centered rectangles.

[0056] Figure 10 illustrates a sub-field of field.J2 100 according to an embodiment of the invention.

All the sub-fields of held J2 except the central sub-held are hat and do not have a feature. The central sub-held (denotcd 1/1) has holes. The diameter of thc holes is IOU nm, thc pitch bctwccn holes is 300nm and the depth of each hole is 2000nm.

[0057] Figure I I illustrates a sub-field of lields.13, J4 and J5 according 10 an embodimcnt of the invention. Each sub-field has multiple horiíontal lines. The lines of sub-lields J3, .14 and J5 can differ by each other by the pitch between the horizontal line, by the width of the horizontal lines or by both.

[005S] Figure 12 illustrates a sub-field of fields J6, J7 and J8 according to an embodiment of the invention. Each sub-held has multiple vertical lines. The lines of sub-fields J6, J7 and J8 can di her by each othcr by the pitch between the vertical line, by the width of the vertical lines or by both.

[0059] Figure 13 illustrates a sub-field of fields J9 and J 10 according to an embodiment of the invention. Each sub-field has a mesh of lines oriented at 45 degrees and 135 degrees in relation to the horizontal direction as defined above. The lines of sub-fields J9 and J10 can differ by each other by the pitch between the vertical line, by the width of the vertical lines or by both.

[0060] Figure 14 iflustrates a method 140 according to an embodiment of the invention.

[0061] Method 140 may include stage 142 of obtaining images of sub-fields of a held of a test object by scanning the sub-hields by an array of beams; wherein the test object comprises multiple regions, wherein each region comprises multiplc ficids: wherein each field comprises multiple sub-fields; whcrein each sub-held comprises multiple structural elements; whcrcin a location and number of sub-fields of a same held correspond to a number of an array of beams of the multiple beam systcm and to an expected spatial relationship between the array of beams.

Stage 142 may he followed by stage 144 of evaluating at least one spatial or optical characteristic of the array of beams bascd on the images of the sub-fields. The evaluation can include comparing the images obtaincd by each beam ol the array to expected images to be obtaincd.

[0062] Method 140 can be applied on the mentioned above tcst object.

[0063] While certain fcaturcs of the invention have bcen illustrated and descrihcd herein, many modi lications, substitutions, changes, and equivalents will now occur to those of ordinary skill in the art. it is, therefore, to he understood that thc appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.

Claims (1)

  1. <claim-text>WE CLAIMA test object br Lesling a multiple beam system, the test object comprises multiple regions, wherein each region comprises multiple fields; wherein each field comprises multiple sub-fields; wherein each sub-held comprises multiple patterns structural elements: wherein a location and number of sub-lields of at least one held correspond to a number of beams in an array of beams of thc multiple beam system and to an cxpcctcd spatial relationship between the array olbeams.</claim-text> <claim-text>2. the tcst object according to claim 1, wherein the size of cach field corresponds to thcfield of view (FOV) of thc multiple beam system.</claim-text> <claim-text>3. ftc tcst ohiect according to claim 1, wherein the suh-ficlds that belong to a same field are identical to each other at Icast in areal portions.</claim-text> <claim-text>4. the tcst object according to claim 1, wherein sub-fields that belong to different fields diffcr from cach other by at least onc spatial characteristic of patterns that belong to the differentfields.</claim-text> <claim-text>5. the tcst object according to claim 1, wherein each sub-field comprises a boarder that comprises hoarder palterns, multiple patterns and textual information about the sub-held.</claim-text> <claim-text>6. The test object according to claim 1, wherein different sub-fields differ from each other by at least one out of spacing between features, a size of features, a shape of features.</claim-text> <claim-text>7. The test object according to claim 1, comprising multiple groups of lields; wherein different groups of hields differ from each other by at least one of size and shape; wherein a difference in the site or shape corresponds to a difference in a spatial relationship between the array of beams.</claim-text> <claim-text>8. The test object according to claim 1, wherein the sie of each field is larger than the field of view (rOY) of the multiple beam system.</claim-text> <claim-text>9. A method for evaluating a multiple beam system, the method comprising: obtaining images of sub-fields of a field of a test object by scanning the sub-fields by an array of beams: wherein the test object comprises multiple regions, wherein each region comprises multiple fields; wherein each field comprises multiple sub-fields; wherein each sub-field comprises multiple structural elements; wherein a location and number of sub-fields of at least one held correspond to a number of an array of beams of the multiple beam system and to an expected spatial relationship between the array of beams; and evaluating at least one spatial or oplical characteristic of the array of beams based on theimages of Ihe sub-fields.</claim-text> <claim-text>10. The method as substantially illusiraled in the drawings.</claim-text> <claim-text>11. The test object as substantially illustrated in the drawings.</claim-text> <claim-text>12. The method as substantially illustrated in the specification.</claim-text> <claim-text>13. The test objeci as suhslantially illustrated in Ihe speeilication.IS</claim-text>
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