WO2020070074A1 - Vielstrahl-teilchenstrahlsystem und verfahren zum betreiben eines solchen - Google Patents

Vielstrahl-teilchenstrahlsystem und verfahren zum betreiben eines solchen

Info

Publication number
WO2020070074A1
WO2020070074A1 PCT/EP2019/076472 EP2019076472W WO2020070074A1 WO 2020070074 A1 WO2020070074 A1 WO 2020070074A1 EP 2019076472 W EP2019076472 W EP 2019076472W WO 2020070074 A1 WO2020070074 A1 WO 2020070074A1
Authority
WO
WIPO (PCT)
Prior art keywords
openings
elements
particle beam
excitations
multipole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2019/076472
Other languages
German (de)
English (en)
French (fr)
Inventor
Dirk Zeidler
Christof Riedesel
Arne Thoma
Georgo Metalidis
Jörg Jacobi
Stefan Schubert
Ralf Lenke
Ulrich Bihr
Yanko Sarov
Georg Kurij
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss Microscopy GmbH
Original Assignee
Carl Zeiss Microscopy GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Microscopy GmbH filed Critical Carl Zeiss Microscopy GmbH
Priority to CN201980064424.5A priority Critical patent/CN113169017B/zh
Priority to KR1020217012661A priority patent/KR102579698B1/ko
Priority to EP19782549.0A priority patent/EP3861565B1/de
Priority to JP2021518111A priority patent/JP7206380B2/ja
Priority to KR1020237031206A priority patent/KR20230135167A/ko
Priority to EP25195212.3A priority patent/EP4625469A3/de
Publication of WO2020070074A1 publication Critical patent/WO2020070074A1/de
Priority to US17/215,995 priority patent/US12255040B2/en
Anticipated expiration legal-status Critical
Priority to JP2023000167A priority patent/JP7667403B2/ja
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472Deflecting along given lines
    • H01J37/1474Scanning means
    • H01J37/1475Scanning means magnetic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10Lenses
    • H01J37/14Lenses magnetic
    • H01J37/141Electromagnetic lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472Deflecting along given lines
    • H01J37/1474Scanning means
    • H01J37/1477Scanning means electrostatic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/045Diaphragms
    • H01J2237/0451Diaphragms with fixed aperture
    • H01J2237/0453Diaphragms with fixed aperture multiple apertures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153Correcting image defects, e.g. stigmators
    • H01J2237/1532Astigmatism
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245Detection characterised by the variable being measured
    • H01J2237/24564Measurements of electric or magnetic variables, e.g. voltage, current, frequency

Definitions

  • Multi-beam particle beam system and method for operating such a system
  • the invention relates to multi-beam particle beam systems which work with a large number of particle beams, and to methods for operating multi-beam particle beam systems.
  • US 2015/0348738 A1 discloses multi-beam particle beam systems which use a plurality of multi-aperture plates in order to divide a particle beam into a multiplicity of particle beams and in order to influence individual particle beams of the multiplicity of particle beams by providing electrical fields.
  • ring electrodes are used at openings of a multi-aperture plate through which particle beams pass, in order to provide electrostatic fields focusing the particle beam, and electrodes arranged in the circumferential direction around the openings are used, dipole fields or
  • Multi-aperture plates are complex components, the production of which is very complex. Errors that occur inevitably during production lead to one or more electrodes being defective, so that their voltage cannot be set to the desired values during operation. If only one electrode out of the many electrodes of a multi-aperture plate is defective, this usually means that the entire multi-aperture plate is defective and cannot be used. Defects on individual electrodes of a multi-aperture plate that occur during operation also mean that the entire multi-aperture plate must be replaced. A reject perceived as too high in the production of multi-aperture plates and a failure probability perceived as too high during the operation of
  • Multi-aperture plates seem to be accepted here. One possible way out of this situation is to develop more reliable ones
  • a method for operating a multi-beam particle beam system includes generating a plurality of
  • Particle beams pass through a multipole element, each multipole element having a plurality of deflection elements which are arranged circumferentially around a center of the multipole element, and each of the multipole elements is either intact or defective.
  • the large number of particle beams can be generated in a variety of ways.
  • a particle emitter can be generated with the aid of a particle emitter, which is directed onto a multi-aperture plate with a multiplicity of openings, so that the multiplicity of particle beams is generated in the beam path behind the multi-aperture plate.
  • a variety of particle emitters be provided, wherein each particle emitter generates a particle beam of the plurality of particle beams.
  • the particle beam system typically comprises particle optics, which directs the large number of particle beams onto an object and focuses there.
  • Particle optics do not have to be error-free and can be subject to aberrations.
  • one of the aberrations is an astigmatism, the effect of which on a given particle beam of the plurality of particle beams which form a beam, from the position of the particle beam within the
  • the multipole elements are provided, each of the multipole elements being penetrated by one of the particle beams.
  • Deflection elements of the multipole element which are arranged circumferentially distributed around a center of the multipole element, are excited during operation in order to generate fields which penetrate the multipole element
  • the fields influencing the particle beam can be electrical fields and / or magnetic fields.
  • the deflection elements can have electrodes for generating electrical fields and coils for generating
  • the deflection elements can then be excited such that focusing each of the particle beams in a predetermined plane satisfies at least one predetermined criterion.
  • the predetermined plane can be, for example, the surface of an object to which the particle beams are directed.
  • the predetermined criterion can, for example, require that the respective particle beam be focused in the predetermined plane in such a way that the cross section of the particle beam in this plane is as small as possible or has a predetermined value, or that the shape of the cross section is one Deviation from a circular shape that is smaller than a limit. Other criteria are possible.
  • Another exemplary multipole element has eight in
  • a controller In order to excite the deflection elements during the operation of the particle beam system, a controller can be provided, which controls the deflection elements with the
  • Deflection elements are electrodes, the electrical lines are electrically conductive connections which are suitable for conducting a voltage provided by the control to the respective electrode. If the baffles are coils, they are Lines of electrically conductive connections which are able to conduct a current necessary to excite the coil to the coil.
  • Errors can occur in multi-aperture plates, which lead to individual multi-pin elements not being intact but defective.
  • a single deflection element of the multipole element can be defective in that it cannot be excited as desired during operation.
  • an electrical line leading to the relevant deflection element can be a
  • an electrode which forms the relevant deflection element may have an insulation defect, so that this electrode is conductively connected to the multi-aperture plate or to another electrode and, for this reason, cannot assume a desired voltage.
  • a coil, which forms a given deflection element can have an open circuit or a short circuit, so that a
  • the method may further include energizing the deflection elements of the multipole elements that are intact with the determined excitations.
  • embodiments determine a size for each of the multipole elements, which represents a desired influence on the particle beam passing through the multipole element.
  • the at least one size can include, for example, the size of a beam astigmatism, which of the
  • Particle beam is such that the influencing of the particle beam represented by the at least one size is achieved.
  • the excitations of the deflection elements of each multipole element can in particular be determined in such a way that an average of the excitations of the multipole element has a value that is the same for all multipole elements.
  • Average value can be calculated as the arithmetic mean of the excitations of the deflection elements of the multipole element. For example, if the deflection elements are electrodes, determining the excitations includes determining electrical voltages, and energizing the deflection elements includes applying the determined voltages to the electrodes. The mean value of the excitations is then given by the mean value of the voltages applied to the electrodes. If this mean value is the same for all multipole elements operated, for example, as stigmators, the effects of the individual multipole elements or stigmators differ only in terms of their deflecting and
  • the deflection elements of the multipole elements which are intact, can then be excited with the excitations determined as described above.
  • the method may further include modifying the particular excitations for the deflection elements of at least one multipole element of the multipole elements that are defective and energizing the electrodes of the defective multipole element with the modified excitations.
  • the modification of the excitations of the deflecting elements of the defective multipole element takes into account the fact that, for example, the excitation of one of the deflecting elements is not freely adjustable but is fixed.
  • modifying the particular excitations includes determining the modulated excitations such that the defective deflecting element is energized such that its excitation is equal to the defined excitation. For example, a correction excitation can be determined, which is added to the determined excitation of the defective deflection element by the to calculate modified excitation, the correction excitation being as large as the difference between the specified excitation and the specific excitation.
  • modifying the particular excitations for the deflection elements of a multipole element includes adding correction excitations to the particular excitations.
  • the correction excitations are the same for all deflection elements of a given defective multipole element, but they can be different for different defective multipole elements.
  • Production of the multi-aperture plates can thus be reduced. If a defect occurs during the operation of the multi-beam particle beam system, the excitation of the deflection elements of the multi-pole elements of the multi-aperture plate can also occur
  • Multipole element the previously described modified excitations are supplied. It is thus possible for multi-beam particle beam systems to also exist after defects in multipole elements of a multi-aperture plate
  • the at least one deflecting element can comprise, for example, an electrode which is connected to a voltage source in order to supply the electrode with an adjustable voltage in order to generate an electric field or to change an existing electric field which affects the particles of the opening
  • Particle beam passes exactly one opening of the plurality of multi-aperture plates, at which the at least one controllable deflection element is provided.
  • Multi aperture plates is the number of openings that can be controlled
  • Deflection elements have less than the number of particle beams.
  • the several multi-aperture plates have in common on the multitude of
  • a second subset of openings is provided in at least one of the multiple multi-aperture plates, which are not included in the first subset and which have at least one deflection element, although excitation of this at least one deflection element is fixed and cannot be set independently.
  • the openings of the first and the second subset differ in that the deflection elements of the openings of the second subset are not excitable, for example by no supply lines being provided to supply excitation to the deflection elements of the openings of the second subset.
  • a method for operating a multi-beam particle beam system comprises a
  • Multi-aperture plate with openings, at least one at each
  • Electrode is provided as a deflecting element, determining at least one
  • Multi-aperture plates for multi-beam particle beam systems are
  • a multi-aperture plate comprises a substrate made of doped silicon, which is a conductive material.
  • a layer of Si0 2 is applied to the substrate, which acts as an insulator.
  • the conductor tracks are formed by an aluminum layer, which was applied to the Si0 2 layer and structured by means of lithographic processes.
  • the conductor tracks serve, for example, to supply electrical potentials or electrical currents to the deflection elements which are provided at openings in the multi-aperture plate.
  • the conductor tracks should not be interrupted and on the other hand the
  • Conductor tracks have no contact with the electrically conductive substrate.
  • the insulating Si0 2 layer is too thin and therefore has a finite resistance. A resulting current flow between the conductor track and the substrate can be so great that a voltage or current source for providing the excitations to be supplied to the deflection elements is overloaded. It may be the case that the insulating Si0 2 layer is not uniformly thin, but is too thin in some localized areas due to the manufacturing process. It is assumed that the behavior of the electrical resistance between the conductor track and the substrate has the characteristic of a Schottky contact in these regions.
  • High-voltage pulses to a defective interconnect can correct a short circuit between the interconnect and the substrate.
  • Multi-aperture plate each at least one controllable deflection element is provided, and a voltage supply system which is configured to supply adjustable excitations via feed lines to the deflection elements of the at least one multi-aperture plate. This means that during the operation of the multi-beam particle beam system, each deflection element of the at least one multi-aperture plate has an adjustable excitation from it
  • Power supply system can be supplied.
  • Multi-aperture plates can be assigned to several groups of openings, with each opening contained in one group of openings not being contained in another of the groups of openings. This means that several of the groups under consideration do not contain common openings or that the groups are disjoint.
  • This possible division of the openings into groups applies to a majority of the openings of the multi-aperture plate, but not necessarily to all openings of the multi-aperture plate. For example, the division into groups applies to more than half of the openings of the multi-aperture plate.
  • all openings of each given group of openings each have at least one deflection element which is connected to a given supply line, so that deflection elements from several openings of the same group are connected together to this given supply line.
  • Deflection elements of all openings of a multi-aperture plate can be supplied with independently adjustable excitations. This ensures that each particle beam that passes through an opening of the multi-aperture plate can be influenced by the electrical and / or magnetic fields provided by the deflection elements in exactly the same way as is desired or necessary for this particle beam.
  • the inventors have found that in practice many deflection elements have to be supplied with the same or similar excitations in order to influence the particle beams with a view to compensating for aberrations of other optical elements in the beam path of the particle beams.
  • the inventors have found that if the openings have a plurality of deflecting elements, for example the opening
  • neighboring openings receive the same or similar excitation patterns around which the neighboring ones
  • the deflection elements which are connected to the common feed line are supplied with the same excitation, so that the excitations of these deflection elements can no longer be set independently of one another.
  • Multi aperture plate can be significantly reduced. Nevertheless, it is possible that
  • the groups of openings can be chosen so that at least some Deflection elements of the openings of the same group can be supplied with the same excitations.
  • a plurality of openings of each given group each have an opening as the nearest neighbor, which also belongs to this given group of openings. This means that in the plane of the multi-aperture plate, closely adjacent openings belong to a common group. The idea behind this is that the neighboring ones
  • Openings of the multi-aperture plate require similar excitations for your deflection elements in order to allow the particle beams passing through this opening, for example with a view to compensating for an imaging error of one of the
  • Embodiments is a number of openings that belong to the same group of openings, arithmetically averaged over all groups of openings of the multi-aperture plate from a range between 2.0 and 3.0.
  • the openings of each given group and in particular the openings of all groups of openings have an equal number of deflecting elements, such as eight deflecting elements, which are arranged circumferentially around the opening.
  • Figure 1 is a schematic representation of a multi-beam particle beam system
  • Figure 2 is a schematic cross-sectional view of an arrangement
  • FIG. 3 shows a top view of a first multi-aperture plate of the illustration in FIG. 2;
  • FIG. 4 shows a plan view of a second multi-aperture plate from FIG. 2;
  • Figure 5 is a schematic plan view of a variant of the multi-aperture plates of Figures 3 and 4;
  • FIG. 6 shows a schematic illustration of an intact multipole element which is excited with certain excitations
  • FIG. 8 shows a schematic illustration of the defective multipole element of FIG. 7, which is excited with modified excitations
  • FIG. 9 shows a flow chart to explain a method for operating a
  • FIG. 10 shows a schematic illustration of beam astigmatisms to be corrected for a multiplicity of openings of a multi-aperture plate
  • FIG. 11 illustrates an electrical circuit for feeding
  • Figure 12 is a schematic representation of a corresponding to Figure 10
  • FIG. 1 is a schematic illustration of a multi-beam particle beam system 1 which works with a large number of particle beams.
  • the multi-beam particle beam system 1 generates a multiplicity of particle beams which impinge on an object to be examined in order to generate electrons there which emanate from the object and are subsequently detected.
  • the multi-beam particle beam system 1 is of the scanning electron microscope (SEM) type, which uses a plurality of primary electron beams 3 which impinge on a surface of the object 7 at locations 5 and several there
  • the object 7 to be examined can be of any type and can comprise, for example, a semiconductor wafer, a biological sample and an arrangement of miniaturized elements or the like.
  • the surface of the object 7 is one in an object plane 101
  • Objective lens 102 of an objective lens system 100 is arranged.
  • the enlarged section II of FIG. 1 shows a plan view of the object plane 101 with a regular rectangular field 103 of impact points 5, which are formed in the plane 101.
  • the number of impact locations is 25, which form a 5 ⁇ 5 field 103.
  • the number 25 of impact locations is a small number chosen for the sake of simplicity. In practice, the number of rays or impact points can be chosen to be substantially larger, such as 20 x 30, 100 x 100 and the like.
  • the field 103 of impact sites 5 is a substantially regular rectangular field with a constant distance PI between adjacent impact sites.
  • Exemplary values of the distance PI are 1 micron, 10 microns and 40 microns.
  • the field 103 has other symmetries, such as a hexagonal symmetry.
  • a diameter of the beam spots formed in the object plane 101 can be small. Exemplary values of this diameter are 1 nanometer, 5 nanometer, 100 nanometer and 200 nanometer.
  • the particle beams 3 are focused by the objective lens system 100 to form the beam spots 5.
  • the particles hitting the object generate electrons, which are emitted by the
  • the inspection system 1 provides an electron beam path 11 in order to supply the plurality of electron beams 9 to a detection system 200.
  • the detection system 200 comprises electron optics with a projection lens 205 in order to direct the electron beams 9 onto an electron multi-detector 209.
  • the primary electron beams 3 are generated in a beam generating device 300, which has at least one electron source 301, at least one
  • Electron beam 309 which is collimated by collimation lens 303 to form a beam 311 which illuminates multi-aperture plate assembly 305.
  • the section 13 in Figure 1 shows a plan view of the
  • the multi-aperture plate arrangement 305 comprises a multi-aperture plate 313, which has a plurality of ones formed therein
  • Center points 317 of the openings 315 are arranged in a field 319 which corresponds to the field 103 which is formed by the beam spots 5 in the object plane 101.
  • Openings 315 from one another can have exemplary values of 5 micrometers
  • Electrons of the illuminating beam 311 pass through the openings 315 and form electron beams 3. Electrons of the illuminating beam 311, which strike the plate 313, are intercepted by the latter and do not contribute to the formation of the electron beams 3.
  • the diameter of the focus 323 can be, for example, 10 nanometers, 100 nanometers and 1 micrometer.
  • the field lens 307 and the objective lens 102 provide a first imaging
  • Particle optics ready to image the plane 325, in which the foci are formed, on the object plane 101, so that there a field 103 of impact points 5 or beam spots is formed on the surface of the object 7.
  • Multi aperture plate 313 are oriented.
  • the stigmators 333 of the first multi-aperture plate 331 and the stigmators 337 of the second multi-aperture plate 335 are each formed by eight deflection elements 334, which are arranged circumferentially around the openings 339.
  • deflection elements 334 are not provided at each of the openings 339 of the multi-aperture plates 331 and 335. Rather, deflection elements 334 are provided on a first subset of the openings 339 of the first multi-aperture plate 331 and on a first subset of the openings 339 of the second multi-aperture plate 335.
  • each particle beam which penetrates openings 339 of the first multi-aperture plate 331 and the second multi-aperture plate 335 passes through exactly one opening 339 on the deflection elements 334 are provided.
  • FIG. 3 shows a top view of the first multi-aperture plate 331 with the stigmators 333
  • FIG. 4 shows a top view of the second multi-aperture plate 335 with the stigmators 337. It can be seen from FIGS. 3 and 4 that the first and second multi-aperture plates 331, 335 each 61 have openings 339, which are arranged in a hexagonal pattern. Both multi-aperture plates 331 and 335 have openings 339, at which in the circumferential direction around the respective one
  • Deflection elements 334 arranged in an opening 339 are provided. However, both multi-aperture plates 331 and 335 also have openings 339 at which no deflection elements 334 are arranged.
  • a line 345 in FIG. 3 frames the subset of openings 339 of the first multi-aperture plate 331, which are provided with deflection elements 334. This first subset of
  • Openings 339 are 19 openings 339 of the first multi-aperture plate 331, which are arranged centrally in the hexagonal pattern of the openings 339.
  • a line 347 in FIG. 3 frames all openings 339 of the first multi-aperture plate 331.
  • the openings 339 which are arranged outside the line 345 and inside the line 347, form a second subset of openings 339, at which no deflection elements 334 are provided.
  • the openings 339 of the second subset of openings 339 of the first multi-aperture plate 331 lie on the edge of the hexagonal arrangement of openings 339.
  • Lines 345 and 347 are also shown in Figure 4. However, there the openings 339, which belong to the first subset of openings 339, on which deflection elements 334 are provided, are arranged outside the line 345 and inside the line 347, while the openings 339 of the second
  • Subset with openings 339 which have no deflection elements 334, are arranged within the line 345. It can be seen that the arrangement of the first and second subset of openings 339 on the first
  • Multi-aperture plate 331 complementary to the arrangement of the first and second Part of the second multi-aperture plate 335 is such that the condition is met that each particle beam passes through exactly one opening of the two multi-aperture plates 331 and 335, on which deflection elements 334 are provided.
  • Each of the two multi-aperture plates 331 and 335 comprises feed lines 349 in order to feed the deflection elements 334 adjustable excitations, which are provided by supply circuits 351. Few of the
  • Feed lines 349 are shown in FIGS. 3 and 4. If the
  • Deflection elements 334 are electrodes for generating electrical fields, so the supply circuits 351 are voltage supplies. If the deflection elements 334 are coils for generating magnetic fields, then they are
  • Supply circuits 351 power supplies.
  • the supply circuits 351 are controlled by a controller 353 in order to supply the excitation elements 334 with suitable excitations. It can be seen that the number of supply lines 349 required to excite the deflection elements 334 is a multiple of the number of openings 339 of the first subset. However, since the number of openings 339 of the first subsets of the respective multi-aperture plates 331 and 335 is less than the total number of openings 339 of the respective multi-aperture plate 331 and 335, the number of supply lines 349 is that which is on one of the two
  • Multi aperture plates 331 and 335 must be provided compared to the
  • the deflection elements 334 are provided at all openings 339.
  • deflection elements 334 are also at openings 339 of the second subsets of openings 339 of the plurality
  • Multi aperture plates 331, 335 are provided.
  • the deflection elements 334 of the second subset of openings 339 cannot be controlled by these deflection elements not being connected to the voltage sources or current sources 351 by line connections 349.
  • FIG. 5 shows a further modification of the multi-aperture plate arrangement 305 explained with reference to FIGS. 2 to 4, which differs from the multi-aperture plate arrangement of FIGS. 2 to 4 in that the first and second subsets of openings are arranged on the multi-aperture plates.
  • Figure 5 shows one
  • FIG. 5 Top view of the first multi-aperture plate 331 with stigmators 333.
  • Lines 361 in FIG. 5 each surround a group of openings 339 of a first subset of openings 339, which are provided with controllable deflection elements 334, while a second subset of openings 339 not surrounded by lines 361 controllable deflection elements does not have.
  • the groups surrounded by the lines are arranged as arrow or boomerang-shaped figures.
  • the associated second multi-aperture plate 335 which is not shown in the figures, has an arrangement of the openings 339 of the first subset which is complementary to the first subset shown in FIG.
  • FIG. 6 is a schematic illustration of a plan view of deflection elements 334, which extends in the circumferential direction around a center 371 of an opening
  • Multi aperture plate are arranged distributed.
  • the deflection elements 334 together form a stigmator 333 for the targeted compensation of a
  • the deflection elements are excited with excitations which are determined in such a way that the beam astigmatism is largely compensated for.
  • FIG. 7 is a representation of deflection elements 334 corresponding to FIG. 6, although a deflection element designated 334 'is defective.
  • the supply line to this deflection element 334 ' is interrupted, or the deflection element 334' is connected to ground, for example, or the like. If the deflection elements or electrodes 334 of FIG. 7 are the ones previously determined
  • Electrode 334 'does not accept voltage V 4 . Rather, this electrode assumes a different voltage due to the defect, which is shown in FIG. 7 as V err
  • FIG. 8 is an illustration of the deflection elements 334 of FIG. 7 with the defective deflection element 334 '. However, the deflection elements of FIG. 8 are excited with excitations that are modified compared to FIGS. 7 and 6. The
  • modified excitations are determined by adding correction excitations to the previously determined excitations of FIG. 6.
  • the electrodes 334 are supplied with voltages Vi + dV, V 2 + dV, ... V 8 + dV.
  • the Correction excitations dV the same for all deflection elements.
  • the value of the correction excitation dV is determined so that the following relation is fulfilled:
  • V 4 + dV V err .
  • the modified voltage to be supplied to the defective electrode 334 ' is equal to the voltage which the defective electrode assumes due to its defect, it is possible to actually excite the deflection elements with the modified excitations. There are also differences in excitement between individuals
  • Stigmators 333 applied certain voltages increased by the value dV.
  • the modified excitations on the beam passing through the defective stigmator 333 of FIG. 8 have an additional effect of a focusing lens compared to the beam passing through the intact stigmator 333 of FIG. In some situations, this additional effect can be a possibly disadvantageous effect on the beam, which can be accepted, since the advantageous effect of compensating the beam astigmatism outweighs the defective stigmator.
  • a method for operating a particle beam device is explained below using the flow chart shown in FIG. 9.
  • beam astigmatisms of the plurality of particle beams with which the multi-beam particle beam system works are determined in a step S1. This determination can be made on the basis of measurements which are carried out using the multi-beam particle beam system be made. However, it is also possible for the determination to be carried out on the basis of information which is stored, for example, in a database.
  • a step S3 voltages are determined which are to be applied to electrodes of stigmators in order to compensate for the beam astigmatisms.
  • a step S5 it is determined which stigmators are intact and which
  • Stigmators are defective. This determination can in turn be carried out by measurements on the multi-beam particle beam system. Furthermore, it is possible that the intact and the defective stigmators are already known and
  • Determinations in step S5 can be made by evaluating this information.
  • the database can be kept, for example, outside the multi-beam particle beam system, in a controller of the multi-beam particle beam system or in a memory which is on or on the
  • Multi-aperture plate with the stigmators is arranged.
  • step S3 The voltages determined in step S3 are applied in step S7 to those stigmators which were identified in step S5 as intact stigmators.
  • step S9 modified voltages are determined in step S9 by adding to the voltages determined in step S3
  • step S9 The modified voltages determined in step S9 are applied to the defective stigmators in step S11.
  • suitable voltages are applied to both the electrodes of the intact stigmators and the electrodes of the defective stigmators in order to suitably influence the particle beams passing through the stigmators in step S13. Then the multi-beam
  • the multipole elements have eight deflection elements and are operated as stigmators.
  • the explained principles of deviating the particular excitations are generally applicable to multipole elements which have at least two deflection elements arranged in the circumferential direction around a center.
  • the deflection elements of the multipole elements are electrodes which are excited by the application of voltages in order to generate electric fields which deflect the particles of the particle beam passing through the multipole element.
  • the variation of the particular excitations is also applicable to multipole elements whose deflection elements are coils that are excited by the application of currents to generate magnetic fields that deflect particles of the particle beam passing through the multipole element.
  • FIG. 10 shows an array of 91 vectors 361.
  • Each of the vectors 361 represents an influence on a particle beam which has an opening in a
  • Multi-aperture plate 331 interspersed.
  • the influencing is an astigmatic
  • Influence and the vectors 361 represent the strength of the astigmatic influence by their length and the orientation of the astigmatic influence by their direction.
  • the feet of the Vectors arranged at the center of a respective opening of the multi-aperture plate.
  • the openings of the explained multi-aperture plate 331 are arranged in a hexagonal pattern.
  • Each of the openings of the multi-aperture plate 331 comprises eight deflecting elements which are arranged circumferentially around the opening.
  • Deflection elements can be supplied with adjustable excitations in order to provide an electrical and / or magnetic quadrupole field with a strength and an orientation in the opening such that one with regard to their strength and
  • penetrating particle beam can take place.
  • the vectors 361 have a large number of different lengths and different orientations.
  • adjacent vectors often have lengths and orientations that do not differ greatly from one another.
  • the deflection elements of adjacent openings are often supplied with the same excitation patterns, for the
  • Deflection elements of these adjacent openings are used common feed lines.
  • FIG. 11 shows two stigmators 333, each with eight deflection elements 343, each of which in the circumferential direction around a center 371 of an opening in the
  • Multi-aperture plate 331 are arranged.
  • the total number of deflection elements 343 of the two stigmators 333 is therefore sixteen. These sixteen deflection elements 343 are only excited by a voltage supply system 351 eight leads 363 supplied.
  • the leads 363 can be formed on the surface of the multi-aperture plate.
  • Feed lines are formed in two conductive layers on a substrate of the multi-aperture plate, the conductive layers being insulated from one another and electrically conductive connections being able to be produced between the two layers.
  • FIG. 12 is a representation of the field of vectors 361 corresponding to FIG. 10 and additionally represents the assignment of openings of the
  • Multi aperture plate 331 to groups 365 of openings.
  • No opening belongs to two different groups 365. Not all openings have to belong to a group 365. For example, seven openings, which are arranged near the center of the multi-aperture plate 331, do not belong to any of the groups 365.
  • the division of the openings into the groups 365 is selected such that the vectors 361 of openings of the same group 365 do not differ greatly from one another in terms of their length and their orientation. Two to three openings are each contained in a group 365. Since the vectors 361 of each group 365 do not differ greatly from one another in terms of their length and orientation, provision is made for the deflection elements of openings in each group to be supplied with excitation by common feed lines, as is the case in FIG Openings is shown. It is then possible, at each opening of a given group 365, to influence the particle beam passing through the opening not exactly, but almost as is ideally desired and as represented by the array of vectors 361 in FIG. 10. It has been shown that the division of the openings of a multi-aperture plate into groups, as is shown by way of example in FIG. 12, can be maintained in many application situations of a multi-beam particle beam system.
  • the division of the openings of a multi-aperture plate into groups can be maintained in many application situations of a
  • Application situations can differ, for example, with regard to the kinetic energy of the particle beams passing through the openings of the multi-aperture plate or the particle beams directed at an object in the beam path behind the multi-aperture plate. For several different kinetic energies, an equal division of the opening of the
  • Multi-aperture plates in groups lead to a good result of the ability to influence the particle beams. This means that it can make sense to define the supply of excitation to the deflection elements of a multi-aperture plate by means of common supply lines in the manufacture of the multi-aperture plate, to integrate the multi-aperture plate in a multi-beam partial beam system, and then to use the multi-beam particle beam system in a variety of situations use.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electron Beam Exposure (AREA)
  • Powder Metallurgy (AREA)
PCT/EP2019/076472 2018-10-01 2019-09-30 Vielstrahl-teilchenstrahlsystem und verfahren zum betreiben eines solchen Ceased WO2020070074A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CN201980064424.5A CN113169017B (zh) 2018-10-01 2019-09-30 多束式粒子束系统及其操作方法
KR1020217012661A KR102579698B1 (ko) 2018-10-01 2019-09-30 멀티빔 입자 빔 시스템 및 그 동작 방법
EP19782549.0A EP3861565B1 (de) 2018-10-01 2019-09-30 Verfahren zum betreiben eines vielstrahl-teilchenstrahlsystems
JP2021518111A JP7206380B2 (ja) 2018-10-01 2019-09-30 マルチビーム粒子ビームシステム、及びマルチビーム粒子ビームシステムを動作させる方法
KR1020237031206A KR20230135167A (ko) 2018-10-01 2019-09-30 멀티빔 입자 빔 시스템 및 그 동작 방법
EP25195212.3A EP4625469A3 (de) 2018-10-01 2019-09-30 Verfahren zum betreiben eines vielstrahl-teilchenstrahlsystems
US17/215,995 US12255040B2 (en) 2018-10-01 2021-03-29 Multi-beam particle beam system and method for operating same
JP2023000167A JP7667403B2 (ja) 2018-10-01 2023-01-04 マルチビーム粒子ビームシステム、及びマルチビーム粒子ビームシステムを動作させる方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018124219.0A DE102018124219A1 (de) 2018-10-01 2018-10-01 Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
DE102018124219.0 2018-10-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/215,995 Continuation US12255040B2 (en) 2018-10-01 2021-03-29 Multi-beam particle beam system and method for operating same

Publications (1)

Publication Number Publication Date
WO2020070074A1 true WO2020070074A1 (de) 2020-04-09

Family

ID=68136382

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2019/076472 Ceased WO2020070074A1 (de) 2018-10-01 2019-09-30 Vielstrahl-teilchenstrahlsystem und verfahren zum betreiben eines solchen

Country Status (7)

Country Link
US (1) US12255040B2 (https=)
EP (2) EP3861565B1 (https=)
JP (2) JP7206380B2 (https=)
KR (2) KR20230135167A (https=)
CN (1) CN113169017B (https=)
DE (1) DE102018124219A1 (https=)
WO (1) WO2020070074A1 (https=)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11158482B2 (en) 2018-02-16 2021-10-26 Carl Zeiss Multisem Gmbh Multi-beam particle microscope
US11164715B2 (en) 2018-05-21 2021-11-02 Carl Zeiss Multisem Gmbh Charged particle beam system
US11239053B2 (en) 2018-02-27 2022-02-01 Carl Zeiss Multisem Gmbh Charged particle beam system and method
US11239054B2 (en) 2018-02-16 2022-02-01 Carl Zeiss Multisem Gmbh Multi-beam particle beam system
US11521827B2 (en) 2019-01-24 2022-12-06 Carl Zeiss Multisem Gmbh Method of imaging a 2D sample with a multi-beam particle microscope
US11562880B2 (en) 2018-09-27 2023-01-24 Carl Zeiss Multisem Gmbh Particle beam system for adjusting the current of individual particle beams
US11645740B2 (en) 2018-09-21 2023-05-09 Carl Zeiss Multisem Gmbh Method for detector equalization during the imaging of objects with a multi-beam particle microscope
US11657999B2 (en) 2015-02-06 2023-05-23 Carl Zeiss Multisem Gmbh Particle beam system and method for the particle-optical examination of an object
US11735393B2 (en) 2018-09-28 2023-08-22 Carl Zeiss Multisem Gmbh Method for operating a multi-beam particle beam microscope
US11935721B2 (en) 2019-01-24 2024-03-19 Carl Zeiss Multisem Gmbh System comprising a multi-beam particle microscope and method for operating the same
US12057290B2 (en) 2019-07-31 2024-08-06 Carl Zeiss Multisem Gmbh Method for operating a multiple particle beam system while altering the numerical aperture, associated computer program product and multiple particle beam system
US12249478B2 (en) 2019-06-13 2025-03-11 Carl Zeiss Multisem Gmbh Particle beam system for azimuthal deflection of individual particle beams and method for azimuth correction in a particle beam system
US12255040B2 (en) 2018-10-01 2025-03-18 Carl Zeiss Multisem Gmbh Multi-beam particle beam system and method for operating same
US12272519B2 (en) 2021-07-01 2025-04-08 Carl Zeiss Multisem Gmbh Method for area-wise inspecting a sample via a multi-beam particle microscope, computer program product and multi-beam particle microscope for semiconductor sample inspection, and its use
US12283457B2 (en) 2021-01-29 2025-04-22 Carl Zeiss Multisem Gmbh Multiple particle beam microscope and associated method with an improved focus setting taking into account an image plane tilt
US12293896B2 (en) 2018-06-21 2025-05-06 Carl Zeiss Multisem Gmbh Particle beam system
US12340973B2 (en) 2019-11-27 2025-06-24 Carl Zeiss Multisem Gmbh Particle beam system including a multi-beam deflection device and a beam stop, method for operating the particle beam system and associated computer program product
US12431324B2 (en) 2020-02-04 2025-09-30 Carl Zeiss Multisem Gmbh Multi-beam digital scan and image acquisition
US12494343B2 (en) 2020-09-30 2025-12-09 Carl Zeiss Multisem Gmbh Multiple particle beam microscope and associated method with fast autofocus around an adjustable working distance
US12512291B2 (en) 2020-03-20 2025-12-30 Carl Zeiss Multisem Gmbh Particle beam system having a multi-pole lens sequence for independently focusing a multiplicity of individual particle beams, and its use and associated method
US12586749B2 (en) 2020-03-12 2026-03-24 Carl Zeiss Multisem Gmbh Certain improvements of multi-beam generating and multi-beam deflecting units
US12603245B2 (en) 2020-09-09 2026-04-14 Carl Zeiss Multisem Gmbh Multiple particle beam system with a contrast correction lens system
US12609282B2 (en) 2021-05-27 2026-04-21 Carl Zeiss Multisem Gmbh Multi-beam charged particle system and method of controlling the working distance in a multi-beam charged particle system

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4385053A1 (en) * 2021-08-10 2024-06-19 Carl Zeiss MultiSEM GmbH Multi-beam generating unit with increased focusing power
CN119054040A (zh) * 2022-04-11 2024-11-29 华为技术有限公司 一种粒子矫正器和粒子系统
CN119013755A (zh) * 2022-04-12 2024-11-22 华为技术有限公司 一种粒子系统和粒子束的矫正方法
JP2024131429A (ja) 2023-03-16 2024-09-30 セイコーエプソン株式会社 メンテナンスユニット、及び液体吐出装置
TW202529141A (zh) 2023-09-26 2025-07-16 德商卡爾蔡司多重掃描電子顯微鏡有限公司 具有增強聚焦功率的多束生成單元
WO2025108569A1 (en) 2023-11-23 2025-05-30 Carl Zeiss Multisem Gmbh Multi-beam charged particle microscope design with improved detection system for secondary electron imaging over a large range of landing energies of primary electrons

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005024881A2 (en) 2003-09-05 2005-03-17 Carl Zeiss Smt Ag Particle-optical systems, components and arrangements
US20050087701A1 (en) * 2003-10-28 2005-04-28 Ims Nanofabrication Gmbh Pattern-definition device for maskless particle-beam exposure apparatus
WO2007028595A2 (en) 2005-09-06 2007-03-15 Carl Zeiss Smt Ag Particle -optical component
WO2007060017A2 (en) 2005-11-28 2007-05-31 Carl Zeiss Smt Ag Particle-optical component
US20100178602A1 (en) * 2009-01-09 2010-07-15 Canon Kabushiki Kaisha Charged particle beam writing apparatus and device production method
DE102013014976A1 (de) 2013-09-09 2015-03-12 Carl Zeiss Microscopy Gmbh Teilchenoptisches System
US20150069260A1 (en) * 2013-09-11 2015-03-12 Ims Nanofabrication Ag Charged-particle multi-beam apparatus having correction plate
DE102013016113A1 (de) 2013-09-26 2015-03-26 Carl Zeiss Microscopy Gmbh Verfahren zum Detektieren von Elektronen, Elektronendetektor und Inspektionssystem
US20150348738A1 (en) 2014-05-30 2015-12-03 Car Zeiss Microscopy GmbH Particle beam system

Family Cites Families (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2854153A (en) * 1956-06-06 1958-09-30 Rudolph C Rydberg Automatic veneer laying machine
JPS52119178A (en) 1976-03-31 1977-10-06 Toshiba Corp Electron beam exposure device
CA1100237A (en) 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system
US4200794A (en) 1978-11-08 1980-04-29 Control Data Corporation Micro lens array and micro deflector assembly for fly's eye electron beam tubes using silicon components and techniques of fabrication and assembly
US4338548A (en) 1980-01-30 1982-07-06 Control Data Corporation Unipotential lens assembly for charged particle beam tubes and method for applying correction potentials thereto
JPS59184524A (ja) 1983-04-04 1984-10-19 Nippon Telegr & Teleph Corp <Ntt> 電子ビ−ム露光装置
JPS6042825A (ja) 1983-08-19 1985-03-07 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPS60105229A (ja) 1983-11-14 1985-06-10 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JPH0789530B2 (ja) 1985-05-17 1995-09-27 日本電信電話株式会社 荷電ビ−ム露光装置
US4742234A (en) 1985-09-27 1988-05-03 American Telephone And Telegraph Company, At&T Bell Laboratories Charged-particle-beam lithography
JP2609599B2 (ja) * 1987-02-06 1997-05-14 株式会社日立製作所 平板形陰極線管
JP2523931B2 (ja) 1990-04-16 1996-08-14 富士通株式会社 ブランキングアパ―チャアレ―の製造方法
EP1369897A3 (en) 1996-03-04 2005-01-19 Canon Kabushiki Kaisha Electron beam exposure apparatus and method, and device manufacturing method
US5892224A (en) 1996-05-13 1999-04-06 Nikon Corporation Apparatus and methods for inspecting wafers and masks using multiple charged-particle beams
JP3796317B2 (ja) 1996-06-12 2006-07-12 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
JP3927620B2 (ja) 1996-06-12 2007-06-13 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法
JP3728015B2 (ja) 1996-06-12 2005-12-21 キヤノン株式会社 電子ビーム露光システム及びそれを用いたデバイス製造方法
US5981954A (en) 1997-01-16 1999-11-09 Canon Kabushiki Kaisha Electron beam exposure apparatus
US6107636A (en) 1997-02-07 2000-08-22 Canon Kabushiki Kaisha Electron beam exposure apparatus and its control method
JP3787417B2 (ja) 1997-06-11 2006-06-21 キヤノン株式会社 電子ビーム露光方法及び電子ビーム露光装置
US6333508B1 (en) 1999-10-07 2001-12-25 Lucent Technologies, Inc. Illumination system for electron beam lithography tool
JP3763446B2 (ja) 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
JP4585661B2 (ja) 2000-03-31 2010-11-24 キヤノン株式会社 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法
JP2001284230A (ja) 2000-03-31 2001-10-12 Canon Inc 電子光学系アレイ、これを用いた荷電粒子線露光装置ならびにデバイス製造方法
JP4947841B2 (ja) 2000-03-31 2012-06-06 キヤノン株式会社 荷電粒子線露光装置
US6787780B2 (en) 2000-04-04 2004-09-07 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
EP1150327B1 (en) 2000-04-27 2018-02-14 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi beam charged particle device
EP1296351A4 (en) 2000-06-27 2009-09-23 Ebara Corp INVESTIGATION DEVICE FOR LOADED PARTICLE RAYS AND METHOD FOR PRODUCING A COMPONENT ELEVATED WITH THIS INSPECTION DEVICE
US7241993B2 (en) 2000-06-27 2007-07-10 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
DE60134922D1 (de) 2000-08-14 2008-09-04 Elith Llc Lithographischer Apparat
EP1271604A4 (en) 2001-01-10 2005-05-25 Ebara Corp APPARATUS AND METHOD FOR INSPECTING ELECTRON BEAM, AND DEVICE MANUFACTURING METHOD COMPRISING THE INSPECTION APPARATUS
JP4246401B2 (ja) 2001-01-18 2009-04-02 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム偏向装置
JP2002237270A (ja) * 2001-02-09 2002-08-23 Ebara Corp 荷電粒子ビーム偏向装置及びそれを用いた荷電粒子ビーム欠陥検査装置及び方法
JP4647820B2 (ja) 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法
JP4756776B2 (ja) 2001-05-25 2011-08-24 キヤノン株式会社 荷電粒子線露光装置、荷電粒子線露光方法およびデバイス製造方法
DE10127217B4 (de) 2001-06-05 2005-09-15 Infineon Technologies Ag Verfahren zur Herstellung lagegenauer großflächiger Membranmasken
DE10138882B4 (de) 2001-08-08 2005-09-08 Infineon Technologies Ag Großflächige Membranmaske und Verfahren zu ihrer Herstellung
US6818911B2 (en) 2002-04-10 2004-11-16 Canon Kabushiki Kaisha Array structure and method of manufacturing the same, charged particle beam exposure apparatus, and device manufacturing method
JP4220209B2 (ja) 2002-09-27 2009-02-04 株式会社アドバンテスト 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
JP4025613B2 (ja) 2002-09-27 2007-12-26 株式会社アドバンテスト 電子ビーム露光装置、電子ビーム露光装置校正方法、及び半導体素子製造方法
US6953938B2 (en) 2002-10-03 2005-10-11 Canon Kabushiki Kaisha Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus
US7015467B2 (en) 2002-10-10 2006-03-21 Applied Materials, Inc. Generating electrons with an activated photocathode
AU2003276779A1 (en) 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
JP4313691B2 (ja) * 2003-02-14 2009-08-12 日本電子株式会社 荷電粒子光学装置
JP2004282038A (ja) 2003-02-28 2004-10-07 Canon Inc 偏向器、偏向器を製造する方法、偏向器を適用した荷電粒子線露光装置
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP2005019258A (ja) * 2003-06-27 2005-01-20 Hitachi High-Technologies Corp 電子ビームを用いた検査装置
JP4459568B2 (ja) 2003-08-06 2010-04-28 キヤノン株式会社 マルチ荷電ビームレンズおよびそれを用いた荷電ビーム露光装置
WO2005074002A2 (en) 2004-01-29 2005-08-11 Applied Materials Israel, Ltd. Focusing system and method for a charged particle imaging system
US7326901B2 (en) 2004-04-15 2008-02-05 Applied Materials, Israel, Ltd. High throughput multi beam system and method
US7420164B2 (en) 2004-05-26 2008-09-02 Ebara Corporation Objective lens, electron beam system and method of inspecting defect
US7285779B2 (en) 2004-06-21 2007-10-23 Applied Materials Israel, Ltd. Methods of scanning an object that includes multiple regions of interest using an array of scanning beams
US7375326B2 (en) 2004-06-21 2008-05-20 Applied Materials, Israel, Ltd. Method and system for focusing a charged particle beam
US7468507B2 (en) 2005-01-26 2008-12-23 Applied Materials, Israel, Ltd. Optical spot grid array scanning system
US20090212213A1 (en) 2005-03-03 2009-08-27 Ebara Corporation Projection electron beam apparatus and defect inspection system using the apparatus
WO2006101116A1 (ja) 2005-03-22 2006-09-28 Ebara Corporation 電子線装置
US7504622B2 (en) 2006-04-03 2009-03-17 Applied Materials, Israel, Ltd. High throughput multi beam detection system and method
US8134135B2 (en) 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
US9153413B2 (en) 2007-02-22 2015-10-06 Applied Materials Israel, Ltd. Multi-beam scanning electron beam device and methods of using the same
EP2019415B1 (en) * 2007-07-24 2016-05-11 IMS Nanofabrication AG Multi-beam source
JP5107812B2 (ja) * 2008-07-08 2012-12-26 株式会社日立ハイテクノロジーズ 検査装置
US8350214B2 (en) 2009-01-15 2013-01-08 Hitachi High-Technologies Corporation Charged particle beam applied apparatus
EP2556527B1 (en) 2010-04-09 2017-03-22 Carl Zeiss Microscopy GmbH Charged particle detection system and multi-beamlet inspection system
DE102010026169B4 (de) 2010-07-06 2014-09-04 Carl Zeiss Microscopy Gmbh Partikelstrahlsystem
CN103238202B (zh) 2010-09-28 2016-11-09 以色列实用材料有限公司 粒子光学系统及布置,以及用于这种系统及布置的粒子光学组件
JP5606292B2 (ja) 2010-11-19 2014-10-15 キヤノン株式会社 描画装置、物品の製造方法、偏向装置の製造方法、および、描画装置の製造方法
JP5683227B2 (ja) 2010-11-19 2015-03-11 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
US9530613B2 (en) 2011-02-18 2016-12-27 Applied Materials Israel, Ltd. Focusing a charged particle system
JP2012195097A (ja) 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
US8362425B2 (en) 2011-03-23 2013-01-29 Kla-Tencor Corporation Multiple-beam system for high-speed electron-beam inspection
NL2007604C2 (en) 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US9702983B2 (en) 2011-05-03 2017-07-11 Applied Materials Israel, Ltd. Multi-spot collection optics
JP5822535B2 (ja) 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013004216A (ja) 2011-06-14 2013-01-07 Canon Inc 荷電粒子線レンズ
GB2494118A (en) 2011-08-28 2013-03-06 Applied Materials Israel Ltd Test object for testing an array of beams
JP2013239667A (ja) 2012-05-17 2013-11-28 Canon Inc 荷電粒子線静電レンズにおける電極とその製造方法、荷電粒子線静電レンズ、及び荷電粒子線露光装置
JP2014007261A (ja) 2012-06-22 2014-01-16 Canon Inc 静電偏向器、描画装置およびデバイスの製造方法
JP2014007013A (ja) 2012-06-22 2014-01-16 Canon Inc 静電レンズアレイ、マルチ荷電粒子光学系、及びフォーカス調整方法
JP2014229481A (ja) 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
GB2519511A (en) 2013-09-27 2015-04-29 Zeiss Carl Microscopy Gmbh Particle optical system having a liner tube and/or compensating coils
US9263233B2 (en) * 2013-09-29 2016-02-16 Carl Zeiss Microscopy Gmbh Charged particle multi-beam inspection system and method of operating the same
EP3454357B1 (en) 2013-09-30 2020-08-12 Carl Zeiss Microscopy GmbH Charged particle beam system and method of operating the same
GB2521819A (en) 2013-11-22 2015-07-08 Zeiss Carl Microscopy Gmbh Particle optical arrangement for a charged particle optical system
US20150311031A1 (en) * 2014-04-25 2015-10-29 Ims Nanofabrication Ag Multi-Beam Tool for Cutting Patterns
NL2012780B1 (en) 2014-05-08 2016-02-23 Univ Delft Tech Apparatus and method for inspecting a sample using a plurality of charged particle beams.
DE102014008105B4 (de) 2014-05-30 2021-11-11 Carl Zeiss Multisem Gmbh Mehrstrahl-Teilchenmikroskop
DE102014008383B9 (de) 2014-06-06 2018-03-22 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zum Betreiben einer Teilchenoptik
DE102015202172B4 (de) 2015-02-06 2017-01-19 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts
US9691588B2 (en) * 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
WO2016145458A1 (en) * 2015-03-10 2016-09-15 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US9607805B2 (en) 2015-05-12 2017-03-28 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US10410831B2 (en) * 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US9922799B2 (en) 2015-07-21 2018-03-20 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
EP3809124A3 (en) 2015-07-22 2022-03-16 Hermes Microvision Inc. Apparatus of plural charged-particle beams
DE102015013698B9 (de) 2015-10-22 2017-12-21 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskops
CN114420523B (zh) * 2015-11-30 2025-04-15 Asml荷兰有限公司 多个带电粒子束的设备
CN113192815B (zh) 2016-01-27 2024-10-29 Asml荷兰有限公司 多个带电粒子束的装置
JP6709109B2 (ja) * 2016-05-31 2020-06-10 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム照射装置
KR20250127344A (ko) 2016-12-30 2025-08-26 에이에스엠엘 네델란즈 비.브이. 다수의 하전 입자 빔을 사용하는 장치
WO2018172186A1 (en) 2017-03-20 2018-09-27 Carl Zeiss Microscopy Gmbh Charged particle beam system and method
DE102018202421B3 (de) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem
DE102018202428B3 (de) 2018-02-16 2019-05-09 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenmikroskop
WO2019166331A2 (en) 2018-02-27 2019-09-06 Carl Zeiss Microscopy Gmbh Charged particle beam system and method
US10811215B2 (en) 2018-05-21 2020-10-20 Carl Zeiss Multisem Gmbh Charged particle beam system
DE102018115012A1 (de) * 2018-06-21 2019-12-24 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem
JP7030663B2 (ja) 2018-09-12 2022-03-07 株式会社東芝 半導体装置及び荷電粒子線露光装置
DE102018007455B4 (de) 2018-09-21 2020-07-09 Carl Zeiss Multisem Gmbh Verfahren zum Detektorabgleich bei der Abbildung von Objekten mittels eines Mehrstrahl-Teilchenmikroskops, System sowie Computerprogrammprodukt
DE102018007652B4 (de) 2018-09-27 2021-03-25 Carl Zeiss Multisem Gmbh Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
DE102018124044B3 (de) 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
DE102018124219A1 (de) 2018-10-01 2020-04-02 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
DE102018133703B4 (de) 2018-12-29 2020-08-06 Carl Zeiss Multisem Gmbh Vorrichtung zur Erzeugung einer Vielzahl von Teilchenstrahlen und Vielstrahl-Teilchenstrahlsysteme
CN111477530B (zh) 2019-01-24 2023-05-05 卡尔蔡司MultiSEM有限责任公司 利用多束粒子显微镜对3d样本成像的方法
TWI743626B (zh) 2019-01-24 2021-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品
US10741355B1 (en) 2019-02-04 2020-08-11 Carl Zeiss Multisem Gmbh Multi-beam charged particle system
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
DE102019005364B3 (de) 2019-07-31 2020-10-08 Carl Zeiss Multisem Gmbh System-Kombination eines Teilchenstrahlsystem und eines lichtoptischen Systems mit kollinearer Strahlführung sowie Verwendung der System-Kombination

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005024881A2 (en) 2003-09-05 2005-03-17 Carl Zeiss Smt Ag Particle-optical systems, components and arrangements
US20050087701A1 (en) * 2003-10-28 2005-04-28 Ims Nanofabrication Gmbh Pattern-definition device for maskless particle-beam exposure apparatus
WO2007028595A2 (en) 2005-09-06 2007-03-15 Carl Zeiss Smt Ag Particle -optical component
WO2007028596A1 (en) 2005-09-06 2007-03-15 Carl Zeiss Smt Ag Charged particle inspection method and charged particle system
WO2007060017A2 (en) 2005-11-28 2007-05-31 Carl Zeiss Smt Ag Particle-optical component
US20100178602A1 (en) * 2009-01-09 2010-07-15 Canon Kabushiki Kaisha Charged particle beam writing apparatus and device production method
DE102013014976A1 (de) 2013-09-09 2015-03-12 Carl Zeiss Microscopy Gmbh Teilchenoptisches System
US20150069260A1 (en) * 2013-09-11 2015-03-12 Ims Nanofabrication Ag Charged-particle multi-beam apparatus having correction plate
DE102013016113A1 (de) 2013-09-26 2015-03-26 Carl Zeiss Microscopy Gmbh Verfahren zum Detektieren von Elektronen, Elektronendetektor und Inspektionssystem
US20150348738A1 (en) 2014-05-30 2015-12-03 Car Zeiss Microscopy GmbH Particle beam system
DE102014008083A1 (de) 2014-05-30 2015-12-17 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11657999B2 (en) 2015-02-06 2023-05-23 Carl Zeiss Multisem Gmbh Particle beam system and method for the particle-optical examination of an object
US11239054B2 (en) 2018-02-16 2022-02-01 Carl Zeiss Multisem Gmbh Multi-beam particle beam system
US11158482B2 (en) 2018-02-16 2021-10-26 Carl Zeiss Multisem Gmbh Multi-beam particle microscope
US11239053B2 (en) 2018-02-27 2022-02-01 Carl Zeiss Multisem Gmbh Charged particle beam system and method
US11164715B2 (en) 2018-05-21 2021-11-02 Carl Zeiss Multisem Gmbh Charged particle beam system
US11562881B2 (en) 2018-05-21 2023-01-24 Carl Zeiss Multisem Gmbh Charged particle beam system
US12293896B2 (en) 2018-06-21 2025-05-06 Carl Zeiss Multisem Gmbh Particle beam system
US11645740B2 (en) 2018-09-21 2023-05-09 Carl Zeiss Multisem Gmbh Method for detector equalization during the imaging of objects with a multi-beam particle microscope
US11562880B2 (en) 2018-09-27 2023-01-24 Carl Zeiss Multisem Gmbh Particle beam system for adjusting the current of individual particle beams
US12094683B2 (en) 2018-09-28 2024-09-17 Carl Zeiss Multisem Gmbh Method for operating a multi-beam particle beam microscope
US12488958B2 (en) 2018-09-28 2025-12-02 Carl Zeiss Multisem Gmbh Method for operating a multi-beam particle beam microscope
US11735393B2 (en) 2018-09-28 2023-08-22 Carl Zeiss Multisem Gmbh Method for operating a multi-beam particle beam microscope
US12255040B2 (en) 2018-10-01 2025-03-18 Carl Zeiss Multisem Gmbh Multi-beam particle beam system and method for operating same
US11935721B2 (en) 2019-01-24 2024-03-19 Carl Zeiss Multisem Gmbh System comprising a multi-beam particle microscope and method for operating the same
US12300462B2 (en) 2019-01-24 2025-05-13 Carl Zeiss Multisem Gmbh System comprising a multi-beam particle microscope and method for operating the same
US11521827B2 (en) 2019-01-24 2022-12-06 Carl Zeiss Multisem Gmbh Method of imaging a 2D sample with a multi-beam particle microscope
US12249478B2 (en) 2019-06-13 2025-03-11 Carl Zeiss Multisem Gmbh Particle beam system for azimuthal deflection of individual particle beams and method for azimuth correction in a particle beam system
US12119204B2 (en) 2019-07-31 2024-10-15 Carl Zeiss Multisem Gmbh Particle beam system and the use thereof for flexibly setting the current intensity of individual particle beams
US12057290B2 (en) 2019-07-31 2024-08-06 Carl Zeiss Multisem Gmbh Method for operating a multiple particle beam system while altering the numerical aperture, associated computer program product and multiple particle beam system
US12340973B2 (en) 2019-11-27 2025-06-24 Carl Zeiss Multisem Gmbh Particle beam system including a multi-beam deflection device and a beam stop, method for operating the particle beam system and associated computer program product
US12431324B2 (en) 2020-02-04 2025-09-30 Carl Zeiss Multisem Gmbh Multi-beam digital scan and image acquisition
US12586749B2 (en) 2020-03-12 2026-03-24 Carl Zeiss Multisem Gmbh Certain improvements of multi-beam generating and multi-beam deflecting units
US12512291B2 (en) 2020-03-20 2025-12-30 Carl Zeiss Multisem Gmbh Particle beam system having a multi-pole lens sequence for independently focusing a multiplicity of individual particle beams, and its use and associated method
US12603245B2 (en) 2020-09-09 2026-04-14 Carl Zeiss Multisem Gmbh Multiple particle beam system with a contrast correction lens system
US12494343B2 (en) 2020-09-30 2025-12-09 Carl Zeiss Multisem Gmbh Multiple particle beam microscope and associated method with fast autofocus around an adjustable working distance
US12283457B2 (en) 2021-01-29 2025-04-22 Carl Zeiss Multisem Gmbh Multiple particle beam microscope and associated method with an improved focus setting taking into account an image plane tilt
US12609282B2 (en) 2021-05-27 2026-04-21 Carl Zeiss Multisem Gmbh Multi-beam charged particle system and method of controlling the working distance in a multi-beam charged particle system
US12272519B2 (en) 2021-07-01 2025-04-08 Carl Zeiss Multisem Gmbh Method for area-wise inspecting a sample via a multi-beam particle microscope, computer program product and multi-beam particle microscope for semiconductor sample inspection, and its use

Also Published As

Publication number Publication date
DE102018124219A1 (de) 2020-04-02
JP2023041684A (ja) 2023-03-24
EP3861565A1 (de) 2021-08-11
KR20230135167A (ko) 2023-09-22
JP7206380B2 (ja) 2023-01-17
US12255040B2 (en) 2025-03-18
JP2022501794A (ja) 2022-01-06
EP4625469A2 (de) 2025-10-01
KR102579698B1 (ko) 2023-09-18
KR20210068084A (ko) 2021-06-08
US20210217577A1 (en) 2021-07-15
CN113169017B (zh) 2024-08-20
EP3861565B1 (de) 2025-08-13
EP4625469A3 (de) 2026-01-14
JP7667403B2 (ja) 2025-04-23
CN113169017A (zh) 2021-07-23

Similar Documents

Publication Publication Date Title
EP3861565B1 (de) Verfahren zum betreiben eines vielstrahl-teilchenstrahlsystems
DE102018007652B4 (de) Teilchenstrahl-System sowie Verfahren zur Stromregulierung von Einzel-Teilchenstrahlen
DE102018133703B4 (de) Vorrichtung zur Erzeugung einer Vielzahl von Teilchenstrahlen und Vielstrahl-Teilchenstrahlsysteme
DE102019004124B4 (de) Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
DE102014008083B4 (de) Teilchenstrahlsystem
DE102018202421B3 (de) Vielstrahl-Teilchenstrahlsystem
DE102020107738B3 (de) Teilchenstrahl-System mit einer Multipol-Linsen-Sequenz zur unabhängigen Fokussierung einer Vielzahl von Einzel-Teilchenstrahlen, seine Verwendung und zugehöriges Verfahren
DE102020125534B3 (de) Vielzahl-Teilchenstrahlmikroskop und zugehöriges Verfahren mit schnellem Autofokus um einen einstellbaren Arbeitsabstand
EP0281743B1 (de) Detektorobjectiv für Rastermikroskope
DE102020123567B4 (de) Vielzahl-Teilchenstrahl-System mit Kontrast-Korrektur-Linsen-System
DE102021118561B4 (de) Verfahren zum Betreiben eines Vielstrahl-Teilchenmikroskopes mit schneller Strahlstromregelung, Computerprogrammprodukt und Vielstrahl-Teilchenmikroskop
EP4004962A1 (de) Teilchenstrahlsystem und seine verwendung zum flexiblen einstellen der stromstärke von einzel-teilchenstrahlen
DE69920182T2 (de) Korpuskularstrahloptisches gerät mit auger-elektronendetektion
DE102021105201A1 (de) Vielzahl-Teilchenstrahlmikroskop und zugehöriges Verfahren mit schnellem Autofokus mit speziellen Ausführungen
DE60034559T2 (de) Vielstrahl-elektronenstrahl-lithographievorrichtung mit unterschiedlichen strahlblenden
DE102022131862A1 (de) Vielstrahl-Teilchenmikroskop umfassend eine Aberrationskorrektureinheit mit Geometrie-basierten Korrekturelektroden und Verfahren zum Einstellen der Aberrationskorrektur sowie Computerprogrammprodukt
DE10232689A1 (de) Mit Strahlen geladener Teilchen arbeitende Anwendungen
DE112018006761T5 (de) Einen strahl geladener teilchen anwendende vorrichtung
DE102021116969B3 (de) Verfahren zur bereichsweisen Probeninspektion mittels eines Vielstrahl-Teilchenmikroskopes, Computerprogrammprodukt und Vielstrahl-Teilchenmikroskop zur Halbleiterprobeninspektion
DE102023119451B4 (de) Vielstrahl-Teilchenstrahlsystem mit elektrostatischer Boosterlinse, Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlsystems und zugehöriges Computerprogrammprodukt
DE102020115183B4 (de) Teilchenstrahlsystem mit Multiquellensystem sowie Mehrstrahl-Teilchenmikroskop
DE102024127358A1 (de) Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems mit Detektion eines Ring-Kollaps-Prozesses und Triggern eines Materialaufbauprozesses, zugehöriges Computerprogrammprodukt sowie Vielzahl-Teilchenstrahlsystem und Vielstrahl-Teilchenmikroskop
DE69219926T2 (de) Kathodenstrahlröhre mit Elektronenstrahlerzeugersystem mit planparalleler Optik
DE102024128159B3 (de) Multiapertur-Array zum Manipulieren einer Vielzahl von geladenen ersten Einzelteilchenstrahlen sowie Vielzahl-Teilchenstrahlsystem mit dem Multiapertur-Array
DE102023101774B4 (de) Verfahren zum Auslegen eines Vielstrahl-Teilchenstrahlsystems mit monolithischen Bahnverlaufskorrekturplatten, Computerprogrammprodukt und Vielstrahl-Teilchenstrahlsystem

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19782549

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021518111

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20217012661

Country of ref document: KR

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2019782549

Country of ref document: EP

Effective date: 20210503

WWG Wipo information: grant in national office

Ref document number: 2019782549

Country of ref document: EP