JP7204436B2 - 欠陥除去方法及びSiCエピタキシャルウェハの製造方法 - Google Patents

欠陥除去方法及びSiCエピタキシャルウェハの製造方法 Download PDF

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JP7204436B2
JP7204436B2 JP2018215724A JP2018215724A JP7204436B2 JP 7204436 B2 JP7204436 B2 JP 7204436B2 JP 2018215724 A JP2018215724 A JP 2018215724A JP 2018215724 A JP2018215724 A JP 2018215724A JP 7204436 B2 JP7204436 B2 JP 7204436B2
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huge
contrast ratio
downfall
defect
sic epitaxial
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JP2020083671A5 (enExample
JP2020083671A (ja
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太一 岡野
貞孝 西原
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Resonac Holdings Corp
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Showa Denko KK
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JP2018215724A 2018-11-16 2018-11-16 欠陥除去方法及びSiCエピタキシャルウェハの製造方法 Active JP7204436B2 (ja)

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JPWO2022004181A1 (enExample) * 2020-07-02 2022-01-06
WO2022190458A1 (ja) * 2021-03-12 2022-09-15 住友電気工業株式会社 炭化珪素基板および炭化珪素基板の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211035A (ja) 2010-03-30 2011-10-20 Lasertec Corp 検査装置並びに欠陥分類方法及び欠陥検出方法
JP2018041942A (ja) 2016-08-31 2018-03-15 昭和電工株式会社 SiCエピタキシャルウェハ及びその製造方法、並びに、欠陥識別方法
JP2018039714A (ja) 2016-08-31 2018-03-15 昭和電工株式会社 SiCエピタキシャルウェハ及びその製造方法、並びに、ラージピット欠陥検出方法、欠陥識別方法
JP2018098394A (ja) 2016-12-14 2018-06-21 昭和電工株式会社 半導体ウェハの評価方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211035A (ja) 2010-03-30 2011-10-20 Lasertec Corp 検査装置並びに欠陥分類方法及び欠陥検出方法
JP2018041942A (ja) 2016-08-31 2018-03-15 昭和電工株式会社 SiCエピタキシャルウェハ及びその製造方法、並びに、欠陥識別方法
JP2018039714A (ja) 2016-08-31 2018-03-15 昭和電工株式会社 SiCエピタキシャルウェハ及びその製造方法、並びに、ラージピット欠陥検出方法、欠陥識別方法
JP2018098394A (ja) 2016-12-14 2018-06-21 昭和電工株式会社 半導体ウェハの評価方法

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