JP7201502B2 - マスクブランク、位相シフトマスク及び半導体デバイスの製造方法 - Google Patents

マスクブランク、位相シフトマスク及び半導体デバイスの製造方法 Download PDF

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JP7201502B2
JP7201502B2 JP2019056697A JP2019056697A JP7201502B2 JP 7201502 B2 JP7201502 B2 JP 7201502B2 JP 2019056697 A JP2019056697 A JP 2019056697A JP 2019056697 A JP2019056697 A JP 2019056697A JP 7201502 B2 JP7201502 B2 JP 7201502B2
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Prior art keywords
phase shift
film
silicon
layer
shift film
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JP2019174806A5 (enExample
JP2019174806A (ja
Inventor
仁 前田
順 野澤
康隆 堀込
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2019056697A 2018-03-26 2019-03-25 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法 Active JP7201502B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018058004 2018-03-26
JP2018058004 2018-03-26

Publications (3)

Publication Number Publication Date
JP2019174806A JP2019174806A (ja) 2019-10-10
JP2019174806A5 JP2019174806A5 (enExample) 2022-03-29
JP7201502B2 true JP7201502B2 (ja) 2023-01-10

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JP2019056697A Active JP7201502B2 (ja) 2018-03-26 2019-03-25 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

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Country Link
US (1) US20210026235A1 (enExample)
JP (1) JP7201502B2 (enExample)
KR (1) KR20200133377A (enExample)
CN (1) CN111902772A (enExample)
SG (1) SG11202009172VA (enExample)
TW (1) TWI854972B (enExample)
WO (1) WO2019188397A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7296927B2 (ja) * 2020-09-17 2023-06-23 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法、及び位相シフトマスク
JP7640293B2 (ja) * 2021-03-09 2025-03-05 テクセンドフォトマスク株式会社 位相シフトマスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び位相シフトマスクの修正方法
JP7558861B2 (ja) * 2021-03-23 2024-10-01 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
CN115202146A (zh) * 2021-04-14 2022-10-18 上海传芯半导体有限公司 移相掩膜版及其制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002535702A (ja) 1999-01-14 2002-10-22 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 減衰性位相シフト多層膜マスク
JP2014137388A (ja) 2013-01-15 2014-07-28 Hoya Corp マスクブランク、位相シフトマスクおよびこれらの製造方法
JP2015111246A (ja) 2013-11-06 2015-06-18 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP2016035559A (ja) 2014-08-04 2016-03-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
JP2016164683A (ja) 2014-12-26 2016-09-08 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP2016191877A (ja) 2015-03-31 2016-11-10 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクス、ハーフトーン位相シフトマスク及びハーフトーン位相シフトマスクブランクスの製造方法
JP2016191872A (ja) 2015-03-31 2016-11-10 信越化学工業株式会社 位相シフトマスクブランクス、位相シフトマスク及び位相シフトマスクブランクスの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3115185B2 (ja) 1993-05-25 2000-12-04 株式会社東芝 露光用マスクとパターン形成方法
US7781125B2 (en) * 2002-12-26 2010-08-24 Hoya Corporation Lithography mask blank
JP2010217514A (ja) 2009-03-17 2010-09-30 Toppan Printing Co Ltd フォトマスクの製造方法
JP5686216B1 (ja) * 2013-08-20 2015-03-18 大日本印刷株式会社 マスクブランクス、位相シフトマスク及びその製造方法
TW201537281A (zh) * 2014-03-18 2015-10-01 Hoya Corp 光罩基底、相偏移光罩及半導體裝置之製造方法
JP6341129B2 (ja) * 2015-03-31 2018-06-13 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
JP6058757B1 (ja) * 2015-07-15 2017-01-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6558326B2 (ja) * 2016-08-23 2019-08-14 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002535702A (ja) 1999-01-14 2002-10-22 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 減衰性位相シフト多層膜マスク
JP2014137388A (ja) 2013-01-15 2014-07-28 Hoya Corp マスクブランク、位相シフトマスクおよびこれらの製造方法
JP2015111246A (ja) 2013-11-06 2015-06-18 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP2016035559A (ja) 2014-08-04 2016-03-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
JP2016164683A (ja) 2014-12-26 2016-09-08 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP2016191877A (ja) 2015-03-31 2016-11-10 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクス、ハーフトーン位相シフトマスク及びハーフトーン位相シフトマスクブランクスの製造方法
JP2016191872A (ja) 2015-03-31 2016-11-10 信越化学工業株式会社 位相シフトマスクブランクス、位相シフトマスク及び位相シフトマスクブランクスの製造方法

Also Published As

Publication number Publication date
TWI854972B (zh) 2024-09-11
KR20200133377A (ko) 2020-11-27
JP2019174806A (ja) 2019-10-10
SG11202009172VA (en) 2020-10-29
CN111902772A (zh) 2020-11-06
WO2019188397A1 (ja) 2019-10-03
US20210026235A1 (en) 2021-01-28
TW201940961A (zh) 2019-10-16

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