JP7194116B2 - 酸化ケイ素の核形成／接着の向上により膜粗さを改善するための処理アプローチ - Google Patents

酸化ケイ素の核形成／接着の向上により膜粗さを改善するための処理アプローチ Download PDF

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JP7194116B2
JP7194116B2 JP2019554823A JP2019554823A JP7194116B2 JP 7194116 B2 JP7194116 B2 JP 7194116B2 JP 2019554823 A JP2019554823 A JP 2019554823A JP 2019554823 A JP2019554823 A JP 2019554823A JP 7194116 B2 JP7194116 B2 JP 7194116B2
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substrate
amorphous silicon
patterned features
sam
layer
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JP2020517098A (ja
JP2020517098A5 (enExample
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ルイ チェン，
アブヒジット バス マリック，
イーホン チェン，
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Applied Materials Inc
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Applied Materials Inc
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  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
JP2019554823A 2017-04-07 2018-03-21 酸化ケイ素の核形成／接着の向上により膜粗さを改善するための処理アプローチ Active JP7194116B2 (ja)

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US201762482872P 2017-04-07 2017-04-07
US62/482,872 2017-04-07
PCT/US2018/023474 WO2018187034A1 (en) 2017-04-07 2018-03-21 Treatment approach to improve film roughness by improving nucleation/adhesion of silicon oxide

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JP2020517098A JP2020517098A (ja) 2020-06-11
JP2020517098A5 JP2020517098A5 (enExample) 2021-05-06
JP7194116B2 true JP7194116B2 (ja) 2022-12-21

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KR102509390B1 (ko) * 2017-07-24 2023-03-14 어플라이드 머티어리얼스, 인코포레이티드 산화규소 상의 초박형 비정질 규소 막의 연속성을 개선하기 위한 전처리 접근법
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