JP7194006B2 - 基板載置方法、成膜方法、成膜装置、および有機ｅｌパネルの製造システム - Google Patents

基板載置方法、成膜方法、成膜装置、および有機ｅｌパネルの製造システム Download PDF

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JP7194006B2
JP7194006B2 JP2018236809A JP2018236809A JP7194006B2 JP 7194006 B2 JP7194006 B2 JP 7194006B2 JP 2018236809 A JP2018236809 A JP 2018236809A JP 2018236809 A JP2018236809 A JP 2018236809A JP 7194006 B2 JP7194006 B2 JP 7194006B2
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substrate
mask
supporting portion
film forming
posture
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JP2020098871A (ja
JP2020098871A5 (enExample
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友和 須志原
由也 戸江
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to JP2018236809A priority Critical patent/JP7194006B2/ja
Priority to KR1020190162414A priority patent/KR102671644B1/ko
Priority to CN201911305427.1A priority patent/CN111331622B/zh
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Publication of JP2020098871A5 publication Critical patent/JP2020098871A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00—Gripping heads and other end effectors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Robotics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2018236809A 2018-12-18 2018-12-18 基板載置方法、成膜方法、成膜装置、および有機ｅｌパネルの製造システム Active JP7194006B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018236809A JP7194006B2 (ja) 2018-12-18 2018-12-18 基板載置方法、成膜方法、成膜装置、および有機ｅｌパネルの製造システム
KR1020190162414A KR102671644B1 (ko) 2018-12-18 2019-12-09 기판 재치 방법, 성막 방법, 성막 장치, 및 유기 el 패널의 제조 시스템
CN201911305427.1A CN111331622B (zh) 2018-12-18 2019-12-18 基板载置方法、成膜方法、成膜装置以及有机el面板的制造系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018236809A JP7194006B2 (ja) 2018-12-18 2018-12-18 基板載置方法、成膜方法、成膜装置、および有機ｅｌパネルの製造システム

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JP2020098871A JP2020098871A (ja) 2020-06-25
JP2020098871A5 JP2020098871A5 (enExample) 2022-01-11
JP7194006B2 true JP7194006B2 (ja) 2022-12-21

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CN (1) CN111331622B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7660365B2 (ja) * 2020-11-25 2025-04-11 キヤノントッキ株式会社 アライメント装置、成膜装置、アライメント方法、成膜方法、および電子デバイスの製造方法
CN113059290B (zh) * 2021-02-19 2022-12-09 福建华佳彩有限公司 一种通过位移控制加工掩膜板的方法
KR102702270B1 (ko) * 2021-11-17 2024-09-04 주식회사 선익시스템 기판 정렬 장치, 기판 정렬 방법 및 박막 증착 시스템
JP7462696B2 (ja) * 2022-04-25 2024-04-05 キヤノントッキ株式会社 ワーク保持装置、アライメント装置及び成膜装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006172930A (ja) 2004-12-16 2006-06-29 Hitachi High-Tech Electronics Engineering Co Ltd 真空蒸着方法及びｅｌディスプレイ用パネル
WO2008082049A1 (en) 2006-12-28 2008-07-10 Doosan Mecatec Co., Ltd. Substrate alignment apparatus aligning substrate and mask and method for aligning substrate and mask
JP2018197363A (ja) 2017-05-22 2018-12-13 キヤノントッキ株式会社 基板載置方法、基板載置機構、成膜方法、成膜装置及び電子デバイスの製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02297011A (ja) * 1989-05-11 1990-12-07 Seiko Epson Corp アライメント方法
JPH10199784A (ja) * 1997-01-06 1998-07-31 Mitsubishi Electric Corp アライメント補正方法及び半導体装置
JP3641709B2 (ja) * 1999-12-09 2005-04-27 株式会社 日立インダストリイズ 基板の組立方法とその装置
JP3789857B2 (ja) * 2002-06-25 2006-06-28 トッキ株式会社 蒸着装置
JP3751972B2 (ja) * 2003-12-02 2006-03-08 有限会社ボンドテック 接合方法及びこの方法により作成されるデバイス並びに表面活性化装置及びこの装置を備えた接合装置
JP4534011B2 (ja) * 2004-06-25 2010-09-01 京セラ株式会社 マスクアライメント法を用いたディスプレイの製造方法
JP2007148310A (ja) * 2005-10-25 2007-06-14 Nsk Ltd マスク及びその加工方法
JP4773834B2 (ja) * 2006-02-03 2011-09-14 キヤノン株式会社 マスク成膜方法およびマスク成膜装置
US7835001B2 (en) * 2006-05-24 2010-11-16 Samsung Mobile Display Co., Ltd. Method of aligning a substrate, mask to be aligned with the same, and flat panel display apparatus using the same
JP2008007857A (ja) * 2006-06-02 2008-01-17 Sony Corp アライメント装置、アライメント方法および表示装置の製造方法
JP4865414B2 (ja) * 2006-06-22 2012-02-01 トッキ株式会社 アライメント方法
JP5469852B2 (ja) 2008-11-21 2014-04-16 株式会社ニコン 搬送装置、搬送方法、露光装置、露光方法、及びデバイス製造方法
JP5464991B2 (ja) * 2009-12-07 2014-04-09 Ｎｓｋテクノロジー株式会社 近接露光装置及び近接露光方法
JP2012009239A (ja) * 2010-06-24 2012-01-12 Sumitomo Bakelite Co Ltd 導電膜の製造方法及び導電膜
JP5298244B2 (ja) * 2010-10-19 2013-09-25 シャープ株式会社 蒸着装置
JP6035670B2 (ja) * 2012-08-07 2016-11-30 株式会社ニコン 露光方法、フラットパネルディスプレイの製造方法、及びデバイス製造方法、並びに露光装置
JP6100571B2 (ja) * 2013-03-22 2017-03-22 株式会社東芝 表示装置の製造装置、および表示装置の製造方法
JP6250999B2 (ja) * 2013-09-27 2017-12-20 キヤノントッキ株式会社 アライメント方法並びにアライメント装置
JP2015068733A (ja) * 2013-09-30 2015-04-13 株式会社日立ハイテクファインシステムズ ワーク測定装置及び方法並びにこれを用いた有機ｅｌ製造装置
KR20150092421A (ko) * 2014-02-04 2015-08-13 삼성디스플레이 주식회사 기판 정렬장치 및 기판 정렬방법
KR102520693B1 (ko) * 2016-03-03 2023-04-11 엘지디스플레이 주식회사 유기발광소자의 증착장치
JP6876520B2 (ja) * 2016-06-24 2021-05-26 キヤノントッキ株式会社 基板の挟持方法、基板の挟持装置、成膜方法、成膜装置、及び電子デバイスの製造方法、基板載置方法、アライメント方法、基板載置装置
JP6393802B1 (ja) 2017-05-22 2018-09-19 キヤノントッキ株式会社 基板載置装置、基板載置方法、成膜装置、成膜方法、アライメント装置、アライメント方法、および、電子デバイスの製造方法
JP6869111B2 (ja) * 2017-06-06 2021-05-12 東京エレクトロン株式会社 基板受け渡し方法及び基板処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006172930A (ja) 2004-12-16 2006-06-29 Hitachi High-Tech Electronics Engineering Co Ltd 真空蒸着方法及びｅｌディスプレイ用パネル
WO2008082049A1 (en) 2006-12-28 2008-07-10 Doosan Mecatec Co., Ltd. Substrate alignment apparatus aligning substrate and mask and method for aligning substrate and mask
JP2018197363A (ja) 2017-05-22 2018-12-13 キヤノントッキ株式会社 基板載置方法、基板載置機構、成膜方法、成膜装置及び電子デバイスの製造方法

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KR20200075747A (ko) 2020-06-26
JP2020098871A (ja) 2020-06-25
KR102671644B1 (ko) 2024-06-04
CN111331622A (zh) 2020-06-26
CN111331622B (zh) 2023-04-18

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