CN111331622B - 基板载置方法、成膜方法、成膜装置以及有机el面板的制造系统 - Google Patents

基板载置方法、成膜方法、成膜装置以及有机el面板的制造系统 Download PDF

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CN111331622B
CN111331622B CN201911305427.1A CN201911305427A CN111331622B CN 111331622 B CN111331622 B CN 111331622B CN 201911305427 A CN201911305427 A CN 201911305427A CN 111331622 B CN111331622 B CN 111331622B
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substrate
mask
posture
pressing
film forming
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CN111331622A (zh
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须志原友和
户江由也
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00—Gripping heads and other end effectors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Physical Vapour Deposition (AREA)
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CN201911305427.1A 2018-12-18 2019-12-18 基板载置方法、成膜方法、成膜装置以及有机el面板的制造系统 Active CN111331622B (zh)

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JP2018236809A JP7194006B2 (ja) 2018-12-18 2018-12-18 基板載置方法、成膜方法、成膜装置、および有機ｅｌパネルの製造システム
JP2018-236809 2018-12-18

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CN111331622B true CN111331622B (zh) 2023-04-18

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Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
JP7660365B2 (ja) * 2020-11-25 2025-04-11 キヤノントッキ株式会社 アライメント装置、成膜装置、アライメント方法、成膜方法、および電子デバイスの製造方法
CN113059290B (zh) * 2021-02-19 2022-12-09 福建华佳彩有限公司 一种通过位移控制加工掩膜板的方法
KR102702270B1 (ko) * 2021-11-17 2024-09-04 주식회사 선익시스템 기판 정렬 장치, 기판 정렬 방법 및 박막 증착 시스템
JP7462696B2 (ja) * 2022-04-25 2024-04-05 キヤノントッキ株式会社 ワーク保持装置、アライメント装置及び成膜装置

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JPH02297011A (ja) * 1989-05-11 1990-12-07 Seiko Epson Corp アライメント方法
JPH10199784A (ja) * 1997-01-06 1998-07-31 Mitsubishi Electric Corp アライメント補正方法及び半導体装置
TW571144B (en) * 1999-12-09 2004-01-11 Hitachi Techno Eng Substrate assembling apparatus
JP2004027291A (ja) * 2002-06-25 2004-01-29 Tokki Corp 蒸着装置
JP2005294800A (ja) * 2003-12-02 2005-10-20 Bondotekku:Kk 接合方法及びこの方法により作成されるデバイス並びに表面活性化装置及びこの装置を備えた接合装置
JP2006012597A (ja) * 2004-06-25 2006-01-12 Kyocera Corp マスクアライメント法を用いたディスプレイの製造方法
JP2007148310A (ja) * 2005-10-25 2007-06-14 Nsk Ltd マスク及びその加工方法
CN101013274A (zh) * 2006-02-03 2007-08-08 佳能株式会社 掩模成膜方法及掩模成膜设备
JP2008004358A (ja) * 2006-06-22 2008-01-10 Tokki Corp アライメント方法及びアライメント装置並びに有機ｅｌ素子形成装置
JP2008007857A (ja) * 2006-06-02 2008-01-17 Sony Corp アライメント装置、アライメント方法および表示装置の製造方法
JP2011119594A (ja) * 2009-12-07 2011-06-16 Nsk Ltd 近接露光装置及び近接露光方法
CN104062779A (zh) * 2013-03-22 2014-09-24 株式会社东芝 显示装置的制造装置以及显示装置的制造方法
JP2015068733A (ja) * 2013-09-30 2015-04-13 株式会社日立ハイテクファインシステムズ ワーク測定装置及び方法並びにこれを用いた有機ｅｌ製造装置
KR20150092421A (ko) * 2014-02-04 2015-08-13 삼성디스플레이 주식회사 기판 정렬장치 및 기판 정렬방법
CN105593396A (zh) * 2013-09-27 2016-05-18 佳能特机株式会社 对准方法以及对准装置
CN107015440A (zh) * 2012-08-07 2017-08-04 株式会社尼康 移动体装置、曝光装置、平板显示器的制造方法和器件制造方法
JP2018003151A (ja) * 2016-06-24 2018-01-11 キヤノントッキ株式会社 基板の挟持方法、基板の挟持装置、成膜方法、成膜装置、及び電子デバイスの製造方法、基板載置方法、アライメント方法、基板載置装置
JP2018197363A (ja) * 2017-05-22 2018-12-13 キヤノントッキ株式会社 基板載置方法、基板載置機構、成膜方法、成膜装置及び電子デバイスの製造方法
CN109003931A (zh) * 2017-06-06 2018-12-14 东京毅力科创株式会社 基板交接方法以及基板处理装置

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JP5469852B2 (ja) 2008-11-21 2014-04-16 株式会社ニコン 搬送装置、搬送方法、露光装置、露光方法、及びデバイス製造方法
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JP5298244B2 (ja) * 2010-10-19 2013-09-25 シャープ株式会社 蒸着装置
KR102520693B1 (ko) * 2016-03-03 2023-04-11 엘지디스플레이 주식회사 유기발광소자의 증착장치
JP6393802B1 (ja) 2017-05-22 2018-09-19 キヤノントッキ株式会社 基板載置装置、基板載置方法、成膜装置、成膜方法、アライメント装置、アライメント方法、および、電子デバイスの製造方法

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02297011A (ja) * 1989-05-11 1990-12-07 Seiko Epson Corp アライメント方法
JPH10199784A (ja) * 1997-01-06 1998-07-31 Mitsubishi Electric Corp アライメント補正方法及び半導体装置
TW571144B (en) * 1999-12-09 2004-01-11 Hitachi Techno Eng Substrate assembling apparatus
JP2004027291A (ja) * 2002-06-25 2004-01-29 Tokki Corp 蒸着装置
JP2005294800A (ja) * 2003-12-02 2005-10-20 Bondotekku:Kk 接合方法及びこの方法により作成されるデバイス並びに表面活性化装置及びこの装置を備えた接合装置
JP2006012597A (ja) * 2004-06-25 2006-01-12 Kyocera Corp マスクアライメント法を用いたディスプレイの製造方法
JP2007148310A (ja) * 2005-10-25 2007-06-14 Nsk Ltd マスク及びその加工方法
CN101013274A (zh) * 2006-02-03 2007-08-08 佳能株式会社 掩模成膜方法及掩模成膜设备
JP2008007857A (ja) * 2006-06-02 2008-01-17 Sony Corp アライメント装置、アライメント方法および表示装置の製造方法
JP2008004358A (ja) * 2006-06-22 2008-01-10 Tokki Corp アライメント方法及びアライメント装置並びに有機ｅｌ素子形成装置
JP2011119594A (ja) * 2009-12-07 2011-06-16 Nsk Ltd 近接露光装置及び近接露光方法
CN107015440A (zh) * 2012-08-07 2017-08-04 株式会社尼康 移动体装置、曝光装置、平板显示器的制造方法和器件制造方法
CN104062779A (zh) * 2013-03-22 2014-09-24 株式会社东芝 显示装置的制造装置以及显示装置的制造方法
CN105593396A (zh) * 2013-09-27 2016-05-18 佳能特机株式会社 对准方法以及对准装置
JP2015068733A (ja) * 2013-09-30 2015-04-13 株式会社日立ハイテクファインシステムズ ワーク測定装置及び方法並びにこれを用いた有機ｅｌ製造装置
KR20150092421A (ko) * 2014-02-04 2015-08-13 삼성디스플레이 주식회사 기판 정렬장치 및 기판 정렬방법
JP2018003151A (ja) * 2016-06-24 2018-01-11 キヤノントッキ株式会社 基板の挟持方法、基板の挟持装置、成膜方法、成膜装置、及び電子デバイスの製造方法、基板載置方法、アライメント方法、基板載置装置
JP2018197363A (ja) * 2017-05-22 2018-12-13 キヤノントッキ株式会社 基板載置方法、基板載置機構、成膜方法、成膜装置及び電子デバイスの製造方法
CN109003931A (zh) * 2017-06-06 2018-12-14 东京毅力科创株式会社 基板交接方法以及基板处理装置

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JP2020098871A (ja) 2020-06-25
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CN111331622A (zh) 2020-06-26
JP7194006B2 (ja) 2022-12-21

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