KR102671644B1 - 기판 재치 방법, 성막 방법, 성막 장치, 및 유기 el 패널의 제조 시스템 - Google Patents

기판 재치 방법, 성막 방법, 성막 장치, 및 유기 el 패널의 제조 시스템 Download PDF

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KR102671644B1
KR102671644B1 KR1020190162414A KR20190162414A KR102671644B1 KR 102671644 B1 KR102671644 B1 KR 102671644B1 KR 1020190162414 A KR1020190162414 A KR 1020190162414A KR 20190162414 A KR20190162414 A KR 20190162414A KR 102671644 B1 KR102671644 B1 KR 102671644B1
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substrate
mask
support portion
substrate support
posture
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KR20200075747A (ko
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토모카즈 스시하라
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캐논 톡키 가부시키가이샤
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00—Gripping heads and other end effectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Robotics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020190162414A 2018-12-18 2019-12-09 기판 재치 방법, 성막 방법, 성막 장치, 및 유기 el 패널의 제조 시스템 Active KR102671644B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018236809A JP7194006B2 (ja) 2018-12-18 2018-12-18 基板載置方法、成膜方法、成膜装置、および有機ｅｌパネルの製造システム
JPJP-P-2018-236809 2018-12-18

Publications (2)

Publication Number Publication Date
KR20200075747A KR20200075747A (ko) 2020-06-26
KR102671644B1 true KR102671644B1 (ko) 2024-06-04

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Country Status (3)

Country Link
JP (1) JP7194006B2 (enExample)
KR (1) KR102671644B1 (enExample)
CN (1) CN111331622B (enExample)

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JP7660365B2 (ja) * 2020-11-25 2025-04-11 キヤノントッキ株式会社 アライメント装置、成膜装置、アライメント方法、成膜方法、および電子デバイスの製造方法
CN113059290B (zh) * 2021-02-19 2022-12-09 福建华佳彩有限公司 一种通过位移控制加工掩膜板的方法
KR102702270B1 (ko) * 2021-11-17 2024-09-04 주식회사 선익시스템 기판 정렬 장치, 기판 정렬 방법 및 박막 증착 시스템
JP7462696B2 (ja) * 2022-04-25 2024-04-05 キヤノントッキ株式会社 ワーク保持装置、アライメント装置及び成膜装置

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JP2010123888A (ja) 2008-11-21 2010-06-03 Nikon Corp 搬送装置、搬送方法、露光装置、及びデバイス製造方法
KR101893708B1 (ko) 2017-05-22 2018-08-30 캐논 톡키 가부시키가이샤 기판 재치 장치, 기판 재치 방법, 성막 장치, 성막 방법, 얼라인먼트 장치, 얼라인먼트 방법, 및 전자 디바이스의 제조 방법

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JPH10199784A (ja) * 1997-01-06 1998-07-31 Mitsubishi Electric Corp アライメント補正方法及び半導体装置
JP3641709B2 (ja) * 1999-12-09 2005-04-27 株式会社 日立インダストリイズ 基板の組立方法とその装置
JP3789857B2 (ja) * 2002-06-25 2006-06-28 トッキ株式会社 蒸着装置
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JP2007148310A (ja) * 2005-10-25 2007-06-14 Nsk Ltd マスク及びその加工方法
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JP2008007857A (ja) * 2006-06-02 2008-01-17 Sony Corp アライメント装置、アライメント方法および表示装置の製造方法
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Publication number Priority date Publication date Assignee Title
JP2010123888A (ja) 2008-11-21 2010-06-03 Nikon Corp 搬送装置、搬送方法、露光装置、及びデバイス製造方法
KR101893708B1 (ko) 2017-05-22 2018-08-30 캐논 톡키 가부시키가이샤 기판 재치 장치, 기판 재치 방법, 성막 장치, 성막 방법, 얼라인먼트 장치, 얼라인먼트 방법, 및 전자 디바이스의 제조 방법

Also Published As

Publication number Publication date
CN111331622A (zh) 2020-06-26
CN111331622B (zh) 2023-04-18
KR20200075747A (ko) 2020-06-26
JP2020098871A (ja) 2020-06-25
JP7194006B2 (ja) 2022-12-21

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