JP7191669B2 - 液体吐出ヘッド用基板およびその製造方法 - Google Patents
液体吐出ヘッド用基板およびその製造方法 Download PDFInfo
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- JP7191669B2 JP7191669B2 JP2018235022A JP2018235022A JP7191669B2 JP 7191669 B2 JP7191669 B2 JP 7191669B2 JP 2018235022 A JP2018235022 A JP 2018235022A JP 2018235022 A JP2018235022 A JP 2018235022A JP 7191669 B2 JP7191669 B2 JP 7191669B2
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- 239000007788 liquid Substances 0.000 title claims description 103
- 239000000758 substrate Substances 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 74
- 239000010703 silicon Substances 0.000 claims description 74
- 229910052751 metal Inorganic materials 0.000 claims description 73
- 239000002184 metal Substances 0.000 claims description 73
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 72
- 229910052799 carbon Inorganic materials 0.000 claims description 72
- 230000004888 barrier function Effects 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 23
- 230000001681 protective effect Effects 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 description 26
- 239000003513 alkali Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- 238000000206 photolithography Methods 0.000 description 13
- 238000000059 patterning Methods 0.000 description 9
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LRTTZMZPZHBOPO-UHFFFAOYSA-N [B].[B].[Hf] Chemical compound [B].[B].[Hf] LRTTZMZPZHBOPO-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Description
図1は、本発明のインクジェット記録ヘッド用基板の斜視図である。図1では、液体吐出口006を上向きに示している。なお、特に説明のない限り、本明細書における「上」とは、液体吐出口006の側を称する。インクジェット記録ヘッド用基板は、液体吐出エネルギーを発生する液体吐出素子003(本実施形態では電気熱変換素子(ヒータ))を備えた基板001と、液体吐出口006が形成されたオリフィスプレート005とを有している。このインクジェット記録ヘッドにおいては、基板001に形成された液体供給口007から流路004にインクが供給される。そして、液体吐出素子003から発生したエネルギーによってインクが液体吐出口006から吐出され、記録媒体にインクが着弾して印字が行われる。インクジェット記録ヘッド用基板には、液体吐出素子003を駆動するために、液体吐出素子003に電気的に接続された電極パッド002が設けられており、該電極パッドにリード配線を実装することによって、インクジェット記録ヘッドが得られる。
以下、図2を参照して、本実施形態に係る液体吐出ヘッド用基板およびその製造方法を説明する。なお、図2は、模式的な断面図であり、電極パッドと液体吐出素子との位置関係および方向を限定するものではない。図3~図5についても同様である。
以下、図3を参照して、本実施形態に係る液体吐出ヘッド用基板およびその製造方法を説明する。なお、基板や、絶縁膜層、ヒータ層、配線層等の液体吐出ヘッド用基板を構成する層に用いる材料について、特に記載のない場合には、第1の実施形態において例示したものと同じ材料を用いることができる。
以下、図4を参照して、本実施形態に係る液体吐出ヘッド用基板およびその製造方法を説明する。なお、基板や、絶縁膜層、ヒータ層、配線層等の液体吐出ヘッド用基板を構成する層に用いる材料について、特に記載のない場合には、第1の実施形態において例示したものと同じ材料を用いることができる。
以下、図5を参照して、本実施形態に係る液体吐出ヘッド用基板およびその製造方法を説明する。なお、基板や、絶縁膜層、ヒータ層、配線層等の液体吐出ヘッド用基板を構成する層に用いる材料について、特に記載のない場合には、第1の実施形態において例示したものと同じ材料を用いることができる。
002 電極パッド
003 液体吐出素子
004 流路
005 オリフィスプレート(吐出口形成部材)
006 液体吐出口
007 液体供給口
10 絶縁膜層
12 ヒータ層
13 配線層
14 バリアメタル(拡散防止)層
15 ボンディング層
20 カーボンを含むシリコン系膜層(高温SiCN膜)
21 カーボンを含むシリコン系膜層(低温SiCN膜)
22 ヒータ保護膜層
23 カーボンを含むシリコン系膜層(高温SiC膜)
24 カーボンを含むシリコン系膜層(低温SiC膜)
33 ヒータ配線層
Claims (5)
- 基板と、該基板上の液体吐出エネルギーを発生する液体吐出素子と、バリアメタル層および該バリアメタル層上のボンディング層を備え、前記液体吐出素子に電気的に接続された電極パッドと、を有する液体吐出ヘッド用基板の製造方法であって、
前記液体吐出素子に電力を供給する第1の配線層を形成する工程と、
前記第1の配線層に接するように、前記第1の配線層上に前記バリアメタル層を形成する工程と、
前記バリアメタル層の端部側面を、カーボンを含むシリコン系膜により被覆する工程と、を有し、
前記被覆する工程を、前記バリアメタル層の形成後に、前記カーボンを含むシリコン系膜により少なくとも前記バリアメタル層を被覆するように行い、
前記被覆したカーボンを含むシリコン系膜の一部を除去して、前記バリアメタル層の上面の一部を露出させる工程と、
前記露出したバリアメタル層の上面に、前記バリアメタル層上の前記カーボンを含むシリコン系膜上に延在して前記ボンディング層を形成する工程と、
をさらに有することを特徴とする、液体吐出ヘッド用基板の製造方法。 - 前記液体吐出素子は電気熱変換素子であり、
前記被覆する工程では、前記カーボンを含むシリコン系膜の一部により前記電気熱変換素子を被覆する保護膜を形成する、請求項1に記載の液体吐出ヘッド用基板の製造方法。 - 前記被覆する工程では、前記カーボンを含むシリコン系膜を250℃以上で成膜する、請求項1に記載の液体吐出ヘッド用基板の製造方法。
- 前記被覆する工程では、前記カーボンを含むシリコン系膜を、前記液体吐出素子の駆動によるカーボンを含むシリコン系膜表面の到達温度以上で成膜する、請求項2に記載の液体吐出ヘッド用基板の製造方法。
- 前記被覆する工程では、前記カーボンを含むシリコン系膜を300℃以上で成膜する、請求項2に記載の液体吐出ヘッド用基板の製造方法。
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